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시장보고서
Comparison of 3-bit per cell NAND Flash Memories
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Abstract
This report compares the 3-bit per cell NAND flash memory architectures and
key parameters of SanDisk/Toshiba, Hynix and Samsung and analyzes the
advantages and disadvantages of each implementation.
About the Author
Luca Crippa is Senior Technical Analyst for Design Architecture. Luca
has more than 10 years of experience in MLC flash memory design.
Previously, he was Senior Designer for 48nm floating gate and 36nm floating
gate NAND flash memories at Qimonda AG as well as 90nm and 60nm MLC NAND flash
products at STMicroelectronics.
He was instrumental in the development of 64Mb, 128Mb and 256Mb MLC NOR flash
products at STMicroelectronics and is the author/co-author of 20 U.S. patents
and the book Memories in Wireless Systems (Springer-Verlag ed., 2008).
Luca received his Bachelors degree at ITIS G. Marconi, Dalmine, Italy in 1992
and a Masters degree in Electronic Engineering at the Politecnico of Milan in
1999. His thesis topic was Analog circuits design for Multilevel Flash Memory.
Table of Contents
- Contents
- List of Figure
- List of Tables
- Executive Summary
- Introduction
- Three-bit per cell NAND Flash Memories
- SanDisk/Toshiba 56nm 16Gb 3-bit/cell NAND Flash Memory
- Summary
- Page Buffer
- Page Organization
- Cache algorithms
- Source Line Bias Error Compensation
- Power Routing Organization
- Data Path
- All Bitline vs. Interleaved Architecture
- Program Speed
- ABL - Considerations on Scalability
- Hynix 48nm 32Gb 3-bit/cell NAND Flash Memory
- Summary
- Chip Architecture
- Pass Bit Detector Circuits
- Smart Blind Program Algorithm
- Start Bias Controlled Program Algorithm
- 32Gb 32nm 3-bit/cell SanDisk/Toshiba
- Summary
- Chip Architecture
- Program Verify Read Before Programming
- Compact Row Decoder
- Extended Column Architecture
- Samsung 51nm 16Gb 3-bit/cell NAND Flash Memory
- Summary
- References
- About the Author
- About Forward Insights
- Report Offerings
List of Figures
- Figure 1. NAND Flash Areal Storage Density Trend
- Figure 2. ISPP for 2-bit and 3-bit per cell Technology
- Figure 3. ABL architecture
- Figure 4. Page Organization and Programming
- Figure 5. Conventional Cache Program
- Figure 6. FSC +MCR
- Figure 7. Source line Bias Error: Ideal Case
- Figure 8. Source line Bias Error: Real Case
- Figure 9. Source line Bias Error: Source Tracking
- Figure 10. Chip comparison
- Figure 11. Power Bus Routing: 16Gb D2 vs. 16Gb x3 (rotated array)
- Figure 12. Data Path: 16Gb D2 vs 16Gb x3 (rotated array)
- Figure 13. Program speed improvements
- Figure 14. ABL Architecture with 8K Page Size Compared to Interleaved
Architecture with 4KB Page Size
- Figure 15. ABL Architecture with 8K Page Size Compared to Interleaved
Architecture with 8KB Page Size
- Figure 16. ABL Architecture vs. Interleaved Architecture: Double Sided
Page Buffer
- Figure 17. BLC Line Density vs. Core Scalability
- Figure 18. 3-bit/cell NAND Flash Program Time
- Figure 19. Die micrograph of Hynix 32Gb 8LC NAND Flash Memory
- Figure 20. Pass Bit Detector
- Figure 21. Smart Blind Program
- Figure 22. Start Bias Controlled Program
- Figure 23. SanDisk/Toshiba 32nm 32Gb 3-bit/cell NAND Flash Die Micrograph
- Figure 24. Program Inhibit
- Figure 25. Schematic view of row decoder
- Figure 26. String Organization
- Figure 27. Endurance properties
- Figure 28. Current Degradation due to Series Resistance
List of Tables
- Table 1. Features Summary of SanDisk/Toshiba 56nm 16Gb 3-bit/cell NAND
Flash Memory
- Table 2. ABL vs. Interleaving
- Table 3. Features Summary of Hynix 48nm 32Gb 3-bit/cell NAND Flash Memory
- Table 4. Features Summary of SanDisk/Toshiba 32nm 32Gb 3-bit/cell NAND
Flash Memory
- Table 3. Features Summary of Samsung 51nm 16Gb 3-bit/cell NAND Flash Memory
- Table 5. Key Parameters Comparison
- Table 7. Key Features and Advantages & Disadvantages of SanDisk/Toshiba
56nm 16Gb 3- bit/cell NAND Flash Memory
- Table 8. Key Features and Advantages & Disadvantages of Hynix 48nm 32Gb
3-bit/cell NAND Flash Memory
- Table 9. Key Features and Advantages & Disadvantages of SanDisk/Toshiba
32nm 32Gb 3-bit/cell NAND Flash Memory
- Table 10. Key Features and Advantages & Disadvantages of Samsung 51nm 16Gb
3-bit/cell NAND Flash Memory
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