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Cree CGH40010 GaN HEMT Teardown Report-short version

리서치사 MuAnalysis
발행일 2009년 10월 상품코드 102132
페이지 정보
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US $ 3,000 ￦ 3,579,900 PDF by E-mail (Single User License)
US $ 3,500 ￦ 4,176,500 PDF by E-mail (Multi-User, Single Site License)
US $ 4,500 ￦ 5,369,800 PDF by E-mail (Multi-User, Multi Site License)


영문목차

Abstract

Much has been published about GaN transistors but very few are available commercially. MuAnalysis has taken apart the Cree CGH40010 GaN HEMT.

MuAnalysis has used a large variety of analytical techniques including, electron microscopy with photochemical delineation, EDX and FTIR spectroscopy, and emission microscopy to probe the insides of this transistors and reveal what the datasheet does not mention.

Table of Contents

  • 1. Product Identification
  • 2. External Appearance and Principal Dimensions
  • 3. Package
    • Encapsulation
    • Leadframe structure and material
    • Die attach
    • Wirebonding
  • 4. Semiconductor Die
    • 4.1 Plan view analysis
      • Dimensions
      • Structure
    • 4.2 Cross section analysis
      • 4.2.1 Source Probe Pads
      • 4.2.2 Gate Contact
      • 4.2.3 Active Area
      • 4.2.4 Source Through Vias
      • 4.2.5 Coupled gate and drain contact pads
  • 5. Emission Microscopy Analysis
  • 6. Summary
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