GaAs IC시장분석과 예측

※ 본 상품은 영문 자료로 한글과 영문목차에 불일치하는 내용이 있을 경우 영문을 우선합니다. 정확한 검토를 위해 영문목차를 참고해주시기 바랍니다.

통신과 집적 회로, 컴퓨터 공업 분야의 시장 조사에서 세계적으로 높이 평가 받고 있는 ,The Information Network (본사:펜실베니아주)에서는 GaAs IC 시장에 관하여 조사 분석한 보고서 “The GaAs IC Market” 을 발행하였습니다.

본 보고서는 GaAs IC 기술의 과제, 용도 시장, IC 공급자와 최종 소비자가 직면한 과제와 시장에 관한 예측과 주요 제조업체의 프로파일 등을 대략 아래와 같은 구성으로 전해 드립니다.

제1장 서론

제2장 개요
• 주요 과제에 관한 요약
• 시장 예측에 관한 요약

제3장 기술 과제
• GaAs 디바이스
  • FET
  • HEMT
  • HBT
• 로직 구조의 비교
  • 버퍼 FET 로직
  • FET 로직
  • 용량 확장형 로직
  • DCFL
  • SCFL
• 재료에 관한 과제
  • 웨이퍼 생산
  • 에칭 피트 밀도
• 기기
  • Implanter
  • 리소그라피
  • 에칭
  • 증착
  • RTP（급속 열 처리 장치）
• 실장
  • 실장의 종류
  • 결합
• 테스트
• 설계

제4장 GaAs IC의 용도
• 개요
• 시장
  • 통신 시스템
  • 무선 통신
  • 텔레비전 시스템
  • 컴퓨팅
  • 데이터 통신
  • 자동 테스트 장치

제5장 IC 공급자와 최종 소비자의 과제
• 개요
• 반도체와의 경쟁
• 일본제 제품과의 경쟁
• 웨이퍼 사이즈
• SiGe와의 경쟁

제6장 시장 예측（1999 ～ 2004년）
• 시장 영향 요인
• 시장 예측의 전제 조건
• GaAs IC 시장의 예측
• SiGe IC 시장의 예측
• 용도 시장

제7장 GaAs IC 제조업체의 프로파일

List of Tables

• 5.1 Cost Comparison for GaAs Structures
• 5.2 A Comparison of SiGe BiCMOS, RF CMOS, and InGaP/GaAs
• 6.1 Worldwide Merchant GaAs IC Market Forecast By Device Type
• 6.2 Worldwide Merchant Market Forecast By Geographical Region
• 6.3 Worldwide Merchant Market Forecast By Application
• 6.4 Market Shares of Merchant Participants - 2013

List of Figures

• 3.1 Schematic of GaAs MESFET
• 3.2 Schematic of GaAs HEMT Device
• 3.3 Schematic of GaAs HBT Device
• 3.4 Schematic of GaAs HBT Device
• 3.5 Symbolic Representations of Various GaAs Transistor Type
• 3.6 Schematic of BFL Logic Gate
• 3.7 Schematic of FETL Logic Gate
• 3.8 Schematic of CEL Logic Gate
• 3.9 Schematic of DCFL Logic Gate
• 3.10 Schematic of SCFL Logic Gate
• 3.11 Full wafer EPD mapping of LEC and VGF wafers
• 3.12 Mesoscopic EL2 mapping of LEC and VGF wafers
• 3.13 pHEMT MMIC Process Flow Chart
• 3.14 0.15 Micron 3MI Process Cross Section
• 3.15 InGaP HBT Process
• 5.1 Comparison of Die Costs of Si and GaAs
• 5.2 Strained Silicon Germanium Technology
• 5.3 Fourth Generation Of Strain Technology
• 5.4 Performance Versus Germanium Content
• 5.5 Bulk Versus SOI Strain Method
• 6.1 Worldwide Merchant GaAs IC Market Forecast
• 6.2 Worldwide GaAs Merchant Market Forecast By Geographical Region
• 6.3 Worldwide GaAs Merchant Market Forecast By Application
• 6.4 Global Handset Market
• 6.5 Migration Of PA's In Handset Market
• 6.6 CMOS Replacement Of Bipolar And GaAs
• 6.7 Worldwide SiGe Market Forecast

The biggest enabler of the mobile data increase and the most important driver of the GaAs RF IC market is the handset segment. Much of the content of a handset is silicon-based, but power amplifiers (PAs) and switches in the front-end of the phone use GaAs devices. This report investigates the technology trends, applications, and market developments of GaAs ICs. U.S., Japanese, and European applications such as telecom, computers, defense, consumers, are reviewed. This report will provide the reader with an in-depth understanding of the technological and market factors determining the evolution of GaAs ICs.

Every cell phone contains Power Amplifiers (PA), which enables the handset to transmit voice and data back to the base station tower to route a call to another phone number or Internet address. PAs, the most critical radio frequency component in the phone are currently dominated by circuits made with Gallium Arsenide (GaAs).

Table of Contents

Chapter 1 Introduction

Chapter 2 Executive Summary

• 2.1 Summary of Major Issues
• 2.2 Summary of Market Forecast

Chapter 3 Technology Issues

• 3.1 GaAs Devices
  • 3.1.1 FETs
  • 3.1.2 HEMTs
  • 3.1.3 HBT
• 3.2 Comparison of Logic Structures
  • 3.2.1 Buffered FET Logic
  • 3.2.2 FET Logic
  • 3.2.3 Capacitively Enhanced Logic
  • 3.2.4 Direct-Coupled FET Logic
  • 3.2.5 Source-Coupled FET Logic
• 3.3 Material Issues
  • 3.3.1 Wafer Production
  • 3.3.2 Etch Pit Densities
• 3.4 Equipment
  • 3.4.1 Implanters
  • 3.4.2 Lithography
  • 3.4.3 Etching
  • 3.4.4 Deposition
  • 3.4.5 Rapid Thermal Processing
• 3.5 Packaging
  • 3.5.1 Package Types
  • 3.5.2 Bonding
• 3.6 Testing
• 3.7 Design

Chapter 4 Applications for GaAs ICs

• 4.1 Introduction
  • 4.1.1 The Trend Toward Higher Frequencies
  • 4.1.2 Transition from Analog to Digital Modulation
  • 4.1.3 Discrete Components and Silicon-Based ICs
• 4.2 Markets
  • 4.2.1 Telecommunications Systems
  • 4.2.2 Television Systems
  • 4.2.3 Computing
  • 4.2.4 Data Communications
  • 4.2.5 Automotive
  • 4.2.6 Automated Test Equipment
  • 4.2.7 Military

Chapter 5 IC Supplier and End-User Issues

• 5.1 Introduction
• 5.2 Competing Against Silicon
• 5.3 Competing Against The Japanese
• 5.4 Taiwan's Market Momentum
• 5.5 Korea's Market Momentum
• 5.6 Wafer Sizes
• 5.7 Competing Against SiGe
  • 5.7.1 Introduction
  • 5.7.2 Technology
    • 5.7.2.1 Strained Silicon
    • 5.7.2.2 Device Manufacturing
  • 5.7.3 Applications
    • 5.7.3.1 Wireless LAN
    • 5.7.3.2 WiMAX
    • 5.7.3.3 Bluetooth
    • 5.7.3.4 Cellular
    • 5.7.3.5 GPS

Chapter 6 Market Forecast

• 6.1 Driving Forces
• 6.2 Market Forecast Assumptions
• 6.3 GaAs IC Market Forecast
• 6.4 SiGe IC Market Forecast
• 6.5 End Application Market

Chapter 7 Profile of GaAs IC Manufacturers