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박막 증착 기술의 동향, 과제와 시장 분석

Thin Film Deposition: Trends, Key Issues, Market Analysis

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발행일 2021년 03월 상품 코드 5774
페이지 정보 영문 160 PAGES
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박막 증착 기술의 동향, 과제와 시장 분석 Thin Film Deposition: Trends, Key Issues, Market Analysis
발행일 : 2021년 03월 페이지 정보 : 영문 160 PAGES

본 상품은 영문 자료로 한글과 영문목차에 불일치하는 내용이 있을 경우 영문을 우선합니다. 정확한 검토를 위해 영문목차를 참고해주시기 바랍니다.

통신과 집적 회로, 컴퓨터 공업 분야의 시장 조사에서 세계적으로 높이 평가 받고 있는 The Information Network (본사:펜실베니아주)에서는 박막 증착 기술에 관하여 조사 분석하고 정리한 보고서 “Thin Film Deposition: Trends, Key Issues, Market Analysis” 을 발행하였습니다.

본 보고서는 PVD, CVD, ECD 의 박막 증착 기술의 개요, 특성, 벤더가 직면한 과제와 향후 시장 예측 등을 대략 아래와 같은 구성으로 전해 드립니다.

    제1장 서론
    제2장 개요
    제3장 PVD(물리 증착)
    • 개요
    • 스퍼터링 기술
    • 플라즈마 기술
    • 반응 장치의 설계
    • 반도체 프로세싱
    • 표적
    제4장 CVD(화학 증착)
    • 개요
    • CVD 기술
      • APCVD
      • LPCVD
      • PECVD
      • HDPCVD
      • ALD
    제5장 ECD(전해 도금)
    • 개요
    • 반응 장치의 설계
    • 과제
    • 첨가제
    • 처리
      • 슈퍼필링
      • 고단면비
    • 동 캐소드
    제6장 박막 증착과 박막의 특성
    • 개요
    • 유전체 증착
      • 산화 규소
      • 질화 규소
      • 고유전체 층간 절연막
      • 저유전체 층간 절연막
    • 금속 증착
      • 알루미늄
      • 텅스텐/규화 텅스텐
      • 질화 티탄
    제7장 벤더 과제
    • 개요
    • 300mm 프로세싱
    • 통합 프로세싱
    • 계측
    • ESD
    • 파라미터 테스트
    제8장 시장 예측
    • 개요
    • 주요 과제
    • 시장 예측에 관한 가정
    • 시장 예측
      • CVD
      • PVD
      • 동 도금 시장
      • 원자층 증착 시장

FIGURES

  • 3.1. Schematic Of Sputtering System
  • 3.2. Magnetron Sputtering Design
  • 3.3. Showerhead Reactor Design
  • 3.4. Ionized PVD
  • 4.1. APCVD Reactor
  • 4.2. Tube CVD Reactor
  • 4.3. HDPCVD Reactor
  • 4.4. ALD Versus PVD Copper Barrier
  • 5.1. Copper Electroplating System
  • 7.1. Comparison Between Semiconductor and Equipment Revenues
  • 8.1. Worldwide MCVD Market Shares
  • 8.2. Worldwide DCVD Market Shares
  • 8.3. Worldwide DCVD Market By Sectors
  • 8.4. Worldwide HDHCVD Market Shares
  • 8.5. Worldwide PECVD Market Shares
  • 8.6. Worldwide SACVD Market Shares
  • 8.7. Worldwide LPCVD Market Shares
  • 8.8. Worldwide PVD Market Shares
  • 8.9. Worldwide ECD Market Shares
  • 8.10. Worldwide ALD Market Shares

TABLES

  • 8.1. Cu Replacements And Native Device
  • 8.2. Worldwide CVD Market Forecast
  • 8.3. Worldwide MCVD Market Shares
  • 8.4. Worldwide DCVD Market Shares
  • 8.5. Worldwide HDPCVD Market Forecast
  • 8.6. Worldwide HDPCVD Market Shares
  • 8.7. Worldwide PECVD Market Forecast
  • 8.8. Worldwide PECVD Market Shares
  • 8.9. Worldwide SACVD Market Forecast
  • 8.10. Worldwide SACVD Market Shares
  • 8.11. Worldwide LPCVD Market Forecast
  • 8.12. Worldwide LPCVD Market Shares
  • 8.13. Worldwide PVD Market Forecast
  • 8.14. Worldwide PVD Market Shares
  • 8.15. Worldwide ECD Market Forecast
  • 8.16. Worldwide ALD Market Forecast
  • 8.16. ALD Applications

CVD (Chemical Vapor Deposition) is used to deposit materials in various forms, including monocrystalline, polycrystalline, amorphous, and epitaxial. By subtypes, there are mainly LPCVD (low pressure), PECVD (plasma enhanced), and ALD. PVD deposition techniques include sputtering and eBeam and thermal evaporation.

The CVD process involves mixing the source material with one or more volatile precursors using a plasma to chemically interact and breakdown the source material. The processes use heat with higher pressures leading to a more reproducible film where the film thicknesses could be managed by time/power. These films are more stoichiometric, they are denser and are capable of growing higher quality insulator films. The PVD processing uses a solid precursor metal that is gasified through some electrical energy. The gasified atoms are then transferred to the substrate. These processes manages thicknesses using a quartz crystal rate monitor to control rate and thickness of the film.

ALD films are very conformal approaching 2000:1 aspect ratios, thus providing excellent step coverage over features. The process is repeatable and can grow thinner layers under 10nm thickness predictably. Films include Alumina oxide (AL2O3), Hafnium oxide (HfO2) and Titanium oxide (TiO2). Its use in the semiconductor industry has advanced ALD rapidly in recent years to develop thin, high-K gate dielectric layers.

The PECVD process offers good step coverage over features. Films include Silicon Dioxide (SiO2), Silicon Nitride (Si3N4) and lower stress Oxynitride (SiON) films. The PECVD films offer more flexibility than ALD with higher deposition rates leading to higher throughputs.

This report discusses the technology trends, products, applications, and suppliers of deposition materials and equipment. It also gives insights to suppliers for future user needs and should assist them in long range planning, new product development and product improvement. Market shares and a market forecast for each sector of thin film deposition tools is presented.

Table of Contents

Chapter 1. Introduction

Chapter 2. Executive Summary

Chapter 3. Physical Vapor Deposition

  • 3.1. Introduction
  • 3.2. Sputtering Technology
  • 3.3. Plasma Technology
  • 3.4. Reactor Designs
    • 3.4.1. Long-Throw Deposition
    • 3.4.2. Collimated Sputter Deposition
    • 3.4.3. Showerhead Deposition
    • 3.4.4. Ionized PVD
  • 3.5. Semiconductor Processing
  • 3.6. Targets

Chapter 4. Chemical Vapor Deposition

  • 4.1. Introduction
  • 4.2. Chemical Vapor Deposition (CVD) Techniques
    • 4.2.1. APCVD
    • 4.2.2. LPCVD
    • 4.2.3. PECVD
    • 4.2.4. HDPCVD
    • 4.2.5. ALD

Chapter 5. Electrochemical Deposition

  • 5.1. Introduction
  • 5.2. Reactor Design
  • 5.3. Challenges
  • 5.4. Additives
  • 5.5. Processing
    • 5.5.1. Superfilling
    • 5.5.2. Aspect Ratios
  • 5.6. Copper Cathodes
  • 5.7. Wet Copper Seed-Layer

Chapter 6. Film Deposition And Film Properties

  • 6.1. Introduction
  • 6.2. Dielectric Deposition
    • 6.2.1. Silicon Dioxide
      • 6.2.1.1. Thermal CVD
      • 6.2.1.2. PECVD
      • 6.2.1.3. HDPCVD
    • 6.2.2. Silicon Nitride
      • 6.2.2.1. Thermal CVD
      • 6.2.2.2. PECVD
      • 6.2.2.3. HDPCVD
    • 6.2.3. High-K Dielectrics
    • 6.2.4. Low-K Dielectrics
  • 6.3. Metal Deposition
    • 6.3.1. Aluminum
    • 6.3.2. Tungsten/Tungsten Silicide
    • 6.3.3. Titanium Nitride

Chapter 7. Vendor Issues

  • 7.1. Introduction
  • 7.2. 450mm Processing
  • 7.3. Integrated Processing
  • 7.4. Copper
  • 7.5. Metrology
  • 7.6. ESD
  • 7.7. Parametric Test

Chapter 8. Market Forecast

  • 8.1. Introduction
  • 8.2. Key Issues
    • 8.2.1. Interconnect Architectures
      • 8.2.1.1. Logic (MPU/ASIC)
      • 8.2.1.2. Memory (Flash)
    • 8.2.2. Processing Trends
      • 8.2.2.1. Dielectric Film Trends
      • 8.2.2.2. Barrier Film Trends
      • 8.2.2.3. Conductor Film Trends
    • 8.2.3. Through-Si-Via (TSV), 3d Stacking Technology
      • 8.2.3.1. Introduction
      • 8.2.3.2. Through Si Via Technologies
    • 8.2.4. Emerging Interconnect Solutions
      • 8.2.4.1. Overview
      • 8.2.4.2. Cu Replacements
  • 8.3. Market Forecast Assumptions
  • 8.4. Market Forecast
    • 8.4.1. Chemical Vapor Deposition
    • 8.4.2. Physical Vapor Deposition
    • 8.4.3. Copper Electroplating Market
    • 8.4.4. Atomic Layer Deposition Market
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