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세계의 절연 게이트 양극성 트랜지스터(IGBT) 시장 : 예측(2021-2026년)

Global Insulated Gate Bipolar Transistor (IGBT) Market - Forecasts from 2021 to 2026

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발행일 2021년 12월 상품코드 1060133
페이지 정보 영문 126 Pages 배송안내 1-2일 (영업일 기준)
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세계의 절연 게이트 양극성 트랜지스터(IGBT) 시장 : 예측(2021-2026년) Global Insulated Gate Bipolar Transistor (IGBT) Market - Forecasts from 2021 to 2026
발행일 : 2021년 12월 페이지 정보 : 영문 126 Pages

본 상품은 영문 자료로 한글과 영문 목차에 불일치하는 내용이 있을 경우 영문을 우선합니다. 정확한 검토를 위해 영문목차를 참고해주시기 바랍니다.

세계의 절연 게이트 양극성 트랜지스터(IGBT) 시장 규모는 2019년 47억 5,100만 달러에서 2026년까지 86억 9,600만 달러에 달하고, 9.02%의 CAGR로 성장할 것으로 예측됩니다.

세계의 절연 게이트 양극성 트랜지스터(IGBT : Insulated Gate Bipolar Transistor) 시장에 대해 조사 분석했으며, 시장 역학, 시장 분석, 경쟁 정보, 기업 개요 등 체계적인 정보를 제공합니다.


제1장 서론

  • 시장 개요
  • COVID-19 시나리오
  • 시장 정의
  • 시장 세분화

제2장 조사 방법

  • 조사 데이터
  • 가정

제3장 주요 요약

  • 조사 하이라이트

제4장 시장 역학

  • 시장 성장 촉진요인
  • 시장 성장 억제요인
  • Porter's Five Forces 분석
    • 공급 기업의 협상력
    • 구매자의 협상력
    • 신규 참여업체의 위협
    • 대체품의 위협
    • 업계의 경쟁 기업간 경쟁 관계
  • 업계의 밸류체인 분석

제5장 세계의 IGBT 시장 : 종류별

  • 서론
  • 디스크리트 IGBT
  • 모듈러 IGBT

제6장 세계의 IGBT 시장 : 정격출력별

  • 서론
  • 고전력
  • 중전력
  • 저전력

제7장 세계의 IGBT 시장 : 업계별

  • 서론
  • 에너지·전력
  • 가전제품
  • 자동차
  • 여행·수송
  • 기타

제8장 세계의 IGBT 시장 : 지역별

  • 서론
  • 북미
    • 미국
    • 캐나다
    • 멕시코
  • 남미
    • 브라질
    • 아르헨티나
    • 기타
  • 유럽
    • 영국
    • 독일
    • 프랑스
    • 스페인
    • 기타
  • 중동 및 아프리카
    • 이스라엘
    • 사우디아라비아
    • 기타
  • 아시아태평양
    • 중국
    • 일본
    • 인도
    • 한국
    • 대만
    • 태국
    • 인도네시아
    • 기타

제9장 경쟁 환경과 분석

  • 주요 기업과 전략 분석
  • 신흥 기업과 시장 수익성
  • 합병, 인수, 합의 및 협업
  • 벤더 경쟁 매트릭스

제10장 기업 개요

  • Danfoss
  • Hitachi ABB
  • Infineon Technologies AG
  • Fuji Electric Co., Ltd.
  • ROHM Semiconductor
  • Toshiba Electronic Devices and Storage Corporation
  • Renesas Electronics Corporation
  • Mitsubishi Electric Corporation
  • SEMIKRON International GmbH
KSM 22.03.14

The global IGBT market is projected to grow at a CAGR of 9.02% to reach US$8.696 billion by 2026, from US$4.751 billion in 2019. Insulated-gate bipolar transistor refers to a type of power semiconductor which is used as an electric switch device and offers higher efficiency and faster switching. The higher adoption as compared to Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) is due to its cost-effectiveness at high voltages and current. It enhances energy conservation by enabling power management in various industrial applications including consumer electronics, electric vehicles, and industrial systems.

Driving Factors

The surging demand for electric vehicles among consumers is rising the demand for insulated-gate bipolar transistors in the global market during the forecast period, The insulated-gate bipolar transistor plays a vital role in the manufacturing and production of electric vehicles. Owing to its high current carry capability and high voltage the insulated-gate bipolar transistor is widely used in high power to medium powered applications including electric vehicle inverters. In the year 2019, Audi announced the adoption of Hitachi's EV inverter which is equipped with a built-in next-generation insulated-gate bipolar transistor and a power module to provide maximum motor performance owing to the high-power density output. Hence, the rising demand for electric vehicles in the global market is further leading to the adoption of insulated-gate bipolar transistors during the forecast period. Furthermore, the global warming effect and the ever-changing climatic changes are raising awareness regarding the use of energy resources in each field. Thus, the demand from the automotive industry in the manufacturing of electric vehicles to save energy resources is leading to the high adoption of insulated-gate bipolar transistors in the industry sector. The rising fuel prices have further boosted the demand and adoption of electric vehicles in the global market which in turn is fueling the market growth of the global IGBT market.

The growing concerns to boost the renewable energy foundations will be led to its growth.

One of the prime reasons for the growth of the global IGBT industry is the growing concerns to boost the renewable energy foundations which in turn will fuel the market growth of insulated-gate bipolar transistors in the global market. The growing investments by the government of several nations in renewable energy are further leading to the growth of the global IGBT market. Also, the drop in the costs of renewable energy sources such as wind energy, solar energy in recent years is leading to its growing adoption across various industry verticals.

Market Segmentation

By industry vertical, the global IGBT market is segmented into energy and power, consumer electronics, automotive, travel and transportation, and others. The automotive segment is anticipated to grow at a substantial rate owing to the introduction of electric vehicles as it finds its major application in the smooth operation of electric vehicles in carrying power to the grid at a stable rate. Insulated gate bipolar transistor and FWD chips with an isolation layer, multiple devices, and protection parts are packed into the module to offer increased power, reliability, and prolonged lifetime. By type, the global IGBT market is segmented into discrete IGBT and modular IGBT.

By power rating, the global IGBT market is segmented into high-power, medium-power, and low-power among which the high-power segment is anticipated to grow at a faster pace owing to the large industrial application of high-powered insulated gate bipolar transistor which offers gate control using voltage and high current carrying ability in leading industries such as aircraft, automobile, and UAVs.

Geographically, North America and the Asia Pacific region are expected to show prominent growth during the forecast period owing to the presence of major semiconductor and electronics manufacturers in developing nations including Japan, India, China, and South Korea. The rising applications of insulated gate bipolar transistors in electric vehicles have led to its increasing demand in the region. Also, the technological advancements in the insulated gate bipolar transistors and the rising demand for energy-saving resources in the region are leading to its widespread adoption during the forecast period. The rising implementation and growing awareness of renewable resources among industries and the growing opportunities in the North American region in the insulated gate bipolar transistors market are leading to the rising adoption of insulated gate bipolar transistors in the region during the forecast period.


The design complexities will hamper the growth of the global IGBT market. A major restraint in the growth of the global IGBT market is the design complexities. Latch-up linked with gate control of an insulated gate bipolar transistor can cause easy breakage which may fail the device. A minute decrease in the latching current density accounts for the increase in the increase in the turnoff time and an increase in the ambient temperature. The gate has no longer control over the drain current as the transistor enters the latch-up state. The excessive power dissipation is likely to destroy the bipolar transistor if the latch-up is not terminated quickly. These complexities in the design are expected to hamper the growth of the global IGBT market during the forecast period.

Competitive Insights

The market leaders in the global IGBT market are Danfoss, Hitachi ABB, Infineon Technologies AG, Fuji Electric Co., Ltd., ROHM Semiconductor, Toshiba Electronic Devices, and Storage Corporation, SEMIKRON, Renesas Electronics Corporation, Mitsubishi Electric Corporation, SEMIKRON International GmbH


  • By Type

Discrete IGBT

Modular IGBT

  • By Power Rating

High- Power

Medium- Power

Low- Power

  • By Industry Vertical

Energy and Power

Consumer Electronics


Travel and Transportation


  • By Geography

North America

  • USA
  • Canada
  • Mexico

South America

  • Brazil
  • Argentina
  • Others


  • UK
  • Germany
  • France
  • Spain
  • Others

Middle East and Africa

  • Saudi Arabia
  • Israel
  • Others

Asia Pacific

  • Japan
  • China
  • India
  • South Korea
  • Indonesia
  • Taiwan
  • Thailand
  • Others

Table of Contents

1. Introduction

  • 1.1. Market Overview
  • 1.2. Covid-19 Scenario
  • 1.3. Market Definition
  • 1.4. Market Segmentation

2. Research Methodology

  • 2.1. Research Data
  • 2.2. Assumptions

3. Executive Summary

  • 3.1. Research Highlights

4. Market Dynamics

  • 4.1. Market Drivers
  • 4.2. Market Restraints
  • 4.3. Porter's Five Forces Analysis
    • 4.3.1. Bargaining Power of Suppliers
    • 4.3.2. Bargaining Power of Buyers
    • 4.3.3. Threat of New Entrants
    • 4.3.4. Threat of Substitutes
    • 4.3.5. Competitive Rivalry in the Industry
  • 4.4. Industry Value Chain Analysis

5. Global IGBT Market, By Type

  • 5.1. Introduction
  • 5.2. Discrete IGBT
  • 5.3. Modular IGBT

6. Global IGBT Market, By Power Rating

  • 6.1. Introduction
  • 6.2. High- Power
  • 6.3. Medium- Power
  • 6.4. Low- Power

7. Global IGBT Market, By Industry Vertical

  • 7.1. Introduction
  • 7.2. Energy and Power
  • 7.3. Consumer Electronics
  • 7.4. Automotive
  • 7.5. Travel and Transportation
  • 7.6. Others

8. Global IGBT Market, By Geography

  • 8.1. Introduction
  • 8.2. North America
    • 8.2.1. United States
    • 8.2.2. Canada
    • 8.2.3. Mexico
  • 8.3. South America
    • 8.3.1. Brazil
    • 8.3.2. Argentina
    • 8.3.3. Others
  • 8.4. Europe
    • 8.4.1. UK
    • 8.4.2. Germany
    • 8.4.3. France
    • 8.4.4. Spain
    • 8.4.5. Others
  • 8.5. Middle East and Africa
    • 8.5.1. Israel
    • 8.5.2. Saudi Arabia
    • 8.5.3. Others
  • 8.6. Asia Pacific
    • 8.6.1. China
    • 8.6.2. Japan
    • 8.6.3. India
    • 8.6.4. South Korea
    • 8.6.5. Taiwan
    • 8.6.6. Thailand
    • 8.6.7. Indonesia
    • 8.6.8. Others

9. Competitive Environment and Analysis

  • 9.1. Major Players and Strategy Analysis
  • 9.2. Emerging Players and Market Lucrativeness
  • 9.3. Mergers, Acquisitions, Agreements, and Collaborations
  • 9.4. Vendor Competitiveness Matrix

10. Company Profiles

  • 10.1. Danfoss
  • 10.2. Hitachi ABB
  • 10.3. Infineon Technologies AG
  • 10.4. Fuji Electric Co., Ltd.
  • 10.5. ROHM Semiconductor
  • 10.6. Toshiba Electronic Devices and Storage Corporation
  • 10.7. SEMIKRON
  • 10.8. Renesas Electronics Corporation
  • 10.9. Mitsubishi Electric Corporation
  • 10.10. SEMIKRON International GmbH
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