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차세대 트랜지스터 시장 : 성장, 동향, 예측(2019-2024년)

Next-Generation Transistors Market - Growth, Trends, COVID-19 Impact, and Forecasts (2021 - 2026)

리서치사 Mordor Intelligence Pvt Ltd
발행일 2021년 01월 상품 코드 393533
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차세대 트랜지스터 시장 : 성장, 동향, 예측(2019-2024년) Next-Generation Transistors Market - Growth, Trends, COVID-19 Impact, and Forecasts (2021 - 2026)
발행일 : 2021년 01월 페이지 정보 : 영문

본 상품은 영문 자료로 한글과 영문목차에 불일치하는 내용이 있을 경우 영문을 우선합니다. 정확한 검토를 위해 영문목차를 참고해주시기 바랍니다.

세계의 차세대 트랜지스터(Next-Generation Transistors) 시장에 대해 조사했으며, 시장 기회와 동향, 성장 촉진요인 및 저해요인, 종류·최종사용자 산업·지역별 시장 분석, 경쟁 상황, 주요 기업 개요 등의 정보를 제공합니다.

목차

제1장 서론

  • 조사 성과
  • 조사의 전제조건
  • 조사 범위

제2장 조사 방법

제3장 주요 요약

제4장 시장 역학

  • 시장 개요
  • 시장 역학 서론
  • 성장 촉진요인
    • 장치 밀도 증가를 요구하는 기술 발전
    • 가전의 급증 및 산업 부문에서의 전자기기 사용 증가
  • 성장 저해요인
    • 무어의 법칙을 유지하기 위한 매출이 적고 높은 비용
  • 산업 밸류체인 분석
  • 산업의 매력 : Porter's Five Forces 분석
    • 신규 참여업체의 위협
    • 구매자/소비자의 협상력
    • 공급업체의 협상력
    • 대체 제품의 위협
    • 업계내 경쟁

제5장 시장 세분화

  • 종류별
    • High Electron Mobility Transistor(HEMT)
    • Bipolar Junction Transistor(BJT)
    • Field Effect Transistors(FET)
    • Multiple Emitter Transistor(MET)
    • Dual Gate Metal Oxide Semiconductor Field Effective Transistor
  • 최종사용자 산업별
    • 항공우주 및 방위
    • 산업
    • 통신
    • 가전
  • 지역별
    • 북미
    • 유럽
    • 아시아태평양
    • 라틴아메리카
    • 중동 및 아프리카

제6장 경쟁 상황

  • 기업 개요
    • NXP Semiconductors NV
    • Infineon Technologies AG
    • STMicroelectronics NV
    • Fairchild Semiconductor International, Inc.(ON Semiconductor Corp.)
    • Texas Instruments Incorporated
    • Intel Corporation
    • GLOBALFOUNDRIES Inc.
    • Taiwan Semiconductor Manufacturing Company
    • Samsung Electronics Co., Ltd
    • Microchip Technology Inc.

제7장 투자 분석

제8장 시장 기회 및 향후 동향

LSH 19.12.23

The next-generation transistors market is expected to grow at a CAGR of 4% over the forecast period (2021-2026). Transistors have always played a central role in many electronic circuits, where they usually function either as a switch or an amplifier. With current silicon-based transistors topping up at around 14 nm, the semiconductor industry is currently on the search for new materials that can prolong Moore's law at smaller scales. The last two decades have experienced the scaling of silicon transistor dimensions that have powered the electronics revolution, with transistors reaching nanometre sizes. As CMOS continues to scale down beyond a certain point, reliability issues have scaled up. To exceed the limits of silicon, new channel materials with high carrier velocities are being developed to support the Next-Generation of Transistors. For instance, he finFET according to Intel is scalable to 14nm and Intel has already started working on solutions for 10nm and below fabrications using advanced technologies.

Key Market Trends

Technological Advancements to Drive the Demand for Increasing Device Densities

  • Manufacturers have to find suitable replacements for existing products to accommodate the consumer needs. Moore's law has been in place for decades reducing the size of the wafer, while increasing the device density, this has been the way to cater to growing need for faster processing.
  • The Tri-Gate transistor design released by Intel Corporation has laid the foundation for the development of better 3D-structured transistors that are capable of enhanced performance. This introduction of 3D to the design has led to vast improvements over the planar transistor structure.
  • These advantages quantify themselves in the form of improved performance, reduced leakage current, huge increase in the device density, and a reduction in susceptibility of the transistor to charged particle single-event upsets.
  • This decrease in size has led to an increase in the device density and upgraded the functional capacity of the chip. The ability to increase the number of devices in the chip influences performance of the complete system, while reducing the cost of each wafer.

Asia-Pacific to Register the Fastest Growth Rate

  • The developing economies of the region such as China and Japan have huge manufacturing bases for electronics and hence, hold the potential to become major players in the transistors market.
  • China, however, has lagged behind Taiwan, and South Korea in chip development. China, in order to change this scenario, has made the development of its own semiconductor sector a core part of its Made in China 2025 plan.
  • China hopes to bolster its share of the electronics market, while having domestic production reach 80% of domestic demand for chips to power the myriad of smartphones, computers and other devices its 1.4 billion people use on a daily basis. All these factors are expected to contribute to the market growth.

Competitive Landscape

The next-generation transistors market is a highly competitive market. The semiconductor industry itself is going through a phase of specialization. Historically, the industry has concentrated on producing computer chips that could perform several generalized functions. These chips were related to each other to some extent. But today the applications of the semiconductors are more nuanced and differentiated leading to the proliferation of a number of niche players with specialized expertise across various verticals. Moreover, in this industry, a lot of players do outsource their functionalities except a few major players like Intel who do design, fabrication, and manufacturing of semiconductor products. This makes the industry deeply connected to global supply chains and have made this industry both fiercely competitive as well as deeply collaborative.

The factors mentioned above make the next-generation transistors market a fragmented market with the presence of a large number of players. Some of the significant players are Intel Corporation, Infineon Technologies AG, STMicroelectronics N.V., Texas Instruments Incorporated, NXP Semiconductors N.V. Some of the recent developments in this industry are as follows:-

  • May 2019 - Samsung announced plans to begin production of one of two 3-nm GAA processes that it plans to offer by the second half of 2020, with mass production expected in 2021. The company plans to begin production of the next 3-nm GAA process in 2021, with mass production expected in 2022. Samsung started to volume production on its 7-nm FinFET process, the first to make use of next-generation extreme ultraviolet (EUV) lithography.
  • September 2018 - NXP Semiconductors N.V. announced the launch of new RF power transistors designed for smart industrial applications, featuring the groundbreaking 65 V laterally diffused metal oxide semiconductor (LDMOS) silicon technology that targets industrial, scientific and medical applications such as laser generation, plasma processing, magnetic-resonance imaging, skin treatment and diathermy as well as the growing segment of RF Energy where transistors.

Reasons to Purchase this report:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Deliverables
  • 1.2 Study Assumptions
  • 1.3 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET DYNAMICS

  • 4.1 Market Overview
  • 4.2 Introduction to Market Dynamics
  • 4.3 Market Drivers
    • 4.3.1 Technological Advancements Leading To Demand for Increasing Device Densities
    • 4.3.2 Proliferation of Consumer Electronics and Increased Use of Electronics in the Industrial Sector will Drive the Demand
  • 4.4 Market Restraints
    • 4.4.1 Cost of Maintaining Moore's Law is Getting Higher with Low Returns
  • 4.5 Industry Value Chain Analysis
  • 4.6 Industry Attractiveness - Porter's Five Force Analysis
    • 4.6.1 Threat of New Entrants
    • 4.6.2 Bargaining Power of Buyers/Consumers
    • 4.6.3 Bargaining Power of Suppliers
    • 4.6.4 Threat of Substitute Products
    • 4.6.5 Intensity of Competitive Rivalry

5 MARKET SEGMENTATION

  • 5.1 By Type
    • 5.1.1 High Electron Mobility Transistor (HEMT)
    • 5.1.2 Bipolar Junction Transistor (BJT)
    • 5.1.3 Field Effect Transistors (FET)
    • 5.1.4 Multiple Emitter Transistor (MET)
    • 5.1.5 Dual Gate Metal Oxide Semiconductor Field Effective Transistor
  • 5.2 By End-User Industry
    • 5.2.1 Aerospace & Defense
    • 5.2.2 Industrial
    • 5.2.3 Telecommunications
    • 5.2.4 Consumer Electronics
  • 5.3 Geography
    • 5.3.1 North America
    • 5.3.2 Europe
    • 5.3.3 Asia Pacific
    • 5.3.4 Latin America
    • 5.3.5 Middle East & Africa

6 COMPETITIVE LANDSCAPE

  • 6.1 Company Profiles
    • 6.1.1 NXP Semiconductors N.V.
    • 6.1.2 Infineon Technologies AG
    • 6.1.3 STMicroelectronics N.V.
    • 6.1.4 Fairchild Semiconductor International, Inc. (ON Semiconductor Corp.)
    • 6.1.5 Texas Instruments Incorporated
    • 6.1.6 Intel Corporation
    • 6.1.7 GLOBALFOUNDRIES Inc.
    • 6.1.8 Taiwan Semiconductor Manufacturing Company
    • 6.1.9 Samsung Electronics Co., Ltd
    • 6.1.10 Microchip Technology Inc.

7 INVESTMENT ANALYSIS

8 MARKET OPPORTUNITIES AND FUTURE TRENDS

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