½ÃÀ庸°í¼­
»óǰÄÚµå
1266648

¼¼°èÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå ±Ô¸ð Á¶»ç ¹× ¿¹Ãø : À¯Çüº°, ¿ëµµº°, ÃÖÁ¾ »ç¿ëÀÚº°, Áö¿ªº° ºÐ¼®(2022-2029³â)

Global Field Effect Transistor Market Size study & Forecast, by Type, by Application, by End-User and Regional Analysis, 2022-2029

¹ßÇàÀÏ: | ¸®¼­Ä¡»ç: Bizwit Research & Consulting LLP | ÆäÀÌÁö Á¤º¸: ¿µ¹® | ¹è¼Û¾È³» : 2-3ÀÏ (¿µ¾÷ÀÏ ±âÁØ)

¡Ø º» »óǰÀº ¿µ¹® ÀÚ·á·Î Çѱ۰ú ¿µ¹® ¸ñÂ÷¿¡ ºÒÀÏÄ¡ÇÏ´Â ³»¿ëÀÌ ÀÖÀ» °æ¿ì ¿µ¹®À» ¿ì¼±ÇÕ´Ï´Ù. Á¤È®ÇÑ °ËÅ並 À§ÇØ ¿µ¹® ¸ñÂ÷¸¦ Âü°íÇØÁֽñ⠹ٶø´Ï´Ù.

Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ´Â Àü°è¸¦ ÀÌ¿ëÇØ Àü·ùÀÇ È帧À» Á¦¾îÇÏ´Â 3´ÜÀÚ ´Éµ¿¼ÒÀÚÀÔ´Ï´Ù.

ÀÔ·Â ÀÓÇÇ´ø½º°¡ ³ô±â ¶§¹®¿¡ ´Ù¾çÇÑ È¸·Î¿¡ »ç¿ëÇÒ ¼ö ÀÖ½À´Ï´Ù.

Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀåÀº Àü·Â È¿À²ÀÌ ³ôÀº ÀüÀÚ±â±â¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡¿Í ģȯ°æ ¿¡³ÊÁö ¹ßÀü ¼ö¿ä µîÀÇ ¿äÀÎÀ¸·Î ÀÎÇØ È®´ëµÇ°í ÀÖ´Ù.

Statista¿¡ µû¸£¸é ¼¼°è Àü·Â ¼Òºñ·®Àº ºü¸£°Ô Áõ°¡Çϰí ÀÖÀ¸¸ç, 2021³â¿¡´Â ¾à 25,300 Å×¶ó ¿ÍÆ®½Ã¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹»óµÇ¸ç ÇâÈÄ ¸î ³â µ¿¾È Áõ°¡ÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ¶ÇÇÑ, ¼ÒºñÀÚ °¡Àü ½ÃÀåÀº 2023³â 1,030¾ï ´Þ·¯ÀÇ ¼öÀÍÀ» âÃâÇÒ °ÍÀ¸·Î ¿¹»óµÇ¸ç, ¾à 2.17%ÀÇ ¼ºÀå·üÀ» º¸ÀÏ °ÍÀ¸·Î ÃßÁ¤µË´Ï´Ù. ¿¡³ÊÁö »ý»ê¿¡ ´ëÇÑ Á¤ºÎÀÇ ÁýÁß°ú ÁöÃâ Áõ°¡, ±×¸®°í ÃÖÁ¾ »ç¿ëÀÚ »ê¾÷¼ö¿ä´Â ½ÃÀå¿¡ À¯¸®ÇÑ ±âȸ¸¦ âÃâÇϰí ÀÖ½À´Ï´Ù. ±×·¯³ª Á¤Àü±âÀå È¿°ú·Î ÀÎÇØ Æ®·£Áö½ºÅͰ¡ ¼Õ»óµÉ ¼ö ÀÖ¾î 2022-2029³âÀÇ ¿¹Ãø ±â°£ µ¿¾È ½ÃÀå ¼ºÀå¿¡ °É¸²µ¹ÀÌ µÉ °ÍÀ¸·Î º¸ÀÔ´Ï´Ù.

Àü°èÈ¿°ú Æ®·£Áö½ºÅÍÀÇ ¼¼°è ½ÃÀå Á¶»ç¿¡¼­ °í·ÁµÈ ÁÖ¿ä Áö¿ªÀº ¾Æ½Ã¾ÆÅÂÆò¾ç, ºÏ¹Ì, À¯·´, Áß³²¹Ì, ±âŸ Áö¿ªÀÔ´Ï´Ù. ºÏ¹Ì´Â ÀÚµ¿Â÷ ¹× °¡ÀüÁ¦Ç°°ú °°Àº ÃÖÁ¾ ÀÌ¿ë »ê¾÷¼ö¿ä Áõ°¡·Î ÀÎÇØ ¸ÅÃâ ±âÁØÀ¸·Î ½ÃÀåÀ» ÁÖµµÇϰí ÀÖ½À´Ï´Ù. ¹Ý¸é, ¾Æ½Ã¾ÆÅÂÆò¾çÀº ÀüÀÚÁ¦Ç° ¼ö¿ä Áõ°¡, ÀüÀÚÁ¦Ç°¿¡ ´ëÇÑ ¼Òºñ ÁöÃâ Áõ°¡, ȯ°æ º¸È£¿¡ ´ëÇÑ Á¤ºÎ ±ÔÁ¦ °­È­ µîÀÇ ¿äÀÎÀ¸·Î ÀÎÇØ ¿¹Ãø ±â°£ µ¿¾È °¡Àå ³ôÀº CAGR·Î ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.

ÀÌ Á¶»çÀÇ ¸ñÀûÀº ÃÖ±Ù ¸î ³â µ¿¾È ´Ù¾çÇÑ ºÎ¹®°ú ±¹°¡ ½ÃÀå ±Ô¸ð¸¦ ÆÄ¾ÇÇϰí ÇâÈÄ ¸î ³â µ¿¾È ½ÃÀå ±Ô¸ð¸¦ ¿¹ÃøÇÏ´Â °ÍÀÔ´Ï´Ù. ÀÌ º¸°í¼­´Â Á¶»ç ´ë»ó ±¹°¡ÀÇ »ê¾÷ÀÇ ÁúÀû, ¾çÀû Ãø¸éÀ» ¸ðµÎ Æ÷ÇÔÇϵµ·Ï ¼³°èµÇ¾ú½À´Ï´Ù.

¶ÇÇÑ ½ÃÀåÀÇ ¹Ì·¡ ¼ºÀåÀ» ±ÔÁ¤ÇÏ´Â ÃËÁø¿äÀΰú °úÁ¦¿Í °°Àº Áß¿äÇÑ Ãø¸é¿¡ ´ëÇÑ ÀÚ¼¼ÇÑ Á¤º¸µµ Á¦°øÇÕ´Ï´Ù. ¶ÇÇÑ, ÁÖ¿ä ±â¾÷ÀÇ °æÀï ȯ°æ°ú Á¦Ç° Á¦°ø¿¡ ´ëÇÑ »ó¼¼ÇÑ ºÐ¼®°ú ÇÔ²² ÀÌÇØ°ü°èÀÚ°¡ ÅõÀÚÇÒ ¼ö ÀÖ´Â ¹Ì½ÃÀû ½ÃÀå¿¡¼­ÀÇ ÀáÀçÀû ±âȸµµ Æ÷ÇԵ˴ϴÙ.

¸ñÂ÷

Á¦1Àå ÁÖ¿ä ¿ä¾à

  • ½ÃÀå ÇöȲ
  • ¼¼°è¡¤ºÎ¹®º° ½ÃÀå ÃßÁ¤¡¤¿¹Ãø, 2019³â-2029³â
    • Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå, Áö¿ªº°, 2019-2029³â
    • Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå, À¯Çüº°, 2019-2029³â
    • Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå, ¿ëµµº°, 2019-2029³â
    • Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå, ÃÖÁ¾»ç¿ëÀÚº°, 2019-2029³â
  • ÁÖ¿ä µ¿Çâ
  • Á¶»ç ¹æ¹ý
  • Á¶»çÀÇ ÀüÁ¦Á¶°Ç

Á¦2Àå ¼¼°èÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå Á¤ÀÇ¿Í ¹üÀ§

  • Á¶»ç ¸ñÀû
  • ½ÃÀå Á¤ÀÇ¿Í ¹üÀ§
    • Á¶»ç ´ë»ó ¹üÀ§
    • »ê¾÷ ÁøÈ­
  • Á¶»ç ´ë»ó³âµµ
  • ÅëÈ­ ȯ»êÀ²

Á¦3Àå ¼¼°èÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå ¿ªÇÐ

  • Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå ¿µÇ⠺м®(2019-2029³â)
    • ½ÃÀå ¼ºÀå ÃËÁø¿äÀÎ
    • ½ÃÀåÀÌ ÇØ°áÇØ¾ß ÇÒ °úÁ¦
    • ½ÃÀå Âü¿© °¡´É¼º

Á¦4Àå ¼¼°èÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå »ê¾÷ ºÐ¼®

  • Porter's Five Forces ¸ðµ¨
    • °ø±Þ ±â¾÷ÀÇ ±³¼··Â
    • ¹ÙÀ̾îÀÇ ±³¼··Â
    • ½Å±Ô ÁøÃâ¾÷üÀÇ À§Çù
    • ´ëüǰÀÇ À§Çù
    • °æÀï ±â¾÷°£ °æÀï °ü°è
  • Porter's Five Forces ¸ðµ¨¿¡ ´ëÇÑ ¹Ì·¡Àû Á¢±Ù(2019-2029³â)
  • PEST ºÐ¼®
    • Á¤Ä¡Àû
    • °æÁ¦Àû
    • »çȸÀû
    • ±â¼úÀû
  • ÅõÀÚ Ã¤Åà ¸ðµ¨
  • ¾Ö³Î¸®½ºÆ®ÀÇ Á¦¾È°ú °á·Ð
  • ÁÖ¿ä ÅõÀÚ ±âȸ
  • ÁÖ¿ä ¼º°ø Àü·«

Á¦5Àå ¸®½ºÅ© Æò°¡ : COVID-19ÀÇ ¿µÇâ

  • COVID-19°¡ ¾÷°è¿¡°Ô ÁÖ´Â ÀüüÀûÀÎ ¿µÇâ¿¡ °üÇÑ Æò°¡
  • COVID-19 ÀÌÀü°ú COVID-19 ÀÌÈÄÀÇ ½ÃÀå ½Ã³ª¸®¿À

Á¦6Àå ¼¼°èÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå : À¯Çüº°

  • ½ÃÀå ÇöȲ
  • ¼¼°èÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå : À¯Çüº°, ½ÇÀû, °¡´É¼º ºÐ¼®
  • ¼¼°èÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå À¯Çüº° ÃßÁ¤¡¤¿¹Ãø(2019-2029³â)
  • Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå, ÇÏÀ§ ºÎ¹®º° ºÐ¼®
    • JFET
    • MOSFET

Á¦7Àå ¼¼°èÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå : ¿ëµµº°

  • ½ÃÀå ÇöȲ
  • ¼¼°èÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå : ¿ëµµ, ½ÇÀû-°¡´É¼º ºÐ¼®
  • ¼¼°èÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå ÃßÁ¤¡¤¿¹Ãø(¿ëµµº°) 2019-2029
  • Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå, ÇÏÀ§ ºÎ¹®º° ºÐ¼®
    • ¾Æ³¯·Î±× ½ºÀ§Ä¡
    • ÁõÆø±â
    • Phase Shift Oscillator
    • Àü·ù Á¦Çѱâ
    • µðÁöÅРȸ·Î
    • ±âŸ

Á¦8Àå ¼¼°èÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå : ÃÖÁ¾»ç¿ëÀÚº°

  • ½ÃÀå ÇöȲ
  • ¼¼°èÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå : ÃÖÁ¾»ç¿ëÀÚº°), ¼º´É-°¡´É¼º ºÐ¼®
  • ¼¼°èÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå ÃÖÁ¾»ç¿ëÀÚº° ÃßÁ¤¡¤¿¹Ãø(2019-2029³â)
  • Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå, ÇÏÀ§ ºÎ¹®º° ºÐ¼®
    • ÀÚµ¿Â÷
    • ¼ÒºñÀÚ ÀÏ·ºÆ®·Î´Ð½º
    • IT/ÅÚ·¹ÄÞ
    • ¹ßÀü »ê¾÷
    • ±âŸ ÃÖÁ¾»ç¿ëÀÚ

Á¦9Àå ¼¼°èÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå : Áö¿ªº° ºÐ¼®

  • Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå, Áö¿ªº° ½ÃÀå ÇöȲ
  • ºÏ¹Ì
    • ¹Ì±¹
      • À¯Çüº° ÃßÁ¤¡¤¿¹Ãø, 2019³â-2029³â
      • ¿ëµµº° ÃßÁ¤¡¤¿¹Ãø, 2019³â-2029³â
      • ÃÖÁ¾»ç¿ëÀÚº° ÃßÁ¤¡¤¿¹Ãø, 2019³â-2029³â
    • ij³ª´Ù
  • À¯·´ÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå ÇöȲ
    • ¿µ±¹
    • µ¶ÀÏ
    • ÇÁ¶û½º
    • ½ºÆäÀÎ
    • ÀÌÅ»¸®¾Æ
    • ±âŸ À¯·´
  • ¾Æ½Ã¾ÆÅÂÆò¾çÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå ÇöȲ
    • Áß±¹
    • Àεµ
    • ÀϺ»
    • È£ÁÖ
    • Çѱ¹
    • ±âŸ ¾Æ½Ã¾ÆÅÂÆò¾ç
  • ¶óƾ¾Æ¸Þ¸®Ä«ÀÇ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå ÇöȲ
    • ºê¶óÁú
    • ¸ß½ÃÄÚ
  • ¼¼°è ±âŸ Áö¿ª

Á¦10Àå °æÀï Á¤º¸

  • ÁÖ¿ä ½ÃÀå Àü·«
  • ±â¾÷ °³¿ä
    • Nexperia
      • ÁÖ¿ä Á¤º¸
      • °³¿ä
      • À繫(µ¥ÀÌÅÍ ÀÔ¼ö°¡ °¡´ÉÇÑ °æ¿ì)
      • Á¦Ç° °³¿ä
      • ÃÖ±Ù µ¿Çâ
    • Infineon Technologies AG
    • Vishay Intertechnology, Inc.
    • Taiwan Semiconductor Manufacturing Company Ltd
    • STMicroelectronics
    • Semiconductor Components Industries, LLC
    • Sensitron Semiconductor
    • Shindengen America Inc
    • NATIONAL INSTRUMENTS CORP.
    • Texas Instruments Inc

Á¦11Àå Á¶»ç °úÁ¤

  • Á¶»ç °úÁ¤
    • µ¥ÀÌÅÍ ¸¶ÀÌ´×
    • ºÐ¼®
    • ½ÃÀå ÃßÁ¤
    • ¹ë¸®µ¥À̼Ç
    • ÃâÆÇ
  • Á¶»ç Ư¡
  • Á¶»çÀÇ ÀüÁ¦Á¶°Ç
LSH 23.05.23

Global Field Effect Transistor Market is valued at approximately USD XX billion in 2021 and is anticipated to grow with a healthy growth rate of more than XX % over the forecast period 2022-2029. Field Effect Transistor is a three-terminal active device that uses an electric field to control current flow. It has a high input impedance, which makes it useful in a variety of circuits.

The Field Effect Transistor market is expanding because of factors such as the rising demand for power-efficient electronic devices and the demand for green energy power generation

According to Statista, global electricity consumption is rising rapidly. In 2021, the electricity consumption reached around 25,300 terawatt-hours and is projected to grow in the coming years. Also, the consumer electronic market is estimated to generate revenue of USD 103.00 billion in 2023. And growing with a growth rate of around 2.17 %. Whereas rising government focus and spending on energy generation and demand from end-user industries create lucrative opportunities for the market. However, due to the static electric field effect, transistors can be damaged hampers the market growth throughout the forecast period of 2022-2029.

The key regions considered for the Global Field Effect Transistor Market study include Asia Pacific, North America, Europe, Latin America, and the Rest of the World. North America dominated the market in terms of revenue, owing to the increasing demand from end-use industries such as automotive, and consumer electronics. Whereas the Asia Pacific is expected to grow with the highest CAGR during the forecast period, owing to factors such as increasing demand for electronic devices, rising consumer spending on electronics, and rising government regulations toward environmental protection.

Major market players included in this report are:

  • Nexperia
  • Infineon Technologies AG
  • Vishay Intertechnology, Inc.
  • Taiwan Semiconductor Manufacturing Company Ltd
  • STMicroelectronics
  • Semiconductor Components Industries, LLC
  • Sensitron Semiconductor
  • Shindengen America Inc
  • NATIONAL INSTRUMENTS CORP.
  • Texas Instruments Inc

Recent Developments in the Market:

  • In June 2022, The University of Tokyo's Institute of Industrial Science created three-dimensional vertically formed field-effect transistors to create high-density data storage devices using a ferroelectric gate insulator and an atomic-layer-deposited oxide semiconductor channel.
  • In June 2022, Nanosheets are a type of gate-all-around field-effect transistor (GAAFET), with a gate-encircling floating transistor fins. TSMC announced that nanosheets will be used in their 2nm process, which will go into production in 2025. TSMC is looking for novel transistor layouts that can reduce energy consumption in high-performance computing applications such as data centres, which contribute significantly to global warming.

Global Field Effect Transistor Market Report Scope:

  • Historical Data: 2019-2020-2021
  • Base Year for Estimation: 2021
  • Forecast period: 2022-2029
  • Report Coverage: Revenue forecast, Company Ranking, Competitive Landscape, Growth factors, and Trends
  • Segments Covered: Type, Application, End-user, Region
  • Regional Scope: North America; Europe; Asia Pacific; Latin America; Rest of the World
  • Customization Scope: Free report customization (equivalent up to 8 analyst's working hours) with purchase. Addition or alteration to country, regional & segment scope*

The objective of the study is to define market sizes of different segments & countries in recent years and to forecast the values to the coming years. The report is designed to incorporate both qualitative and quantitative aspects of the industry within countries involved in the study.

The report also caters detailed information about the crucial aspects such as driving factors & challenges which will define the future growth of the market. Additionally, it also incorporates potential opportunities in micro markets for stakeholders to invest along with the detailed analysis of competitive landscape and product offerings of key players. The detailed segments and sub-segment of the market are explained below.

By Type:

  • JFET
  • MOSFET

By Application:

  • Analog Switches
  • Amplifiers
  • Phase Shift Oscillator
  • Current Limiter
  • Digital Circuits
  • Others

By End-user:

  • Automotive
  • Consumer electronics
  • IT/Telecom
  • Power Generating Industries
  • Other End Uses

By Region:

  • North America
  • U.S.
  • Canada
  • Europe
  • UK
  • Germany
  • France
  • Spain
  • Italy
  • ROE
  • Asia Pacific
  • China
  • India
  • Japan
  • Australia
  • South Korea
  • RoAPAC
  • Latin America
  • Brazil
  • Mexico
  • Rest of the World

Table of Contents

Chapter 1. Executive Summary

  • 1.1. Market Snapshot
  • 1.2. Global & Segmental Market Estimates & Forecasts, 2019-2029 (USD Billion)
    • 1.2.1. Field Effect Transistor Market, by Region, 2019-2029 (USD Billion)
    • 1.2.2. Field Effect Transistor Market, by Type, 2019-2029 (USD Billion)
    • 1.2.3. Field Effect Transistor Market, by Application, 2019-2029 (USD Billion)
    • 1.2.4. Field Effect Transistor Market, by End User, 2019-2029 (USD Billion)
  • 1.3. Key Trends
  • 1.4. Estimation Methodology
  • 1.5. Research Assumption

Chapter 2. Global Field Effect Transistor Market Definition and Scope

  • 2.1. Objective of the Study
  • 2.2. Market Definition & Scope
    • 2.2.1. Scope of the Study
    • 2.2.2. Industry Evolution
  • 2.3. Years Considered for the Study
  • 2.4. Currency Conversion Rates

Chapter 3. Global Field Effect Transistor Market Dynamics

  • 3.1. Field Effect Transistor Market Impact Analysis (2019-2029)
    • 3.1.1. Market Drivers
      • 3.1.1.1. Rising demand for power-efficient electronic devices
      • 3.1.1.2. Demand for green energy power generation
    • 3.1.2. Market Challenges
      • 3.1.2.1. Due to the Static Electricity Field Effect Transistors can be Damaged.
    • 3.1.3. Market Opportunities
      • 3.1.3.1. Government focus and spending towards energy generation
      • 3.1.3.2. Rising demand from end-user industries

Chapter 4. Global Field Effect Transistor Market Industry Analysis

  • 4.1. Porter's 5 Force Model
    • 4.1.1. Bargaining Power of Suppliers
    • 4.1.2. Bargaining Power of Buyers
    • 4.1.3. Threat of New Entrants
    • 4.1.4. Threat of Substitutes
    • 4.1.5. Competitive Rivalry
  • 4.2. Futuristic Approach to Porter's 5 Force Model (2019-2029)
  • 4.3. PEST Analysis
    • 4.3.1. Political
    • 4.3.2. Economical
    • 4.3.3. Social
    • 4.3.4. Technological
  • 4.4. Investment Adoption Model
  • 4.5. Analyst Recommendation & Conclusion
  • 4.6. Top investment opportunity
  • 4.7. Top winning strategies

Chapter 5. Risk Assessment: COVID-19 Impact

  • 5.1. Assessment of the overall impact of COVID-19 on the industry
  • 5.2. Pre COVID-19 and post COVID-19 Market scenario

Chapter 6. Global Field Effect Transistor Market, by Type

  • 6.1. Market Snapshot
  • 6.2. Global Field Effect Transistor Market by Type, Performance - Potential Analysis
  • 6.3. Global Field Effect Transistor Market Estimates & Forecasts by Type 2019-2029 (USD Billion)
  • 6.4. Field Effect Transistor Market, Sub Segment Analysis
    • 6.4.1. JFET
    • 6.4.2. MOSFET

Chapter 7. Global Field Effect Transistor Market, by Application

  • 7.1. Market Snapshot
  • 7.2. Global Field Effect Transistor Market by Application, Performance - Potential Analysis
  • 7.3. Global Field Effect Transistor Market Estimates & Forecasts by Application 2019-2029 (USD Billion)
  • 7.4. Field Effect Transistor Market, Sub Segment Analysis
    • 7.4.1. Analog Switches
    • 7.4.2. Amplifiers
    • 7.4.3. Phase Shift Oscillator
    • 7.4.4. Current Limiter
    • 7.4.5. Digital Circuits
    • 7.4.6. Others

Chapter 8. Global Field Effect Transistor Market, by End User

  • 8.1. Market Snapshot
  • 8.2. Global Field Effect Transistor Market by End User, Performance - Potential Analysis
  • 8.3. Global Field Effect Transistor Market Estimates & Forecasts by End User 2019-2029 (USD Billion)
  • 8.4. Field Effect Transistor Market, Sub Segment Analysis
    • 8.4.1. Automotive
    • 8.4.2. Consumer electronics
    • 8.4.3. IT/Telecom
    • 8.4.4. Power Generating Industries
    • 8.4.5. Other End Uses

Chapter 9. Global Field Effect Transistor Market, Regional Analysis

  • 9.1. Field Effect Transistor Market, Regional Market Snapshot
  • 9.2. North America Field Effect Transistor Market
    • 9.2.1. U.S. Field Effect Transistor Market
      • 9.2.1.1. Type breakdown estimates & forecasts, 2019-2029
      • 9.2.1.2. Application breakdown estimates & forecasts, 2019-2029
      • 9.2.1.3. End User breakdown estimates & forecasts, 2019-2029
    • 9.2.2. Canada Field Effect Transistor Market
  • 9.3. Europe Field Effect Transistor Market Snapshot
    • 9.3.1. U.K. Field Effect Transistor Market
    • 9.3.2. Germany Field Effect Transistor Market
    • 9.3.3. France Field Effect Transistor Market
    • 9.3.4. Spain Field Effect Transistor Market
    • 9.3.5. Italy Field Effect Transistor Market
    • 9.3.6. Rest of Europe Field Effect Transistor Market
  • 9.4. Asia-Pacific Field Effect Transistor Market Snapshot
    • 9.4.1. China Field Effect Transistor Market
    • 9.4.2. India Field Effect Transistor Market
    • 9.4.3. Japan Field Effect Transistor Market
    • 9.4.4. Australia Field Effect Transistor Market
    • 9.4.5. South Korea Field Effect Transistor Market
    • 9.4.6. Rest of Asia Pacific Field Effect Transistor Market
  • 9.5. Latin America Field Effect Transistor Market Snapshot
    • 9.5.1. Brazil Field Effect Transistor Market
    • 9.5.2. Mexico Field Effect Transistor Market
  • 9.6. Rest of The World Field Effect Transistor Market

Chapter 10. Competitive Intelligence

  • 10.1. Top Market Strategies
  • 10.2. Company Profiles
    • 10.2.1. Nexperia
      • 10.2.1.1. Key Information
      • 10.2.1.2. Overview
      • 10.2.1.3. Financial (Subject to Data Availability)
      • 10.2.1.4. Product Summary
      • 10.2.1.5. Recent Developments
    • 10.2.2. Infineon Technologies AG
    • 10.2.3. Vishay Intertechnology, Inc.
    • 10.2.4. Taiwan Semiconductor Manufacturing Company Ltd
    • 10.2.5. STMicroelectronics
    • 10.2.6. Semiconductor Components Industries, LLC
    • 10.2.7. Sensitron Semiconductor
    • 10.2.8. Shindengen America Inc
    • 10.2.9. NATIONAL INSTRUMENTS CORP.
    • 10.2.10. Texas Instruments Inc

Chapter 11. Research Process

  • 11.1. Research Process
    • 11.1.1. Data Mining
    • 11.1.2. Analysis
    • 11.1.3. Market Estimation
    • 11.1.4. Validation
    • 11.1.5. Publishing
  • 11.2. Research Attributes
  • 11.3. Research Assumption
ºñ±³¸®½ºÆ®
0 °ÇÀÇ »óǰÀ» ¼±Åà Áß
»óǰ ºñ±³Çϱâ
Àüü»èÁ¦