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세계의 IC 제조용 기기 및 재료 시장

The Global Market for Equipment and Materials for IC Manufacturing

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발행일 2021년 03월 상품 코드 6131
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세계의 IC 제조용 기기 및 재료 시장 The Global Market for Equipment and Materials for IC Manufacturing
발행일 : 2021년 03월 페이지 정보 : 영문

본 상품은 영문 자료로 한글과 영문목차에 불일치하는 내용이 있을 경우 영문을 우선합니다. 정확한 검토를 위해 영문목차를 참고해주시기 바랍니다.

IC 제조에 관련된 각종 기기 및 재료 시장의 동향, 과제 및 향후 전망 등에 대해 전해드립니다.

    제1장 서론
    제2장 저유전체 층간 절연체의 과제 및 동향
    • 서론
    • 이상적인 유전체
    • 저유전체 층간 절연체의 종류
      • FSG
      • HSQ
      • Nanoporous Silica
      • Spin-on Polymers
      • BCB
      • Flowfill
      • CVD
      • AF4
      • PTEE
    • 요약
      • 프로세싱 관련 과제
      • 통합 관련 과제
    제3장 리소그래피의 과제 및 동향
    • 광학 시스템
    • 나노임프린트 리소그래피(NIL:Nano Imprint Lithography)
    • X선 시스템
    • 전자빔 시스템
    • 이온빔 시스템
    제4장 화학기계적 연마(CMP)의 과제 및 동향
    • 평탄화의 필요성
      • 리소그래피
      • 증착
      • 에칭
    • 용도
      • 유전체
      • 금속
    • 평탄화 기술
      • 국소 평탄화
      • 전면 평탄화
    • CMP
      • 배경
      • 조사 활동
      • 장단점
      • 프로세스 파라미터
      • 디바이스 가공 파라미터
    제5장 공장자동화(FA : Factory Automation)의 과제 및 동향
    • 서론
    • 자동화의 요소
    • 플렉시블 오토메이션
    • 신뢰성
    • 툴 관련 과제 및 동향
    • E-Manufacturing
    제6장 박막 증착의 과제 및 동향
    • 물리기상증착(PVD)
    • 화학기상증착(CVD) 기술
    제7장 플라즈마 에칭의 과제 및 동향
    • 서론
    • 프로세싱 과제
    • 플라즈마 스트립핑
    제8장 약품 및 재료의 과제 및 동향
    • 기술적 과제
    • 순도 요건
    • 약품 관리
    • 기체
    • 스퍼터링 및 증착 재료
    제9장 측정
    • 결함검사/웨이퍼 검사
    • 박막 측정
    • 리소그래피 측정
    제10장 시장 예측
    • 시장 성장 촉진요인
    • 시장 예측 전제조건
    • Low-K
    • 리소그래피
    • CMP
    • FA
    • 박막 증착
    • 플라즈마 에칭
    • 약품 및 재료
    • 측정
    도표
LSH 02.11.22

This report examines and projects the technology of equipment and materials involved in the fabrication of VLSI semiconductor devices, their likely developments, why and when their introduction or demise will take place, what problems and choices are facing users, and where the opportunities and pitfalls are. This report discusses the technology trends, products, applications, and suppliers of chemicals (liquids and gases) and equipment (lithography, plasma etching, and CMP). It also gives insights to suppliers for future user needs and should assist them in long range planning, new product development and product improvement.

Table of Contents

Chapter 1 Introduction

Chapter 2 Low-K Dielectric Issues and Trends

  • 2.1 Introduction
  • 2.2 Ideal Dielectric
  • 2.3 Types of Low-K Dielectrics
    • 2.3.1 FSG
    • 2.3.2 HSQ
    • 2.3.3 Nanoporous Silica
    • 2.3.4 Spin-on Polymers
    • 2.3.5 BCB
    • 2.3.6 Flowfill
    • 2.3.7 CVD
    • 2.3.8 AF4
    • 2.3.9 PTFE
  • 2.4 Summary
    • 2.4.1 Processing Issues
    • 2.4.2 Integration Issues

Chapter 3 Lithography Issues And Trends

  • 3.1 Optical Systems
    • 3.1.1 Introduction
    • 3.1.2 Step-and-Repeat Aligners
    • 3.1.3 Deep Ultraviolet (DUV)
    • 3.2 EUV
    • 3.5 Nano-Imprint Lithography
    • 3.4 X-Ray Lithography
    • 3.3 Electron Beam Lithography
    • 3.4 Ion Beam Lithography

Chapter 4 CMP Issues and Trends

  • 4.1 Need for Planarity
    • 4.1.1 Lithography
    • 4.1.2 Deposition
    • 4.1.3 Etching
  • 4.2 Applications
    • 4.2.1 Dielectrics
    • 4.2.2 Metals
  • 4.3 Planarization Techniques
    • 4.3.1 Local Planarization
      • 4.3.1.1 Deposition-Etchback
      • 4.3.1.2 ECR
      • 4.3.1.3 Oxide Reflow
      • 4.3.1.4 Spin-on-Glass
      • 4.3.1.5 TEOS-Ozone
      • 4.3.1.6 Laser
    • 4.3.2 Global Planarization
      • 4.3.2.1 Polymer
      • 4.3.2.2 Polyimide
      • 4.3.2.3 Isotropic Etch
      • 4.3.2.4 Spin Etch Planarization
      • 4.3.2.5 Electropolishing
  • 4.4 Chemical Mechanical Polishing (CMP)
    • 4.4.1 Background
    • 4.4.2 Research Efforts
    • 4.4.3 Advantages and Disadvantages
    • 4.4.4 Process Parameters
      • 4.4.4.1 STI Planarization
      • 4.4.4.2 Copper CMP
      • 4.4.4.3 Low-K Integration
      • 4.4.4.4 Defect Density
      • 4.4.4.5 Metrology
    • 4.4.5 Device Processing Parameters
      • 4.4.5.1 Memory Devices
      • 4.4.5.2 Logic Devices

Chapter 5 Factory Automation Issues and Trends

  • 5.1 Introduction
  • 5.2 Elements of Automation
    • 5.2.1 Tool Automation
    • 5.2.2 Intrabay Automation
    • 5.2.3 Interbay Automation
    • 5.2.4 Material-Control System
  • 5.3 Flexible Automation
  • 5.4 Reliability
  • 5.5 Tool Issues and Trends
    • 5.5.1 Flexible Tool Interface
    • 5.5.2 Vacuum Robotics
    • 5.5.3 AGV
    • 5.5.4 Robot Control Systems
    • 5.5.5 300-mm Wafer Transport
    • 5.5.6 Mini-Environments and Cleanroom Issues
  • 5.6 E-Manufacturing

Chapter 6 Thin film Deposition Issues and Trends

  • 6.1 Physical Vapor Deposition
    • 6.1.1 Sputtering Technology
    • 6.1.2 Plasma Technology
    • 6.1.3 Reactor Designs
      • 6.1.3.1 Long-Throw Deposition
      • 6.1.3.2 Collimated Sputter Deposition
      • 6.1.3.3 Showerhead Deposition
      • 6.1.3.4 Ionized PVD
    • 6.1.4 Semiconductor Processing
      • 6.1.4.1 Feature Patterning
      • 6.1.4.2 Gap Fill
  • 6.2 Chemical Vapor Deposition (CVD) Techniques
    • 6.2.1 APCVD
    • 6.2.2 LPCVD
    • 6.2.3 PECVD
    • 6.2.4 HDPCVD
    • 6.2.5 ALD
      • 6.2.5.1 Gate Dielectrics
      • 6.2.5.2 Gate Electrodes
      • 6.2.5.3 Metal Interconnects
      • 6.2.5.4 Diffusion Barriers
      • 6.2.5.5 DRAM

Chapter 7 Plasma Etching Issues and Trends

  • 7.1 Introduction
  • 7.2 Processing Issues
    • 7.2.1 Chlorine Versus Fluorine Processes
    • 7.2.2 Multilevel Structures
    • 7.2.3 New Metallization Materials
    • 7.2.4 GaAs Processing
    • 7.3 Plasma Stripping
    • 7.3.1 Photoresist Stripping
    • 7.3.2 Low-K Removal

Chapter 8 Chemicals and Materials Issues and Trends

  • 8.1 Technology Issues
    • 8.1.1 Acids and Solvents
    • 8.1.2 Resists
  • 8.2 Purity Requirements
    • 8.2.1 Purification Methods
      • 8.2.1.1 Trends For Purity - Trace Elements
    • 8.2.2 Particulates
      • 8.2.1.1 Effects on Yield
      • 8.2.1.2 Particulate Removal Techniques
      • 8.2.1.3 Particle Monitoring
  • 8.3 Chemical Management
    • 8.3.1 Introduction
    • 8.3.2 Chemical Usage Reduction
  • 8.4 Gases
    • 8.4.1 Requirements
      • 8.4.1.1 Purification Alternatives
    • 8.4.2 Particulate Considerations
      • 8.4.2.1 Particle Monitoring
      • 8.4.2.2 Filtration Methods
    • 8.4.3 Summary
  • 8.5 Sputtering and Evaporation Materials
    • 8.5.1 Technology Issues
    • 8.5.2 Purity Requirements

Chapter 9 Metrology

  • 9.1 Defect Review/Wafer Inspection
    • 9.1.2 Defect Review
      • 9.1.2.1 SEM Defect Review
      • 9.1.2.2 Optical Defect Review
      • 9.1.2.3 Other Defect Review
    • 9.1.3 Patterned Wafer Inspection
      • 9.1.3.1 E-Beam Patterned Wafer Inspection
      • 9.1.3.2 Optical Patterned Wafer Inspection
    • 9.1.4 Unpatterned Wafer Inspection
    • 9.1.5 Macro-Defect Inspection
  • 9.2 Thin Film Metrology
    • 9.2.1 Metal Thin-Film Metrology
    • 9.2.2 Non-Metal Thin-Film Metrology
    • 9.2.3 Substrate Metrology
  • 9.3 Lithography Metrology
    • 9.3.1 Overlay
    • 9.3.2 CD
    • 9.3.3 Mask (Reticle) Metrology/Inspection

Chapter 10 Market Forecast

  • 10.1 Market Drivers
    • 10.1.1 Semiconductor Market
    • 10.1.2 Technical Trends
    • 10.1.3 Economic Trends
    • 10.1.4 Geographic Trends
      • 10.1.4.1 China
      • 10.1.4.2 Asia
      • 10.1.4.3 Europe
      • 10.1.4.4 Japan
      • 10.1.4.5 United States
  • 10.2 Market Forecast Assumptions
  • 10.3 Low-K Market
  • 10.4 Lithography Market
  • 10.5 CMP Market
    • 10.5.1 CMP Polisher Market
    • 10.5.2 CMP Slurry Market
  • 10.6 Factory Automation Market
  • 10.7 Thin Film Deposition Market
    • 10.7.1 Chemical Vapor Deposition Market
    • 10.7.2 Physical Vapor Deposition Market
  • 10.8 Plasma Etching Market
  • 10.9 Chemical and Materials Market
    • 10.9.1 Forecast by Chemical and Material
    • 10.9.2 Market Shares
  • 10.10 Metrology Market

FIGURES

  • 2.1 Interconnect Delay for Copper/Low-K
  • 3.1 Lithography Options For MPUs/DRAMs
  • 3.2 Lithography Options For Flash
  • 3.3 Illustration of Stepper Exposure System
  • 3.4 Lens Arrangement For Submicron Features
  • 3.5 Excimer Laser Evolution
  • 3.6 EUV Lithography
  • 3.7 Thermoplastic Nanoimprint Lithography Process
  • 3.8 Step And Flash Nanoimprint Lithography Process
  • 3.9 Illustration of X-Ray Lithography
  • 3.10 Schematic Of Scalpel Electron Beam System
  • 3.11 Multi-Source E-Beam Lithography
  • 3.12 Ion Projection Lithography System
  • 4.1 Planarization Lengths of Various Methods
  • 4.2 Normalized Removal Rates
  • 4.3 Reduced Complexity With Copper
  • 4.4 Copper Loss From CMP
  • 4.5 CMP Copper Process Technologies
  • 4.6 CMP Performance Improvements
  • 4.7 Polish Endpoint Control
  • 5.1 Material-Control System
  • 5.2 Traditional and Flexible Automated Material Handling System
  • 5.3 Overhead Monorail Delivery - Cassette in Box, Cassette in SMIF Pod SMIF Pod
  • 5.4 Stocker Design and Interfaces
  • 5.5 Layout Of a 45nm 300mm Fab
  • 5.6 Interfaces To Factory Automation Systems
  • 6.1 Schematic Of Sputtering System
  • 6.2 Magnetron Sputtering Design
  • 6.3 Showerhead Reactor Design
  • 6.4 Ionized PVD
  • 6.5 APCVD Reactor
  • 6.6 Tube CVD Reactor
  • 6.7 HDPCVD Reactor
  • 6.8 ALD Versus PVD Copper Barrier
  • 7.1 Various Enhanced Designs (a) Helicon, (b) Multiple ECR, (c) Helical Resonator
  • 7.2 Schematic of Inductively Coupled Plasma Source
  • 7.3 Schematic of the HRe Source
  • 7.4 Schematic of the Dipole Magnet Source
  • 7.5 Schematic of Chemical Downstream Etch
  • 7.6 Silicon Trench Structure
  • 7.7 Dual Damascene Dielectric Etch Approaches
  • 8.1 Relationship Between Device Yield and Particles
  • 8.2 Relationship Between Die Yield and Chip Size
  • 8.3 Chemical Management Services Tasks
  • 8.4 ITRS Roadmap
  • 8.5 Gate-Last Approach
  • 8.6 Gate-First Approach
  • 9.1 Spectroscopic Ellipsometry Diagram
  • 9.2 ITRS Overlay Technology Roadmap
  • 9.3 Illustration Of 3D Structure
  • 9.4 ITRS Metrology Roadmap
  • 9.5 Illustration Of 3D Structure
  • 10.1 Low-K Deposition Market Shares
  • 10.2 Worldwide Lithography Market Shares
  • 10.3 Semiconductor Equipment Utilization
  • 10.4 Market Shares of Automated Wafer Transfer Suppliers
  • 10.5 Worldwide MCVD Market Shares
  • 10.6 Worldwide DCVD Market Shares
  • 10.7 Worldwide PVD Market Shares
  • 10.8 Worldwide Market Shares for Dry Etch Equipment
  • 10.9 Distribution of Etch Sales by Type
  • 10.10 Worldwide Market Shares of Liquid Chemical Suppliers
  • 10.11 Worldwide Market Shares of Photoresist Suppliers
  • 10.12 Worldwide Market Shares of Silicon Wafer Suppliers
  • 10.13 Worldwide Market Shares of Gas Suppliers
  • 10.14 Total Metrology Market Forecast
  • 10.15 Total Metrology Market Shares

TABLES

  • 2.1 Low-K Material Requirements
  • 2.2 Low-K Materials
  • 3.1 Wavelength "Generations"
  • 3.2 Characteristics of X-Ray Systems
  • 4.1 Levels of Integration of Dynamic Rams
  • 4.2 Interconnect Levels of Logic Device
  • 4.3 Typical Process Specifications
  • 4.4 Organic Polymers for IMD Applications
  • 4.5 CMP Process Variables
  • 4.7 Optimized CMP and Post-CMP Clean Parameters
  • 4.8 Interconnect Materials by Segment
  • 5.1 Evolution Of Factory Metrics
  • 7.1 Silicon Wafer Usage
  • 7.2 Plasma Source Comparison
  • 7.3 Typical Process Specifications
  • 7.4 Dry Resist Stripping Systems
  • 8.1 Common Wafer Processing Chemicals
  • 8.2 Photoresist Stripping Solutions
  • 8.3 Potential Hazards of Processing Gases
  • 9.1 Comparison Of White-Light With Multiple-Angle Laser Ellipsometry
  • 10.1 Worldwide Capital Spending
  • 10.2 Worldwide GDP
  • 10.3 Worldwide Market Forecast Low-K Market
  • 10.4 Worldwide Stepper Market
  • 10.5 Worldwide CMP Polisher Market
  • 10.6 Worldwide CMP Market Shares
  • 10.7 Worldwide CMP Slurry Market
  • 10.8 Worldwide Forecast of Automated Transfer Tools
  • 10.9 Worldwide CVD Market Forecast
  • 10.10 Worldwide PVD Market Forecast
  • 10.11 Worldwide Market Forecast of Plasma Etching Systems
  • 10.12 Worldwide Forecast of Chemicals and Materials
  • 10.13 Total Metrology Market Forecast
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