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SRAM ¹× ROM ¼³°è IP½ÃÀå : À¯Çüº°, Áö¿ªº°(2025-2033³â)SRAM and ROM Design IP Market Report by Type (SRAM (Static Random Access Memory), ROM (Read-Only Memory)), and Region 2025-2033 |
SRAM ¹× ROM ¼³°è IP ½ÃÀå ¼¼°è ½ÃÀå ±Ô¸ð´Â 2024³â 6¾ï 6,510¸¸ ´Þ·¯¿¡ ´ÞÇß½À´Ï´Ù. ÇâÈÄ IMARC GroupÀº 2033³â±îÁö 7¾ï 5,010¸¸ ´Þ·¯¿¡ ´ÞÇÒ °ÍÀ̸ç, 2025-2033³â ¿¬Æò±Õ ¼ºÀå·ü(CAGR)Àº 1.51%¸¦ ±â·ÏÇÒ °ÍÀ¸·Î Àü¸ÁÇϰí ÀÖ½À´Ï´Ù. Áß¼Ò±â¾÷ ¹× ´ë±â¾÷ÀÇ Å¬¶ó¿ìµå ½ºÅ丮Áö ¼Ö·ç¼Ç äÅà Ȯ´ë, ¹ÝµµÃ¼ Á¦Á¶ ±â¼ú ¹ßÀü, ´ë¿ë·® µ¥ÀÌÅ͸¦ ó¸®ÇÏ´Â µ¥ÀÌÅͼ¾ÅÍÀÇ ¼ö¿ä Áõ°¡ µîÀÌ ½ÃÀåÀ» À̲ô´Â ÁÖ¿ä ¿äÀÎÀ¸·Î ²ÅÈü´Ï´Ù.
SRAM(Static Random Access Memory) ¼³°è IP´Â ÀüÀÚ ½Ã½ºÅÛ¿ëÀ¸·Î ¼³°èµÈ ¸Þ¸ð¸® ±â¼úÀÔ´Ï´Ù. Àü¿øÀÌ °ø±ÞµÇ´Â ÇÑ µ¥ÀÌÅ͸¦ À¯ÁöÇÏ´Â Èֹ߼º ¸Þ¸ð¸®·Î, 2°³ÀÇ Å©·Î½ºÄ¿Çõå ÀιöÅ͸¦ ÅëÇØ 4°³ÀÇ Æ®·£Áö½ºÅÍ¿¡ 1ºñÆ® µ¥ÀÌÅ͸¦ ÀúÀåÇÕ´Ï´Ù. °í¼Ó µ¿ÀÛÀÌ °¡´ÉÇϸç, µ¥ÀÌÅÍ ¸®ÇÁ·¹½Ã°¡ ÇÊ¿äÇÏÁö ¾Ê½À´Ï´Ù. ¸¶ÀÌÅ©·ÎÇÁ·Î¼¼¼ µî °í¼Ó ¾ÖÇø®ÄÉÀ̼ÇÀÇ Ä³½Ã ¸Þ¸ð¸®·Î ³Î¸® »ç¿ëµÇ°í ÀÖ½À´Ï´Ù. ¹Ý¸é, ROM(Àбâ Àü¿ë ¸Þ¸ð¸®) ¼³°è IP´Â ¹Ì¸® ÇÁ·Î±×·¡¹ÖµÈ µ¥ÀÌÅ͸¦ ÀúÀåÇÏ´Â ºñÈֹ߼º ¸Þ¸ð¸®·Î, RAM(·£´ý ¾×¼¼½º ¸Þ¸ð¸®)¿¡ ºñÇØ Å×½ºÆ®°¡ ¿ëÀÌÇÏ°í ½Å·Ú¼ºÀÌ ¶Ù¾î³ª¸ç, Àбâ Àü¿ëÀ¸·Î º¯°æÀÌ ºÒ°¡´ÉÇÑ µ¥ÀÌÅÍ¿Í Á¤º¸¸¦ ÀúÀåÇÕ´Ï´Ù. ¶ÇÇÑ, Æß¿þ¾î, ºÎÆ®ÄÚµå, ±âŸ ÀüÀÚ ½Ã½ºÅÛÀÇ °íÁ¤ µ¥ÀÌÅÍ ÀúÀå¿¡µµ ÀÌ¿ëµË´Ï´Ù.
ÇöÀç Àü ¼¼°è Áß¼Ò±â¾÷ ¹× ´ë±â¾÷ÀÇ Å¬¶ó¿ìµå ½ºÅ丮Áö ¼Ö·ç¼Ç äÅÃÀÌ Áõ°¡Çϰí ÀÖ´Â °ÍÀº ½ÃÀå ¼ºÀåÀ» ÃËÁøÇÏ´Â Áß¿äÇÑ ¿äÀÎ Áß ÇϳªÀÔ´Ï´Ù. ¿©±â¿¡ »ç¹°ÀÎÅͳÝ(IoT) ±â±â »ç¿ë Áõ°¡·Î ÀÎÇÑ È¿À²ÀûÀÎ ÀúÀå ¹× Ã³¸®¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡°¡ ½ÃÀå¿¡ ±àÁ¤ÀûÀÎ ¿µÇâÀ» ¹ÌÄ¡°í ÀÖ½À´Ï´Ù. ¶ÇÇÑ, ÀúÀü·Â ¼Òºñ ¹× °í¹Ðµµ ½ºÅ丮Áö ¼Ö·ç¼ÇÀÇ Ã¤ÅÃÀÌ Áõ°¡Çϰí ÀÖ´Â °Íµµ ½ÃÀå ¼ºÀåÀ» ÃËÁøÇϰí ÀÖ½À´Ï´Ù. À̿ʹ º°µµ·Î ´ë·®ÀÇ µ¥ÀÌÅ͸¦ ¿øÈ°ÇÏ°Ô Ã³¸®Çϱâ À§ÇÑ µ¥ÀÌÅͼ¾ÅÍÀÇ ¼ö¿ä Áõ°¡°¡ ½ÃÀå ¼ºÀåÀ» ÃËÁøÇϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ, ¼º´É Çâ»ó°ú Àü·Â ¼Òºñ °¨¼Ò¸¦ À§ÇÑ ³ëµå Å©±âÀÇ ¼ÒÇüÈ ¹× Çõ½ÅÀûÀÎ ¸Þ¸ð¸® ¾ÆÅ°ÅØÃ³¿Í °°Àº ¹ÝµµÃ¼ Á¦Á¶ÀÇ ±â¼ú ¹ßÀüµµ ½ÃÀå ¼ºÀå¿¡ ±â¿©Çϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ, °í¼º´É ¸Þ¸ð¸® ¼Ö·ç¼Ç¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡¿¡ µû¶ó SRAM ¹× ROM ¼³°è IPÀÇ Ã¤ÅÃÀÌ Áõ°¡Çϰí ÀÖ´Â Á¡µµ ½ÃÀå Àü¸ÁÀ» ¹à°Ô Çϰí ÀÖ½À´Ï´Ù. ÀÌ¿¡ µû¶ó DRAM(Dynamic Random Access Memory)º¸´Ù ºü¸¥ SRAMÀÇ Ã¤ÅÃÀÌ Áõ°¡ÇÏ¸é¼ ½ÃÀå ¼ºÀåÀ» °ßÀÎÇϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ, ÷´Ü ¹«¼± ³×Æ®¿öÅ©ÀÇ µµÀÔÀ¸·Î ÀÎÇÑ SRAM ¹× ROM ¼³°è IP¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡´Â ¾÷°è ÅõÀÚÀڵ鿡°Ô À¯¸®ÇÑ ¼ºÀå ±âȸ¸¦ Á¦°øÇϰí ÀÖ½À´Ï´Ù.
The global SRAM and ROM design IP market size reached USD 665.1 Million in 2024. Looking forward, IMARC Group expects the market to reach USD 750.1 Million by 2033, exhibiting a growth rate (CAGR) of 1.51% during 2025-2033. The growing adoption of cloud storage solutions among small and large-scale enterprises, technological advancements in semiconductor manufacturing, and rising demand in data centers to handle huge data represent some of the key factors driving the market.
Static random-access memory (SRAM) design intellectual property (IP) is a memory technology that is designed for electronic systems. It is a volatile memory that stores data as long as power is supplied. It stores a bit of data on four transistors through two cross-coupled inverters. It can be operated at a higher speed and does not require data to be refreshed. It is widely utilized as cache memory in microprocessors and other high-speed applications. On the other hand, read-only memory (ROM) design IP is a non-volatile memory that contains pre-programmed data. It is easy to test and offers more reliability as compared to random access memory (RAM). It stores data and information that can only be read and cannot be modified. Besides this, it is utilized for storing firmware, boot code, and other fixed data in electronic systems.
At present, the increasing adoption of cloud storage solutions among small and large-scale enterprises across the globe represents one of the key factors impelling the growth of the market. Besides this, the growing demand for efficient storage and processing due to the increasing utilization of the Internet of Things (IoT) devices is positively influencing the market. Additionally, the rising adoption of low-power and high-density storage solutions is bolstering the growth of the market. Apart from this, the increasing demand in data centers to handle a large amount of data smoothly is propelling the growth of the market. In addition, technological advancements in semiconductor manufacturing, such as smaller node sizes and innovative memory architectures, to provide enhanced performance and reduce power consumption is contributing to the growth of the market. Moreover, the growing adoption of SRAM and ROM design IP on account of the increasing demand for high-performance memory solutions is offering a favorable market outlook. In line with this, the rising employment of SRAM, as it is faster than dynamic random-access memory (DRAM), is supporting the growth of the market. Furthermore, the increasing demand for SRAM and ROM design IP due to the introduction of advanced wireless networks is offering lucrative growth opportunities to industry investors.
Kindly note that this only represents a partial list of companies, and the complete list has been provided in the report.