½ÃÀ庸°í¼­
»óǰÄÚµå
1702052

ÀÚ±âÀúÇ× RAM(MRAM) ½ÃÀå º¸°í¼­ : À¯Çüº°, Á¦°øº°, ¿ëµµº°, Áö¿ªº°(2025-2033³â)

Magneto Resistive RAM Market Report by Type (Toggle MRAM, Spin-Transfer Torque MRAM ), Offering, Application, and Region 2025-2033

¹ßÇàÀÏ: | ¸®¼­Ä¡»ç: IMARC | ÆäÀÌÁö Á¤º¸: ¿µ¹® 144 Pages | ¹è¼Û¾È³» : 2-3ÀÏ (¿µ¾÷ÀÏ ±âÁØ)

    
    
    




¡Ø º» »óǰÀº ¿µ¹® ÀÚ·á·Î Çѱ۰ú ¿µ¹® ¸ñÂ÷¿¡ ºÒÀÏÄ¡ÇÏ´Â ³»¿ëÀÌ ÀÖÀ» °æ¿ì ¿µ¹®À» ¿ì¼±ÇÕ´Ï´Ù. Á¤È®ÇÑ °ËÅ並 À§ÇØ ¿µ¹® ¸ñÂ÷¸¦ Âü°íÇØÁֽñ⠹ٶø´Ï´Ù.

ÀÚ±âÀúÇ× RAM(MRAM) ¼¼°è ½ÃÀå ±Ô¸ð´Â 2024³â 8¾ï 4,600¸¸ ´Þ·¯¿¡ ´ÞÇß½À´Ï´Ù. ÇâÈÄ IMARC GroupÀº 2033³â±îÁö 134¾ï 7,400¸¸ ´Þ·¯¿¡ ´ÞÇϰí, 2025-2033³â 36%ÀÇ ¿¬Æò±Õ ¼ºÀå·ü(CAGR)À» º¸ÀÏ °ÍÀ¸·Î Àü¸ÁÇϰí ÀÖ½À´Ï´Ù. ÀÌ ½ÃÀåÀº °í¼Ó¼º, ¿¡³ÊÁö È¿À²¼º, ºñÈֹ߼º, ±â¼ú ¹ßÀü, ¿¬±¸°³¹ß(R&D) ÅõÀÚ Áõ°¡, »ç¹°ÀÎÅͳÝ(IoT) ¹× ÀΰøÁö´É(AI)¿¡¼­ÀÇ ¿ëµµ È®´ë µîÀÌ ÁÖ¿äÇÑ µ¿ÀÎÀ¸·Î ÀÛ¿ëÇϰí ÀÖ½À´Ï´Ù.

ÀÚ±âÀúÇ× ·£´ý ¾×¼¼½º ¸Þ¸ð¸®(MRAM) ¶Ç´Â ÀÚ±â RAMÀº ÀüÇϸ¦ »ç¿ëÇÏ¿© Á¤º¸¸¦ ÀúÀåÇÏ´Â ºñÈֹ߼º ¸Þ¸ð¸®ÀÔ´Ï´Ù. ½ºÇÉ Àü¼Û ÅäÅ© MRAM°ú Åä±Û MRAMÀº ÀϹÝÀûÀ¸·Î »ç¿ë °¡´ÉÇÑ À¯Çü Áß ÀϺÎÀÔ´Ï´Ù. À̵éÀº À¯Àüü ¶Ç´Â Àý¿¬ÃþÀ» ÅëÇØ ºÐ¸®µÈ µÎ °³ÀÇ ÀÚ¼ºÃþÀ¸·Î ±¸¼ºµÈ ÀÚ±â ÅͳΠÁ¢ÇÕ(MTJ)À» ÀÌ¿ëÇÕ´Ï´Ù. ÀÌ´Â °í¹Ðµµ RAMÀ̸ç, Ä¿ÆÐ½ÃÅÍ¿Í Æ®·£Áö½ºÅ͸¦ Æ÷ÇÔÇÕ´Ï´Ù. ±âÁ¸ÀÇ µ¿Àû ·£´ý ¾×¼¼½º ¸Þ¸ð¸®(DRAM)¿¡ ºñÇØ MRAMÀº Àü¿ø ¾øÀ̵µ ¸Þ¸ð¸®¿¡ ÀúÀåµÈ Á¤º¸¸¦ À¯ÁöÇÒ ¼ö ÀÖ°í, ºñ¿ë È¿À²ÀûÀ̸ç, Å« ¿¡³ÊÁö¸¦ ¼ÒºñÇÏ´Â ÆÞ½º¸¦ ÇÊ¿ä·Î ÇÏÁö ¾Ê¾Æ ºñ¿ë È¿À²ÀûÀÔ´Ï´Ù. ±× °á°ú, ·Îº¿°øÇÐ, ÀÚµ¿Â÷, °¡ÀüÁ¦Ç°, ±â¾÷¿ë ½ºÅ丮Áö ½Ã½ºÅÛ µî¿¡ ³Î¸® Ȱ¿ëµÇ°í ÀÖ½À´Ï´Ù.

ÀÚ±âÀúÇ× RAM(MRAM) ½ÃÀå µ¿Çâ :

¹Î¼ö¿ë ÀüÀÚÁ¦Ç° »ê¾÷ÀÇ °ý¸ñÇÒ¸¸ÇÑ ¼ºÀåÀº ½ÃÀå Àü¸ÁÀ» ¹à°Ô ÇÏ´Â Áß¿äÇÑ ¿äÀÎ Áß ÇϳªÀ̸ç, MRAMÀº ¿öÅ©½ºÅ×À̼Ç, ½º¸¶Æ® ¿þ¾î·¯ºí, ½º¸¶Æ®Æù, µðÁöÅÐ Ä«¸Þ¶ó µî ´Ù¾çÇÑ ÀüÀÚ±â±â¿¡ ³Î¸® »ç¿ëµÇ°í ÀÖ½À´Ï´Ù. ¶ÇÇÑ, °í¿Â µ¥ÀÌÅÍ ÀúÀå¿¡ ´ëÇÑ Ç×°ø¿ìÁÖ ¹× ¹æÀ§»ê¾÷ ºÐ¾ßÀÇ Á¦Ç° ¼ö¿ä Áõ°¡°¡ ½ÃÀå ¼ºÀåÀ» °ßÀÎÇϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ, ³»¹æ»ç¼± ¸¶ÀÌÅ©·ÎĨ¿ë ÀúÀü·Â ¼Òºñ MRAMÀÇ °³¹ß°ú °°Àº ´Ù¾çÇÑ Á¦Ç° Çõ½ÅÀÌ ½ÃÀå ¼ºÀåÀ» °¡¼ÓÇϰí ÀÖ½À´Ï´Ù. ÀÌ Á¦Ç°µéÀº Àü·Â È¿À²ÀÌ ³ô°í, ¹æ»ç¼±¿¡ °­Çϸç, ¿Âµµ º¯È­¿¡¼­µµ ÀÛµ¿ÇÒ ¼ö ÀÖ½À´Ï´Ù. ÀÌ¿¡ µû¶ó »ç¹°ÀÎÅͳÝ(IoT) Áö¿ø ±â±â¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡¿Í ÷´Ü ¼¾¼­ ¹× ½º¸¶Æ® ·Îº¿ÀÇ º¸±ÞÀÌ ½ÃÀå ¼ºÀå¿¡ ±àÁ¤ÀûÀÎ ¿µÇâÀ» ¹ÌÄ¡°í ÀÖ½À´Ï´Ù. ±âŸ ¼ÒÇüÈ­ ¹× ¸ÂÃãÇü ÁýÀûȸ·Î(IC)ÀÇ Á¦Ç° Ȱ¿ë Áõ°¡, ´Ù¾çÇÑ ÀÇ·á ÁúȯÀÇ ºñħ½ÀÀû Áø´Ü °Ë»ç¸¦ À§ÇÑ MRAM ³»ÀåÇü ÀÇ·á¿ë ¼¾¼­ÀÇ ±¤¹üÀ§ÇÑ Ã¤Åà µîÀÌ ½ÃÀå ¼ºÀåÀÇ ¿øµ¿·ÂÀÌ µÉ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù.

º» º¸°í¼­¿¡¼­ ´Ù·é ÁÖ¿ä Áú¹®

  • 2024³â ÀÚ±âÀúÇ× RAM(MRAM) ¼¼°è ½ÃÀå ±Ô¸ð´Â?
  • 2025-2033³â ÀÚ±âÀúÇ× RAM(MRAM) ¼¼°è ½ÃÀå ¼ºÀå·ü Àü¸ÁÀº?
  • ÀÚ±âÀúÇ× RAM(MRAM) ¼¼°è ½ÃÀåÀ» À̲ô´Â ÁÖ¿ä ¿äÀÎÀº?
  • Äڷγª19°¡ ÀÚ±âÀúÇ× RAM(MRAM) ¼¼°è ½ÃÀå¿¡ ¹ÌÄ¡´Â ¿µÇâÀº?
  • ÀÚ±âÀúÇ× RAM(MRAM) ¼¼°è ½ÃÀå À¯Çüº° ºÐ·ù´Â?
  • ÀÚ±âÀúÇ× RAM(MRAM) ¼¼°è ½ÃÀå Á¦°ø Çüź° ±¸ºÐÀº?
  • ÀÚ±âÀúÇ× RAM(MRAM) ¼¼°è ½ÃÀå ¿ëµµ¿¡ µû¸¥ ºÐ·ù´Â?
  • ÀÚ±âÀúÇ× RAM(MRAM) ¼¼°è ½ÃÀåÀÇ ÁÖ¿ä Áö¿ªÀº?
  • ÀÚ±âÀúÇ× RAM(MRAM) ¼¼°è ½ÃÀåÀÇ ÁÖ¿ä ±â¾÷Àº?

¸ñÂ÷

Á¦1Àå ¼­¹®

Á¦2Àå Á¶»ç ¹üÀ§¿Í Á¶»ç ¹æ¹ý

  • Á¶»ç ¸ñÀû
  • ÀÌÇØ°ü°èÀÚ
  • µ¥ÀÌÅÍ ¼Ò½º
    • 1Â÷ Á¤º¸
    • 2Â÷ Á¤º¸
  • ½ÃÀå ÃßÁ¤
    • º¸ÅÒ¾÷ Á¢±Ù
    • Åé´Ù¿î Á¢±Ù
  • Á¶»ç ¹æ¹ý

Á¦3Àå ÁÖ¿ä ¿ä¾à

Á¦4Àå ¼­·Ð

  • °³¿ä
  • ÁÖ¿ä ¾÷°è µ¿Çâ

Á¦5Àå ¼¼°èÀÇ ÀÚ±âÀúÇ× RAM(MRAM) ½ÃÀå

  • ½ÃÀå °³¿ä
  • ½ÃÀå ½ÇÀû
  • COVID-19ÀÇ ¿µÇâ
  • ½ÃÀå ¿¹Ãø

Á¦6Àå ½ÃÀå ºÐ¼® : À¯Çüº°

  • Toggle MRAM
  • Spin-Transfer Torque MRAM (STT-MRAM)

Á¦7Àå ½ÃÀå ºÐ¼® : Á¦°øº°

  • ½ºÅĵå¾ó·Ð
  • ÀÓº£µðµå

Á¦8Àå ½ÃÀå ºÐ¼® : ¿ëµµº°

  • °¡Àü
  • ·Îº¿ °øÇÐ
  • ±â¾÷ ½ºÅ丮Áö
  • ÀÚµ¿Â÷
  • Ç×°ø¿ìÁÖ ¹× ¹æÀ§
  • ±âŸ

Á¦9Àå ½ÃÀå ºÐ¼® : Áö¿ªº°

  • ºÏ¹Ì
    • ¹Ì±¹
    • ij³ª´Ù
  • ¾Æ½Ã¾ÆÅÂÆò¾ç
    • Áß±¹
    • ÀϺ»
    • Àεµ
    • Çѱ¹
    • È£ÁÖ
    • Àεµ³×½Ã¾Æ
    • ±âŸ
  • À¯·´
    • µ¶ÀÏ
    • ÇÁ¶û½º
    • ¿µ±¹
    • ÀÌÅ»¸®¾Æ
    • ½ºÆäÀÎ
    • ·¯½Ã¾Æ
    • ±âŸ
  • ¶óƾ¾Æ¸Þ¸®Ä«
    • ºê¶óÁú
    • ¸ß½ÃÄÚ
    • ±âŸ
  • Áßµ¿ ¹× ¾ÆÇÁ¸®Ä«
    • ½ÃÀå ³»¿ª : ±¹°¡º°

Á¦10Àå SWOT ºÐ¼®

  • °³¿ä
  • °­Á¡
  • ¾àÁ¡
  • ±âȸ
  • À§Çù

Á¦11Àå ¹ë·ùüÀÎ ºÐ¼®

Á¦12Àå PorterÀÇ Five Forces ºÐ¼®

  • °³¿ä
  • ¹ÙÀ̾îÀÇ ±³¼··Â
  • °ø±Þ ±â¾÷ÀÇ ±³¼··Â
  • °æÀï Á¤µµ
  • ½Å±Ô ÁøÃâ¾÷üÀÇ À§Çù
  • ´ëüǰÀÇ À§Çù

Á¦13Àå °¡°Ý ºÐ¼®

Á¦14Àå °æÀï ±¸µµ

  • ½ÃÀå ±¸Á¶
  • ÁÖ¿ä ±â¾÷
  • ÁÖ¿ä ±â¾÷ °³¿ä
    • Avalanche Technology Inc.
    • Crocus Nano Electronics LLC
    • Everspin Technologies Inc.
    • Honeywell International Inc.
    • Infineon Technologies AG
    • Intel Corporation
    • NVE Corporation
    • Qualcomm Incorporated
    • Samsung Electronics Co. Ltd.
    • Spin Memory Inc.
    • Toshiba Corporation
    • Tower Semiconductor Ltd.
LSH 25.05.27

The global magneto resistive RAM (MRAM) market size reached USD 846 Million in 2024. Looking forward, IMARC Group expects the market to reach USD 13,474 Million by 2033, exhibiting a growth rate (CAGR) of 36% during 2025-2033. The market is expanding rapidly, driven by its high speed, energy efficiency, and non-volatility, with key trends including technological advancements, increased research and development (R&D) investments, and expanding applications in the Internet of Things (IoT) and artificial intelligence (AI).

Magneto resistive random access memory (MRAM), or magnetic RAM, is a non-volatile memory that uses magnetic charges to store information. Spin-transfer torque and toggle MRAM are some of the commonly available variants. They utilize magnetic tunnel junction (MTJ) that comprises two magnetic layers separated through a dielectric or insulation layer. It is a high-density RAM and it includes a capacitor and a transistor. In comparison to the traditionally used dynamic random-access memory (DRAM), MRAM can retain the information stored in the memory without a power source, is more cost-effective and does not require a large energy-consuming pulse. As a result, it is widely used in robotics, automobiles, consumer electronics and enterprise storage systems.

Magneto Resistive RAM (MRAM) Market Trends:

Significant growth in the consumer electronics industry is one of the key factors creating a positive outlook for the market. MRAM is widely used in various electronic gadgets, such as workstations, smart wearables, smartphones and digital cameras. Additionally, the increasing product demand in the aerospace and defense industries for high-temperature data storage is favoring the market growth. Moreover, various product innovations, such as the development of low-power MRAM variants for radiation-hardened microchips, are providing thrust to the market growth. They are power-efficient, resistant to radiations and can operate under temperature fluctuations. In line with this, the increasing demand for Internet of Things (IoT)-enabled devices and the widespread utilization of advanced sensors and smart robots are positively impacting the market growth. Other factors, including the increasing product utilization in miniaturized and customized integrated circuits (ICs), along with the widespread adoption of MRAM-embedded medical sensors for non-invasive diagnostic testing of medical various disorder, are anticipated to drive the market toward growth.

Key Market Segmentation:

Breakup by Type:

  • Toggle MRAM
  • Spin-Transfer Torque MRAM (STT-MRAM)

Breakup by Offering:

  • Stand-alone
  • Embedded

Breakup by Application:

  • Consumer Electronics
  • Robotics
  • Enterprise Storage
  • Automotive
  • Aerospace and Defense
  • Others

Breakup by Region:

  • North America
  • United States
  • Canada
  • Asia-Pacific
  • China
  • Japan
  • India
  • South Korea
  • Australia
  • Indonesia
  • Others
  • Europe
  • Germany
  • France
  • United Kingdom
  • Italy
  • Spain
  • Russia
  • Others
  • Latin America
  • Brazil
  • Mexico
  • Others
  • Middle East and Africa

Competitive Landscape:

The competitive landscape of the industry has also been examined along with the profiles of the key players being Avalanche Technology Inc., Crocus Nano Electronics LLC, Everspin Technologies Inc., Honeywell International Inc., Infineon Technologies AG, Intel Corporation, NVE Corporation, Qualcomm Incorporated, Samsung Electronics Co. Ltd., Spin Memory Inc., Toshiba Corporation and Tower Semiconductor Ltd.

Key Questions Answered in This Report

  • 1.What was the size of the global magneto resistive RAM (MRAM) market in 2024?
  • 2.What is the expected growth rate of the global magneto resistive RAM (MRAM) market during 2025-2033?
  • 3.What are the key factors driving the global magneto resistive RAM (MRAM) market?
  • 4.What has been the impact of COVID-19 on the global magneto resistive RAM (MRAM) market?
  • 5.What is the breakup of the global magneto resistive RAM (MRAM) market based on the type?
  • 6.What is the breakup of the global magneto resistive RAM (MRAM) market based on the offering?
  • 7.What is the breakup of the global magneto resistive RAM (MRAM) market based on the application?
  • 8.What are the key regions in the global magneto resistive RAM (MRAM) market?
  • 9.Who are the key players/companies in the global magneto resistive RAM (MRAM) market?

Table of Contents

1 Preface

2 Scope and Methodology

  • 2.1 Objectives of the Study
  • 2.2 Stakeholders
  • 2.3 Data Sources
    • 2.3.1 Primary Sources
    • 2.3.2 Secondary Sources
  • 2.4 Market Estimation
    • 2.4.1 Bottom-Up Approach
    • 2.4.2 Top-Down Approach
  • 2.5 Forecasting Methodology

3 Executive Summary

4 Introduction

  • 4.1 Overview
  • 4.2 Key Industry Trends

5 Global Magneto Resistive RAM (MRAM) Market

  • 5.1 Market Overview
  • 5.2 Market Performance
  • 5.3 Impact of COVID-19
  • 5.4 Market Forecast

6 Market Breakup by Type

  • 6.1 Toggle MRAM
    • 6.1.1 Market Trends
    • 6.1.2 Market Forecast
  • 6.2 Spin-Transfer Torque MRAM (STT-MRAM)
    • 6.2.1 Market Trends
    • 6.2.2 Market Forecast

7 Market Breakup by Offering

  • 7.1 Stand-alone
    • 7.1.1 Market Trends
    • 7.1.2 Market Forecast
  • 7.2 Embedded
    • 7.2.1 Market Trends
    • 7.2.2 Market Forecast

8 Market Breakup by Application

  • 8.1 Consumer Electronics
    • 8.1.1 Market Trends
    • 8.1.2 Market Forecast
  • 8.2 Robotics
    • 8.2.1 Market Trends
    • 8.2.2 Market Forecast
  • 8.3 Enterprise Storage
    • 8.3.1 Market Trends
    • 8.3.2 Market Forecast
  • 8.4 Automotive
    • 8.4.1 Market Trends
    • 8.4.2 Market Forecast
  • 8.5 Aerospace and Defense
    • 8.5.1 Market Trends
    • 8.5.2 Market Forecast
  • 8.6 Others
    • 8.6.1 Market Trends
    • 8.6.2 Market Forecast

9 Market Breakup by Region

  • 9.1 North America
    • 9.1.1 United States
      • 9.1.1.1 Market Trends
      • 9.1.1.2 Market Forecast
    • 9.1.2 Canada
      • 9.1.2.1 Market Trends
      • 9.1.2.2 Market Forecast
  • 9.2 Asia-Pacific
    • 9.2.1 China
      • 9.2.1.1 Market Trends
      • 9.2.1.2 Market Forecast
    • 9.2.2 Japan
      • 9.2.2.1 Market Trends
      • 9.2.2.2 Market Forecast
    • 9.2.3 India
      • 9.2.3.1 Market Trends
      • 9.2.3.2 Market Forecast
    • 9.2.4 South Korea
      • 9.2.4.1 Market Trends
      • 9.2.4.2 Market Forecast
    • 9.2.5 Australia
      • 9.2.5.1 Market Trends
      • 9.2.5.2 Market Forecast
    • 9.2.6 Indonesia
      • 9.2.6.1 Market Trends
      • 9.2.6.2 Market Forecast
    • 9.2.7 Others
      • 9.2.7.1 Market Trends
      • 9.2.7.2 Market Forecast
  • 9.3 Europe
    • 9.3.1 Germany
      • 9.3.1.1 Market Trends
      • 9.3.1.2 Market Forecast
    • 9.3.2 France
      • 9.3.2.1 Market Trends
      • 9.3.2.2 Market Forecast
    • 9.3.3 United Kingdom
      • 9.3.3.1 Market Trends
      • 9.3.3.2 Market Forecast
    • 9.3.4 Italy
      • 9.3.4.1 Market Trends
      • 9.3.4.2 Market Forecast
    • 9.3.5 Spain
      • 9.3.5.1 Market Trends
      • 9.3.5.2 Market Forecast
    • 9.3.6 Russia
      • 9.3.6.1 Market Trends
      • 9.3.6.2 Market Forecast
    • 9.3.7 Others
      • 9.3.7.1 Market Trends
      • 9.3.7.2 Market Forecast
  • 9.4 Latin America
    • 9.4.1 Brazil
      • 9.4.1.1 Market Trends
      • 9.4.1.2 Market Forecast
    • 9.4.2 Mexico
      • 9.4.2.1 Market Trends
      • 9.4.2.2 Market Forecast
    • 9.4.3 Others
      • 9.4.3.1 Market Trends
      • 9.4.3.2 Market Forecast
  • 9.5 Middle East and Africa
    • 9.5.1 Market Trends
    • 9.5.2 Market Breakup by Country
    • 9.5.3 Market Forecast

10 SWOT Analysis

  • 10.1 Overview
  • 10.2 Strengths
  • 10.3 Weaknesses
  • 10.4 Opportunities
  • 10.5 Threats

11 Value Chain Analysis

12 Porters Five Forces Analysis

  • 12.1 Overview
  • 12.2 Bargaining Power of Buyers
  • 12.3 Bargaining Power of Suppliers
  • 12.4 Degree of Competition
  • 12.5 Threat of New Entrants
  • 12.6 Threat of Substitutes

13 Price Analysis

14 Competitive Landscape

  • 14.1 Market Structure
  • 14.2 Key Players
  • 14.3 Profiles of Key Players
    • 14.3.1 Avalanche Technology Inc.
      • 14.3.1.1 Company Overview
      • 14.3.1.2 Product Portfolio
    • 14.3.2 Crocus Nano Electronics LLC
      • 14.3.2.1 Company Overview
      • 14.3.2.2 Product Portfolio
    • 14.3.3 Everspin Technologies Inc.
      • 14.3.3.1 Company Overview
      • 14.3.3.2 Product Portfolio
      • 14.3.3.3 Financials
    • 14.3.4 Honeywell International Inc.
      • 14.3.4.1 Company Overview
      • 14.3.4.2 Product Portfolio
      • 14.3.4.3 Financials
      • 14.3.4.4 SWOT Analysis
    • 14.3.5 Infineon Technologies AG
      • 14.3.5.1 Company Overview
      • 14.3.5.2 Product Portfolio
      • 14.3.5.3 Financials
      • 14.3.5.4 SWOT Analysis
    • 14.3.6 Intel Corporation
      • 14.3.6.1 Company Overview
      • 14.3.6.2 Product Portfolio
      • 14.3.6.3 Financials
      • 14.3.6.4 SWOT Analysis
    • 14.3.7 NVE Corporation
      • 14.3.7.1 Company Overview
      • 14.3.7.2 Product Portfolio
      • 14.3.7.3 Financials
    • 14.3.8 Qualcomm Incorporated
      • 14.3.8.1 Company Overview
      • 14.3.8.2 Product Portfolio
      • 14.3.8.3 Financials
      • 14.3.8.4 SWOT Analysis
    • 14.3.9 Samsung Electronics Co. Ltd.
      • 14.3.9.1 Company Overview
      • 14.3.9.2 Product Portfolio
      • 14.3.9.3 Financials
      • 14.3.9.4 SWOT Analysis
    • 14.3.10 Spin Memory Inc.
      • 14.3.10.1 Company Overview
      • 14.3.10.2 Product Portfolio
    • 14.3.11 Toshiba Corporation
      • 14.3.11.1 Company Overview
      • 14.3.11.2 Product Portfolio
      • 14.3.11.3 Financials
      • 14.3.11.4 SWOT Analysis
    • 14.3.12 Tower Semiconductor Ltd.
      • 14.3.12.1 Company Overview
      • 14.3.12.2 Product Portfolio
      • 14.3.12.3 Financials
»ùÇà ¿äû ¸ñ·Ï
0 °ÇÀÇ »óǰÀ» ¼±Åà Áß
¸ñ·Ï º¸±â
Àüü»èÁ¦