GaN 파워 디바이스 시장 보고서 : 디바이스 유형별, 전압 범위별, 용도별, 최종 용도 산업별, 지역별(2025-2033년)

The global GaN power device market size reached USD 451.0 Million in 2024. Looking forward, IMARC Group expects the market to reach USD 4,706.2 Million by 2033, exhibiting a growth rate (CAGR) of 28.28% during 2025-2033. The market is rapidly expanding, driven by the growing demand for energy efficiency, recent advancements in electric vehicle (EV) market, rising innovations in the semiconductor industry, widespread adoption of renewable energy technology, and the ongoing miniaturization of electronics.

GaN Power Device Market Trends:

Increasing Demand for Energy Efficiency

The sudden shift towards energy efficiency is a major factor driving the gallium nitride (GaN) power devices market growth. They are known for their ability to operate at higher voltages, frequencies, and temperatures than silicon-based counterparts, leading to more efficient power conversion. For instance, Efficient Power Conversion (EPC) launched EPC9137, a scalable 1.5 kW, two-phase 48 V - 12 V demonstration board powered by gallium nitride (GaN) FETs. The design of this demonstration board is scalable as two converters can be paralleled to achieve 3 kW, or three converters can be paralleled to achieve 4.5 kW. By 2025, one of every ten vehicles sold across the globe is projected to be a 48 V mild hybrid. These hybrid systems boost fuel efficiency, deliver four times the power, and reduce carbon dioxide emissions, requiring a 48V - 12V bidirectional converter, with power ranging from 1.5 kW to 6 kW. EPC eGaN FETs can operate with 97% efficiency at 250 kHz switching frequency, enabling 800 W/phase compared to silicon-based solutions, which are limited to 600 W/phase due to the limitation on the inductor current at 100 kHz maximum switching frequency. This trend is supported by governmental regulations and policies aimed at reducing energy consumption and carbon footprints, further propelling the market for GaN power devices.

Growth in the Electric Vehicle (EV) Market

The booming EV market is a significant catalyst for the growth of GaN power devices. These devices are critical in EVs for applications such as onboard chargers, DC/DC converters, and power inverters. GaN's superior efficiency and high-power density is ideal for EVs, contributing to lighter, smaller, and more reliable systems. For instance, IQE plc, in a strategic collaboration with GaN company VisIC, developed high-reliability GaN D-Mode (D-Mode GaN) power products for use in EV inverters. They developed 200mm D-Mode GaN power epiwafers for longer ranges and faster charging times for EVs, addressing two of the most significant challenges in electric vehicle adoption. Moreover, EPC announced the development of the EPC9194 GaN-based inverter reference design that enhances motor drive system efficiency, range, and torque while doubling the power per weight. It operates from an input supply voltage range of 14 V to 60 V and delivers up to 60 Apk (40 ARMS) output current. This voltage range and power level make the solution ideal for a variety of 3-Phase BLDC motor drives, including eBikes, eScooters, drones, robots, and DC servo motors.

Advancements in Semiconductor Technology

Continuous improvements and breakthroughs in semiconductor materials and manufacturing processes have significantly reduced the cost and improved the performance of GaN power devices. For instance, MACOM Technology Solutions Inc. ("MACOM"), a leading supplier of semiconductor solutions, developed a new gallium nitride on silicon carbide (GaN-on-SiC) power amplifier product line, along with the introduction of the first two new products, the MAPC-A1000 and the MAPC-A1100. The MAPC-A1000 is a high-power GaN-on-SiC amplifier designed to operate between 30 MHz and 2.7 GHz. It integrates an input match, which simplifies the customer's design-in effort. It can also deliver more than 25 W (44dBm) at greater than 50% efficiency from 500 MHz to 2.7 GHz when tested in a circuit designed for operation over 2.2 GHz simultaneous bandwidth. Along with this, the MAPC-A1100 is a high-power GaN-on-SiC amplifier that is designed to operate up to 3.5 GHz. The device is capable of supporting CW and pulsed operations with output power levels of at least 65 W (48.1dBm) in an air cavity ceramic package. These advancements are expected to bolster the market growth over the forecasted period.

GaN Power Device Market Segmentation:

Breakup by Device Type:

• Power Device
  • Discrete Power Device
  • Integrated Power Device
• RF Power Device
  • Discrete RF Power Device
  • Integrated RF Power Device

According to the GaN power device market analysis, the power device sector specializes in dealing with applications that demand efficient power conversion and management. It involves power supply, inverters, and converters for industries, such as renewable energy, automotive, industrial, and consumer electronics. GaN power devices are praised for their efficiency, excellent thermal conductivity, and ability to operate at greater frequencies and temperatures.

In accordance with the GaN power device market segmentation, radio frequency (RF) power devices are used for applications that demand the generation and management of high-frequency signals. It is required in telecommunications devices, like cellular base stations, satellite communications, and radar systems, including those used in military and defense applications. GaN RF power devices are renowned for their great power density, efficiency, and reliability at high frequencies.

Breakup by Voltage Range:

• <200 Volt
• 200-600 Volt
• >600 Volt

According to the GaN power device market statistics, the <200-volt category emphasizes low to medium-power applications in consumer electronics, mobile devices, and automotive subsystems. It is suitable for providing quick charging for cellphones, laptops, and other portable devices. Their higher efficiency and thermal performance allow for lighter, compact, and more energy-efficient power adapters and converters, making them increasingly popular in the consumer electronics sector.

In accordance with the GaN power device market analysis, the 200-600 volt GaN power device covers a wide range of applications, including electric vehicles (EVs), renewable energy systems, and industrial power supply. It is used in EV onboard chargers, DC/DC converters, and solar inverters to increase efficiency, reduce size, and regulate heat, thereby boosting the GaN power device market recent developments.

According to the GaN power device market overview, the >600-volt category is widely utilized for high-power applications, such as industrial motors, grid infrastructure, and high-voltage direct current (HVDC) transmission systems. It is regarded for its capacity to withstand high voltages while minimizing losses and increasing efficiency. Furthermore, GaN's ability to function effectively at high voltages makes it ideal for applications requiring strong power handling capabilities, such as industrial machinery and grid-scale power conversion.

Breakup by Application:

• Power Drives
• Power Supply Systems
• Radio Frequency Based Systems

In line with this GaN power device market outlook, the power drives segment caters to applications involving the control and management of electric motors and drives. It includes electric vehicles (EVs), industrial automation systems, and high-performance computing cooling systems. GaN's exceptional efficiency and high switching frequencies that enable compact, lightweight, and energy-efficient designs for motor drives are positively influencing the GaN power device market drivers.

In the power supply systems segment, GaN power devices are improving the design and functionality of power supply units (PSUs), adapters, and converters across consumer electronics, telecommunications, and data centers. Their inherent properties, such as low on-resistance and high thermal conductivity, allow for smaller, lighter, and more energy-efficient power supplies to operate at higher frequencies with reduced heat generation, propelling the GaN power device market share.

The radio frequency (RF) based systems segment focuses on applications requiring high-frequency signal generation and amplification, such as cellular base stations, radar systems, satellite communications, and RF heating. They are lauded for their high-power density, efficiency, and reliability at microwave and millimeter-wave frequencies, enabling more compact and energy-efficient RF systems.

Breakup by End-Use Industry:

• Telecommunications
• Automotive
• Renewable Power Generation
• Military
• Aerospace and Defense
• Consumer Electronics
• Others

In the telecommunications industry, GaN power devices enhance network efficiency and capacity for the deployment of base stations for cellular networks, including the expansion of fifth-generation (5G) technology. Moreover, they provide the ability to handle high power densities and operate efficiently at high frequencies, which enables telecommunications equipment to support increased data traffic and provide faster and more reliable wireless communication.

The automotive segment is witnessing a significant transformation with the adoption of GaN power devices, especially in electric vehicles (EVs) and hybrid systems. It is utilized in EV powertrains, onboard chargers, DC/DC converters, and power inverters, offering higher efficiency, reduced size, and weight advantages over traditional silicon-based components. Furthermore, the ongoing shift towards electrification to meet stringent environmental regulations and enhance vehicle performance is positively influencing the future of the GaN power device market.

According to the GaN power device market trends, it plays a pivotal role in the renewable power generation sector for solar photovoltaic (PV) inverters and wind power converters. Their superior efficiency and ability to operate at high frequencies enable more compact and cost-effective renewable energy systems. Moreover, the sudden shift towards sustainable energy sources, boosting the use of GaN technology to maximize the conversion efficiency of renewable power systems, is enhancing the GaN power device market demand.

In the military, aerospace, and defense industries, GaN power devices are crucial for applications that require high power and reliability in harsh environments, such as radar systems, satellite communications, and electronic warfare. Moreover, the robustness and high performance of GaN under extreme conditions offer significant advantages in various critical applications to ensure operational effectiveness and reliability.

The consumer electronics segment leverages GaN power devices to meet the growing demand for smaller, more efficient, and powerful electronic devices. They enable compact power adapters, fast charging technologies, and efficient power management solutions for smartphones, laptops, wearables, and smart home devices. Moreover, the continuous push towards miniaturization and the need for high-performance electronics are providing a thrust to the GaN power device market growth.

Breakup by Region:

• North America
  • United States
  • Canada
• Asia Pacific
  • China
  • Japan
  • India
  • South Korea
  • Australia
  • Indonesia
  • Others
• Europe
  • Germany
  • France
  • United Kingdom
  • Italy
  • Spain
  • Russia
  • Others
• Latin America
  • Brazil
  • Mexico
  • Others
• Middle East and Africa

The report has also provided a comprehensive analysis of all the major regional markets, which include North America (the United States and Canada); Asia Pacific (China, Japan, India, South Korea, Australia, Indonesia, and others); Europe (Germany, France, the United Kingdom, Italy, Spain, Russia, and others); Latin America (Brazil, Mexico, and others); and the Middle East and Africa.

The Asia Pacific region is growing rapidly, attributed to its robust manufacturing base, significant investments in technology and infrastructure, and the rapid growth of end-use industries, such as automotive, consumer electronics, and renewable energy. Countries like China, Japan, and South Korea are at the forefront of electric vehicle (EV) production and telecommunications infrastructure, coupled with the deployment of 5G networks. For example, China accounted for 58% of global sales of electric vehicles (EVs) and a mammoth 70% of total EV production.

Europe's GaN power device market is driven by the region's strong emphasis on energy efficiency, renewable energy, and the automotive sector, owing to the rising shift towards electric vehicles. Moreover, the European Union's stringent regulations on carbon emissions and energy consumption encourage the adoption of advanced technologies like GaN. For instance, the European Parliament has adopted the European Climate Law, which raises the EU's target of reducing net greenhouse gas emissions by at least 55% by 2030 and making climate neutrality by 2050 legally binding.

North America is a key market for GaN power devices, characterized by high technological adoption rates, advanced research and development (R&D) capabilities, and a well-established telecommunications and automotive industry. The United States plays a pivotal role in the development of GaN technology, supported by the presence of leading semiconductor companies and research institutions.

The Latin American market for GaN power devices is emerging, driven by increasing investments in telecommunications, renewable energy, and automotive sectors. Moreover, the rising focus on sustainable development and energy efficiency, which presents opportunities for the expansion of GaN power device applications, is contributing to the market growth.

The Middle East and Africa (MEA) region is witnessing a growing interest in GaN power devices in applications related to renewable energy, telecommunications, and infrastructure development. Moreover, countries in the MEA region are increasingly investing in solar energy projects and infrastructure modernization, driving the demand for efficient power conversion technologies.

Competitive Landscape:

• The market research report has also provided a comprehensive analysis of the competitive landscape in the market. Detailed profiles of all major companies have also been provided. Some of the major market players in the GaN power device industry include Efficient Power Conversion, GaN Systems Inc., IQE, Koninklijke Philips N.V., MACOM Technology Solutions, Microsemi Corporation (Microchip Technology Inc.), Mitsubishi Electric Corporation, Navitas Semiconductor Inc., Qorvo Inc., Sumitomo Electric Industries Ltd., Texas Instruments Incorporated, Toshiba Corporation, Wolfspeed Inc. (Cree Inc.), etc.

(Please note that this is only a partial list of the key players, and the complete list is provided in the report.)

• Key players in the GaN power device market are actively engaging in research and development (R&D) to enhance efficiency, reduce costs, and open up new application areas. Moreover, they are focusing on innovation in manufacturing processes and device design to improve the performance and reliability of GaN devices. For instance, Sumitomo Electric Industries, Ltd. developed a gallium nitride transistor (GaN-HEMT) that uses N-polar GaN, for high-frequency amplifier applications, including 5G. Besides this, major players are forming strategic partnerships and collaborations to leverage each other's strengths to accelerate the development and commercialization of GaN solutions.

Key Questions Answered in This Report

• 1.What was the size of the global GaN power device market in 2024?
• 2.What is the expected growth rate of the global GaN power device market during 2025-2033?
• 3.What has been the impact of COVID-19 on the global GaN power device market?
• 4.What are the key factors driving the global GaN power device market?
• 5.What is the breakup of the global GaN power device market based on the end-use industry?
• 6.What are the key regions in the global GaN power device market?
• 7.Who are the key players/companies in the global GaN power device market?

Table of Contents

1 Preface

2 Scope and Methodology

• 2.1 Objectives of the Study
• 2.2 Stakeholders
• 2.3 Data Sources
  • 2.3.1 Primary Sources
  • 2.3.2 Secondary Sources
• 2.4 Market Estimation
  • 2.4.1 Bottom-Up Approach
  • 2.4.2 Top-Down Approach
• 2.5 Forecasting Methodology

3 Executive Summary

4 Introduction

• 4.1 Overview
• 4.2 Key Industry Trends

5 Global GaN Power Device Market

• 5.1 Market Overview
• 5.2 Market Performance
• 5.3 Impact of COVID-19
• 5.4 Market Forecast

6 Market Breakup by Device Type

• 6.1 Power Device
  • 6.1.1 Market Trends
  • 6.1.2 Major Types
    • 6.1.2.1 Discrete Power Device
    • 6.1.2.2 Integrated Power Device
  • 6.1.3 Market Forecast
• 6.2 RF Power Device
  • 6.2.1 Market Trends
  • 6.2.2 Major Types
    • 6.2.2.1 Discrete RF Power Device
    • 6.2.2.2 Integrated RF Power Device
  • 6.2.3 Market Forecast

7 Market Breakup by Voltage Range

• 7.1 <200 Volt
  • 7.1.1 Market Trends
  • 7.1.2 Market Forecast
• 7.2 200-600 Volt
  • 7.2.1 Market Trends
  • 7.2.2 Market Forecast
• 7.3 >600 Volt
  • 7.3.1 Market Trends
  • 7.3.2 Market Forecast

8 Market Breakup by Application

• 8.1 Power Drives
  • 8.1.1 Market Trends
  • 8.1.2 Market Forecast
• 8.2 Power Supply Systems
  • 8.2.1 Market Trends
  • 8.2.2 Market Forecast
• 8.3 Radio Frequency Based Systems
  • 8.3.1 Market Trends
  • 8.3.2 Market Forecast

9 Market Breakup by End-Use Industry

• 9.1 Telecommunications
  • 9.1.1 Market Trends
  • 9.1.2 Market Forecast
• 9.2 Automotive
  • 9.2.1 Market Trends
  • 9.2.2 Market Forecast
• 9.3 Renewable Power Generation
  • 9.3.1 Market Trends
  • 9.3.2 Market Forecast
• 9.4 Military
  • 9.4.1 Market Trends
  • 9.4.2 Market Forecast
• 9.5 Aerospace and Defense
  • 9.5.1 Market Trends
  • 9.5.2 Market Forecast
• 9.6 Consumer Electronics
  • 9.6.1 Market Trends
  • 9.6.2 Market Forecast
• 9.7 Others
  • 9.7.1 Market Trends
  • 9.7.2 Market Forecast

10 Market Breakup by Region

• 10.1 North America
  • 10.1.1 United States
    • 10.1.1.1 Market Trends
    • 10.1.1.2 Market Forecast
  • 10.1.2 Canada
    • 10.1.2.1 Market Trends
    • 10.1.2.2 Market Forecast
• 10.2 Asia Pacific
  • 10.2.1 China
    • 10.2.1.1 Market Trends
    • 10.2.1.2 Market Forecast
  • 10.2.2 Japan
    • 10.2.2.1 Market Trends
    • 10.2.2.2 Market Forecast
  • 10.2.3 India
    • 10.2.3.1 Market Trends
    • 10.2.3.2 Market Forecast
  • 10.2.4 South Korea
    • 10.2.4.1 Market Trends
    • 10.2.4.2 Market Forecast
  • 10.2.5 Australia
    • 10.2.5.1 Market Trends
    • 10.2.5.2 Market Forecast
  • 10.2.6 Indonesia
    • 10.2.6.1 Market Trends
    • 10.2.6.2 Market Forecast
  • 10.2.7 Others
    • 10.2.7.1 Market Trends
    • 10.2.7.2 Market Forecast
• 10.3 Europe
  • 10.3.1 Germany
    • 10.3.1.1 Market Trends
    • 10.3.1.2 Market Forecast
  • 10.3.2 France
    • 10.3.2.1 Market Trends
    • 10.3.2.2 Market Forecast
  • 10.3.3 United Kingdom
    • 10.3.3.1 Market Trends
    • 10.3.3.2 Market Forecast
  • 10.3.4 Italy
    • 10.3.4.1 Market Trends
    • 10.3.4.2 Market Forecast
  • 10.3.5 Spain
    • 10.3.5.1 Market Trends
    • 10.3.5.2 Market Forecast
  • 10.3.6 Russia
    • 10.3.6.1 Market Trends
    • 10.3.6.2 Market Forecast
  • 10.3.7 Others
    • 10.3.7.1 Market Trends
    • 10.3.7.2 Market Forecast
• 10.4 Latin America
  • 10.4.1 Brazil
    • 10.4.1.1 Market Trends
    • 10.4.1.2 Market Forecast
  • 10.4.2 Mexico
    • 10.4.2.1 Market Trends
    • 10.4.2.2 Market Forecast
  • 10.4.3 Others
    • 10.4.3.1 Market Trends
    • 10.4.3.2 Market Forecast
• 10.5 Middle East and Africa
  • 10.5.1 Market Trends
  • 10.5.2 Market Breakup by Country
  • 10.5.3 Market Forecast

11 SWOT Analysis

• 11.1 Overview
• 11.2 Strengths
• 11.3 Weaknesses
• 11.4 Opportunities
• 11.5 Threats

12 Value Chain Analysis

13 Porters Five Forces Analysis

• 13.1 Overview
• 13.2 Bargaining Power of Buyers
• 13.3 Bargaining Power of Suppliers
• 13.4 Degree of Competition
• 13.5 Threat of New Entrants
• 13.6 Threat of Substitutes

14 Price Indicators

15 Competitive Landscape

• 15.1 Market Structure
• 15.2 Key Players
• 15.3 Profiles of Key Players
  • 15.3.1 Efficient Power Conversion
    • 15.3.1.1 Company Overview
    • 15.3.1.2 Product Portfolio
  • 15.3.2 GaN Systems Inc.
    • 15.3.2.1 Company Overview
    • 15.3.2.2 Product Portfolio
  • 15.3.3 IQE
    • 15.3.3.1 Company Overview
    • 15.3.3.2 Product Portfolio
    • 15.3.3.3 Financials
  • 15.3.4 Koninklijke Philips N.V.
    • 15.3.4.1 Company Overview
    • 15.3.4.2 Product Portfolio
    • 15.3.4.3 Financials
  • 15.3.5 MACOM Technology Solutions
    • 15.3.5.1 Company Overview
    • 15.3.5.2 Product Portfolio
    • 15.3.5.3 Financials
  • 15.3.6 Microsemi Corporation (Microchip Technology Inc.)
    • 15.3.6.1 Company Overview
    • 15.3.6.2 Product Portfolio
    • 15.3.6.3 SWOT Analysis
  • 15.3.7 Mitsubishi Electric Corporation
    • 15.3.7.1 Company Overview
    • 15.3.7.2 Product Portfolio
    • 15.3.7.3 Financials
    • 15.3.7.4 SWOT Analysis
  • 15.3.8 Navitas Semiconductor Inc.
    • 15.3.8.1 Company Overview
    • 15.3.8.2 Product Portfolio
  • 15.3.9 Qorvo Inc.
    • 15.3.9.1 Company Overview
    • 15.3.9.2 Product Portfolio
    • 15.3.9.3 Financials
    • 15.3.9.4 SWOT Analysis
  • 15.3.10 Sumitomo Electric Industries Ltd.
    • 15.3.10.1 Company Overview
    • 15.3.10.2 Product Portfolio
    • 15.3.10.3 Financials
    • 15.3.10.4 SWOT Analysis
  • 15.3.11 Texas Instruments Incorporated
    • 15.3.11.1 Company Overview
    • 15.3.11.2 Product Portfolio
    • 15.3.11.3 Financials
  • 15.3.12 Toshiba Corporation
    • 15.3.12.1 Company Overview
    • 15.3.12.2 Product Portfolio
    • 15.3.12.3 Financials
    • 15.3.12.4 SWOT Analysis
  • 15.3.13 Wolfspeed Inc. (Cree Inc.)
    • 15.3.13.1 Company Overview
    • 15.3.13.2 Product Portfolio