![]() |
½ÃÀ庸°í¼
»óǰÄÚµå
1801055
°íÀü¾Ð MOSFET ½ÃÀå º¸°í¼ : Á¦Ç° À¯Çü, ¿ëµµ, Áö¿ªº°(2025-2033³â)High Voltage MOSFET Market Report by Product Type (Junction Tube, Insulated Gate, and Others), Application (Consumer Electronics, Automotive Electronics, Power Systems, and Others), and Region 2025-2033 |
¼¼°è °íÀü¾Ð MOSFET ½ÃÀå ±Ô¸ð´Â 2024³â 47¾ï ´Þ·¯¿¡ ´ÞÇß½À´Ï´Ù. IMARC GroupÀº 2033³â¿¡´Â 77¾ï ´Þ·¯¿¡ ´ÞÇϰí, 2025-2033³â ¿¬Æò±Õ ¼ºÀå·ü(CAGR)Àº 5.22%¸¦ º¸ÀÏ °ÍÀ¸·Î Àü¸ÁÇϰí ÀÖ½À´Ï´Ù.
°íÀü¾Ð ±Ý¼Ó-»êȸ· ¹ÝµµÃ¼ Àü°èÈ¿°ú Æ®·£Áö½ºÅÍ(MOSFET)´Â °íÀü¾Ð¿¡¼ µ¿ÀÛÇÏ´Â ÃÊÁ¢ÇÕ MOSFETÀÇ ÀÏÁ¾ÀÔ´Ï´Ù. ÀüÀÚ ½ÅÈ£ÀÇ ½ºÀ§Äª ¹× ÁõÆø¿¡ »ç¿ëµÇ´Â ½Ç¸®ÄÜ ±â¹ÝÀÇ °¢Á¾ ¹ÝµµÃ¼ ºÎǰ°ú Àü¾Ð º¯È¯À» À§ÇÑ ¼Ò½º, °ÔÀÌÆ®, µå·¹ÀÎÀÇ ¼¼ °¡Áö Àý¿¬ ´ÜÀÚ·Î ±¸¼ºµË´Ï´Ù. ±âÁ¸ MOSFET¿¡ ºñÇØ °ÔÀÌÆ® »êȹ° ´©¼³ ÃÖ¼ÒÈ, ³ôÀº Àü·Â ¹Ðµµ, Ãâ·Â ÀúÇ× Çâ»ó µî ´Ù¾çÇÑ ÀåÁ¡ÀÌ ÀÖ½À´Ï´Ù. ±× °á°ú, »ê¾÷¿ë Àü¿ø, ÀüÀÚ, ÀÚµ¿Â÷ µî ´Ù¾çÇÑ »ê¾÷ ºÐ¾ß¿¡¼ Æø³Ð°Ô »ç¿ëµÇ°í ÀÖ½À´Ï´Ù.
»ê¾÷ ÀÚµ¿È Áõ°¡¿Í ¿¡³ÊÁö È¿À²ÀûÀÎ Àü±â ½Ã½ºÅÛ¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡´Â ½ÃÀå¿¡ ±àÁ¤ÀûÀÎ ¿µÇâÀ» ¹ÌÄ¡´Â ÁÖ¿ä ¿äÀÎÀ¸·Î ÀÛ¿ëÇϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ, ÀÚµ¿Â÷ ÀüÀÚ ºÎǰ Á¦Á¶¿¡ ³Î¸® äÅõǰí ÀÖ´Â °Íµµ ½ÃÀå ¼ºÀåÀ» °¡¼ÓÇϰí ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ MOSFETÀº ¹æ¿ ¹× ¹ÝµµÃ¼ ¸ðµâÀÇ Å©±â¸¦ ÁÙÀ̰í ÀÚµ¿Â÷ÀÇ ¿¬ºñ¸¦ °³¼±Çϱâ À§ÇØ ÇÏÀ̺긮µå ÀÚµ¿Â÷ ¹× Àü±âÀÚµ¿Â÷(H/EV)¿¡ ³Î¸® »ç¿ëµÇ°í ÀÖ½À´Ï´Ù. ÀÌ¿¡ µû¶ó °íÀü¾Ð MOSFETÀº ž籤 ¹× dz·Â ¹ßÀü ÆÐ³ÎÀÇ Áö¼Ó °¡´ÉÇÑ ¿¡³ÊÁö »ý¼º ¹× ºÐ¹è¿¡µµ Ȱ¿ëµÇ°í ÀÖ½À´Ï´Ù. ¶ÇÇÑ, Ä¿³ØÆ¼µå µð¹ÙÀ̽ºÀÇ IoT(»ç¹°ÀÎÅͳÝ) ¹× Ŭ¶ó¿ìµå ÄÄÇ»ÆÃ ¼Ö·ç¼Ç°úÀÇ ÅëÇÕ µî ´Ù¾çÇÑ ±â¼ú ¹ßÀüÀÌ ¶Ç ´Ù¸¥ ¼ºÀå ÃËÁø¿äÀÎÀ¸·Î ÀÛ¿ëÇϰí ÀÖ½À´Ï´Ù. µû¶ó¼ Àüµµ ¼Õ½ÇÀ» ÃÖ¼ÒÈÇϰí, °æºÎÇÏ ½Ã ¿ÍÆ® ¼Õ½ÇÀ» ¾ïÁ¦Çϸç, ¿ªÈ¸º¹À» °³¼±ÇÑ MOSFET¿¡ ´ëÇÑ ¿ä±¸°¡ ³ô¾ÆÁö°í ÀÖ½À´Ï´Ù. ±âŸ ¿äÀÎÀ¸·Î´Â Àç»ý¿¡³ÊÁö ÀÚ¿ø¿¡ ±â¹ÝÇÑ Àü¿ø °ø±Þ ÀåÄ¡ÀÇ »ç¿ë Áõ°¡¿Í ±¤¹üÀ§ÇÑ Á¶»ç °³¹ß(R&D) Ȱµ¿ÀÌ ½ÃÀåÀ» ´õ¿í °ßÀÎÇÒ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù.
The global high voltage MOSFET market size reached USD 4.7 Billion in 2024. Looking forward, IMARC Group expects the market to reach USD 7.7 Billion by 2033, exhibiting a growth rate (CAGR) of 5.22% during 2025-2033.
High voltage metal-oxide semiconductor field-effect transistors (MOSFETs) refer to a kind of super junction MOSFET that operates at higher voltages. It consists of various silicon-based semiconductor components used for switching or amplifying electronic signals and three insulated terminals, namely source, gate and drain, for voltage conversion. In comparison to the traditionally used MOSFETs, these variants offer various benefits, such as minimal gate-oxide leakage, high power density and enhanced output resistance. As a result, it finds extensive applications across various industries, such as industrial power, electronics and automotive.
Increasing industrial automation and the growing demand for electrical systems with high energy efficiencies, represent as the key factors creating a positive impact on the market. Furthermore, the widespread product adoption for manufacturing automobile electronic components is also driving the market growth. These MOSFETs are extensively used in hybrid and electronic vehicles (H/EVs) to reduce heat dissipation and semiconductor module size, and an improved fuel efficiency of the vehicle. In line with this, high-voltage MOSFETs are also utilized for generating and distributing sustainable energy from solar and wind energy panels. Additionally, various technological advancements, such as the integration of connected devices with the internet-of-things (IoT) and cloud computing solutions, are acting as other growth-inducing factors. This has increased the requirement for MOSFETs with minimal conduction loss, suppressed watt loss under light loads and improved reverse recovery. Other factors, including the increasing utilization of renewable energy resource-based power supplies, along with extensive research and development (R&D) activities, are anticipated to drive the market further.
The report has also analysed the competitive landscape of the market with some of the key players being Alpha and Omega Semiconductor Limited, Diodes Incorporated, Infineon Technologies AG, NXP Semiconductors N.V., ON Semiconductor Corporation, Renesas Electronics Corporation, Rohm Co. Ltd., STMicroelectronics N.V., Toshiba Corporation and Vishay Intertechnology Inc.