½ÃÀ庸°í¼­
»óǰÄÚµå
1601116

ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå : ºÐ·ù, ¿þÀÌÆÛ »çÀÌÁî, ÃÖÁ¾»ç¿ëÀÚº° - ¼¼°è ¿¹Ãø(2025-2030³â)

Non-Volatile Memory Market by Classification (Ferroelectric Random-access Memory, Magnetic Random-access Memory, NRAM), Wafer Size (200mm, 300mm, 450mm), End-User - Global Forecast 2025-2030

¹ßÇàÀÏ: | ¸®¼­Ä¡»ç: 360iResearch | ÆäÀÌÁö Á¤º¸: ¿µ¹® 191 Pages | ¹è¼Û¾È³» : 1-2ÀÏ (¿µ¾÷ÀÏ ±âÁØ)

    
    
    




¡á º¸°í¼­¿¡ µû¶ó ÃֽŠÁ¤º¸·Î ¾÷µ¥ÀÌÆ®ÇÏ¿© º¸³»µå¸³´Ï´Ù. ¹è¼ÛÀÏÁ¤Àº ¹®ÀÇÇØ Áֽñ⠹ٶø´Ï´Ù.

ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀåÀÇ 2023³â ½ÃÀå ±Ô¸ð´Â 873¾ï 3,000¸¸ ´Þ·¯, 2024³â¿¡´Â 956¾ï ´Þ·¯¿¡ À̸¦ °ÍÀ¸·Î ¿¹ÃøµÇ¸ç, CAGR 10.10%·Î ¼ºÀåÇÏ¿© 2030³â¿¡´Â 1,713¾ï 1,000¸¸ ´Þ·¯¿¡ ´ÞÇÒ Àü¸ÁÀÔ´Ï´Ù.

ºñÈֹ߼º ¸Þ¸ð¸®(NVM) ½ÃÀåÀº Àü·ÂÀ» ÀÚ¸¥ ´ÙÀ½¿¡µµ º¸Á¸µÈ Á¤º¸¸¦ º¸°ü À¯ÁöÇÏ´Â ´É·Â¿¡ ÀÇÇØ¼­ Á¤ÀǵǾî Ç÷¡½Ã¸Þ¸ð¸®·ÎºÎÅÍ ½ÅÈï ÀúÇ×Çü RAM±îÁö Æø³ÐÀº ±â¼úÀÌ ÀÖ½À´Ï´Ù. ÀÌ ´É·ÂÀº µ¥ÀÌÅÍ ½ºÅ丮Áö, ¸ð¹ÙÀÏ ±â±â, Â÷·®³» ¿ëÀüÀÚ±â±â, »ê¾÷¿ëµµµîÀÇ ¿ëµµ¿¡ ÇʼöÀûÀ̾î, ÀÌ·¯ÇÑ ºÐ¾ß¿¡ ÇʼöÀûÀÎ ½Å·Ú¼º°ú È¿À²À» Á¦°øÇÕ´Ï´Ù. NVM ÃÖÁ¾ ¿ëµµ ¹üÀ§´Â ±¤´ëÇϰí, °¡Àü, ÇコÄɾî, ÀÚµ¿Â÷, Åë½Å, ±â¾÷¡¤½ºÅ丮ÁöµîÀÌ Æ÷ÇԵ˴ϴÙ. ½ÃÀå ¼ºÀå ÁÖ¿ä ¿øµ¿·ÂÀº Ä¿³ØÆ¼µå µð¹ÙÀ̽º³ª »ç¹°ÀÎÅͳÝ(IoT) º¸±Þ°ú ÇÔ²², °í¼Ó, Àú¼ÒºñÀü·Â, °­È­µÈ ½ºÅ丮Áö ¼Ö·ç¼Ç¿¡ ¼ö¿ä°¡ ³ô¾ÆÁö°í ÀÖ´Â °ÍÀÔ´Ï´Ù. µ¥ÀÌÅÍ »ý¼º ±ÞÁõ°ú È¿À²ÀûÀÎ µ¥ÀÌÅͼ¾ÅÍ Çʿ伺ÀÌ, ÷´ÜNVM ±â¼ú¿¡ ¼ö¿ä¸¦ ÇÑÃþ ´õ ³ôÀ̰í ÀÖ½À´Ï´Ù. ÃֽŠÀáÀçÀûÀÎ ºñÁî´Ï½º ±âȸ ¾È¿¡´Â 3D NAND °³¹ß, ÀΰøÁö´ÉÀ̳ª ¸Ó½Å·¯´× ¿ëµµ NVM ÅëÇÕÀÌ ÀÖ½À´Ï´Ù. À̰͵éÀ» Ȱ¿ëÇϱâ À§ÇÑ Ãßõ »çÇ׿¡´Â ºñ¿ë È¿À² ³ôÀº °í¹Ðµµ NVM ¼Ö·ç¼Ç ¿¬±¸°³¹ß¿¡ ´ëÇÑ ÅõÀÚ³ª, ±Þ¼ÓÇÑ »ê¾÷È­¿Í ±â¼ú µµÀÔÀÌ ÁøÇàµÇ´Â ¾Æ½Ã¾ÆÅÂÆò¾ç ½ÅÈï ½ÃÀåÀ» Ȱ¿ëÇϱâ À§ÇÑ Àü·«Àû ÆÄÆ®³Ê½Ê Çü¼ºµîÀÌ ÀÖ½À´Ï´Ù. ±×·¯³ª, ÀÌ ½ÃÀåÀº ±â¼ú º¹À⼺, Ãʱ⠺ñ¿ë ³ôÀÌ, ´ÙÀ̳ª¹Í RAM(DRAM)µîÀÇ ´ëü ¸Þ¸ð¸® ±â¼ú°úÀÇ °æÀïÀ̶ó°í ÇÏ´Â ÇѰ迡 Á÷¸éÇϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ ½ºÄÉÀϸµ °úÁ¦³ª Àç·á ÇѰ赵, Á¦Ç° °³¹ß ÁøÀüÀ» ¹æÇØÇÒ °¡´É¼ºÀÌ ÀÖ½À´Ï´Ù. NVM ±â¼ú È®À强¿Í Àü·Â È¿À² °³¼±, ½ÅÀç·á ޱ¸, ´Ù¾çÇÑ ¿ëµµ ¿ä±¸¿¡ ´ëÀÀÇϱâ À§ÇÑ ³»±¸¼º°ú º¸°ü À¯Áö Ư¼º °­È­¿¡ ÁÖ·Â ÇÏ´Â °ÍÀ¸·Î, Çõ½ÅÀ» ÃßÁøÇÒ ¼ö ÀÖ½À´Ï´Ù. ÀüüÀûÀ¸·Î, ½ÃÀåÀº ±Þ¼ÓÇÑ ±â¼ú Áøº¸¿Í °æÀï ±¸µµ¸¦ Ư¡À¸·Î Çϰí ÀÖ¾î, ½ÃÀå¿¡¼­ÀÇ Á¸Àç°¨À» À¯Áö¡¤È®´ëÇϱâ À§Çؼ­´Â Áö¼ÓÀû±â¼ú Çõ½Å°ú Àü·«Àû Æ÷Áö¼Å´×ÀÌ ÇÊ¿äÇÕ´Ï´Ù.

ÁÖ¿ä ½ÃÀå Åë°è
±âÁØ ¿¬µµ(2023³â) 873¾ï 3,000¸¸ ´Þ·¯
¿¹Ãø ¿¬µµ(2024³â) 956¾ï ´Þ·¯
¿¹Ãø ¿¬µµ(2030³â) 1,713¾ï 1,000¸¸ ´Þ·¯
CAGR(%) 10.10%

½ÃÀå ¿ªÇÐ : ±Þ¼ÓÈ÷ ÁøÈ­ÇÏ´Â ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå ÁÖ¿ä ½ÃÀå ÀλçÀÌÆ®¸¦ °ø°³

ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀåÀº ¼ö¿ä ¹× °ø±Þ ´ÙÀ̳ª¹ÍÇÑ »óÈ£ÀÛ¿ë¿¡ ÀÇÇØ¼­ º¯¸ð¸¦ ÀÌ·ç°í ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ ½ÃÀå ¿ªÇÐ ÁøÈ­¸¦ ÀÌÇØÇÏ´Â °ÍÀ¸·Î, ±â¾÷Àº ÃæºÐÇÑ Á¤º¸¿¡ ±Ù°ÅÇÑ ÅõÀÚ °áÁ¤, Àü·«Àû °áÁ¤ Á¤Ä¡È­, ±×¸®°í »õ·Î¿î ºñÁî´Ï½º ±âȸ ȹµæ¿¡ ´ëºñÇÒ ¼ö ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ µ¿ÇâÀ» Á¾ÇÕÀûÀ¸·Î ÆÄ¾ÇÇÏ´Â °ÍÀ¸·Î, ±â¾÷Àº Á¤Ä¡Àû, Áö¿ª ¸ñÇ¥, ±â¼úÀû, »çȸÀû, °æÁ¦ÀûÀÎ ¿µ¿ª¿¡ °Ç³Ê°¡´Â ´Ù¾çÇÑ ¸®½ºÅ©¸¦ °æ°¨ÇÒ ¼ö ÀÖ¾î ¶ÇÇÑ ¼ÒºñÀÚ Çൿ°ú ±×°ÍÀÌ Á¦Á¶ ºñ¿ëÀ̳ª ±¸¸Å µ¿Çâ¿¡ ¹ÌÄ¡´Â ¿µÇâÀ» º¸´Ù ¸íÈ®ÇÏ°Ô ÀÌÇØÇÒ ¼ö ÀÖ½À´Ï´Ù.

  • ½ÃÀå ¼ºÀå ÃËÁø¿äÀÎ
    • ±Þ¼ÓÇÑ µðÁöÅÐÈ­¿Í ½ºÅ丮Áö¡¤¿ëµµ¿¡ ¼ö¿ä
    • Çϵ塤½ºÅ×ÀÌÆ®¡¤µå¶óÀ̺ê·ÎºÎÅÍ ¼Ö¸®µå¡¤½ºÅ×ÀÌÆ®¡¤µå¶óÀ̺꿡ÀÇ À̵¿
  • ½ÃÀå ¼ºÀå ¾ïÁ¦¿äÀÎ
    • ºñÈֹ߼º ¸Þ¸ð¸® °íºñ¿ë°ú ÇÑÁ¤µÈ ¼ö¸í
  • ½ÃÀå ±âȸ
    • ÷´Ü»ê¾÷¿ë Ç÷¡½Ã¸Þ¸ð¸® ¼­·Ð
    • ½ÅÈï ºñÈֹ߼º ¸Þ¸ð¸® µð¹ÙÀ̽º º¸±Þ
  • ½ÃÀåÀÌ ÇØ°áÇØ¾ß ÇÒ °úÁ¦
    • ºñÈֹ߼º ¸Þ¸ð¸® µð¹ÙÀ̽º ¼º´É ¹®Á¦

Porter's Five Forces : ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀåÀ» ¾È³»ÇÏ´Â Àü·« Åø

Porter's Five Forces ÇÁ·¹ÀÓ¿öÅ©´Â ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå °æÀï ±¸µµ¸¦ ÀÌÇØÇϱâ À§ÇÑ Áß¿ä ÅøÀÔ´Ï´Ù. Porter's Five Forces¡¤ÇÁ·¹ÀÓ¿öÅ©´Â ±â¾÷ °æÀï·ÂÀ» Æò°¡ÇØ, Àü·«Àû ±âȸ¸¦ ã±â À§ÇÑ ¸íÈ®ÇÑ ¹æ¹ýÀ» Á¦°øÇÕ´Ï´Ù. ÀÌ ÇÁ·¹ÀÓ¿öÅ©´Â ±â¾÷ÀÌ ½ÃÀå³» ¼¼·Âµµ¸¦ Æò°¡ÇØ, ½Å±Ô »ç¾÷ ¼öÀͼºÀ» ÆÇ´ÜÇϴµ¥ µµ¿òÀÌ µË´Ï´Ù. ÀÌ·¯ÇÑ ÅëÂû¿¡ ÀÇÇØ ±â¾÷Àº ÀÚ»ç °­Á¡À» »ì·Á, ¾àÁ¡¿¡ ´ëÃ³ÇØ, ÀáÀçÀûÀÎ °úÁ¦¸¦ ȸÇÇÇÒ ¼ö À־´Ù °­ÀÎÇÑ ½ÃÀå¿¡¼­ÀÇ Æ÷Áö¼Å´×À» È®º¸ÇÒ ¼ö ÀÖ½À´Ï´Ù.

PESTLE ºÐ¼® : ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå ¿ÜºÎ·ÎºÎÅÍ ¿µÇâ ÆÄ¾Ç

¿ÜºÎ °Å½Ãȯ°æ ¿äÀÎÀº ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå ½ÇÀû ¿ªÇÐÀ» Çü¼ºÇϴµ¥ À־ ¸Å¿ì Áß¿ä ¿ªÇÒÀ» ¿Ï¼öÇÕ´Ï´Ù. Á¤Ä¡Àû, °æÁ¦Àû, »çȸÀû, ±â¼úÀû, ¹ýÀû, ȯ°æÀû ¿äÀÎ ºÐ¼®Àº ÀÌ·¯ÇÑ ¿µÇâÀ» ¾È³»Çϱâ À§Çؼ­ ÇÊ¿äÇÑ Á¤º¸¸¦ Á¦°øÇÕ´Ï´Ù. PESTLE ¿äÀÎÀ» Á¶»çÇÏ´Â °ÍÀ¸·Î, ±â¾÷Àº ÀáÀçÀûÀÎ ¸®½ºÅ©¿Í ±âȸ¸¦ º¸´Ù ÁÁ°Ô ÀÌÇØÇÒ ¼ö ÀÖ½À´Ï´Ù. ÀÌ ºÐ¼®¿¡ ÀÇÇØ ±â¾÷Àº ±ÔÁ¦, ¼ÒºñÀÚ ¼±È£µµ, °æÁ¦ µ¿Çâ º¯È­¸¦ ¿¹ÃøÇØ, ¾ÕÀ» ¿¹ÃøÇÑ Àû±ØÀûÀÎ ÀÇ»ç°áÁ¤À» ½Ç½ÃÇÒ Áغñ¸¦ ÇÒ ¼ö ÀÖ½À´Ï´Ù.

½ÃÀå Á¡À¯À² ºÐ¼® ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå °æÀï ±¸µµ ÆÄ¾Ç

ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå »ó¼¼ÇÑ ½ÃÀå Á¡À¯À² ºÐ¼®¿¡ ÀÇÇØ º¥´õ ½ÇÀûÀ» Á¾ÇÕÀûÀ¸·Î Æò°¡ÇÒ ¼ö ÀÖ½À´Ï´Ù. ±â¾÷Àº ¸ÅÃâ, °í°´ ±â¹Ý, ¼ºÀå·üµîÀÇ ÁÖ¿ä ÁöÇ¥¸¦ ºñ±³ÇÏ´Â °ÍÀ¸·Î, °æÀï»ó Æ÷Áö¼Å´×À» ºÐ¸íÈ÷ ÇÒ ¼ö ÀÖ½À´Ï´Ù. ÀÌ ºÐ¼®¿¡ ÀÇÇØ ½ÃÀå ÁýÁß, ´ÜÆíÈ­, ÅëÇÕ µ¿ÇâÀÌ ¹àÇôÁ®, º¥´õ´Â °æÀïÀÌ °ÝÈ­ÇÏ´Â °¡¿îµ¥ ÀÚ»ç ÁöÀ§¸¦ ³ôÀÌ´Â Àü·«Àû ÀÇ»ç°áÁ¤À» ½Ç½ÃÇϱâ À§Çؼ­ ÇÊ¿äÇÑ Áö°ßÀ» ¾òÀ» ¼ö ÀÖ½À´Ï´Ù.

FPNV Æ÷Áö¼Å´× ¸ÅÆ®¸¯½º ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå º¥´õ ÆÛÆ÷¸Õ½º Æò°¡

FPNV Æ÷Áö¼Å´× ¸ÅÆ®¸¯½º´Â ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå¿¡¼­ º¥´õ¸¦ Æò°¡Çϱâ À§ÇÑ Áß¿ä ÅøÀÔ´Ï´Ù. ÀÌ ¸ÅÆ®¸¯½º¿¡ ÀÇÇØ ºñÁî´Ï½º Á¶Á÷Àº º¥´õ ºñÁî´Ï½º Àü·«°ú Á¦Ç° ¸¸Á·µµ¿¡ ±Ù°ÅÇØ Æò°¡ÇÏ´Â °ÍÀ¸·Î, ¸ñÇ¥¿¡ µû¸¥ ÃæºÐÇÑ Á¤º¸¿¡ ±Ù°ÅÇÑ ÀÇ»ç°áÁ¤À» ½Ç½ÃÇÒ ¼ö ÀÖ½À´Ï´Ù. 4°³ »óÇÑÀº º¥´õ¸¦ ¸íÈ®Çϰí Á¤È®ÇÏ°Ô ±¸ºÐÇØ, »ç¿ëÀÚ°¡ Àü·« ¸ñÇ¥·Î ÃÖÀûÀÎ ÆÄÆ®³Ê³ª ¼Ö·ç¼ÇÀ» ƯÁ¤Çϴµ¥ µµ¿òÀÌ µË´Ï´Ù.

º» º¸°í¼­´Â ÁÖ¿ä ÁÖ¸ñ ºÐ¾ß¸¦ ¸Á¶óÇÑ Á¾ÇÕÀû½ÃÀå ºÐ¼®À» Á¦°øÇϰí ÀÖ½À´Ï´Ù :

1.½ÃÀå ħÅõµµ : ¾÷°è ÁÖ¿ä ±â¾÷ ±¤¹üÀ§ÇÑ µ¥ÀÌÅ͸¦ Æ÷ÇÔÇÑ ÇöÀç ½ÃÀå ȯ°æ »ó¼¼ÇÑ ¸®ºä.

2.½ÃÀå °³Ã´µµ : ½ÅÈï ½ÃÀå ¼ºÀå ±âȸ¸¦ ƯÁ¤ÇØ, ±âÁ¸ ºÐ¾ß È®´ë °¡´É¼ºÀ» Æò°¡ÇØ, ÇâÈÄ ¼ºÀåÀ» ÇâÇÑ Àü·«Àû ·Îµå¸ÊÀ» Á¦°øÇÕ´Ï´Ù.

3.½ÃÀå ´Ù¾çÈ­ : ÃÖ±Ù Á¦Ç° ¹ß¸Å, ¹Ì°³Ã´ Áö¿ª, ¾÷°è ÁÖ¿ä Áøº¸, ½ÃÀåÀ» Çü¼ºÇÏ´Â Àü·«Àû ÅõÀÚ¸¦ ºÐ¼®ÇÕ´Ï´Ù.

4.°æÀï Æò°¡¿Í Á¤º¸ : °æÀï ±¸µµ¸¦ öÀúÇÏ°Ô ºÐ¼®ÇÏ°í ½ÃÀå Á¡À¯À², »ç¾÷ Àü·«, Á¦Ç° Æ÷Æ®Æú¸®¿À, ÀÎÁõ, ±ÔÁ¦±â°ü ½ÂÀÎ, ƯÇã µ¿Çâ, ÁÖ¿ä ±â¾÷ ±â¼ú Áøº¸µîÀ» °ËÁõ ÇÕ´Ï´Ù.

5.Á¦Ç° °³¹ß ¹× Çõ½Å : ÇâÈÄ ½ÃÀå ¼ºÀåÀ» °¡¼ÓÇÑ´Ù°í ±â´ëµÇ´Â ÃÖ÷´Ü ±â¼ú, ¿¬±¸°³¹ß Ȱµ¿, Á¦Ç° Çõ½ÅÀ» ÇÏÀ̶óÀÌÆ® Çϰí ÀÖ½À´Ï´Ù.

¶ÇÇÑ ÀÌÇØ°ü°èÀÚ°¡ ÃæºÐÇÑ Á¤º¸¸¦ ¾òÀº ´ÙÀ½ ÀÇ»ç°áÁ¤ ÇÒ ¼ö ÀÖµµ·Ï, Áß¿ä Áú¹®¿¡µµ ´äÇϰí ÀÖ½À´Ï´Ù :

1.ÇöÀç ½ÃÀå ±Ô¸ð¿Í ÇâÈÄ ¼ºÀå ¿¹ÃøÀº?

2.ÃÖ°í ÅõÀÚ ±âȸ¸¦ Á¦°øÇÏ´Â Á¦Ç°, ºÎ¹®, Áö¿ªÀº ¾îµò°¡?

3.½ÃÀåÀ» Çü¼ºÇÏ´Â ÁÖ¿ä ±â¼ú µ¿Çâ°ú ±ÔÁ¦ ¿µÇâÀ̶õ?

4.ÁÖ¿ä º¥´õÀÇ ½ÃÀå Á¡À¯À²°ú °æÀï Æ÷Áö¼ÇÀº?

5.º¥´õ ½ÃÀå Âü¿©¡¤Ã¶Åð Àü·« ¿øµ¿·ÂÀÌ µÇ´Â ¼öÀÔ¿ø°ú Àü·«Àû ±âȸ´Â ¹«¾ùÀΰ¡?

¸ñÂ÷

Á¦1Àå ¼­¹®

Á¦2Àå Á¶»ç ¹æ¹ý

Á¦3Àå ÁÖ¿ä ¿ä¾à

Á¦4Àå ½ÃÀå °³¿ä

Á¦5Àå ½ÃÀå ÀλçÀÌÆ®

  • ½ÃÀå ¿ªÇÐ
    • ¼ºÀå ÃËÁø¿äÀÎ
    • ¼ºÀå ¾ïÁ¦¿äÀÎ
    • ±âȸ
    • °úÁ¦
  • ½ÃÀå ¼¼ºÐÈ­ ºÐ¼®
  • Porter's Five Forces ºÐ¼®
  • PESTEL ºÐ¼®
    • Á¤Ä¡
    • °æÁ¦
    • »çȸ
    • ±â¼ú
    • ¹ý·ü
    • ȯ°æ

Á¦6Àå ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå : ºÐ·ùº°

  • °­À¯Àüü RAM
  • ÀÚ±â RAM
    • DRAM
      • ¹Ð¸® Çǵå
    • FLASH
      • NAND Flash
      • NOR Flash
    • ½½·¥
      • NVRAM
  • ³ª¶÷
  • »óº¯È­ ¸Þ¸ð¸®
  • ¾çÀÚÁ¡
  • CBRAM
  • RRAM
    • EPROM
    • SPROM

Á¦7Àå ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå : ¿þÀÌÆÛ »çÀÌÁ

  • 200mm
  • 300mm
  • 450mm

Á¦8Àå ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå : ÃÖÁ¾»ç¿ëÀÚº°

  • ³ó¾÷
  • ÀÚµ¿Â÷ ¹× ¿î¼Û
  • °¡Àü
  • ¿¡³ÊÁö ¹× Àü·Â
  • ±â¾÷ ½ºÅ丮Áö
  • ÇコÄɾî
  • »ê¾÷
  • ±º ¹× Ç×°ø¿ìÁÖ
  • ¼Ò¸Å ¹× ¼ÒºñÀç
  • Åë½Å

Á¦9Àå ¾Æ¸Þ¸®Ä«ÀÇ ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå

  • ¾Æ¸£ÇîÆ¼³ª
  • ºê¶óÁú
  • ij³ª´Ù
  • ¸ß½ÃÄÚ
  • ¹Ì±¹

Á¦10Àå ¾Æ½Ã¾ÆÅÂÆò¾çÀÇ ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå

  • È£ÁÖ
  • Áß±¹
  • Àεµ
  • Àεµ³×½Ã¾Æ
  • ÀϺ»
  • ¸»·¹À̽þÆ
  • Çʸ®ÇÉ
  • ½Ì°¡Æ÷¸£
  • Çѱ¹
  • ´ë¸¸
  • ű¹
  • º£Æ®³²

Á¦11Àå À¯·´, Áßµ¿ ¹× ¾ÆÇÁ¸®Ä«ÀÇ ºñÈֹ߼º ¸Þ¸ð¸® ½ÃÀå

  • µ§¸¶Å©
  • ÀÌÁýÆ®
  • Çɶõµå
  • ÇÁ¶û½º
  • µ¶ÀÏ
  • À̽º¶ó¿¤
  • ÀÌÅ»¸®¾Æ
  • ³×´ú¶õµå
  • ³ªÀÌÁö¸®¾Æ
  • ³ë¸£¿þÀÌ
  • Æú¶õµå
  • īŸ¸£
  • ·¯½Ã¾Æ
  • »ç¿ìµð¾Æ¶óºñ¾Æ
  • ³²¾ÆÇÁ¸®Ä«°øÈ­±¹
  • ½ºÆäÀÎ
  • ½º¿þµ§
  • ½ºÀ§½º
  • ÅÍŰ
  • ¾Æ¶ø¿¡¹Ì¸®Æ®(UAE)
  • ¿µ±¹

Á¦12Àå °æÀï ±¸µµ

  • ½ÃÀå Á¡À¯À² ºÐ¼®, 2023
  • FPNV Æ÷Áö¼Å´× ¸ÅÆ®¸¯½º, 2023
  • °æÀï ½Ã³ª¸®¿À ºÐ¼®

±â¾÷ ¸®½ºÆ®

  • Infineon Technologies AG
  • Western Digital Corporation
  • Synopsys, Inc.
  • Intel Corporation
  • Hewlett Packard Enterprise Development LP
  • SMART Modular Technologies, Inc.
  • Windbond Electronics Corporation
  • Micron Technology, Inc.
  • Avalanche Technology Inc.
  • SK hynix Co., Ltd.
  • SkyHigh Memory Limited
  • KIOXIA Holdings Corporation
  • Everspin Technologies, Inc.
  • Fujitsu Limited
  • NVMdurance Ltd.
  • STMicroelectronics N.V.
  • Microchip Technology Inc.
  • Flexxon Pte Ltd.
  • Nantero, Inc.
  • ATP Electronics, Inc.
  • Renesas Electronics Corporation
  • Toshiba Corporation
  • Viking Technologies, Inc.
  • Samsung Electronics Co., Ltd.
  • Pure Storage, Inc.
  • CrossBar, Inc.
LSH 24.12.06

The Non-Volatile Memory Market was valued at USD 87.33 billion in 2023, expected to reach USD 95.60 billion in 2024, and is projected to grow at a CAGR of 10.10%, to USD 171.31 billion by 2030.

The non-volatile memory (NVM) market is defined by its ability to retain stored information even after power has been turned off, with technologies ranging from flash memory to emerging resistive RAM. This capability is essential in applications such as data storage, mobile devices, automotive electronics, and industrial uses, providing reliability and efficiency critical to these sectors. The end-use scope of NVM is vast, encompassing consumer electronics, healthcare, automotive, telecommunications, and enterprise storage, among others. Market growth is primarily driven by the increasing demand for high-speed, low-power, and enhanced storage solutions, coupled with the proliferation of connected devices and the Internet of Things (IoT). The surge in data generation and the need for efficient data centers further fuel the demand for advanced NVM technologies. Among the latest potential opportunities are the developments in 3D NAND and the integration of NVM in artificial intelligence and machine learning applications, which are set to revolutionize data processing and storage efficiency. Recommendations to capitalize on these include investing in R&D for cost-effective, high-density NVM solutions and forming strategic partnerships to leverage emerging markets in Asia-Pacific, where rapid industrialization and tech adoption are occurring. However, the market faces limitations such as technological complexities, high initial costs, and competition from alternative memory technologies like dynamic RAM (DRAM). Additionally, scaling challenges and material limitations could hinder progress in product development. Innovation can be driven by focusing on improving the scalability and power efficiency of NVM technologies, exploring new materials, and enhancing endurance and retention characteristics to meet diverse application needs. Overall, the market is characterized by rapid technological advancements and a competitive landscape that requires continuous innovation and strategic positioning to maintain and expand market presence.

KEY MARKET STATISTICS
Base Year [2023] USD 87.33 billion
Estimated Year [2024] USD 95.60 billion
Forecast Year [2030] USD 171.31 billion
CAGR (%) 10.10%

Market Dynamics: Unveiling Key Market Insights in the Rapidly Evolving Non-Volatile Memory Market

The Non-Volatile Memory Market is undergoing transformative changes driven by a dynamic interplay of supply and demand factors. Understanding these evolving market dynamics prepares business organizations to make informed investment decisions, refine strategic decisions, and seize new opportunities. By gaining a comprehensive view of these trends, business organizations can mitigate various risks across political, geographic, technical, social, and economic domains while also gaining a clearer understanding of consumer behavior and its impact on manufacturing costs and purchasing trends.

  • Market Drivers
    • Rapid Digitalization and Demand for Storage Applications
    • Shift From Hard State Drive to Solid State Drives
  • Market Restraints
    • High Cost and Limited Lifetime of Non-Volatile Memory
  • Market Opportunities
    • Introduction of Advanced Industrial Grade Flash Memory
    • Penetration of Emerging Non-Volatile Memory Devices
  • Market Challenges
    • Performance Issues Associated with Non-Volatile Memory Devices

Porter's Five Forces: A Strategic Tool for Navigating the Non-Volatile Memory Market

Porter's five forces framework is a critical tool for understanding the competitive landscape of the Non-Volatile Memory Market. It offers business organizations with a clear methodology for evaluating their competitive positioning and exploring strategic opportunities. This framework helps businesses assess the power dynamics within the market and determine the profitability of new ventures. With these insights, business organizations can leverage their strengths, address weaknesses, and avoid potential challenges, ensuring a more resilient market positioning.

PESTLE Analysis: Navigating External Influences in the Non-Volatile Memory Market

External macro-environmental factors play a pivotal role in shaping the performance dynamics of the Non-Volatile Memory Market. Political, Economic, Social, Technological, Legal, and Environmental factors analysis provides the necessary information to navigate these influences. By examining PESTLE factors, businesses can better understand potential risks and opportunities. This analysis enables business organizations to anticipate changes in regulations, consumer preferences, and economic trends, ensuring they are prepared to make proactive, forward-thinking decisions.

Market Share Analysis: Understanding the Competitive Landscape in the Non-Volatile Memory Market

A detailed market share analysis in the Non-Volatile Memory Market provides a comprehensive assessment of vendors' performance. Companies can identify their competitive positioning by comparing key metrics, including revenue, customer base, and growth rates. This analysis highlights market concentration, fragmentation, and trends in consolidation, offering vendors the insights required to make strategic decisions that enhance their position in an increasingly competitive landscape.

FPNV Positioning Matrix: Evaluating Vendors' Performance in the Non-Volatile Memory Market

The Forefront, Pathfinder, Niche, Vital (FPNV) Positioning Matrix is a critical tool for evaluating vendors within the Non-Volatile Memory Market. This matrix enables business organizations to make well-informed decisions that align with their goals by assessing vendors based on their business strategy and product satisfaction. The four quadrants provide a clear and precise segmentation of vendors, helping users identify the right partners and solutions that best fit their strategic objectives.

Key Company Profiles

The report delves into recent significant developments in the Non-Volatile Memory Market, highlighting leading vendors and their innovative profiles. These include Infineon Technologies AG, Western Digital Corporation, Synopsys, Inc., Intel Corporation, Hewlett Packard Enterprise Development LP, SMART Modular Technologies, Inc., Windbond Electronics Corporation, Micron Technology, Inc., Avalanche Technology Inc., SK hynix Co., Ltd., SkyHigh Memory Limited, KIOXIA Holdings Corporation, Everspin Technologies, Inc., Fujitsu Limited, NVMdurance Ltd., STMicroelectronics N.V., Microchip Technology Inc., Flexxon Pte Ltd., Nantero, Inc., ATP Electronics, Inc., Renesas Electronics Corporation, Toshiba Corporation, Viking Technologies, Inc., Samsung Electronics Co., Ltd., Pure Storage, Inc., and CrossBar, Inc..

Market Segmentation & Coverage

This research report categorizes the Non-Volatile Memory Market to forecast the revenues and analyze trends in each of the following sub-markets:

  • Based on Classification, market is studied across Ferroelectric Random-access Memory, Magnetic Random-access Memory, NRAM, Phase-change Memory, Quantum-dots, ReRAM/CBRAM, and RRAM. The Magnetic Random-access Memory is further studied across DRAM, FLASH, and SRAM. The DRAM is further studied across Millipede. The FLASH is further studied across NAND Flash and NOR Flash. The SRAM is further studied across nvSRAM. The RRAM is further studied across EPROM and SPROM.
  • Based on Wafer Size, market is studied across 200mm, 300mm, and 450mm.
  • Based on End-User, market is studied across Agricultural, Automotive & Transportation, Consumer Electronics, Energy & Power, Enterprise Storage, Healthcare, Industrial, Military & Aerospace, Retail & Consumer Goods, and Telecommunication.
  • Based on Region, market is studied across Americas, Asia-Pacific, and Europe, Middle East & Africa. The Americas is further studied across Argentina, Brazil, Canada, Mexico, and United States. The United States is further studied across California, Florida, Illinois, New York, Ohio, Pennsylvania, and Texas. The Asia-Pacific is further studied across Australia, China, India, Indonesia, Japan, Malaysia, Philippines, Singapore, South Korea, Taiwan, Thailand, and Vietnam. The Europe, Middle East & Africa is further studied across Denmark, Egypt, Finland, France, Germany, Israel, Italy, Netherlands, Nigeria, Norway, Poland, Qatar, Russia, Saudi Arabia, South Africa, Spain, Sweden, Switzerland, Turkey, United Arab Emirates, and United Kingdom.

The report offers a comprehensive analysis of the market, covering key focus areas:

1. Market Penetration: A detailed review of the current market environment, including extensive data from top industry players, evaluating their market reach and overall influence.

2. Market Development: Identifies growth opportunities in emerging markets and assesses expansion potential in established sectors, providing a strategic roadmap for future growth.

3. Market Diversification: Analyzes recent product launches, untapped geographic regions, major industry advancements, and strategic investments reshaping the market.

4. Competitive Assessment & Intelligence: Provides a thorough analysis of the competitive landscape, examining market share, business strategies, product portfolios, certifications, regulatory approvals, patent trends, and technological advancements of key players.

5. Product Development & Innovation: Highlights cutting-edge technologies, R&D activities, and product innovations expected to drive future market growth.

The report also answers critical questions to aid stakeholders in making informed decisions:

1. What is the current market size, and what is the forecasted growth?

2. Which products, segments, and regions offer the best investment opportunities?

3. What are the key technology trends and regulatory influences shaping the market?

4. How do leading vendors rank in terms of market share and competitive positioning?

5. What revenue sources and strategic opportunities drive vendors' market entry or exit strategies?

Table of Contents

1. Preface

  • 1.1. Objectives of the Study
  • 1.2. Market Segmentation & Coverage
  • 1.3. Years Considered for the Study
  • 1.4. Currency & Pricing
  • 1.5. Language
  • 1.6. Stakeholders

2. Research Methodology

  • 2.1. Define: Research Objective
  • 2.2. Determine: Research Design
  • 2.3. Prepare: Research Instrument
  • 2.4. Collect: Data Source
  • 2.5. Analyze: Data Interpretation
  • 2.6. Formulate: Data Verification
  • 2.7. Publish: Research Report
  • 2.8. Repeat: Report Update

3. Executive Summary

4. Market Overview

5. Market Insights

  • 5.1. Market Dynamics
    • 5.1.1. Drivers
      • 5.1.1.1. Rapid Digitalization and Demand for Storage Applications
      • 5.1.1.2. Shift From Hard State Drive to Solid State Drives
    • 5.1.2. Restraints
      • 5.1.2.1. High Cost and Limited Lifetime of Non-Volatile Memory
    • 5.1.3. Opportunities
      • 5.1.3.1. Introduction of Advanced Industrial Grade Flash Memory
      • 5.1.3.2. Penetration of Emerging Non-Volatile Memory Devices
    • 5.1.4. Challenges
      • 5.1.4.1. Performance Issues Associated with Non-Volatile Memory Devices
  • 5.2. Market Segmentation Analysis
    • 5.2.1. Classification: Growing usage of ferroelectric random-access memory (FeRAM) for its fast read and write speeds
    • 5.2.2. End-User: Rising potential of non-volatile memory across the energy & power sector that can withstand various temperatures and electrical disturbances
  • 5.3. Porter's Five Forces Analysis
    • 5.3.1. Threat of New Entrants
    • 5.3.2. Threat of Substitutes
    • 5.3.3. Bargaining Power of Customers
    • 5.3.4. Bargaining Power of Suppliers
    • 5.3.5. Industry Rivalry
  • 5.4. PESTLE Analysis
    • 5.4.1. Political
    • 5.4.2. Economic
    • 5.4.3. Social
    • 5.4.4. Technological
    • 5.4.5. Legal
    • 5.4.6. Environmental
  • 5.5. Client Customization

6. Non-Volatile Memory Market, by Classification

  • 6.1. Introduction
  • 6.2. Ferroelectric Random-access Memory
  • 6.3. Magnetic Random-access Memory
    • 6.3.1. DRAM
      • 6.3.1.1. Millipede
    • 6.3.2. FLASH
      • 6.3.2.1. NAND Flash
      • 6.3.2.2. NOR Flash
    • 6.3.3. SRAM
      • 6.3.3.1. nvSRAM
  • 6.4. NRAM
  • 6.5. Phase-change Memory
  • 6.6. Quantum-dots
  • 6.7. ReRAM/CBRAM
  • 6.8. RRAM
    • 6.8.1. EPROM
    • 6.8.2. SPROM

7. Non-Volatile Memory Market, by Wafer Size

  • 7.1. Introduction
  • 7.2. 200mm
  • 7.3. 300mm
  • 7.4. 450mm

8. Non-Volatile Memory Market, by End-User

  • 8.1. Introduction
  • 8.2. Agricultural
  • 8.3. Automotive & Transportation
  • 8.4. Consumer Electronics
  • 8.5. Energy & Power
  • 8.6. Enterprise Storage
  • 8.7. Healthcare
  • 8.8. Industrial
  • 8.9. Military & Aerospace
  • 8.10. Retail & Consumer Goods
  • 8.11. Telecommunication

9. Americas Non-Volatile Memory Market

  • 9.1. Introduction
  • 9.2. Argentina
  • 9.3. Brazil
  • 9.4. Canada
  • 9.5. Mexico
  • 9.6. United States

10. Asia-Pacific Non-Volatile Memory Market

  • 10.1. Introduction
  • 10.2. Australia
  • 10.3. China
  • 10.4. India
  • 10.5. Indonesia
  • 10.6. Japan
  • 10.7. Malaysia
  • 10.8. Philippines
  • 10.9. Singapore
  • 10.10. South Korea
  • 10.11. Taiwan
  • 10.12. Thailand
  • 10.13. Vietnam

11. Europe, Middle East & Africa Non-Volatile Memory Market

  • 11.1. Introduction
  • 11.2. Denmark
  • 11.3. Egypt
  • 11.4. Finland
  • 11.5. France
  • 11.6. Germany
  • 11.7. Israel
  • 11.8. Italy
  • 11.9. Netherlands
  • 11.10. Nigeria
  • 11.11. Norway
  • 11.12. Poland
  • 11.13. Qatar
  • 11.14. Russia
  • 11.15. Saudi Arabia
  • 11.16. South Africa
  • 11.17. Spain
  • 11.18. Sweden
  • 11.19. Switzerland
  • 11.20. Turkey
  • 11.21. United Arab Emirates
  • 11.22. United Kingdom

12. Competitive Landscape

  • 12.1. Market Share Analysis, 2023
  • 12.2. FPNV Positioning Matrix, 2023
  • 12.3. Competitive Scenario Analysis
    • 12.3.1. Fujitsu Launches Automotive Grade I2C-interface 512Kbit FeRAM with 125°C Operation
    • 12.3.2. NXP and TSMC to Deliver Industry's First Automotive 16 nm FinFET Embedded MRAM
    • 12.3.3. Infineon Enables Next-Generation Automotive E/E Architectures With Industry's First LPDDR Flash Memory

Companies Mentioned

  • 1. Infineon Technologies AG
  • 2. Western Digital Corporation
  • 3. Synopsys, Inc.
  • 4. Intel Corporation
  • 5. Hewlett Packard Enterprise Development LP
  • 6. SMART Modular Technologies, Inc.
  • 7. Windbond Electronics Corporation
  • 8. Micron Technology, Inc.
  • 9. Avalanche Technology Inc.
  • 10. SK hynix Co., Ltd.
  • 11. SkyHigh Memory Limited
  • 12. KIOXIA Holdings Corporation
  • 13. Everspin Technologies, Inc.
  • 14. Fujitsu Limited
  • 15. NVMdurance Ltd.
  • 16. STMicroelectronics N.V.
  • 17. Microchip Technology Inc.
  • 18. Flexxon Pte Ltd.
  • 19. Nantero, Inc.
  • 20. ATP Electronics, Inc.
  • 21. Renesas Electronics Corporation
  • 22. Toshiba Corporation
  • 23. Viking Technologies, Inc.
  • 24. Samsung Electronics Co., Ltd.
  • 25. Pure Storage, Inc.
  • 26. CrossBar, Inc.
ºñ±³¸®½ºÆ®
0 °ÇÀÇ »óǰÀ» ¼±Åà Áß
»óǰ ºñ±³Çϱâ
Àüü»èÁ¦