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¼¼°èÀÇ FinFET ±â¼ú ½ÃÀå : À¯Çü, ±â¼ú, ¿ëµµ, ÃÖÁ¾ »ç¿ëÀÚº° ¿¹Ãø(2025-2030³â)

FinFET Technology Market by Type (Bulk FinFETS, Independent Gate, Shorted Gate), Technology (10nm, 14nm, 16nm), Application, End-User - Global Forecast 2025-2030

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¡á º¸°í¼­¿¡ µû¶ó ÃֽŠÁ¤º¸·Î ¾÷µ¥ÀÌÆ®ÇÏ¿© º¸³»µå¸³´Ï´Ù. ¹è¼ÛÀÏÁ¤Àº ¹®ÀÇÇØ Áֽñ⠹ٶø´Ï´Ù.

FinFET ±â¼ú ½ÃÀåÀº 2023³â¿¡ 413¾ï 2,000¸¸ ´Þ·¯·Î Æò°¡µÇ¾ú°í, 2024³â¿¡´Â 485¾ï ´Þ·¯¿¡ À̸¦ °ÍÀ¸·Î ¿¹ÃøµÇ¸ç, CAGR 18.20%·Î ¼ºÀåÇϸç, 2030³â¿¡´Â 1,332¾ï 3,000¸¸ ´Þ·¯¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù.

FinFET ±â¼ú(Fin Field-Effect Transistor)Àº ¹ÝµµÃ¼ °³¹ß¿¡ ¸Å¿ì Áß¿äÇÑ ¸ÖƼ °ÔÀÌÆ® µð¹ÙÀ̽ºÀÇ ÀÏÁ¾À¸·Î, Àü·ù È帧 Á¦¾î¸¦ °³¼±ÇÏ°í ±âÁ¸ÀÇ Æò¸é Æ®·£Áö½ºÅÍ¿¡¼­ ÀϹÝÀûÀÎ ¹®Á¦¿´´ø ´Ü ä³Î È¿°ú¸¦ ÁÙÀÔ´Ï´Ù. FinFETÀÇ Çʿ伺Àº »ç¹°ÀÎÅͳÝ(IoT), ÀΰøÁö´É(AI), °í¼º´É ÄÄÇ»ÆÃ ºÐ¾ßÀÇ Áøº¸¿¡ ÈûÀÔ¾î ÀüÀÚ±â±â¿¡¼­ º¸´Ù ³ôÀº È¿À²°ú ¼º´É¿¡ ´ëÇÑ ¼ö¿ä°¡ ³ô¾ÆÁö°í Àֱ⠶§¹®ÀÔ´Ï´Ù. ÀÌ ±â¼úÀº ¿¡³ÊÁö È¿À²ÀÌ ³ôÀº °í¼Ó ÀüÀÚ±â±â¿¡ ´ëÇÑ ¼ö¿ä°¡ ³ôÀº ÀÚµ¿Â÷, °¡Àü, ¸ð¹ÙÀÏ Åë½Å µî ´Ù¾çÇÑ »ê¾÷¿¡¼­ ÀÀ¿ëµÇ°í ÀÖ½À´Ï´Ù. ÃÖÁ¾ ¿ëµµÀÇ ¹üÀ§´Â ÁÖ·Î ÁýÀû ȸ·Î Á¦Á¶¸¦ Æ÷ÇÔÇϸç, FinFET ¼³°è´Â º¸´Ù ÀÛ°í ºü¸£¸ç Àü·Â È¿À²ÀÌ ³ôÀº ĨÀ» ±¸ÇöÇÕ´Ï´Ù. FinFET ½ÃÀåÀÇ ÁÖ¿ä ¼ºÀå ÃËÁø¿äÀÎÀ¸·Î´Â ±Þ¼ÓÇÑ ±â¼ú Áøº¸, ½ÅÈï ½ÃÀå äÅà Ȯ´ë, ÁýÀû ȸ·ÎÀÇ ¼ÒÇüÈ­ ¹× ¼º´É Çâ»óÀÇ Áö¼ÓÀûÀÎ ÃßÁø µîÀÌ ÀÖ½À´Ï´Ù. ÀÌ ½ÃÀåÀÇ ÃÖ±Ù ºñÁî´Ï½º ±âȸ´Â AI °¡¼Ó±â ¹× 5G ±â¼ú·ÎÀÇ Àü°³ È®´ë¸¦ Áß½ÉÀ¸·Î Àü°³µÇ°í ÀÖ½À´Ï´Ù. ±â¾÷µéÀº ÀÌ·¯ÇÑ ¿ëµµ¿¡ FinFETÀÇ ´É·ÂÀ» Ȱ¿ëÇϱâ À§ÇØ R&D¿¡ ÅõÀÚÇϰí Àü·«Àû ÆÄÆ®³Ê½ÊÀ» ÅëÇØ Çõ½Å°ú »õ·Î¿î ½ÃÀåÀ¸·ÎÀÇ È®´ë¸¦ ÃËÁøÇÒ °ÍÀ» ±ÇÀåÇÕ´Ï´Ù. ±×·¯³ª FinFETÀÇ Á¦Á¶ ºñ¿ë »ó½Â, 5nm ÀÌÇÏÀÇ ¹Ì¼¼È­ ¹®Á¦, »õ·Î¿î Á¦Á¶ °øÀå¿¡ ÇÊ¿äÇÑ ¸¹Àº ÀÚº» ÁöÃâ µîÀÇ °úÁ¦µµ ³²¾Æ ÀÖ½À´Ï´Ù. ±â¼ú Çõ½Å°ú Á¶»ç¿¡ ÃÖÀûÀÇ ºÐ¾ß·Î´Â ºñ¿ë Àý°¨À» À§ÇÑ Á¦Á¶ ±â¼ú °³¼±, ¹Ì¼¼È­ÀÇ °úÁ¦¸¦ ±Øº¹Çϱâ À§ÇÑ ¼³°è ¼ö¹ý °­È­, ¾çÀÚ ÄÄÇ»ÆÃ ¹× ±âŸ Ư¼ö ÄÄÇ»ÆÃ ºÐ¾ß¿¡¼­ FinFET ¿ëµµ È®´ë µîÀ» µé ¼ö ÀÖ½À´Ï´Ù. ½ÃÀåÀº °è¼Ó ¿ªµ¿ÀûÀÌ¸ç ±â¼úÀû ¿ìÀ§¿Í ºñ¿ë È¿À²¼ºÀ» Ãß±¸ÇÏ´Â ±â¾÷ÀÇ ÅëÇÕÀÌ ÁøÇàµÇ´Â °æÇâÀÌ ÀÖÀ¸¸ç, ÁøÈ­ÇÏ´Â ¾÷°è Ç¥Áذú ¼ÒºñÀÚ ¼ö¿ä¿¡ ÀûÀÀÇÏ´Â À¯¿¬ÇÑ Àü·«ÀÌ ¿ä±¸µÇ°í ÀÖ½À´Ï´Ù.

ÁÖ¿ä ½ÃÀå Åë°è
±âÁسâ(2023) 413¾ï 2,000¸¸ ´Þ·¯
ÃßÁ¤³â(2024) 485¾ï ´Þ·¯
¿¹Ãø³â(2030) 1,332¾ï 3,000¸¸ ´Þ·¯
CAGR(%) 18.20%

½ÃÀå ¿ªÇÐ: ºü¸£°Ô ÁøÈ­ÇÏ´Â FinFET ±â¼ú ½ÃÀåÀÇ ÁÖ¿ä ½ÃÀå ÀλçÀÌÆ® °ø°³

FinFET ±â¼ú ½ÃÀåÀº ¼ö¿ä ¹× °ø±ÞÀÇ ¿ªµ¿ÀûÀÎ »óÈ£ÀÛ¿ë¿¡ ÀÇÇØ º¯¸ð¸¦ ÀÌ·ç°í ÀÖ½À´Ï´Ù. ±×¸®°í »õ·Î¿î ºñÁî´Ï½º ±âȸ ȹµæ¿¡ ´ëºñÇϽʽÿÀ. ÀÌ·¯ÇÑ µ¿ÇâÀ» Á¾ÇÕÀûÀ¸·Î ÆÄ¾ÇÇÔÀ¸·Î½á ±â¾÷Àº Á¤Ä¡Àû, Áö¸®Àû, ±â¼úÀû, »çȸÀû, °æÁ¦Àû ¿µ¿ª¿¡ °ÉÄ£ ´Ù¾çÇÑ À§ÇèÀ» ¿ÏÈ­ÇÒ ¼ö ÀÖÀ¸¸ç, ¼ÒºñÀÚ Çൿ°ú ±×°ÍÀÌ Á¦Á¶ ºñ¿ë°ú ±¸¸Å µ¿Çâ¿¡ ¹ÌÄ¡´Â ¿µÇâÀ» ´õ ¸íÈ®ÇÏ°Ô ÀÌÇØÇÒ ¼ö ÀÖ½À´Ï´Ù.

  • ½ÃÀå ¼ºÀå ÃËÁø¿äÀÎ
    • ÀüÀÚ±â±â »ý»ê ¹× ÆÇ¸Å Áõ°¡
    • ÁýÀû ȸ·Î(IC)ÀÇ °í¹ÐµµÈ­¸¦ À§ÇÑ ÀüÀÚ ±â±â¿¡ À־ÀÇ FinFET ÀÌ¿ë Áõ°¡
    • ¹ÝµµÃ¼ Á¦Á¶¿¡ À־ÀÇ FinFET ±â¼úÀÇ ÀÀ¿ë
  • ½ÃÀå ¼ºÀå ¾ïÁ¦¿äÀÎ
    • ³ôÀº Á¦Á¶ ºñ¿ë°ú ¸Å¿ì ³ôÀº Ä¿ÆÐ½ÃÅϽº
  • ½ÃÀå ±âȸ
    • ¿ìÁÖ ¿ëµµ¿¡¼­ÀÇ FinFET ±â¼úÀÇ ÀÌ¿ë È®´ë
    • Àü·Â ¹× RF ¿ëµµÀ» À§ÇÑ GaN FinFET ¹× Æ®¶óÀ̰ÔÀÌÆ® µð¹ÙÀ̽º °³¹ß
  • ½ÃÀåÀÇ °úÁ¦
    • ¼³°è ¹× Á¦Á¶ÀÇ º¹À⼺

Porter's Five Force : FinFET ±â¼ú ½ÃÀåÀ» Ž»öÇÏ´Â Àü·« µµ±¸

Porter's Five Force Framework´Â ½ÃÀå »óȲ°æÀï ±¸µµ¸¦ ÆÄ¾ÇÇÏ´Â Áß¿äÇÑ µµ±¸ÀÔ´Ï´Ù. ±â¾÷ÀÌ ½ÃÀå ³» ¼¼·Âµµ¸¦ Æò°¡ÇÏ°í ½Å±Ô »ç¾÷ÀÇ ¼öÀͼºÀ» ÆÇ´ÜÇÒ ¼ö ÀÖµµ·Ï µµ¿ÍÁÝ´Ï´Ù. ´ç½ÅÀº ´õ °­ÀÎÇÑ ½ÃÀå¿¡¼­ Æ÷Áö¼Å´×À» º¸ÀåÇÒ ¼ö ÀÖ½À´Ï´Ù.

PESTLE ºÐ¼® : FinFET ±â¼ú ½ÃÀå¿¡¼­ ¿ÜºÎ ¿µÇâÀ» ÆÄ¾Ç

¿ÜºÎ °Å½Ã ȯ°æ ¿äÀÎÀº FinFET ±â¼ú ½ÃÀåÀÇ ¼º°ú ¿ªÇÐÀ» Çü¼ºÇÏ´Â µ¥ ¸Å¿ì Áß¿äÇÑ ¿ªÇÒÀ»ÇÕ´Ï´Ù. ¿ì¸®´Â PESTLE ¿äÀÎÀ» Á¶»çÇÔÀ¸·Î½á ±â¾÷Àº ÀáÀçÀû À§Çè°ú ±âȸ¸¦ ´õ Àß ÀÌÇØÇÒ ¼ö ÀÖ½À´Ï´Ù. ¾ÕÀ» ³»´Ùº» Àû±ØÀûÀÎ ÀÇ»ç°áÁ¤À» ÇÒ Áغñ°¡ µÇ¾î ÀÖ½À´Ï´Ù.

½ÃÀå Á¡À¯À² ºÐ¼® : FinFET ±â¼ú ½ÃÀå¿¡¼­ °æÀï ±¸µµ ÆÄ¾Ç

FinFET ±â¼ú ½ÃÀåÀÇ »ó¼¼ÇÑ ½ÃÀå Á¡À¯À² ºÐ¼®À» ÅëÇØ °ø±Þ¾÷üÀÇ ¼º°ú¸¦ Á¾ÇÕÀûÀ¸·Î Æò°¡ÇÒ ¼ö ÀÖ½À´Ï´Ù. ÀÌ ºÐ¼®Àº ½ÃÀå ÁýÁß, ´ÜÆíÈ­ ¹× ÅëÇÕ µ¿ÇâÀ» ¹àÇô³»°í °ø±Þ¾÷ü´Â °æÀïÀÌ Ä¡¿­ ÇØÁü¿¡ µû¶ó ÀÚ»çÀÇ ÁöÀ§¸¦ ³ôÀÌ´Â Àü·«Àû ÀÇ»ç °áÁ¤À» ³»¸®´Â µ¥ ÇÊ¿äÇÕ´Ï´Ù. Áö½ÄÀ» ¾òÀ» ¼ö ÀÖ½À´Ï´Ù.

FPNV Æ÷Áö¼Å´× ¸ÅÆ®¸¯½º : FinFET ±â¼ú ½ÃÀå¿¡¼­ °ø±Þ¾÷üÀÇ ¼º´É Æò°¡

FPNV Æ÷Áö¼Å´× ¸ÅÆ®¸¯½º´Â FinFET ±â¼ú ½ÃÀå¿¡¼­ º¥´õ¸¦ Æò°¡ÇÏ´Â Áß¿äÇÑ µµ±¸ÀÔ´Ï´Ù. ±âº» °áÁ¤À» ³»¸± ¼ö ÀÖ½À´Ï´Ù. ³× °¡Áö »çºÐ¸éÀ» ÅëÇØ º¥´õ¸¦ ¸íÈ®Çϰí Á¤È®ÇÏ°Ô ºÐ·ùÇϰí Àü·« ¸ñÇ¥¿¡ °¡Àå ÀûÇÕÇÑ ÆÄÆ®³Ê ¹× ¼Ö·ç¼ÇÀ» ÆÄ¾ÇÇÒ ¼ö ÀÖ½À´Ï´Ù.

Àü·« ºÐ¼® ¹× Ãßõ : FinFET ±â¼ú ½ÃÀå¿¡¼­ ¼º°øÀ» À§ÇÑ ±æÀ» ±×¸®±â

FinFET ±â¼ú ½ÃÀåÀÇ Àü·« ºÐ¼®Àº ¼¼°è ½ÃÀå¿¡¼­ÀÇ ÇÁ·¹Á𽺠°­È­¸¦ ¸ñÇ¥·Î ÇÏ´Â ±â¾÷¿¡ ÇʼöÀûÀÎ ¿ä¼ÒÀÔ´Ï´Ù. ÀÌ Á¢±Ù¹ýÀ» ÅëÇØ °æÀï ±¸µµ¿¡¼­ °úÁ¦¸¦ ±Øº¹ÇÏ°í »õ·Î¿î ºñÁî´Ï½º ±âȸ¸¦ Ȱ¿ëÇÏ¿© Àå±âÀûÀÎ ¼º°øÀ» °ÅµÑ ¼ö Àִ üÁ¦¸¦ ±¸ÃàÇÒ ¼ö ÀÖ½À´Ï´Ù.

ÀÌ º¸°í¼­´Â ÁÖ¿ä °ü½É ºÐ¾ß¸¦ Æ÷°ýÇÏ´Â ½ÃÀåÀÇ Á¾ÇÕÀûÀÎ ºÐ¼®À» Á¦°øÇÕ´Ï´Ù.

1. ½ÃÀå ħÅõ: ÇöÀç ½ÃÀå ȯ°æÀÇ »ó¼¼ÇÑ °ËÅä, ÁÖ¿ä ±â¾÷ÀÇ ±¤¹üÀ§ÇÑ µ¥ÀÌÅÍ, ½ÃÀå µµ´Þ¹üÀ§ ¹× Àü¹ÝÀûÀÎ ¿µÇâ·Â Æò°¡.

2. ½ÃÀå °³Ã´µµ: ½ÅÈï ½ÃÀåÀÇ ¼ºÀå ±âȸ¸¦ ÆÄ¾ÇÇÏ°í ±âÁ¸ ºÐ¾ßÀÇ È®Àå °¡´É¼ºÀ» Æò°¡ÇÏ¸ç ¹Ì·¡ ¼ºÀåÀ» À§ÇÑ Àü·«Àû ·Îµå¸ÊÀ» Á¦°øÇÕ´Ï´Ù.

3. ½ÃÀå ´Ù¾çÈ­: ÃÖ±Ù Á¦Ç° Ãâ½Ã, ¹Ì°³Ã´ Áö¿ª, ¾÷°èÀÇ ÁÖ¿ä Áøº¸, ½ÃÀåÀ» Çü¼ºÇÏ´Â Àü·«Àû ÅõÀÚ¸¦ ºÐ¼®ÇÕ´Ï´Ù.

4. °æÀï Æò°¡ ¹× Á¤º¸ : °æÀï ±¸µµ¸¦ öÀúÈ÷ ºÐ¼®ÇÏ¿© ½ÃÀå Á¡À¯À², »ç¾÷ Àü·«, Á¦Ç° Æ÷Æ®Æú¸®¿À, ÀÎÁõ, ±ÔÁ¦ ´ç±¹ ½ÂÀÎ, ƯÇã µ¿Çâ, ÁÖ¿ä ±â¾÷ÀÇ ±â¼ú Áøº¸ µîÀ» °ËÁõÇÕ´Ï´Ù.

5. Á¦Ç° °³¹ß ¹× Çõ½Å : ¹Ì·¡ ½ÃÀå ¼ºÀåÀ» °¡¼ÓÇÒ °ÍÀ¸·Î ¿¹»óµÇ´Â ÃÖ÷´Ü ±â¼ú, R&D Ȱµ¿, Á¦Ç° Çõ½ÅÀ» °­Á¶ÇÕ´Ï´Ù.

¶ÇÇÑ ÀÌÇØ°ü°èÀÚ°¡ ÃæºÐÇÑ Á¤º¸¸¦ ¾ò°í ÀÇ»ç°áÁ¤À» ÇÒ ¼ö ÀÖµµ·Ï Áß¿äÇÑ Áú¹®¿¡ ´ë´äÇϰí ÀÖ½À´Ï´Ù.

1. ÇöÀç ½ÃÀå ±Ô¸ð¿Í ÇâÈÄ ¼ºÀå ¿¹ÃøÀº?

2. ÃÖ°íÀÇ ÅõÀÚ ±âȸ¸¦ Á¦°øÇÏ´Â Á¦Ç°, ºÎ¹® ¹× Áö¿ªÀº ¾îµðÀԴϱî?

3. ½ÃÀåÀ» Çü¼ºÇÏ´Â ÁÖ¿ä ±â¼ú µ¿Çâ°ú ±ÔÁ¦ÀÇ ¿µÇâÀº?

4. ÁÖ¿ä º¥´õÀÇ ½ÃÀå Á¡À¯À²°ú °æÀï Æ÷Áö¼ÇÀº?

5. º¥´õ ½ÃÀå ÁøÀÔ¡¤Ã¶¼ö Àü·«ÀÇ ¿øµ¿·ÂÀÌ µÇ´Â ¼öÀÍ¿ø°ú Àü·«Àû ±âȸ´Â ¹«¾ùÀΰ¡?

¸ñÂ÷

Á¦1Àå ¼­¹®

Á¦2Àå Á¶»ç ¹æ¹ý

Á¦3Àå ÁÖ¿ä ¿ä¾à

Á¦4Àå ½ÃÀå °³¿ä

Á¦5Àå ½ÃÀå ÀλçÀÌÆ®

  • ½ÃÀå ¿ªÇÐ
    • ¼ºÀå ÃËÁø¿äÀÎ
      • ÀüÀÚ±â±â »ý»ê ¹× ÆÇ¸Å Áõ°¡
      • ÀüÀÚ ±â±â¿¡¼­ÀÇ FinFETÀÇ ÀÌ¿ë Áõ°¡¿¡ ÀÇÇØ ÁýÀû ȸ·Î(IC)ÀÇ ¹Ðµµ°¡ Çâ»ó
      • ¹ÝµµÃ¼ Á¦Á¶¿¡ À־ÀÇ FinFET ±â¼úÀÇ ÀÀ¿ë
    • ¾ïÁ¦¿äÀÎ
      • Á¦Á¶ºñ¿ëÀÌ ³ô°í Á¤Àü¿ë·®ÀÌ ¸Å¿ì ³ô´Ù
    • ±âȸ
      • ¿ìÁÖ ¿ëµµ¿¡¼­ÀÇ FinFET ±â¼úÀÇ ÀÌ¿ë Áõ°¡
      • Àü·Â ¹× RF ¿ëµµÀ» À§ÇÑ GaN FinFET ¹× Æ®¶óÀ̰ÔÀÌÆ® µð¹ÙÀ̽º °³¹ß
    • °úÁ¦
      • ¼³°è¿Í Á¦Á¶ÀÇ º¹À⼺ÀÌ ÇöÀúÇØÁø´Ù
  • ½ÃÀå ¼¼ºÐÈ­ ºÐ¼®
  • Porter's Five Forces ºÐ¼®
  • PESTEL ºÐ¼®
    • Á¤Ä¡
    • °æÁ¦
    • »çȸ
    • ±â¼ú
    • ¹ý·ü
    • ȯ°æ

Á¦6Àå FinFET ±â¼ú ½ÃÀå : À¯Çüº°

  • ¹úÅ© FinFET
  • µ¶¸³ °ÔÀÌÆ®
  • °ÔÀÌÆ® ¼îÆ®
  • SOIÇÉ FET

Á¦7Àå FinFET ±â¼ú ½ÃÀå : ±â¼úº°

  • 10nm
  • 14nm
  • 16nm
  • 20nm
  • 3nm
  • 5nm
  • 7nm

Á¦8Àå FinFET ±â¼ú ½ÃÀå : ¿ëµµº°

  • Áß¾Óó¸®ÀåÄ¡(CPU)
  • Çʵå ÇÁ·Î±×·¡¸Óºí °ÔÀÌÆ® ¾î·¹ÀÌ(FPGA)
  • ±×·¡ÇÈ ÇÁ·Î¼¼½Ì À¯´Ö(GPU)
  • ³×Æ®¿öÅ© ÇÁ·Î¼¼¼­
  • ½Ã½ºÅÛ ¿ÂĨ(SoC)

Á¦9Àå FinFET ±â¼ú ½ÃÀå : ÃÖÁ¾ »ç¿ëÀÚº°

  • ÀÚµ¿Â÷
  • °¡Àü
  • ÇÏÀÌ¿£µå ³×Æ®¿öÅ©
  • ÈÞ´ë

Á¦10Àå ¾Æ¸Þ¸®Ä«ÀÇ FinFET ±â¼ú ½ÃÀå

  • ¾Æ¸£ÇîÆ¼³ª
  • ºê¶óÁú
  • ij³ª´Ù
  • ¸ß½ÃÄÚ
  • ¹Ì±¹

Á¦11Àå ¾Æ½Ã¾ÆÅÂÆò¾çÀÇ FinFET ±â¼ú ½ÃÀå

  • È£ÁÖ
  • Áß±¹
  • Àεµ
  • Àεµ³×½Ã¾Æ
  • ÀϺ»
  • ¸»·¹À̽þÆ
  • Çʸ®ÇÉ
  • ½Ì°¡Æ÷¸£
  • Çѱ¹
  • ´ë¸¸
  • ű¹
  • º£Æ®³²

Á¦12Àå À¯·´¡¤Áßµ¿ ¹× ¾ÆÇÁ¸®Ä«ÀÇ FinFET ±â¼ú ½ÃÀå

  • µ§¸¶Å©
  • ÀÌÁýÆ®
  • Çɶõµå
  • ÇÁ¶û½º
  • µ¶ÀÏ
  • À̽º¶ó¿¤
  • ÀÌÅ»¸®¾Æ
  • ³×´ú¶õµå
  • ³ªÀÌÁö¸®¾Æ
  • ³ë¸£¿þÀÌ
  • Æú¶õµå
  • īŸ¸£
  • ·¯½Ã¾Æ
  • »ç¿ìµð¾Æ¶óºñ¾Æ
  • ³²¾ÆÇÁ¸®Ä«
  • ½ºÆäÀÎ
  • ½º¿þµ§
  • ½ºÀ§½º
  • ÅÍŰ
  • ¾Æ¶ø¿¡¹Ì¸®Æ®(UAE)
  • ¿µ±¹

Á¦13Àå °æÀï ±¸µµ

  • ½ÃÀå Á¡À¯À² ºÐ¼® 2023
  • FPNV Æ÷Áö¼Å´× ¸ÅÆ®¸¯½º, 2023
  • °æÀï ½Ã³ª¸®¿À ºÐ¼®
  • Àü·« ºÐ¼®°ú Á¦¾È

±â¾÷ ¸ñ·Ï

  • Advanced Micro Devices, Inc.
  • Ansys Inc.
  • Arm Limited
  • Diodes Incorporated
  • Faraday Technology Corporation
  • Finwave Semiconductor, Inc.
  • GlobalFoundries Inc.
  • Huawei Technologies Co. Ltd.
  • Infineon Technologies AG
  • Intel Corporation
  • International Business Machines Corporation
  • Keysight Technologies, Inc.
  • MediaTek, Inc.
  • NVIDIA Corporation
  • NXP Semiconductors NV
  • Qualcomm, Inc.
  • Rambus Incorporated
  • Renesas Electronics Corporation
  • Rohm Co., Ltd.
  • Samsung Electronics Co., Ltd.
  • Semiconductor Manufacturing International Corporation
  • Taiwan Semiconductor Manufacturing Company Limited
  • Texas Instruments Incorporated
  • Toshiba Corporation
  • United Microelectronics Corporation
JHS 24.12.17

The FinFET Technology Market was valued at USD 41.32 billion in 2023, expected to reach USD 48.50 billion in 2024, and is projected to grow at a CAGR of 18.20%, to USD 133.23 billion by 2030.

FinFET technology, or Fin Field-Effect Transistor, is a type of multigate device that is crucial for semiconductor development, providing improved control over current flow and reducing short-channel effects, a common issue in traditional planar transistors. The necessity for FinFET arises due to the increasing demand for higher efficiency and performance in electronic devices, driven by advancements in the Internet of Things (IoT), Artificial Intelligence (AI), and high-performance computing sectors. This technology finds applications across various industries such as automotive, consumer electronics, and mobile communications, where there is a high demand for energy-efficient, high-speed electronic devices. The end-use scope predominantly encompasses integrated circuit manufacturing, where FinFET designs enable more compact, faster, and power-efficient chips. Key growth drivers in the FinFET market include rapid technological advancements, increased adoption in emerging markets, and the continual push for miniaturization and enhanced performance of integrated circuits. Recent opportunities present in the market revolve around the increasing deployment in AI accelerators and 5G technology. Companies are advised to invest in R&D to leverage FinFET's capabilities for these applications, with strategic partnerships fostering innovation and expansion in new markets. However, challenges persist such as the high cost of manufacturing FinFETs, scaling issues below 5nm, and significant capital expenditure required for new fabrication plants. The best areas for innovation and research include improving manufacturing techniques to reduce costs, enhancing design methodologies to overcome scaling challenges, and expanding FinFET applications in quantum computing and other specialized computing areas. The market remains dynamic, with a trend towards consolidation as companies strive for technological edge and cost efficiencies, requiring a flexible strategy that adapts to evolving industry standards and consumer demands.

KEY MARKET STATISTICS
Base Year [2023] USD 41.32 billion
Estimated Year [2024] USD 48.50 billion
Forecast Year [2030] USD 133.23 billion
CAGR (%) 18.20%

Market Dynamics: Unveiling Key Market Insights in the Rapidly Evolving FinFET Technology Market

The FinFET Technology Market is undergoing transformative changes driven by a dynamic interplay of supply and demand factors. Understanding these evolving market dynamics prepares business organizations to make informed investment decisions, refine strategic decisions, and seize new opportunities. By gaining a comprehensive view of these trends, business organizations can mitigate various risks across political, geographic, technical, social, and economic domains while also gaining a clearer understanding of consumer behavior and its impact on manufacturing costs and purchasing trends.

  • Market Drivers
    • Increase in production and sales of electronic devices
    • Rising utilization of FinFET in electronic devices to increase the density of integrated circuits(ICs)
    • Application of FinFET technology in the manufacturing of semiconductors
  • Market Restraints
    • High fabrication cost and very high capacitance
  • Market Opportunities
    • Rising utilization of FinFET technologies in space applications
    • Development of GaN FinFETs and tri-gate devices for power and RF applications
  • Market Challenges
    • Significant design and manufacturing complexities

Porter's Five Forces: A Strategic Tool for Navigating the FinFET Technology Market

Porter's five forces framework is a critical tool for understanding the competitive landscape of the FinFET Technology Market. It offers business organizations with a clear methodology for evaluating their competitive positioning and exploring strategic opportunities. This framework helps businesses assess the power dynamics within the market and determine the profitability of new ventures. With these insights, business organizations can leverage their strengths, address weaknesses, and avoid potential challenges, ensuring a more resilient market positioning.

PESTLE Analysis: Navigating External Influences in the FinFET Technology Market

External macro-environmental factors play a pivotal role in shaping the performance dynamics of the FinFET Technology Market. Political, Economic, Social, Technological, Legal, and Environmental factors analysis provides the necessary information to navigate these influences. By examining PESTLE factors, businesses can better understand potential risks and opportunities. This analysis enables business organizations to anticipate changes in regulations, consumer preferences, and economic trends, ensuring they are prepared to make proactive, forward-thinking decisions.

Market Share Analysis: Understanding the Competitive Landscape in the FinFET Technology Market

A detailed market share analysis in the FinFET Technology Market provides a comprehensive assessment of vendors' performance. Companies can identify their competitive positioning by comparing key metrics, including revenue, customer base, and growth rates. This analysis highlights market concentration, fragmentation, and trends in consolidation, offering vendors the insights required to make strategic decisions that enhance their position in an increasingly competitive landscape.

FPNV Positioning Matrix: Evaluating Vendors' Performance in the FinFET Technology Market

The Forefront, Pathfinder, Niche, Vital (FPNV) Positioning Matrix is a critical tool for evaluating vendors within the FinFET Technology Market. This matrix enables business organizations to make well-informed decisions that align with their goals by assessing vendors based on their business strategy and product satisfaction. The four quadrants provide a clear and precise segmentation of vendors, helping users identify the right partners and solutions that best fit their strategic objectives.

Strategy Analysis & Recommendation: Charting a Path to Success in the FinFET Technology Market

A strategic analysis of the FinFET Technology Market is essential for businesses looking to strengthen their global market presence. By reviewing key resources, capabilities, and performance indicators, business organizations can identify growth opportunities and work toward improvement. This approach helps businesses navigate challenges in the competitive landscape and ensures they are well-positioned to capitalize on newer opportunities and drive long-term success.

Key Company Profiles

The report delves into recent significant developments in the FinFET Technology Market, highlighting leading vendors and their innovative profiles. These include Advanced Micro Devices, Inc., Ansys Inc., Arm Limited, Diodes Incorporated, Faraday Technology Corporation, Finwave Semiconductor, Inc., GlobalFoundries Inc., Huawei Technologies Co. Ltd., Infineon Technologies AG, Intel Corporation, International Business Machines Corporation, Keysight Technologies, Inc., MediaTek, Inc., NVIDIA Corporation, NXP Semiconductors N.V., Qualcomm, Inc., Rambus Incorporated, Renesas Electronics Corporation, Rohm Co., Ltd., Samsung Electronics Co., Ltd., Semiconductor Manufacturing International Corporation, Taiwan Semiconductor Manufacturing Company Limited, Texas Instruments Incorporated, Toshiba Corporation, and United Microelectronics Corporation.

Market Segmentation & Coverage

This research report categorizes the FinFET Technology Market to forecast the revenues and analyze trends in each of the following sub-markets:

  • Based on Type, market is studied across Bulk FinFETS, Independent Gate, Shorted Gate, and SOI FinFETS.
  • Based on Technology, market is studied across 10nm, 14nm, 16nm, 20nm, 3nm, 5nm, and 7nm.
  • Based on Application, market is studied across Central Processing Unit (CPU), Field-Programmable Gate Array (FPGA), Graphics Processing Unit (GPU), Network Processor, and System-On-Chip (SoC).
  • Based on End-User, market is studied across Automotive, Consumer Electronics, High-End Networks, and Mobile.
  • Based on Region, market is studied across Americas, Asia-Pacific, and Europe, Middle East & Africa. The Americas is further studied across Argentina, Brazil, Canada, Mexico, and United States. The United States is further studied across California, Florida, Illinois, New York, Ohio, Pennsylvania, and Texas. The Asia-Pacific is further studied across Australia, China, India, Indonesia, Japan, Malaysia, Philippines, Singapore, South Korea, Taiwan, Thailand, and Vietnam. The Europe, Middle East & Africa is further studied across Denmark, Egypt, Finland, France, Germany, Israel, Italy, Netherlands, Nigeria, Norway, Poland, Qatar, Russia, Saudi Arabia, South Africa, Spain, Sweden, Switzerland, Turkey, United Arab Emirates, and United Kingdom.

The report offers a comprehensive analysis of the market, covering key focus areas:

1. Market Penetration: A detailed review of the current market environment, including extensive data from top industry players, evaluating their market reach and overall influence.

2. Market Development: Identifies growth opportunities in emerging markets and assesses expansion potential in established sectors, providing a strategic roadmap for future growth.

3. Market Diversification: Analyzes recent product launches, untapped geographic regions, major industry advancements, and strategic investments reshaping the market.

4. Competitive Assessment & Intelligence: Provides a thorough analysis of the competitive landscape, examining market share, business strategies, product portfolios, certifications, regulatory approvals, patent trends, and technological advancements of key players.

5. Product Development & Innovation: Highlights cutting-edge technologies, R&D activities, and product innovations expected to drive future market growth.

The report also answers critical questions to aid stakeholders in making informed decisions:

1. What is the current market size, and what is the forecasted growth?

2. Which products, segments, and regions offer the best investment opportunities?

3. What are the key technology trends and regulatory influences shaping the market?

4. How do leading vendors rank in terms of market share and competitive positioning?

5. What revenue sources and strategic opportunities drive vendors' market entry or exit strategies?

Table of Contents

1. Preface

  • 1.1. Objectives of the Study
  • 1.2. Market Segmentation & Coverage
  • 1.3. Years Considered for the Study
  • 1.4. Currency & Pricing
  • 1.5. Language
  • 1.6. Stakeholders

2. Research Methodology

  • 2.1. Define: Research Objective
  • 2.2. Determine: Research Design
  • 2.3. Prepare: Research Instrument
  • 2.4. Collect: Data Source
  • 2.5. Analyze: Data Interpretation
  • 2.6. Formulate: Data Verification
  • 2.7. Publish: Research Report
  • 2.8. Repeat: Report Update

3. Executive Summary

4. Market Overview

5. Market Insights

  • 5.1. Market Dynamics
    • 5.1.1. Drivers
      • 5.1.1.1. Increase in production and sales of electronic devices
      • 5.1.1.2. Rising utilization of FinFET in electronic devices to increase the density of integrated circuits(ICs)
      • 5.1.1.3. Application of FinFET technology in the manufacturing of semiconductors
    • 5.1.2. Restraints
      • 5.1.2.1. High fabrication cost and very high capacitance
    • 5.1.3. Opportunities
      • 5.1.3.1. Rising utilization of FinFET technologies in space applications
      • 5.1.3.2. Development of GaN FinFETs and tri-gate devices for power and RF applications
    • 5.1.4. Challenges
      • 5.1.4.1. Significant design and manufacturing complexities
  • 5.2. Market Segmentation Analysis
  • 5.3. Porter's Five Forces Analysis
    • 5.3.1. Threat of New Entrants
    • 5.3.2. Threat of Substitutes
    • 5.3.3. Bargaining Power of Customers
    • 5.3.4. Bargaining Power of Suppliers
    • 5.3.5. Industry Rivalry
  • 5.4. PESTLE Analysis
    • 5.4.1. Political
    • 5.4.2. Economic
    • 5.4.3. Social
    • 5.4.4. Technological
    • 5.4.5. Legal
    • 5.4.6. Environmental

6. FinFET Technology Market, by Type

  • 6.1. Introduction
  • 6.2. Bulk FinFETS
  • 6.3. Independent Gate
  • 6.4. Shorted Gate
  • 6.5. SOI FinFETS

7. FinFET Technology Market, by Technology

  • 7.1. Introduction
  • 7.2. 10nm
  • 7.3. 14nm
  • 7.4. 16nm
  • 7.5. 20nm
  • 7.6. 3nm
  • 7.7. 5nm
  • 7.8. 7nm

8. FinFET Technology Market, by Application

  • 8.1. Introduction
  • 8.2. Central Processing Unit (CPU)
  • 8.3. Field-Programmable Gate Array (FPGA)
  • 8.4. Graphics Processing Unit (GPU)
  • 8.5. Network Processor
  • 8.6. System-On-Chip (SoC)

9. FinFET Technology Market, by End-User

  • 9.1. Introduction
  • 9.2. Automotive
  • 9.3. Consumer Electronics
  • 9.4. High-End Networks
  • 9.5. Mobile

10. Americas FinFET Technology Market

  • 10.1. Introduction
  • 10.2. Argentina
  • 10.3. Brazil
  • 10.4. Canada
  • 10.5. Mexico
  • 10.6. United States

11. Asia-Pacific FinFET Technology Market

  • 11.1. Introduction
  • 11.2. Australia
  • 11.3. China
  • 11.4. India
  • 11.5. Indonesia
  • 11.6. Japan
  • 11.7. Malaysia
  • 11.8. Philippines
  • 11.9. Singapore
  • 11.10. South Korea
  • 11.11. Taiwan
  • 11.12. Thailand
  • 11.13. Vietnam

12. Europe, Middle East & Africa FinFET Technology Market

  • 12.1. Introduction
  • 12.2. Denmark
  • 12.3. Egypt
  • 12.4. Finland
  • 12.5. France
  • 12.6. Germany
  • 12.7. Israel
  • 12.8. Italy
  • 12.9. Netherlands
  • 12.10. Nigeria
  • 12.11. Norway
  • 12.12. Poland
  • 12.13. Qatar
  • 12.14. Russia
  • 12.15. Saudi Arabia
  • 12.16. South Africa
  • 12.17. Spain
  • 12.18. Sweden
  • 12.19. Switzerland
  • 12.20. Turkey
  • 12.21. United Arab Emirates
  • 12.22. United Kingdom

13. Competitive Landscape

  • 13.1. Market Share Analysis, 2023
  • 13.2. FPNV Positioning Matrix, 2023
  • 13.3. Competitive Scenario Analysis
  • 13.4. Strategy Analysis & Recommendation

Companies Mentioned

  • 1. Advanced Micro Devices, Inc.
  • 2. Ansys Inc.
  • 3. Arm Limited
  • 4. Diodes Incorporated
  • 5. Faraday Technology Corporation
  • 6. Finwave Semiconductor, Inc.
  • 7. GlobalFoundries Inc.
  • 8. Huawei Technologies Co. Ltd.
  • 9. Infineon Technologies AG
  • 10. Intel Corporation
  • 11. International Business Machines Corporation
  • 12. Keysight Technologies, Inc.
  • 13. MediaTek, Inc.
  • 14. NVIDIA Corporation
  • 15. NXP Semiconductors N.V.
  • 16. Qualcomm, Inc.
  • 17. Rambus Incorporated
  • 18. Renesas Electronics Corporation
  • 19. Rohm Co., Ltd.
  • 20. Samsung Electronics Co., Ltd.
  • 21. Semiconductor Manufacturing International Corporation
  • 22. Taiwan Semiconductor Manufacturing Company Limited
  • 23. Texas Instruments Incorporated
  • 24. Toshiba Corporation
  • 25. United Microelectronics Corporation
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