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¼¼°èÀÇ NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀå : À¯Çü, ±¸Á¶, ¿ëµµ, ÃÖÁ¾ ¿ëµµº° ¿¹Ãø(2025-2030³â)

NAND Flash Memory Market by Type (MLC (Two Bit Per Cell), QLC (Quad Level Cell), SLC (One Bit Per Cell)), Structure (2-D Structure, 3-D Structure), Application, End Use Vertical - Global Forecast 2025-2030

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¡á º¸°í¼­¿¡ µû¶ó ÃֽŠÁ¤º¸·Î ¾÷µ¥ÀÌÆ®ÇÏ¿© º¸³»µå¸³´Ï´Ù. ¹è¼ÛÀÏÁ¤Àº ¹®ÀÇÇØ Áֽñ⠹ٶø´Ï´Ù.

NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀåÀÇ 2023³â ½ÃÀå ±Ô¸ð´Â 667¾ï 5,000¸¸ ´Þ·¯, 2024³â¿¡´Â 703¾ï 2,000¸¸ ´Þ·¯¿¡ À̸¦ °ÍÀ¸·Î ¿¹»óµÇ¸ç CAGR 5.54%·Î ¼ºÀåÇÏ¿© 2030³â¿¡´Â 973¾ï 8,000¸¸ ´Þ·¯¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.

NAND Ç÷¡½Ã ¸Þ¸ð¸®´Â Àü·Â ¾øÀÌ µ¥ÀÌÅ͸¦ À¯ÁöÇÏ´Â ºñÈֹ߼º ½ºÅ丮Áö ±â¼úÀÇ ÀÏÁ¾À̸ç, µ¥ÀÌÅÍ À¯Áö È¿À²¼º°ú ´Ù¸¥ ½ºÅ丮Áö ¹Ìµð¾îº¸´Ù Àú·ÅÇÑ °¡°ÝÀ¸·Î ÀüÀÚ ºÐ¾ß¿¡¼­ÀÇ ¿ëµµ¿¡ ÇʼöÀûÀÔ´Ï´Ù. NAND Ç÷¯½Ã ¸Þ¸ð¸® ¼ö¿ä´Â ¼ÒºñÀÚ ÀÏ·ºÆ®·Î´Ð½º, ÀÚµ¿Â÷, µ¥ÀÌÅͼ¾ÅÍ µîÀÇ Áøº¸¿¡ µû¶ó ±ÞÁõÇϰí ÀÖÀ¸¸ç, °í¼Ó µ¥ÀÌÅÍ º¸Á¸°ú °Ë»ö¿¡ ´ëÇÑ ¿ä±¸ÀÇ °íÁ¶°¡ ±× ¿øµ¿·ÂÀÌ µÇ°í ÀÖ½À´Ï´Ù. °í¼º´É ÄÄÇ»ÆÃ ½Ã½ºÅÛ¿¡¼­ ¸Å¿ì Áß¿äÇϸç, ±× ¿ëµµ´Â ±¤´ëÇÏ°í ´Ù¾çÇÕ´Ï´Ù. AI¿Í ¸Ó½Å·¯´×ÀÇ Áøº¸, µð¹ÙÀ̽ºÀÇ Á¢¼Ó¼º°ú ½ºÅ丮ÁöÀÇ ¿ä±¸¸¦ ³ôÀÌ´Â 5G ÀÎÇÁ¶óÀÇ ´ëÆøÀûÀÎ È®´ë µîÀÇ ¿äÀο¡ ¿µÇâÀ» ¹Þ°í ÀÖ½À´Ï´Ù. 3D NAND ±â¼úÀÇ µîÀå°ú ¿§Áö ÄÄÇ»ÆÃÀÇ °³¹ßÀº Å« °¡´É¼ºÀ» Áö´Ñ ºÐ¾ßÀÔ´Ï´Ù. ¶ÇÇÑ, ¹Ì¼¼È­ÀÇ ÀáÀçÀûÀÎ ±â¼úÀû ÇѰè¿Í NAND ½ºÅ丮ÁöÀÇ µ¥ÀÌÅÍ º¸¾È¿¡ ´ëÇÑ ¿ì·Á°¡ ÁøÀüÀ» ¹æÇØÇÒ ¼ö ÀÖ½À´Ï´Ù. ¼ö¸í°ú ½Å·Ú¼º Çâ»ó, ¿¡³ÊÁö È¿À² °³¼±¿¡ ÁÖ·ÂÇÔÀ¸·Î½á »õ·Î¿î ½ÃÀåÀÇ ±æÀÌ ¿­¸± °¡´É¼ºÀÌ ÀÖ½À´Ï´Ù. ½ÃÀåÀº ¿ªµ¿ÀûÀ̸ç Áö¼ÓÀûÀÎ ±â¼ú ¹ßÀü°ú ¼ÒºñÀÚ ¿ä±¸ÀÇ º¯È­·Î ÀÎÇØ ÀÌÇØ °ü°èÀÚ´Â »ç¿ë °¡´ÉÇÑ ±âȸ¸¦ È¿°úÀûÀ¸·Î Ȱ¿ëÇϱâ À§ÇØ ÀÌ·¯ÇÑ µ¿ÇâÀ» Àü·«ÀûÀ¸·Î Á¶Á¤ÇØ¾ß ÇÕ´Ï´Ù.

ÁÖ¿ä ½ÃÀå Åë°è
±âÁسâ(2023) 667¾ï 5,000¸¸ ´Þ·¯
ÃßÁ¤³â(2024) 703¾ï 2,000¸¸ ´Þ·¯
¿¹Ãø³â(2030) 973¾ï 8,000¸¸ ´Þ·¯
CAGR(%) 5.54%

½ÃÀå ¿ªÇÐ: ½Å¼ÓÇÏ°Ô ÁøÈ­ÇÏ´Â NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀåÀÇ ÁÖ¿ä ½ÃÀå ÀλçÀÌÆ® °ø°³

NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀåÀº ¼ö¿ä ¹× °ø±ÞÀÇ ¿ªµ¿ÀûÀÎ »óÈ£ÀÛ¿ë¿¡ ÀÇÇØ º¯¸ð¸¦ ÀÌ·ç°í ÀÖ½À´Ï´Ù. »õ·Î¿î ºñÁî´Ï½º ±âȸ¸¦ ¾ò´Â µ¥ µµ¿òÀÌ µË´Ï´Ù. ÀÌ·¯ÇÑ µ¿ÇâÀ» Á¾ÇÕÀûÀ¸·Î ÆÄ¾ÇÇÔÀ¸·Î½á ±â¾÷Àº Á¤Ä¡Àû, Áö¸®Àû, ±â¼úÀû, »çȸÀû, °æÁ¦Àû ¿µ¿ª¿¡ °ÉÄ£ ´Ù¾çÇÑ À§ÇèÀ» ¿ÏÈ­ÇÒ ¼ö ÀÖÀ¸¸ç, ¼ÒºñÀÚ Çൿ°ú ±×°ÍÀÌ Á¦Á¶ ºñ¿ë°ú ±¸¸Å µ¿Çâ¿¡ ¹ÌÄ¡´Â ¿µÇâÀ» ´õ ¸íÈ®ÇÏ°Ô ÀÌÇØÇÒ ¼ö ÀÖ½À´Ï´Ù.

  • ½ÃÀå ¼ºÀå ÃËÁø¿äÀÎ
    • ½º¸¶Æ®Æù, ÅÂºí¸´, ³ëÆ®ºÏÀÇ º¸±Þ È®´ë
    • AI¿Í MLÀÇ Ã¤¿ë È®´ë°¡ °í¼Ó¡¤´ë¿ë·® ½ºÅ丮Áö ¼ö¿ä¸¦ ÃËÁø
    • ÇÏµå µð½ºÅ© µå¶óÀ̺ê(HDD)¿¡¼­ º¸´Ù È¿À²ÀûÀÌ°í ºü¸¥ SSD·ÎÀÇ ¿£ÅÍÇÁ¶óÀÌÁî ºÐ¾ßÀÇ ´ëÆøÀûÀÎ ÀÌÇà
  • ½ÃÀå ¼ºÀå ¾ïÁ¦¿äÀÎ
    • Á¦Ç° ¸®ÄÝ ¹× ±â¼úÀû °áÇÔ¿¡ ´ëÇÑ Ãë¾à¼º
  • ½ÃÀå ±âȸ
    • È¿À²ÀûÀ̰í Ä¿½ºÅ͸¶ÀÌÁîµÈ Á¦Ç° °³¹ßÀ» À§ÇÑ NAND Ç÷¡½Ã ¸Þ¸ð¸® Á¦Á¶¾÷ü¿Í °¡Àü Á¦Á¶¾÷ü¿ÍÀÇ Àü·«Àû Á¦ÈÞ
    • ¹ÝµµÃ¼ ÇöÁö »ý»êÀ» µÞ¹ÞħÇÏ´Â ÁÖ¿ä±¹ÀÇ ÃÖ±Ù Á¤ºÎ ÀÌ´Ï¼ÅÆ¼ºê
  • ½ÃÀåÀÇ °úÁ¦
    • ¸ð¹æÇ°ÀÇ ¸®½ºÅ©¿Í Àü°³ÀÇ °úÁ¦

Porter's Five Force : NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀåÀ» Ž»öÇÏ´Â Àü·« µµ±¸

Porter's Five Force Framework´Â ½ÃÀå »óȲ°æÀï ±¸µµ¸¦ ÆÄ¾ÇÇÏ´Â Áß¿äÇÑ µµ±¸ÀÔ´Ï´Ù. ÇÁ·¹ÀÓ¿öÅ©´Â ±â¾÷ÀÌ ½ÃÀå ³» ¼¼·Âµµ¸¦ Æò°¡ÇÏ°í ½Å±Ô »ç¾÷ÀÇ ¼öÀͼºÀ» ÆÇ´ÜÇÏ´Â µ¥ µµ¿òÀÌ µË´Ï´Ù. ´õ °­ÀÎÇÑ ½ÃÀå¿¡¼­ Æ÷Áö¼Å´×À» º¸Àå ÇÒ ¼ö ÀÖ½À´Ï´Ù.

PESTLE ºÐ¼® : NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀå¿¡¼­ ¿ÜºÎ·ÎºÎÅÍÀÇ ¿µÇâ ÆÄ¾Ç

¿ÜºÎ °Å½ÃÀû ȯ°æ ¿äÀÎÀº NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀåÀÇ ¼º°ú ¿ªÇÐÀ» Çü¼ºÇÏ´Â µ¥ ¸Å¿ì Áß¿äÇÑ ¿ªÇÒÀ»ÇÕ´Ï´Ù. PESTLE ¿äÀÎÀ» Á¶»çÇÔÀ¸·Î½á ±â¾÷Àº ÀáÀçÀû À§Çè°ú ±âȸ¸¦ ´õ Àß ÀÌÇØÇÒ ¼ö ÀÖ½À´Ï´Ù. ¾ÕÀ¸·Î ¿¹»óÇÑ Àû±ØÀûÀÎ ÀÇ»ç °áÁ¤À» ÇÒ Áغñ°¡ µÇ¾î ÀÖ½À´Ï´Ù.

½ÃÀå Á¡À¯À² ºÐ¼® : NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀå °æÀï ±¸µµ ÆÄ¾Ç

NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀåÀÇ »ó¼¼ÇÑ ½ÃÀå Á¡À¯À² ºÐ¼®À» ÅëÇØ °ø±Þ¾÷üÀÇ ¼º°ú¸¦ Á¾ÇÕÀûÀ¸·Î Æò°¡ÇÒ ¼ö ÀÖ½À´Ï´Ù. ÀÌ ºÐ¼®Àº ½ÃÀå ÁýÁß, ´ÜÆíÈ­ ¹× ÅëÇÕ µ¿ÇâÀ» ¹àÇô³»°í °ø±Þ¾÷ü´Â °æÀïÀÌ Ä¡¿­ ÇØÁü¿¡ µû¶ó ÀÚ»çÀÇ ÁöÀ§¸¦ ³ôÀÌ´Â Àü·«Àû ÀÇ»ç °áÁ¤À» ³»¸®´Â µ¥ ÇÊ¿äÇÕ´Ï´Ù.

FPNV Æ÷Áö¼Å´× ¸ÅÆ®¸¯½º : NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀå¿¡¼­ °ø±Þ¾÷üÀÇ ¼º´É Æò°¡

FPNV Æ÷Áö¼Å´× ¸ÅÆ®¸¯½º´Â NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀå¿¡¼­ º¥´õ¸¦ Æò°¡ÇÏ´Â Áß¿äÇÑ µµ±¸ÀÔ´Ï´Ù. ³× °¡Áö »çºÐ¸éÀ» ÅëÇØ º¥´õ¸¦ ¸íÈ®Çϰí Á¤È®ÇÏ°Ô ºÐÇÒÇϰí Àü·« ¸ñÇ¥¿¡ °¡Àå ÀûÇÕÇÑ ÆÄÆ®³Ê ¹× ¼Ö·ç¼ÇÀ» ÆÄ¾ÇÇÒ ¼ö ÀÖ½À´Ï´Ù.

Àü·« ºÐ¼® ¹× ±ÇÀå: NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀå¿¡¼­ ¼º°øÀ» À§ÇÑ ±æÀ» ±×¸®±â

NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀåÀÇ Àü·« ºÐ¼®Àº ¼¼°è ½ÃÀå¿¡¼­ÀÇ ÇÁ·¹Á𽺠°­È­¸¦ ¸ñÇ¥·Î ÇÏ´Â ±â¾÷¿¡ ÇʼöÀûÀÎ ¿ä¼ÒÀÔ´Ï´Ù. ÀÌ Á¢±Ù¹ýÀ» ÅëÇØ °æÀï ±¸µµ¿¡¼­ °úÁ¦¸¦ ±Øº¹ÇÏ°í »õ·Î¿î ºñÁî´Ï½º ±âȸ¸¦ Ȱ¿ëÇÏ¿© Àå±âÀûÀÎ ¼º°øÀ» °ÅµÑ ¼ö Àִ üÁ¦¸¦ ±¸ÃàÇÒ ¼ö ÀÖ½À´Ï´Ù.

ÀÌ º¸°í¼­´Â ÁÖ¿ä °ü½É ºÐ¾ß¸¦ Æ÷°ýÇÏ´Â ½ÃÀåÀÇ Á¾ÇÕÀûÀÎ ºÐ¼®À» Á¦°øÇÕ´Ï´Ù.

1. ½ÃÀå ħÅõ: ÇöÀç ½ÃÀå ȯ°æÀÇ »ó¼¼ÇÑ °ËÅä, ÁÖ¿ä ±â¾÷ÀÇ ±¤¹üÀ§ÇÑ µ¥ÀÌÅÍ, ½ÃÀå µµ´Þ¹üÀ§ ¹× Àü¹ÝÀûÀÎ ¿µÇâ·Â Æò°¡.

2. ½ÃÀå °³Ã´µµ: ½ÅÈï ½ÃÀåÀÇ ¼ºÀå ±âȸ¸¦ ÆÄ¾ÇÇÏ°í ±âÁ¸ ºÐ¾ßÀÇ È®Àå °¡´É¼ºÀ» Æò°¡ÇÏ¸ç ¹Ì·¡ ¼ºÀåÀ» À§ÇÑ Àü·«Àû ·Îµå¸ÊÀ» Á¦°øÇÕ´Ï´Ù.

3. ½ÃÀå ´Ù¾çÈ­: ÃÖ±Ù Á¦Ç° Ãâ½Ã, ¹Ì°³Ã´ Áö¿ª, ¾÷°èÀÇ ÁÖ¿ä Áøº¸, ½ÃÀåÀ» Çü¼ºÇÏ´Â Àü·«Àû ÅõÀÚ¸¦ ºÐ¼®ÇÕ´Ï´Ù.

4. °æÀï Æò°¡ ¹× Á¤º¸ : °æÀï ±¸µµ¸¦ öÀúÈ÷ ºÐ¼®ÇÏ¿© ½ÃÀå Á¡À¯À², »ç¾÷ Àü·«, Á¦Ç° Æ÷Æ®Æú¸®¿À, ÀÎÁõ, ±ÔÁ¦ ´ç±¹ ½ÂÀÎ, ƯÇã µ¿Çâ, ÁÖ¿ä ±â¾÷ÀÇ ±â¼ú Áøº¸ µîÀ» °ËÁõÇÕ´Ï´Ù.

5. Á¦Ç° °³¹ß ¹× Çõ½Å : ¹Ì·¡ ½ÃÀå ¼ºÀåÀ» °¡¼ÓÇÒ °ÍÀ¸·Î ¿¹»óµÇ´Â ÃÖ÷´Ü ±â¼ú, R&D Ȱµ¿, Á¦Ç° Çõ½ÅÀ» °­Á¶ÇÕ´Ï´Ù.

¶ÇÇÑ ÀÌÇØ°ü°èÀÚ°¡ ÃæºÐÇÑ Á¤º¸¸¦ ¾ò°í ÀÇ»ç°áÁ¤À» ÇÒ ¼ö ÀÖµµ·Ï Áß¿äÇÑ Áú¹®¿¡ ´ë´äÇϰí ÀÖ½À´Ï´Ù.

1. ÇöÀç ½ÃÀå ±Ô¸ð¿Í ÇâÈÄ ¼ºÀå ¿¹ÃøÀº?

2. ÃÖ°íÀÇ ÅõÀÚ ±âȸ¸¦ Á¦°øÇÏ´Â Á¦Ç°, ºÎ¹® ¹× Áö¿ªÀº ¾îµðÀԴϱî?

3. ½ÃÀåÀ» Çü¼ºÇÏ´Â ÁÖ¿ä ±â¼ú µ¿Çâ°ú ±ÔÁ¦ÀÇ ¿µÇâÀº?

4. ÁÖ¿ä º¥´õÀÇ ½ÃÀå Á¡À¯À²°ú °æÀï Æ÷Áö¼ÇÀº?

5. º¥´õ ½ÃÀå ÁøÀÔ¡¤Ã¶¼ö Àü·«ÀÇ ¿øµ¿·ÂÀÌ µÇ´Â ¼öÀÍ¿ø°ú Àü·«Àû ±âȸ´Â ¹«¾ùÀΰ¡?

¸ñÂ÷

Á¦1Àå ¼­¹®

Á¦2Àå Á¶»ç ¹æ¹ý

Á¦3Àå ÁÖ¿ä ¿ä¾à

Á¦4Àå ½ÃÀå °³¿ä

Á¦5Àå ½ÃÀå ÀλçÀÌÆ®

  • ½ÃÀå ¿ªÇÐ
    • ¼ºÀå ÃËÁø¿äÀÎ
      • ½º¸¶Æ®Æù, ÅÂºí¸´, ³ëÆ®ºÏÀÇ º¸±ÞÀÌ Áõ°¡
      • AI¿Í MLÀÇ µµÀÔ È®´ë¿¡ ÀÇÇØ °í¼ÓÀÌ°í ´ë¿ë·®ÀÇ ½ºÅ丮Áö ¼ö¿ä°¡ ³ô¾ÆÁö°í ÀÖ½À´Ï´Ù.
      • ±â¾÷ ºÎ¹®¿¡¼­´Â ÇÏµå µð½ºÅ© µå¶óÀ̺ê(HDD)¿¡¼­ º¸´Ù È¿À²ÀûÀÌ°í ºü¸¥ SSD·ÎÀÇ Å« ÀÌÇàÀÌ ÁøÇàµÇ°í ÀÖ½À´Ï´Ù.
    • ¾ïÁ¦¿äÀÎ
      • Á¦Ç° ¸®ÄÝ ¹× ±â¼úÀû Àå¾Ö¿¡ ´ëÇÑ Ãë¾à¼º
    • ±âȸ
      • È¿À²ÀûÀÌ°í ¸ÂÃãÈ­µÈ Á¦Ç° °³¹ßÀ» À§ÇÑ NAND Ç÷¡½Ã ¸Þ¸ð¸® Á¦Á¶¾÷ü¿Í °¡Àü Á¦Á¶¾÷ü °£ÀÇ Àü·«Àû Á¦ÈÞ
      • ÁÖ¿ä °æÁ¦±¹¿¡ À־ÀÇ ÃÖ±ÙÀÇ Á¤ºÎÀÇ ´ëó¿¡ ÀÇÇØ ±¹³»ÀÇ ¹ÝµµÃ¼ »ý»êÀÌ ÃËÁøµÇ°í ÀÖ´Ù
    • °úÁ¦
      • À§Á¶Ç°ÀÇ ¸®½ºÅ©¿Í µµÀÔÀÇ °úÁ¦
  • ½ÃÀå ¼¼ºÐÈ­ ºÐ¼®
    • À¯Çü : ºñ¿ë, ¼º´É, ¿ë·®ÀÇ ÃÖÀûÀÇ ¹ë·±½º¿¡ ÀÇÇØ TLC(Æ®¸®Çà ·¹º§ ¼¿) NAND Ç÷¡½Ã ¸Þ¸ð¸®°¡ ¼±È£µÇ´Â °æÇâ
    • ÀÀ¿ë: ´Ù¾çÇÑ »ê¾÷ ¹× ÀÌ¿ë »ç·Ê¿¡ °ÉÄ£ SSD(SSD)ÀÇ ±Þ¼ÓÇÑ º¸±Þ
  • Porter's Five Forces ºÐ¼®
  • PESTEL ºÐ¼®
    • Á¤Ä¡Àû
    • °æÁ¦
    • »ç±³
    • ±â¼úÀû
    • ¹ý·ü»ó
    • ȯ°æ

Á¦6Àå NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀå : À¯Çüº°

  • MLC(¼¿´ç 2ºñÆ®)
  • QLC(Äõµå ·¹º§ ¼¿)
  • SLC(¼¿´ç 1ºñÆ®)
  • TLC(¼¿´ç 3ºñÆ®)

Á¦7Àå NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀå : ±¸Á¶º°

  • 2Â÷¿ø ±¸Á¶
  • 3Â÷¿ø ±¸Á¶

Á¦8Àå NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀå : ¿ëµµº°

  • µ¥ÀÌÅͼ¾ÅÍ
  • ¸Þ¸ð¸® Ä«µå
  • ³×ºñ°ÔÀ̼ǰú ÀÎÆ÷Å×ÀÎ¸ÕÆ®
  • ½º¸¶Æ®Æù
  • SSD
  • ÅÂºí¸´

Á¦9Àå NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀå : ÃÖÁ¾ ¿ëµµº°

  • ÀÚµ¿Â÷
  • °¡Àü
  • ¿£ÅÍÇÁ¶óÀÌÁî ¼Ö·ç¼Ç
  • »ê¾÷

Á¦10Àå ¾Æ¸Þ¸®Ä«ÀÇ NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀå

  • ¾Æ¸£ÇîÆ¼³ª
  • ºê¶óÁú
  • ij³ª´Ù
  • ¸ß½ÃÄÚ
  • ¹Ì±¹

Á¦11Àå ¾Æ½Ã¾ÆÅÂÆò¾çÀÇ NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀå

  • È£ÁÖ
  • Áß±¹
  • Àεµ
  • Àεµ³×½Ã¾Æ
  • ÀϺ»
  • ¸»·¹À̽þÆ
  • Çʸ®ÇÉ
  • ½Ì°¡Æ÷¸£
  • Çѱ¹
  • ´ë¸¸
  • ű¹
  • º£Æ®³²

Á¦12Àå À¯·´¡¤Áßµ¿ ¹× ¾ÆÇÁ¸®Ä«ÀÇ NAND Ç÷¡½Ã ¸Þ¸ð¸® ½ÃÀå

  • µ§¸¶Å©
  • ÀÌÁýÆ®
  • Çɶõµå
  • ÇÁ¶û½º
  • µ¶ÀÏ
  • À̽º¶ó¿¤
  • ÀÌÅ»¸®¾Æ
  • ³×´ú¶õµå
  • ³ªÀÌÁö¸®¾Æ
  • ³ë¸£¿þÀÌ
  • Æú¶õµå
  • īŸ¸£
  • ·¯½Ã¾Æ
  • »ç¿ìµð¾Æ¶óºñ¾Æ
  • ³²¾ÆÇÁ¸®Ä«
  • ½ºÆäÀÎ
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  • ½ºÀ§½º
  • ÅÍŰ
  • ¾Æ¶ø¿¡¹Ì¸®Æ®(UAE)
  • ¿µ±¹

Á¦13Àå °æÀï ±¸µµ

  • ½ÃÀå Á¡À¯À² ºÐ¼® 2023
  • FPNV Æ÷Áö¼Å´× ¸ÅÆ®¸¯½º, 2023
  • °æÀï ½Ã³ª¸®¿À ºÐ¼®
    • NAND Ç÷¡½Ã ¸Þ¸ð¸®ÀÇ Çõ¸íÀûÀÎ Áøº¸, SamsungÀÇ 9¼¼´ë V-NAND
    • Micron, Crucial SSD¿¡ 232Ãþ QLC¸¦ žÀçÇØ NAND Å×Å©³î·ÎÁö¸¦ ÁøÈ­
    • Kioxia¿Í Western Digital, ¼º´É°ú È¿À²¼ºÀ» Çâ»ó½ÃŲ ȹ±âÀûÀÎ 3D Ç÷¡½Ã ¸Þ¸ð¸®¸¦ ¹ßÇ¥
  • Àü·« ºÐ¼®°ú Á¦¾È

±â¾÷ ¸ñ·Ï

  • Adata Technology Co., Ltd.
  • ATP Group
  • Avnet, Inc.
  • Everspin Technologies Inc.
  • FLexxon Pte Ltd.
  • Fujitsu Limited
  • Intel Corporation
  • International Business Machines Corporation
  • Kingston Technology Europe Co. LLP
  • Kioxia Corporation
  • Lenovo Group Limited
  • Micron Technology Inc.
  • Nanya Technology
  • Patriot Memory
  • Renesas Electronics Corporation
  • Samsung Electronics Co. Ltd.
  • Silicon Power
  • SK hynix Co., Ltd.
  • Sony Corporation
  • Toshiba Corporation
  • Transcend Information
  • Western Digital Technologies Inc.
  • Winbond
  • Yangtze Memory Technologies Corp.
JHS 24.12.30

The NAND Flash Memory Market was valued at USD 66.75 billion in 2023, expected to reach USD 70.32 billion in 2024, and is projected to grow at a CAGR of 5.54%, to USD 97.38 billion by 2030.

NAND Flash Memory is a type of non-volatile storage technology that retains data without power, crucial for applications in electronics due to its efficiency in data retention and affordability over other storage media. The demand for NAND Flash Memory has surged with advancements in consumer electronics, automotive, and data centers, driven by growing needs for high-speed data storage and retrieval. NAND Flash is pivotal in smartphones, SSDs, tablets, and high-performance computing systems, making its applications vast and diverse. The market's growth is influenced by factors like the proliferation of IoT devices, which require efficient, compact storage solutions, advances in AI and machine learning, which drive demand for faster data processing technologies, and the significant expansion of 5G infrastructure, enhancing devices' connectivity and storage needs. Among the latest opportunities, the advent of 3D NAND technology, which increases storage capacity without raising costs significantly, and developments in edge computing, are areas that present substantial potential. However, the market faces challenges such as the volatility of raw material prices, which can increase production costs, and the intense competition leading to thinner profit margins. Moreover, potential technical limitations in further miniaturization and concerns over data security in NAND storage could impede progress. For innovation, focusing on enhancing the longevity and reliability of NAND Flash and improving energy efficiency could unlock new market avenues. Additionally, investment in research around integrating NAND technology with quantum computing and expanding its use in emerging tech sectors will be crucial. The market is dynamic, with continuous technological advancements and shifting consumer needs, requiring stakeholders to strategically align with these trends to capitalize effectively on available opportunities.

KEY MARKET STATISTICS
Base Year [2023] USD 66.75 billion
Estimated Year [2024] USD 70.32 billion
Forecast Year [2030] USD 97.38 billion
CAGR (%) 5.54%

Market Dynamics: Unveiling Key Market Insights in the Rapidly Evolving NAND Flash Memory Market

The NAND Flash Memory Market is undergoing transformative changes driven by a dynamic interplay of supply and demand factors. Understanding these evolving market dynamics prepares business organizations to make informed investment decisions, refine strategic decisions, and seize new opportunities. By gaining a comprehensive view of these trends, business organizations can mitigate various risks across political, geographic, technical, social, and economic domains while also gaining a clearer understanding of consumer behavior and its impact on manufacturing costs and purchasing trends.

  • Market Drivers
    • Increasing adoption of smartphones, tablets, and laptops
    • Growing adoption of AI & ML propels the demand for high-speed and high-capacity storage
    • Significant shift of enterprise sector from hard disk drives (HDDs) to more efficient and faster solid-state drives (SSDs)
  • Market Restraints
    • Vulnerability to product recalls and technical failures
  • Market Opportunities
    • Strategic alliances between NAND flash memory manufacturers and consumer electronics companies to the develop efficient and customized products
    • Recent government initiatives in major economies boosting local semiconductor production
  • Market Challenges
    • Risks of counterfeit products and deployment challenges

Porter's Five Forces: A Strategic Tool for Navigating the NAND Flash Memory Market

Porter's five forces framework is a critical tool for understanding the competitive landscape of the NAND Flash Memory Market. It offers business organizations with a clear methodology for evaluating their competitive positioning and exploring strategic opportunities. This framework helps businesses assess the power dynamics within the market and determine the profitability of new ventures. With these insights, business organizations can leverage their strengths, address weaknesses, and avoid potential challenges, ensuring a more resilient market positioning.

PESTLE Analysis: Navigating External Influences in the NAND Flash Memory Market

External macro-environmental factors play a pivotal role in shaping the performance dynamics of the NAND Flash Memory Market. Political, Economic, Social, Technological, Legal, and Environmental factors analysis provides the necessary information to navigate these influences. By examining PESTLE factors, businesses can better understand potential risks and opportunities. This analysis enables business organizations to anticipate changes in regulations, consumer preferences, and economic trends, ensuring they are prepared to make proactive, forward-thinking decisions.

Market Share Analysis: Understanding the Competitive Landscape in the NAND Flash Memory Market

A detailed market share analysis in the NAND Flash Memory Market provides a comprehensive assessment of vendors' performance. Companies can identify their competitive positioning by comparing key metrics, including revenue, customer base, and growth rates. This analysis highlights market concentration, fragmentation, and trends in consolidation, offering vendors the insights required to make strategic decisions that enhance their position in an increasingly competitive landscape.

FPNV Positioning Matrix: Evaluating Vendors' Performance in the NAND Flash Memory Market

The Forefront, Pathfinder, Niche, Vital (FPNV) Positioning Matrix is a critical tool for evaluating vendors within the NAND Flash Memory Market. This matrix enables business organizations to make well-informed decisions that align with their goals by assessing vendors based on their business strategy and product satisfaction. The four quadrants provide a clear and precise segmentation of vendors, helping users identify the right partners and solutions that best fit their strategic objectives.

Strategy Analysis & Recommendation: Charting a Path to Success in the NAND Flash Memory Market

A strategic analysis of the NAND Flash Memory Market is essential for businesses looking to strengthen their global market presence. By reviewing key resources, capabilities, and performance indicators, business organizations can identify growth opportunities and work toward improvement. This approach helps businesses navigate challenges in the competitive landscape and ensures they are well-positioned to capitalize on newer opportunities and drive long-term success.

Key Company Profiles

The report delves into recent significant developments in the NAND Flash Memory Market, highlighting leading vendors and their innovative profiles. These include Adata Technology Co., Ltd., ATP Group, Avnet, Inc., Everspin Technologies Inc., FLexxon Pte Ltd., Fujitsu Limited, Intel Corporation, International Business Machines Corporation, Kingston Technology Europe Co. LLP, Kioxia Corporation, Lenovo Group Limited, Micron Technology Inc., Nanya Technology, Patriot Memory, Renesas Electronics Corporation, Samsung Electronics Co. Ltd., Silicon Power, SK hynix Co., Ltd., Sony Corporation, Toshiba Corporation, Transcend Information, Western Digital Technologies Inc., Winbond, and Yangtze Memory Technologies Corp..

Market Segmentation & Coverage

This research report categorizes the NAND Flash Memory Market to forecast the revenues and analyze trends in each of the following sub-markets:

  • Based on Type, market is studied across MLC (Two Bit Per Cell), QLC (Quad Level Cell), SLC (One Bit Per Cell), and TLC (Three Bit Per Cell).
  • Based on Structure, market is studied across 2-D Structure and 3-D Structure.
  • Based on Application, market is studied across Data Center, Memory Card, Navigation & Infotainment, Smartphone, SSD, and Tablets.
  • Based on End Use Vertical, market is studied across Automotive, Consumer Electronics, Enterprise Solutions, and Industrial.
  • Based on Region, market is studied across Americas, Asia-Pacific, and Europe, Middle East & Africa. The Americas is further studied across Argentina, Brazil, Canada, Mexico, and United States. The United States is further studied across California, Florida, Illinois, New York, Ohio, Pennsylvania, and Texas. The Asia-Pacific is further studied across Australia, China, India, Indonesia, Japan, Malaysia, Philippines, Singapore, South Korea, Taiwan, Thailand, and Vietnam. The Europe, Middle East & Africa is further studied across Denmark, Egypt, Finland, France, Germany, Israel, Italy, Netherlands, Nigeria, Norway, Poland, Qatar, Russia, Saudi Arabia, South Africa, Spain, Sweden, Switzerland, Turkey, United Arab Emirates, and United Kingdom.

The report offers a comprehensive analysis of the market, covering key focus areas:

1. Market Penetration: A detailed review of the current market environment, including extensive data from top industry players, evaluating their market reach and overall influence.

2. Market Development: Identifies growth opportunities in emerging markets and assesses expansion potential in established sectors, providing a strategic roadmap for future growth.

3. Market Diversification: Analyzes recent product launches, untapped geographic regions, major industry advancements, and strategic investments reshaping the market.

4. Competitive Assessment & Intelligence: Provides a thorough analysis of the competitive landscape, examining market share, business strategies, product portfolios, certifications, regulatory approvals, patent trends, and technological advancements of key players.

5. Product Development & Innovation: Highlights cutting-edge technologies, R&D activities, and product innovations expected to drive future market growth.

The report also answers critical questions to aid stakeholders in making informed decisions:

1. What is the current market size, and what is the forecasted growth?

2. Which products, segments, and regions offer the best investment opportunities?

3. What are the key technology trends and regulatory influences shaping the market?

4. How do leading vendors rank in terms of market share and competitive positioning?

5. What revenue sources and strategic opportunities drive vendors' market entry or exit strategies?

Table of Contents

1. Preface

  • 1.1. Objectives of the Study
  • 1.2. Market Segmentation & Coverage
  • 1.3. Years Considered for the Study
  • 1.4. Currency & Pricing
  • 1.5. Language
  • 1.6. Stakeholders

2. Research Methodology

  • 2.1. Define: Research Objective
  • 2.2. Determine: Research Design
  • 2.3. Prepare: Research Instrument
  • 2.4. Collect: Data Source
  • 2.5. Analyze: Data Interpretation
  • 2.6. Formulate: Data Verification
  • 2.7. Publish: Research Report
  • 2.8. Repeat: Report Update

3. Executive Summary

4. Market Overview

5. Market Insights

  • 5.1. Market Dynamics
    • 5.1.1. Drivers
      • 5.1.1.1. Increasing adoption of smartphones, tablets, and laptops
      • 5.1.1.2. Growing adoption of AI & ML propels the demand for high-speed and high-capacity storage
      • 5.1.1.3. Significant shift of enterprise sector from hard disk drives (HDDs) to more efficient and faster solid-state drives (SSDs)
    • 5.1.2. Restraints
      • 5.1.2.1. Vulnerability to product recalls and technical failures
    • 5.1.3. Opportunities
      • 5.1.3.1. Strategic alliances between NAND flash memory manufacturers and consumer electronics companies to the develop efficient and customized products
      • 5.1.3.2. Recent government initiatives in major economies boosting local semiconductor production
    • 5.1.4. Challenges
      • 5.1.4.1. Risks of counterfeit products and deployment challenges
  • 5.2. Market Segmentation Analysis
    • 5.2.1. Type: Emerging preference for TLC (triple-level cell) NAND flash memory owing to its optimal balance between cost, performance, and capacity
    • 5.2.2. Application: Rapid proliferation of solid state drives(SSDs) across diverse industries and use cases
  • 5.3. Porter's Five Forces Analysis
    • 5.3.1. Threat of New Entrants
    • 5.3.2. Threat of Substitutes
    • 5.3.3. Bargaining Power of Customers
    • 5.3.4. Bargaining Power of Suppliers
    • 5.3.5. Industry Rivalry
  • 5.4. PESTLE Analysis
    • 5.4.1. Political
    • 5.4.2. Economic
    • 5.4.3. Social
    • 5.4.4. Technological
    • 5.4.5. Legal
    • 5.4.6. Environmental

6. NAND Flash Memory Market, by Type

  • 6.1. Introduction
  • 6.2. MLC (Two Bit Per Cell)
  • 6.3. QLC (Quad Level Cell)
  • 6.4. SLC (One Bit Per Cell)
  • 6.5. TLC (Three Bit Per Cell)

7. NAND Flash Memory Market, by Structure

  • 7.1. Introduction
  • 7.2. 2-D Structure
  • 7.3. 3-D Structure

8. NAND Flash Memory Market, by Application

  • 8.1. Introduction
  • 8.2. Data Center
  • 8.3. Memory Card
  • 8.4. Navigation & Infotainment
  • 8.5. Smartphone
  • 8.6. SSD
  • 8.7. Tablets

9. NAND Flash Memory Market, by End Use Vertical

  • 9.1. Introduction
  • 9.2. Automotive
  • 9.3. Consumer Electronics
  • 9.4. Enterprise Solutions
  • 9.5. Industrial

10. Americas NAND Flash Memory Market

  • 10.1. Introduction
  • 10.2. Argentina
  • 10.3. Brazil
  • 10.4. Canada
  • 10.5. Mexico
  • 10.6. United States

11. Asia-Pacific NAND Flash Memory Market

  • 11.1. Introduction
  • 11.2. Australia
  • 11.3. China
  • 11.4. India
  • 11.5. Indonesia
  • 11.6. Japan
  • 11.7. Malaysia
  • 11.8. Philippines
  • 11.9. Singapore
  • 11.10. South Korea
  • 11.11. Taiwan
  • 11.12. Thailand
  • 11.13. Vietnam

12. Europe, Middle East & Africa NAND Flash Memory Market

  • 12.1. Introduction
  • 12.2. Denmark
  • 12.3. Egypt
  • 12.4. Finland
  • 12.5. France
  • 12.6. Germany
  • 12.7. Israel
  • 12.8. Italy
  • 12.9. Netherlands
  • 12.10. Nigeria
  • 12.11. Norway
  • 12.12. Poland
  • 12.13. Qatar
  • 12.14. Russia
  • 12.15. Saudi Arabia
  • 12.16. South Africa
  • 12.17. Spain
  • 12.18. Sweden
  • 12.19. Switzerland
  • 12.20. Turkey
  • 12.21. United Arab Emirates
  • 12.22. United Kingdom

13. Competitive Landscape

  • 13.1. Market Share Analysis, 2023
  • 13.2. FPNV Positioning Matrix, 2023
  • 13.3. Competitive Scenario Analysis
    • 13.3.1. Revolutionary Advancements in NAND Flash Memory, Samsung's 9th Generation V-NAND
    • 13.3.2. Micron Advances NAND Technology with the Launch of 232-layer QLC in Crucial SSDs
    • 13.3.3. Kioxia and Western Digital Unveil Breakthrough 3D Flash Memory Offering Enhanced Performance and Efficiency
  • 13.4. Strategy Analysis & Recommendation

Companies Mentioned

  • 1. Adata Technology Co., Ltd.
  • 2. ATP Group
  • 3. Avnet, Inc.
  • 4. Everspin Technologies Inc.
  • 5. FLexxon Pte Ltd.
  • 6. Fujitsu Limited
  • 7. Intel Corporation
  • 8. International Business Machines Corporation
  • 9. Kingston Technology Europe Co. LLP
  • 10. Kioxia Corporation
  • 11. Lenovo Group Limited
  • 12. Micron Technology Inc.
  • 13. Nanya Technology
  • 14. Patriot Memory
  • 15. Renesas Electronics Corporation
  • 16. Samsung Electronics Co. Ltd.
  • 17. Silicon Power
  • 18. SK hynix Co., Ltd.
  • 19. Sony Corporation
  • 20. Toshiba Corporation
  • 21. Transcend Information
  • 22. Western Digital Technologies Inc.
  • 23. Winbond
  • 24. Yangtze Memory Technologies Corp.
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