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¼¼°èÀÇ SiCOI(SiC-on-Insulator) Çʸ§ ½ÃÀå : ±âÀ纰, ÃÖÁ¾ ¿ëµµº° - ¿¹Ãø(2025-2030³â)

SiC-on-Insulator Film Market by Substrate Material (Polycrystalline SiC, Silicon), End-use (Aerospace & Defense, Automotive, Electronics) - Global Forecast 2025-2030

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¡á º¸°í¼­¿¡ µû¶ó ÃֽŠÁ¤º¸·Î ¾÷µ¥ÀÌÆ®ÇÏ¿© º¸³»µå¸³´Ï´Ù. ¹è¼ÛÀÏÁ¤Àº ¹®ÀÇÇØ Áֽñ⠹ٶø´Ï´Ù.

SiCOI Çʸ§ ½ÃÀåÀº 2023³â 1¾ï 3,560¸¸ ´Þ·¯·Î Æò°¡µÇ¾ú°í, 2024³â¿¡´Â 1¾ï 8,343¸¸ ´Þ·¯¿¡ À̸¦ °ÍÀ¸·Î ¿¹ÃøµÇ¸ç, CAGR 38.18%·Î ¼ºÀåÇÒ Àü¸ÁÀ̰í, 2030³â¿¡´Â 13¾ï 488¸¸ ´Þ·¯¿¡ À̸¦ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.

SiCOI Çʸ§Àº ¹ÝµµÃ¼ ±â¼úÀÇ Áß¿äÇÑ Áøº¸ÀÌ¸ç ¿ì¼öÇÑ ¿­Àüµµ¼º, È­ÇÐÀû ¾ÈÁ¤¼º ¹× ³»¹æ»ç¼ºÀ» ³ªÅ¸³»´Â °í¼º´É Àç·á¸¦ Á¦°øÇÕ´Ï´Ù. SiCOI Çʸ§Àº Ç×°ø¿ìÁÖ, ÀÚµ¿Â÷, ÀüÀÚ, ¿¡³ÊÁö µîÀÇ ºÐ¾ß¿¡ ÇØ´çÇÏ´Â °íÃâ·Â, °íÁÖÆÄ, °í¿Â ¿ëµµ ºÐ¾ß¿¡¼­ Áß¿äÇÑ ¿ªÇÒÀ» ÇÕ´Ï´Ù. ÀÌ Çʸ§Àº ÆÄ¿ö ½ºÀ§Ä¡ ¹× ¼¾¼­¿Í °°Àº ³»±¸¼º°ú È¿À²¼ºÀÌ ÇʼöÀûÀÎ ºÎǰ¿¡ °¡Àå Áß¿äÇÕ´Ï´Ù. ÀÛ°í °ß°íÇÑ ÀüÀÚ±â±â¿¡ ´ëÇÑ ¼ö¿ä´Â ƯÈ÷ Àü±âÀÚµ¿Â÷(EV) ¹× 5G ³×Æ®¿öÅ©¿Í °°Àº ½Å±â¼ú¿¡¼­ SiCOI Çʸ§ÀÇ Çʿ伺À» ³ôÀ̰í ÀÖ½À´Ï´Ù. ½ÅÀç»ý ¿¡³ÊÁö ¼Ö·ç¼Ç°ú °íµµÀÇ Åë½Å±â¼ú·ÎÀÇ À̵¿ÀÌ ¼ºÀåÀ» °ßÀÎÇÏ°í ¾ö°ÝÇÑ Á¶°Ç ÇÏ¿¡¼­µµ È®½ÇÇÏ°Ô ±â´ÉÇÏ´Â ºÎǰ¿¡ ´ëÇÑ ¿ä±¸°¡ ³ô¾ÆÁö°í ÀÖ½À´Ï´Ù. ¶ÇÇÑ ½º¸¶Æ® ±â¼úÀÇ »ó½ÂÀº º¸´Ù È¿À²ÀûÀ̰í Áö¼Ó °¡´ÉÇÑ ¹ÝµµÃ¼ ¼Ö·ç¼Ç °³¹ß¿¡ ÀáÀçÀûÀÎ ±âȸ°¡ µÇ¾ú½À´Ï´Ù. ±×·³¿¡µµ ºÒ±¸ÇÏ°í ½ÃÀå ¼ºÀåÀÇ °úÁ¦´Â ³ôÀº Á¦Á¶ ºñ¿ë, °í¼øµµ Àç·áÀÇ °¡¿ë¼º Á¦ÇÑ, ¼º¸· °øÁ¤ÀÇ ±â¼úÀû º¹À⼺À» Æ÷ÇÔÇÕ´Ï´Ù. ¶ÇÇÑ ¹ÝµµÃ¼ Á¦Á¶°¡ ȯ°æ¿¡ ¹ÌÄ¡´Â ¿µÇâ¿¡ ´ëÇÑ ÀáÀçÀûÀÎ ±ÔÁ¦ Àå¾Ö¹°µµ Á¦¾àÀ» ¹ÞÀ» ¼ö ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ °úÁ¦¿¡µµ ºÒ±¸Çϰí, º¸´Ù ºñ¿ë È¿À²ÀûÀÎ Á¦Á¶ ¹æ¹ýÀÇ °³¹ßÀ̳ª Àç·á ǰÁúÀÇ Çâ»ó µî, Àç·á ÇÕ¼ºÀ̳ª ¼º¸· ±â¼úÀÇ Çõ½ÅÀÌ ½ÃÀå È®´ë¸¦ µÞ¹ÞħÇÒ °¡´É¼ºÀÌ ÀÖ½À´Ï´Ù. SiCOI Çʸ§ÀÇ È®À强°ú ÅëÇÕ ´É·ÂÀ» Çâ»ó½ÃŰ´Â µ¥ ÁßÁ¡À» µÐ Á¶»ç´Â ´Ù¾çÇÑ »ê¾÷¿¡¼­ »õ·Î¿î ±æÀ» ¿­¾î ¿¬±¸±â°ü°ú ¹ÝµµÃ¼ ±â¾÷ °£ÀÇ Çù¾÷¿¡ Å« ±âȸ¸¦ Á¦°øÇÕ´Ï´Ù. ÇöÀç ½ÃÀå ¿ªÇÐÀ» °í·ÁÇÏ¸é ±â¾÷¿¡ ´ëÇÑ Àü·«Àû Á¦¾ÈÀº ±â¼úÀû Á¦¾àÀ» ±Øº¹Çϰí EV ¹× IoT µð¹ÙÀ̽º¿Í °°Àº ±Þ¼ºÀå ºÐ¾ß¿¡¼­ ¿ëµµ¸¦ ¸ð»öÇÏ´Â µ¥ ÁýÁßµÈ ¿¬±¸°³¹ß¿¡ ÅõÀÚÇÏ¸ç ½ÃÀå¿¡¼­ Áö¼ÓÀûÀÎ Á¸Àç°¨°ú ¼ºÀåÀ» º¸ÀåÇÏ´Â °ÍÀÔ´Ï´Ù. ½ÃÀå °æÀïÀº ¿©ÀüÈ÷ Ä¡¿­ÇÏ°í °íµµ·Î Àü¹®È­µÇ±â ¶§¹®¿¡ ¿ìÀ§¸¦ À¯ÁöÇϱâ À§Çؼ­´Â ²÷ÀÓ¾ø´Â Çõ½ÅÀÌ ÇÊ¿äÇÕ´Ï´Ù.

ÁÖ¿ä ½ÃÀå Åë°è
±âÁسâ(2023³â) 1¾ï 3,560¸¸ ´Þ·¯
ÃßÁ¤³â(2024³â) 1¾ï 8,343¸¸ ´Þ·¯
¿¹Ãø³â(2030³â) 13¾ï 488¸¸ ´Þ·¯
CAGR(%) 38.18%

½ÃÀå ¿ªÇÐ : ºü¸£°Ô ÁøÈ­ÇÏ´Â SiCOI Çʸ§ ½ÃÀåÀÇ ÁÖ¿ä ½ÃÀå ÀλçÀÌÆ® °ø°³

SiCOI Çʸ§ ½ÃÀåÀº ¼ö¿ä ¹× °ø±ÞÀÇ ¿ªµ¿ÀûÀÎ »óÈ£ ÀÛ¿ë¿¡ ÀÇÇØ º¯¸ð¸¦ ÀÌ·ç°í ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ ½ÃÀå ¿ªÇÐÀÇ ÁøÈ­¸¦ ÀÌÇØÇÏ´Â °ÍÀ¸·Î, ±â¾÷Àº ÃæºÐÇÑ Á¤º¸¿¡ ±Ù°ÅÇÑ ÅõÀÚ °áÁ¤, Àü·«Àû °áÁ¤ÀÇ Á¤¹ÐÈ­, ±×¸®°í »õ·Î¿î ºñÁî´Ï½º Âù½ºÀÇ È¹µæ¿¡ ´ëºñÇÒ ¼ö ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ µ¿ÇâÀ» Æ÷°ýÀûÀ¸·Î ÆÄ¾ÇÇÔÀ¸·Î½á ±â¾÷Àº Á¤Ä¡Àû, Áö¸®Àû, ±â¼úÀû, »çȸÀû, °æÁ¦ÀûÀÎ ¿µ¿ª¿¡ °ÉÄ£ ´Ù¾çÇÑ ¸®½ºÅ©¸¦ °æ°¨ÇÒ ¼ö ÀÖ´Â µ¿½Ã¿¡, ¼ÒºñÀÚ Çൿ°ú ±×°ÍÀÌ Á¦Á¶ ºñ¿ëÀ̳ª ±¸¸Å µ¿Çâ¿¡ ¹ÌÄ¡´Â ¿µÇâÀ» º¸´Ù ¸íÈ®ÇÏ°Ô ÀÌÇØÇÒ ¼ö ÀÖ½À´Ï´Ù.

  • ½ÃÀå ¼ºÀå ÃËÁø¿äÀÎ
    • ´Ù¾çÇÑ »ê¾÷¿¡¼­ Àü·Â È¿À²ÀÌ ¶Ù¾î³­ °í¼º´É ÀÏ·ºÆ®·Î´Ð½º¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡
    • ¼¼°èÀÇ Àü±âÀÚµ¿Â÷ÀÇ º¸±Þ È®´ë
    • ¹ÝµµÃ¼ ¼³°è¿Í ÷´Ü ±âÆÇ ±â¼ú¿¡ ´ëÇÑ ÅõÀÚ Áõ°¡
  • ½ÃÀå ¼ºÀå ¾ïÁ¦¿äÀÎ
    • SiC Àç·á¿Í °¡°ø ±â¼ú¿¡ µû¸¥ °íºñ¿ë
  • ½ÃÀå ±âȸ
    • ¹ÝµµÃ¼ Àç·áÀÇ °³¹ß°ú ÷´Ü Á¦Á¶ ±â¼úÀÇ °³¹ß
    • ½ÅÈï °æÁ¦ ±¹°¡¿¡¼­ ½ÅÀç»ý ¿¡³ÊÁö ¹× ÀÎÇÁ¶ó È®´ë
  • ½ÃÀåÀÇ °úÁ¦
    • SiCOI Çʸ§°ú °ü·ÃµÈ ±â¼úÀû ÇѰè¿Í ÅëÇÕÀÇ º¹À⼺

Porter's Five Forces : SiCOI Çʸ§ ½ÃÀåÀ» Ž»öÇÏ´Â Àü·« µµ±¸

Porter's Five Forces ÇÁ·¹ÀÓ¿öÅ©´Â SiCOI Çʸ§ ½ÃÀå °æÀï ±¸µµ¸¦ ÀÌÇØÇÏ´Â Áß¿äÇÑ µµ±¸ÀÔ´Ï´Ù. Porter's Five Forces ÇÁ·¹ÀÓ¿öÅ©´Â ±â¾÷ÀÇ °æÀï·ÂÀ» Æò°¡Çϰí Àü·«Àû ±âȸ¸¦ ã±â À§ÇÑ ¸íÈ®ÇÑ ±â¹ýÀ» Á¦°øÇÕ´Ï´Ù. ÀÌ ÇÁ·¹ÀÓ¿öÅ©´Â ±â¾÷ÀÌ ½ÃÀå ³» ÆÇµµ¸¦ Æò°¡ÇÏ°í ½Å±Ô »ç¾÷ÀÇ ¼öÀͼºÀ» ÆÇ´ÜÇÏ´Â µ¥ µµ¿òÀÌ µË´Ï´Ù. ÀÌ·¯ÇÑ ÀλçÀÌÆ®¸¦ ÅëÇØ ±â¾÷Àº ÀÚ»çÀÇ °­Á¡À» Ȱ¿ëÇϰí, ¾àÁ¡¿¡ ´ëóÇϸç, ÀáÀçÀûÀÎ °úÁ¦¸¦ ȸÇÇÇÒ ¼ö ÀÖÀ¸¸ç, º¸´Ù °­ÀÎÇÑ ½ÃÀå¿¡¼­ÀÇ Æ÷Áö¼Å´×À» È®º¸ÇÒ ¼ö ÀÖ½À´Ï´Ù.

PESTLE ºÐ¼® : SiCOI Çʸ§ ½ÃÀå¿¡¼­ ¿ÜºÎ·ÎºÎÅÍÀÇ ¿µÇâ ÆÄ¾Ç

¿ÜºÎ °Å½Ã ȯ°æ ¿äÀÎÀº SiCOI Çʸ§ ½ÃÀåÀÇ ¼º°ú ¿ªÇÐÀ» Çü¼ºÇÏ´Â µ¥ ¸Å¿ì Áß¿äÇÑ ¿ªÇÒÀ» ÇÕ´Ï´Ù. Á¤Ä¡Àû, °æÁ¦Àû, »çȸÀû, ±â¼úÀû, ¹ýÀû, ȯ°æÀû ¿äÀÎ ºÐ¼®Àº ÀÌ·¯ÇÑ ¿µÇâÀ» Ž»öÇÏ´Â µ¥ ÇÊ¿äÇÑ Á¤º¸¸¦ Á¦°øÇÕ´Ï´Ù. PESTLE ¿äÀÎÀ» Á¶»çÇÔÀ¸·Î½á ±â¾÷Àº ÀáÀçÀûÀÎ À§Çè°ú ±âȸ¸¦ ´õ Àß ÀÌÇØÇÒ ¼ö ÀÖ½À´Ï´Ù. ÀÌ ºÐ¼®À» ÅëÇØ ±â¾÷Àº ±ÔÁ¦, ¼ÒºñÀÚ ¼±È£, °æÁ¦ µ¿ÇâÀÇ º¯È­¸¦ ¿¹ÃøÇÏ°í ¾ÕÀ¸·Î ¿¹»óµÇ´Â Àû±ØÀûÀÎ ÀÇ»ç °áÁ¤À» ÇÒ Áغñ¸¦ ÇÒ ¼ö ÀÖ½À´Ï´Ù.

½ÃÀå Á¡À¯À² ºÐ¼® : SiCOI Çʸ§ ½ÃÀå¿¡¼­ °æÀï ±¸µµ ÆÄ¾Ç

SiCOI Çʸ§ ½ÃÀåÀÇ »ó¼¼ÇÑ ½ÃÀå Á¡À¯À² ºÐ¼®À» ÅëÇØ °ø±Þ¾÷üÀÇ ¼º°ú¸¦ Á¾ÇÕÀûÀ¸·Î Æò°¡ÇÒ ¼ö ÀÖ½À´Ï´Ù. ±â¾÷Àº ¼öÀÍ, °í°´ ±â¹Ý, ¼ºÀå·ü µî ÁÖ¿ä ÁöÇ¥¸¦ ºñ±³ÇÏ¿© °æÀï Æ÷Áö¼Å´×À» ¹àÈú ¼ö ÀÖ½À´Ï´Ù. ÀÌ ºÐ¼®À» ÅëÇØ ½ÃÀå ÁýÁß, ´ÜÆíÈ­, ÅëÇÕ µ¿ÇâÀ» ¹àÇô³»°í º¥´õµéÀº °æÀïÀÌ Ä¡¿­ÇØÁö´Â °¡¿îµ¥ ÀÚ»çÀÇ ÁöÀ§¸¦ ³ôÀÌ´Â Àü·«Àû ÀÇ»ç °áÁ¤À» ³»¸®´Â µ¥ ÇÊ¿äÇÑ Áö½ÄÀ» ¾òÀ» ¼ö ÀÖ½À´Ï´Ù.

FPNV Æ÷Áö¼Å´× ¸ÅÆ®¸¯½º : SiCOI Çʸ§ ½ÃÀå¿¡¼­ °ø±Þ¾÷üÀÇ ¼º´É Æò°¡

FPNV Æ÷Áö¼Å´× ¸ÅÆ®¸¯½º´Â SiCOI Çʸ§ ½ÃÀå¿¡¼­ °ø±Þ¾÷ü¸¦ Æò°¡ÇÏ´Â Áß¿äÇÑ µµ±¸ÀÔ´Ï´Ù. ÀÌ ¸ÅÆ®¸¯½º¸¦ ÅëÇØ ºñÁî´Ï½º Á¶Á÷Àº °ø±Þ¾÷üÀÇ ºñÁî´Ï½º Àü·«°ú Á¦Ç° ¸¸Á·µµ¸¦ ±âÁØÀ¸·Î Æò°¡ÇÏ¿© ¸ñÇ¥¿¡ ¸Â´Â ÃæºÐÇÑ Á¤º¸¸¦ ¹ÙÅÁÀ¸·Î ÀÇ»ç °áÁ¤À» ³»¸± ¼ö ÀÖ½À´Ï´Ù. ³× °¡Áö »çºÐ¸éÀ» ÅëÇØ °ø±Þ¾÷ü¸¦ ¸íÈ®Çϰí Á¤È®ÇÏ°Ô ¼¼ºÐÈ­ÇÏ¿© Àü·« ¸ñÇ¥¿¡ °¡Àå ÀûÇÕÇÑ ÆÄÆ®³Ê ¹× ¼Ö·ç¼ÇÀ» ÆÄ¾ÇÇÒ ¼ö ÀÖ½À´Ï´Ù.

Àü·« ºÐ¼® ¹× Ãßõ : SiCOI Çʸ§ ½ÃÀå¿¡¼­ ¼º°øÀ» À§ÇÑ ±æÀ» ±×¸®±â

SiCOI Çʸ§ ½ÃÀåÀÇ Àü·« ºÐ¼®Àº ¼¼°è ½ÃÀå¿¡¼­ÀÇ ÇÁ·¹Á𽺠°­È­¸¦ ¸ñÇ¥·Î ÇÏ´Â ±â¾÷¿¡ ÇʼöÀûÀÎ ¿ä¼ÒÀÔ´Ï´Ù. ÁÖ¿ä ÀÚ¿ø, ´É·Â ¹× ¼º°ú ÁöÇ¥¸¦ °ËÅäÇÔÀ¸·Î½á ±â¾÷Àº ¼ºÀå ±âȸ¸¦ ÆÄ¾ÇÇÏ°í °³¼±À» À§ÇØ ³ë·ÂÇÒ ¼ö ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ Á¢±Ù ¹æ½ÄÀ» ÅëÇØ °æÀï ±¸µµ¿¡¼­ °úÁ¦¸¦ ±Øº¹ÇÏ°í »õ·Î¿î ºñÁî´Ï½º ±âȸ¸¦ Ȱ¿ëÇÏ¿© Àå±âÀûÀÎ ¼º°øÀ» °ÅµÑ ¼ö Àִ üÁ¦¸¦ ±¸ÃàÇÒ ¼ö ÀÖ½À´Ï´Ù.

ÀÌ º¸°í¼­´Â ÁÖ¿ä °ü½É ºÐ¾ß¸¦ Æ÷°ýÇÏ´Â ½ÃÀåÀÇ Á¾ÇÕÀûÀÎ ºÐ¼®À» Á¦°øÇÕ´Ï´Ù.

1. ½ÃÀå ħÅõ : ÇöÀç ½ÃÀå ȯ°æÀÇ »ó¼¼ÇÑ °ËÅä, ÁÖ¿ä ±â¾÷ÀÇ ±¤¹üÀ§ÇÑ µ¥ÀÌÅÍ, ½ÃÀå µµ´Þ¹üÀ§ ¹× Àü¹ÝÀûÀÎ ¿µÇâ·ÂÀ» Æò°¡ÇÕ´Ï´Ù.

2. ½ÃÀå °³Ã´µµ : ½ÅÈï ½ÃÀåÀÇ ¼ºÀå ±âȸ¸¦ ÆÄ¾ÇÇÏ°í ±âÁ¸ ºÐ¾ßÀÇ È®Àå °¡´É¼ºÀ» Æò°¡ÇÏ¸ç ¹Ì·¡ ¼ºÀåÀ» À§ÇÑ Àü·«Àû ·Îµå¸ÊÀ» Á¦°øÇÕ´Ï´Ù.

3. ½ÃÀå ´Ù¾çÈ­ : ÃÖ±Ù Á¦Ç° Ãâ½Ã, ¹Ì°³Ã´ Áö¿ª, ¾÷°èÀÇ ÁÖ¿ä Áøº¸, ½ÃÀåÀ» Çü¼ºÇÏ´Â Àü·«Àû ÅõÀÚ¸¦ ºÐ¼®ÇÕ´Ï´Ù.

4. °æÀï Æò°¡ ¹× Á¤º¸ : °æÀï ±¸µµ¸¦ öÀúÈ÷ ºÐ¼®ÇÏ¿© ½ÃÀå Á¡À¯À², »ç¾÷ Àü·«, Á¦Ç° Æ÷Æ®Æú¸®¿À, ÀÎÁõ, ±ÔÁ¦ ´ç±¹ ½ÂÀÎ, ƯÇã µ¿Çâ, ÁÖ¿ä ±â¾÷ÀÇ ±â¼ú Áøº¸ µîÀ» °ËÁõÇÕ´Ï´Ù.

5. Á¦Ç° °³¹ß ¹× Çõ½Å : ¹Ì·¡ ½ÃÀå ¼ºÀåÀ» °¡¼ÓÇÒ °ÍÀ¸·Î ¿¹»óµÇ´Â ÃÖ÷´Ü ±â¼ú, ¿¬±¸°³¹ß Ȱµ¿, Á¦Ç° Çõ½ÅÀ» °­Á¶ÇÕ´Ï´Ù.

¶ÇÇÑ ÀÌÇØ°ü°èÀÚ°¡ ÃæºÐÇÑ Á¤º¸¸¦ ¾ò°í ÀÇ»ç°áÁ¤À» ÇÒ ¼ö ÀÖµµ·Ï Áß¿äÇÑ Áú¹®¿¡ ´ë´äÇϰí ÀÖ½À´Ï´Ù.

1. ÇöÀç ½ÃÀå ±Ô¸ð ¹× ÇâÈÄ ¼ºÀå ¿¹ÃøÀº?

2. ÃÖ°íÀÇ ÅõÀÚ ±âȸ¸¦ Á¦°øÇÏ´Â Á¦Ç°, ºÎ¹® ¹× Áö¿ªÀº ¾îµðÀԴϱî?

3. ½ÃÀåÀ» Çü¼ºÇÏ´Â ÁÖ¿ä ±â¼ú µ¿Çâ°ú ±ÔÁ¦ÀÇ ¿µÇâÀº?

4. ÁÖ¿ä º¥´õÀÇ ½ÃÀå Á¡À¯À²°ú °æÀï Æ÷Áö¼ÇÀº?

5. º¥´õ ½ÃÀå ÁøÀÔ ¹× ö¼ö Àü·«ÀÇ ¿øµ¿·ÂÀÌ µÇ´Â ¼öÀÍ¿ø°ú Àü·«Àû ±âȸ´Â ¹«¾ùÀΰ¡?

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Á¦5Àå ½ÃÀå ÀλçÀÌÆ®

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    • ÃÖÁ¾ ¿ëµµº° : Àü±âÀÚµ¿Â÷ÀÇ ÀÌ¿ëÀ¸·ÎÀÇ ÀÌÇà Áõ°¡¿¡ ÀÇÇØ SiCOI Çʸ§ ¼ö¿ä Áõ°¡
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Á¦6Àå SiCOI Çʸ§ ½ÃÀå : ±âÀ纰

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Á¦7Àå SiCOI Çʸ§ ½ÃÀå : ÃÖÁ¾ ¿ëµµº°

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  • Beijing Qinghe Jingyuan Semiconductor Technology Co., Ltd.
  • Ceramicforum Co., Ltd.
  • Coherent Corp.
  • GlobalWafers by Sino-American Silicon Products Inc.
  • Hebei Synlight Semiconductor Co.,Ltd.
  • Hitachi Energy Ltd.
  • Homray Material Technology
  • MTI Corporation
  • NGK Insulators, Ltd.
  • Precision Micro-Optics Inc.
  • ROHM Co., Ltd.
  • SICC Co.,Ltd.
  • SICOXS Corporation by Sumitomo Metal Mining Co., Ltd.
  • Soitec
  • TankeBlue Co,. Ltd.
  • Wolfspeed, Inc.
  • Xiamen Powerway Advanced Material Co. Ltd.
AJY 25.01.09

The SiC-on-Insulator Film Market was valued at USD 135.60 million in 2023, expected to reach USD 183.43 million in 2024, and is projected to grow at a CAGR of 38.18%, to USD 1,304.88 million by 2030.

SiC-on-Insulator (SiCOI) films represent a significant advancement in semiconductor technology, providing high-performance materials that exhibit superior thermal conductivity, chemical stability, and radiation resistance. SiCOI films serve crucial roles in high-power, high-frequency, and high-temperature applications, catering to sectors like aerospace, automotive, electronics, and energy. These films are paramount for components like power switches and sensors, where durability and efficiency are imperative. The demand for miniaturized and robust electronics elevates the necessity for SiCOI films, particularly in emerging technologies like electric vehicles (EVs) and 5G networks. Growth is primarily driven by the shift towards renewable energy solutions and advanced communication technologies, boosting the need for components that can perform reliably under challenging conditions. The rise of smart technologies also presents potential opportunities in developing more efficient and sustainable semiconductor solutions. Nevertheless, market growth is challenged by high manufacturing costs, limited availability of high-purity materials, and technical complexities in the deposition process. Potential regulatory hurdles pertaining to environmental impacts of semiconductor production could also pose a limitation. Despite these challenges, innovation in material synthesis and deposition techniques, such as developing more cost-effective production methods and enhancing material quality, can propel market expansion. Focused research on increasing the scalability and integration capabilities of SiCOI films can open new avenues in various industries, presenting vast opportunities for collaboration among research institutions and semiconductor companies. Given the current market dynamics, a strategic recommendation for businesses would be to invest in R&D that concentrates on overcoming technical constraints and exploring applications in rapidly growing sectors like EVs and IoT devices, ensuring sustained market presence and growth. The market's nature remains competitive and highly specialized, requiring continual innovation to maintain a leading edge.

KEY MARKET STATISTICS
Base Year [2023] USD 135.60 million
Estimated Year [2024] USD 183.43 million
Forecast Year [2030] USD 1,304.88 million
CAGR (%) 38.18%

Market Dynamics: Unveiling Key Market Insights in the Rapidly Evolving SiC-on-Insulator Film Market

The SiC-on-Insulator Film Market is undergoing transformative changes driven by a dynamic interplay of supply and demand factors. Understanding these evolving market dynamics prepares business organizations to make informed investment decisions, refine strategic decisions, and seize new opportunities. By gaining a comprehensive view of these trends, business organizations can mitigate various risks across political, geographic, technical, social, and economic domains while also gaining a clearer understanding of consumer behavior and its impact on manufacturing costs and purchasing trends.

  • Market Drivers
    • Increasing demand for power-efficient and high-performance electronics across various industries
    • Growing adoption of electric vehicles across the globe
    • Rising investments in semiconductor designs and advanced substrate technologies
  • Market Restraints
    • High cost associated with the SiC materials and processing technologies
  • Market Opportunities
    • Advancements in semiconductor materials and the development of advanced fabrication techniques
    • Expansion of renewable energy infrastructure in developing economies
  • Market Challenges
    • Technical limitations and integration complexities associated with SiC-on-insulator film

Porter's Five Forces: A Strategic Tool for Navigating the SiC-on-Insulator Film Market

Porter's five forces framework is a critical tool for understanding the competitive landscape of the SiC-on-Insulator Film Market. It offers business organizations with a clear methodology for evaluating their competitive positioning and exploring strategic opportunities. This framework helps businesses assess the power dynamics within the market and determine the profitability of new ventures. With these insights, business organizations can leverage their strengths, address weaknesses, and avoid potential challenges, ensuring a more resilient market positioning.

PESTLE Analysis: Navigating External Influences in the SiC-on-Insulator Film Market

External macro-environmental factors play a pivotal role in shaping the performance dynamics of the SiC-on-Insulator Film Market. Political, Economic, Social, Technological, Legal, and Environmental factors analysis provides the necessary information to navigate these influences. By examining PESTLE factors, businesses can better understand potential risks and opportunities. This analysis enables business organizations to anticipate changes in regulations, consumer preferences, and economic trends, ensuring they are prepared to make proactive, forward-thinking decisions.

Market Share Analysis: Understanding the Competitive Landscape in the SiC-on-Insulator Film Market

A detailed market share analysis in the SiC-on-Insulator Film Market provides a comprehensive assessment of vendors' performance. Companies can identify their competitive positioning by comparing key metrics, including revenue, customer base, and growth rates. This analysis highlights market concentration, fragmentation, and trends in consolidation, offering vendors the insights required to make strategic decisions that enhance their position in an increasingly competitive landscape.

FPNV Positioning Matrix: Evaluating Vendors' Performance in the SiC-on-Insulator Film Market

The Forefront, Pathfinder, Niche, Vital (FPNV) Positioning Matrix is a critical tool for evaluating vendors within the SiC-on-Insulator Film Market. This matrix enables business organizations to make well-informed decisions that align with their goals by assessing vendors based on their business strategy and product satisfaction. The four quadrants provide a clear and precise segmentation of vendors, helping users identify the right partners and solutions that best fit their strategic objectives.

Strategy Analysis & Recommendation: Charting a Path to Success in the SiC-on-Insulator Film Market

A strategic analysis of the SiC-on-Insulator Film Market is essential for businesses looking to strengthen their global market presence. By reviewing key resources, capabilities, and performance indicators, business organizations can identify growth opportunities and work toward improvement. This approach helps businesses navigate challenges in the competitive landscape and ensures they are well-positioned to capitalize on newer opportunities and drive long-term success.

Key Company Profiles

The report delves into recent significant developments in the SiC-on-Insulator Film Market, highlighting leading vendors and their innovative profiles. These include Beijing Qinghe Jingyuan Semiconductor Technology Co., Ltd., Ceramicforum Co., Ltd., Coherent Corp., GlobalWafers by Sino-American Silicon Products Inc., Hebei Synlight Semiconductor Co.,Ltd., Hitachi Energy Ltd., Homray Material Technology, MTI Corporation, NGK Insulators, Ltd., Precision Micro-Optics Inc., ROHM Co., Ltd., SICC Co.,Ltd., SICOXS Corporation by Sumitomo Metal Mining Co., Ltd., Soitec, TankeBlue Co,. Ltd., Wolfspeed, Inc., and Xiamen Powerway Advanced Material Co. Ltd..

Market Segmentation & Coverage

This research report categorizes the SiC-on-Insulator Film Market to forecast the revenues and analyze trends in each of the following sub-markets:

  • Based on Substrate Material, market is studied across Polycrystalline SiC and Silicon.
  • Based on End-use, market is studied across Aerospace & Defense, Automotive, Electronics, and Energy.
  • Based on Region, market is studied across Americas, Asia-Pacific, and Europe, Middle East & Africa. The Americas is further studied across Argentina, Brazil, Canada, Mexico, and United States. The United States is further studied across California, Florida, Illinois, New York, Ohio, Pennsylvania, and Texas. The Asia-Pacific is further studied across Australia, China, India, Indonesia, Japan, Malaysia, Philippines, Singapore, South Korea, Taiwan, Thailand, and Vietnam. The Europe, Middle East & Africa is further studied across Denmark, Egypt, Finland, France, Germany, Israel, Italy, Netherlands, Nigeria, Norway, Poland, Qatar, Russia, Saudi Arabia, South Africa, Spain, Sweden, Switzerland, Turkey, United Arab Emirates, and United Kingdom.

The report offers a comprehensive analysis of the market, covering key focus areas:

1. Market Penetration: A detailed review of the current market environment, including extensive data from top industry players, evaluating their market reach and overall influence.

2. Market Development: Identifies growth opportunities in emerging markets and assesses expansion potential in established sectors, providing a strategic roadmap for future growth.

3. Market Diversification: Analyzes recent product launches, untapped geographic regions, major industry advancements, and strategic investments reshaping the market.

4. Competitive Assessment & Intelligence: Provides a thorough analysis of the competitive landscape, examining market share, business strategies, product portfolios, certifications, regulatory approvals, patent trends, and technological advancements of key players.

5. Product Development & Innovation: Highlights cutting-edge technologies, R&D activities, and product innovations expected to drive future market growth.

The report also answers critical questions to aid stakeholders in making informed decisions:

1. What is the current market size, and what is the forecasted growth?

2. Which products, segments, and regions offer the best investment opportunities?

3. What are the key technology trends and regulatory influences shaping the market?

4. How do leading vendors rank in terms of market share and competitive positioning?

5. What revenue sources and strategic opportunities drive vendors' market entry or exit strategies?

Table of Contents

1. Preface

  • 1.1. Objectives of the Study
  • 1.2. Market Segmentation & Coverage
  • 1.3. Years Considered for the Study
  • 1.4. Currency & Pricing
  • 1.5. Language
  • 1.6. Stakeholders

2. Research Methodology

  • 2.1. Define: Research Objective
  • 2.2. Determine: Research Design
  • 2.3. Prepare: Research Instrument
  • 2.4. Collect: Data Source
  • 2.5. Analyze: Data Interpretation
  • 2.6. Formulate: Data Verification
  • 2.7. Publish: Research Report
  • 2.8. Repeat: Report Update

3. Executive Summary

4. Market Overview

5. Market Insights

  • 5.1. Market Dynamics
    • 5.1.1. Drivers
      • 5.1.1.1. Increasing demand for power-efficient and high-performance electronics across various industries
      • 5.1.1.2. Growing adoption of electric vehicles across the globe
      • 5.1.1.3. Rising investments in semiconductor designs and advanced substrate technologies
    • 5.1.2. Restraints
      • 5.1.2.1. High cost associated with the SiC materials and processing technologies
    • 5.1.3. Opportunities
      • 5.1.3.1. Advancements in semiconductor materials and the development of advanced fabrication techniques
      • 5.1.3.2. Expansion of renewable energy infrastructure in developing economies
    • 5.1.4. Challenges
      • 5.1.4.1. Technical limitations and integration complexities associated with SiC-on-insulator film
  • 5.2. Market Segmentation Analysis
    • 5.2.1. Substrate Material: Growing preference for silicon substrates due to its high performance and scalability
    • 5.2.2. End-use: Increasing shift towards the use of electric vehicle boost the demand of SiC-on-insulator film
  • 5.3. Porter's Five Forces Analysis
    • 5.3.1. Threat of New Entrants
    • 5.3.2. Threat of Substitutes
    • 5.3.3. Bargaining Power of Customers
    • 5.3.4. Bargaining Power of Suppliers
    • 5.3.5. Industry Rivalry
  • 5.4. PESTLE Analysis
    • 5.4.1. Political
    • 5.4.2. Economic
    • 5.4.3. Social
    • 5.4.4. Technological
    • 5.4.5. Legal
    • 5.4.6. Environmental

6. SiC-on-Insulator Film Market, by Substrate Material

  • 6.1. Introduction
  • 6.2. Polycrystalline SiC
  • 6.3. Silicon

7. SiC-on-Insulator Film Market, by End-use

  • 7.1. Introduction
  • 7.2. Aerospace & Defense
  • 7.3. Automotive
  • 7.4. Electronics
  • 7.5. Energy

8. Americas SiC-on-Insulator Film Market

  • 8.1. Introduction
  • 8.2. Argentina
  • 8.3. Brazil
  • 8.4. Canada
  • 8.5. Mexico
  • 8.6. United States

9. Asia-Pacific SiC-on-Insulator Film Market

  • 9.1. Introduction
  • 9.2. Australia
  • 9.3. China
  • 9.4. India
  • 9.5. Indonesia
  • 9.6. Japan
  • 9.7. Malaysia
  • 9.8. Philippines
  • 9.9. Singapore
  • 9.10. South Korea
  • 9.11. Taiwan
  • 9.12. Thailand
  • 9.13. Vietnam

10. Europe, Middle East & Africa SiC-on-Insulator Film Market

  • 10.1. Introduction
  • 10.2. Denmark
  • 10.3. Egypt
  • 10.4. Finland
  • 10.5. France
  • 10.6. Germany
  • 10.7. Israel
  • 10.8. Italy
  • 10.9. Netherlands
  • 10.10. Nigeria
  • 10.11. Norway
  • 10.12. Poland
  • 10.13. Qatar
  • 10.14. Russia
  • 10.15. Saudi Arabia
  • 10.16. South Africa
  • 10.17. Spain
  • 10.18. Sweden
  • 10.19. Switzerland
  • 10.20. Turkey
  • 10.21. United Arab Emirates
  • 10.22. United Kingdom

11. Competitive Landscape

  • 11.1. Market Share Analysis, 2023
  • 11.2. FPNV Positioning Matrix, 2023
  • 11.3. Competitive Scenario Analysis
    • 11.3.1. ROHM Group Enhances SiC Power Device Production with Strategic Acquisition
    • 11.3.2. GlobiTech Advances into the Silicon Carbide Market with AIXTRON Technology
    • 11.3.3. University of Arkansas Advances in Semiconductor Technology with Key Equipment Acquisition
  • 11.4. Strategy Analysis & Recommendation

Companies Mentioned

  • 1. Beijing Qinghe Jingyuan Semiconductor Technology Co., Ltd.
  • 2. Ceramicforum Co., Ltd.
  • 3. Coherent Corp.
  • 4. GlobalWafers by Sino-American Silicon Products Inc.
  • 5. Hebei Synlight Semiconductor Co.,Ltd.
  • 6. Hitachi Energy Ltd.
  • 7. Homray Material Technology
  • 8. MTI Corporation
  • 9. NGK Insulators, Ltd.
  • 10. Precision Micro-Optics Inc.
  • 11. ROHM Co., Ltd.
  • 12. SICC Co.,Ltd.
  • 13. SICOXS Corporation by Sumitomo Metal Mining Co., Ltd.
  • 14. Soitec
  • 15. TankeBlue Co,. Ltd.
  • 16. Wolfspeed, Inc.
  • 17. Xiamen Powerway Advanced Material Co. Ltd.
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