시장보고서
상품코드
1925511

SiC와 GaN 파워 디바이스 시장 : 재료별, 디바이스 유형별, 정격 출력별, 판매 채널별, 용도별 - 세계 예측(2026-2032년)

SiC & GaN Power Devices Market by Material, Device Type, Power Rating, Sales Channel, Application - Global Forecast 2026-2032

발행일: | 리서치사: 360iResearch | 페이지 정보: 영문 181 Pages | 배송안내 : 1-2일 (영업일 기준)

    
    
    




■ 보고서에 따라 최신 정보로 업데이트하여 보내드립니다. 배송일정은 문의해 주시기 바랍니다.

2025년 SiC와 GaN 파워 디바이스 시장 규모는 54억 8,000만 달러로 평가되며, 2026년에는 62억 달러에 달할 것으로 예측됩니다. CAGR은 13.76%로, 2032년까지 135억 2,000만 달러에 달할 전망입니다.

주요 시장 통계
기준연도 2025년 54억 8,000만 달러
추정연도 2026년 62억 달러
예측연도 2032년 135억 2,000만 달러
CAGR(%) 13.76%

실리콘 카바이드(SiC)와 갈륨 나이탈리아드(GaN)가 파워 일렉트로닉스의 설계, 조달 및 상업화 우선순위를 어떻게 재구성하고 있는지에 대한 간략한 전략적 소개

파워 일렉트로닉스 부문은 특히 실리콘 카바이드(SiC)와 질화갈륨(GaN) 등 광대역 갭 반도체가 주도하는 기술 혁신의 전환기를 맞이하고 있습니다. 이 소재들은 기존 실리콘 기술에 비해 더 높은 스위칭 주파수, 우수한 열전도율, 높은 효율을 실현함으로써 전력 소자의 성능 한계를 재정의하고 있습니다. 그 결과, 자동차 전동화, 재생에너지 통합, 통신 인프라, 소비자 전원 어댑터 등 다양한 분야의 엔지니어링 팀은 크기, 무게, 열 관리 및 전체 에너지 소비량에서 시스템 수준의 개선을 달성하기 위해 부품 수준의 선택을 재평가했습니다. 재평가했습니다.

파워 디바이스 생태계를 재구성하는 중요한 변화가 진행 중이며, 엔지니어링, 조달 및 상업 부문의 각 팀은 통합 및 조달 전략을 재검토해야

파워 반도체의 환경은 여러 축을 따라 변화하고 있으며, 이러한 변화는 기술적, 상업적 성격을 동시에 가지고 있습니다. GaN 에피택시 및 SiC 웨이퍼 생산의 급속한 발전으로 인해 단가의 장벽이 낮아지고, 디바이스 제조업체는 더 높은 주파수와 온도 한계에 도전할 수 있게 되었습니다. 동시에 시스템 설계자들은 광대역 갭 디바이스의 스위칭 특성을 활용한 컴팩트하고 고효율적인 토폴로지로의 설계 전환을 추진하고 있습니다. 이러한 기술적 발전은 반도체 제조업체, 모듈 통합 기업, 시스템 OEM 간의 새로운 협력을 촉진하고 생태계 차원의 재구축을 가속화하고 있습니다.

2025년 관세 환경이 파워 디바이스 밸류체인 전반의 조달 선택, 제조 현지화 논의, 리스크 완화 전략을 어떻게 재구성하고 있는가?

2025년에 도입 및 진화한 관세는 첨단 전력 장치를 취급하는 기업에게 공급망 변동성을 증폭시키고 전략적 무역 고려 사항을 중요하게 만드는 결과를 가져왔습니다. 관세 조치는 단기적으로 공급업체 선정에 영향을 미쳐 바이어 측이 조달 지역, 재고 정책, 계약 조건을 재평가하여 관세 부담을 줄일 수 있도록 유도했습니다. 그 결과, 유연한 조달 프레임워크와 다양한 공급업체 기반을 갖춘 기업은 비용 변동을 흡수하고 주요 프로그램에 대한 납품 약속을 유지하는 데 더 유리한 위치에 서게 됩니다.

상세한 세분화 분석을 통해 재료 선택, 장치 구조, 응용 분야, 전력 대역, 유통 채널이 어떻게 기술 전략과 상업적 전략을 독자적으로 형성하는지 파악할 수 있습니다.

신중한 세분화 분석을 통해 재료, 장치 유형, 용도, 정격 출력, 유통 채널에 따라 서로 다른 채택 패턴과 기술 우선순위를 파악할 수 있습니다. 각각에 특화된 상업적-기술적 접근이 요구됩니다. 질화갈륨(GaN)과 탄화규소(SiC)의 재료 특성에 따른 차이는 설계상의 트레이드오프를 만듭니다. GaN은 고주파 동작과 컴팩트한 설계가 가능하며, 자동차 충전기 및 데이터센터 전원 공급 장치에 적합합니다. 반면 SiC는 고전압 및 고온 환경에서의 작동이 우수하여 전기 파워트레인 및 대형 인버터에 선호됩니다. 이러한 재료 특성은 설계 팀에게 고유한 인증 프로세스 및 열 관리 로드맵을 결정합니다.

지역별 수요 패턴과 규제 체계(아메리카, 유럽, 중동/아프리카, 아시아태평양)에 따라 공급망 설계, 인증 획득, 시장 출시 전략이 결정됩니다.

지역별 동향은 채용 채널, 공급망 설계, 공급업체 전략에 중대한 영향을 미칩니다. 기업 리더는 이를 예측하고 계획에 반영해야 합니다. 북미와 남미에서는 전기화 프로그램과 하이퍼스케일 데이터센터의 강력한 수요 신호로 인해 고전압 SiC 디바이스와 소형 GaN 솔루션에 대한 관심이 높아지고 있으며, 인증 획득과 국내 생산 능력 확대를 위한 대규모 투자가 이루어지고 있습니다. 정책적 인센티브와 조달 우선순위는 안정적인 공급과 제조 공정의 추적성을 입증할 수 있는 공급업체를 우대하는 경향이 있으며, 이는 단기적인 현지화 구상을 지원하고 있습니다.

SiC 및 GaN 생태계에서 경쟁 우위를 결정짓는 제조 규모, 지적재산권(IP) 차별화 및 통합 파트너십의 중요성에 대한 기업 수준의 인사이트

광대역 갭 반도체 부문의 기업 전략은 상호 연관된 세 가지 우선순위를 반영하고 있습니다. 제조 능력의 규모, 지적재산권(IP)과 소재에 대한 노하우, 시스템 차원의 통합 파트너십입니다. 주요 업체들은 웨이퍼 공급 관리 및 단가 절감을 위한 생산 능력 확대를 추진하고, 디바이스 수율 및 신뢰성 향상을 위한 에피택셜 성장 기술 및 패키징 기술에 투자하고, 모듈 및 컨버터 통합을 지원하는 엔지니어링 생태계를 구축하고 있습니다. 일부 기업은 밸류체인 전반에 걸쳐 더 많은 가치를 창출하기 위해 수직적 통합을 중시하는 반면, 다른 기업은 시장 진입과 검증 주기를 가속화하기 위해 전략적 파트너십에 초점을 맞추었습니다.

공급망 복원력과 인증 프로세스를 강화하는 동시에 엔지니어링, 조달 및 상업 전략을 동기화할 수 있는 실용적인 권장 사항 제공

업계 리더는 기술 로드맵, 상업 모델, 공급망 탄력성을 일치시키는 일련의 협력적 행동을 채택하여 광대역 갭 파워 디바이스의 잠재력을 최대한 발휘해야 합니다. 첫째, 제품 개발, 조달, 고객 엔지니어링을 연계하는 부서 간 거버넌스를 통합하고, 재료 선택과 디바이스 아키텍처에 대한 의사결정을 시스템 수준에서 명확히 할 수 있도록 합니다. 이 접근 방식은 재설계 반복 횟수를 줄이고 인증까지 걸리는 시간을 단축할 수 있습니다. 다음으로, 공급업체를 여러 지역과 계약 형태로 분산시켜 단일 공급처에 대한 의존도를 낮추고, 주요 프로그램 일정을 지원하는 생산 능력 배분에 대해 협상해야 합니다.

이해관계자 인터뷰, 기술 검증, 특허 매핑, 공급망 시나리오 분석을 결합한 종합적인 조사 방법을 통해 확고한 감사 가능한 결과를 보장

이러한 결과를 지원하는 조사에서는 산업 이해관계자와의 직접 대화와 엄격한 2차 분석을 통합한 복합적인 조사 방식을 채택하여 기술적, 상업적 신호를 검증했습니다. 1차 조사에서는 파워 디바이스 엔지니어, 조달 책임자, 모듈 통합업체, 시스템 OEM 의사결정권자를 대상으로 구조화된 인터뷰를 실시하여 실제 환경에서의 인증의 문제점, 공급업체 선정 기준, 유통 채널의 동향을 파악했습니다. 이러한 대화는 디바이스 데이터 시트의 기술 검토, 신뢰성 검사 프로토콜, 공개된 제조 공정 개선 정보 분석과 상호보완적으로 진행되어 제품 성능에 대한 주장을 다각도로 검증했습니다.

SiC와 GaN의 기술적 우위를 조정된 실행과 리스크 관리를 통해 재현 가능한 상업적 우위로 전환할 수 있는 궁극적인 전망

실리콘 카바이드(SiC) 및 질화갈륨(GaN) 전력 소자의 발전 채널은 주요 최종 시장에서 전력 변환 및 열 관리 설계 방식에 지속적인 변화를 가져오고 있습니다. 스위칭 속도, 내열성, 효율성의 기술적 우위는 시스템 레벨의 재설계를 촉진하여 전체 소형화 및 에너지 성능 향상을 실현하고 있습니다. 한편, 상업적 요구는 공급업체에게 생산 규모 확대, 장기적인 신뢰성 입증, 지역별 조달 및 규제 환경에 대한 적응을 요구하고 있습니다. 따라서 의사결정자는 재료 선택, 장치 아키텍처, 채널 전략을 하나의 통합 계획으로 통합하여 전체 시스템의 이점을 극대화해야 합니다.

자주 묻는 질문

  • 2025년 SiC와 GaN 파워 디바이스 시장 규모는 어떻게 되나요?
  • 2026년 SiC와 GaN 파워 디바이스 시장 규모는 어떻게 예측되나요?
  • 2032년 SiC와 GaN 파워 디바이스 시장 규모는 어떻게 될 것으로 전망되나요?
  • SiC와 GaN 파워 디바이스의 CAGR은 어떻게 되나요?
  • SiC와 GaN 파워 디바이스의 기술 혁신이 어떤 영향을 미치고 있나요?
  • 2025년 관세 환경이 파워 디바이스 밸류체인에 미치는 영향은 무엇인가요?
  • SiC와 GaN의 재료 특성이 설계에 미치는 영향은 무엇인가요?
  • SiC와 GaN 생태계에서 경쟁 우위를 결정짓는 요소는 무엇인가요?

목차

제1장 서문

제2장 조사 방법

제3장 개요

제4장 시장 개요

제5장 시장 인사이트

제6장 미국 관세의 누적 영향, 2025년

제7장 AI의 누적 영향, 2025년

제8장 SiC와 GaN 파워 디바이스 시장 : 재료별

제9장 SiC와 GaN 파워 디바이스 시장 : 디바이스 유형별

제10장 SiC와 GaN 파워 디바이스 시장 : 정격 출력별

제11장 SiC와 GaN 파워 디바이스 시장 : 유통 채널별

제12장 SiC와 GaN 파워 디바이스 시장 : 용도별

제13장 SiC와 GaN 파워 디바이스 시장 : 지역별

제14장 SiC와 GaN 파워 디바이스 시장 : 그룹별

제15장 SiC와 GaN 파워 디바이스 시장 : 국가별

제16장 미국의 SiC와 GaN 파워 디바이스 시장

제17장 중국의 SiC와 GaN 파워 디바이스 시장

제18장 경쟁 구도

KSA 26.02.23

The SiC & GaN Power Devices Market was valued at USD 5.48 billion in 2025 and is projected to grow to USD 6.20 billion in 2026, with a CAGR of 13.76%, reaching USD 13.52 billion by 2032.

KEY MARKET STATISTICS
Base Year [2025] USD 5.48 billion
Estimated Year [2026] USD 6.20 billion
Forecast Year [2032] USD 13.52 billion
CAGR (%) 13.76%

Concise strategic introduction to how Silicon Carbide and Gallium Nitride are reshaping power electronics design, procurement, and commercialization priorities

The power electronics landscape is undergoing a transformative technical renaissance driven by wide bandgap semiconductors, most notably Silicon Carbide and Gallium Nitride. These materials are redefining performance envelopes for power devices by delivering higher switching frequencies, improved thermal conductivity, and greater efficiency relative to legacy silicon technologies. As a result, engineering teams across automotive electrification, renewable energy integration, telecommunications infrastructure, and consumer power adaptors are re-evaluating component-level choices to achieve system-level gains in size, weight, thermal management, and overall energy consumption

Against this backdrop, stakeholders must interpret technology signals with commercial pragmatism. Manufacturers face the dual challenge of accelerating product qualification cycles while managing supply chain complexity and production cost dynamics. Design teams are pressured to exploit the electrical advantages of GaN and SiC without introducing unacceptable reliability or manufacturability risks. Meanwhile, procurement and strategy leaders need a clear lens on how supplier roadmaps, materials availability, and regulatory factors will affect time to market and total cost of ownership. Consequently, this introduction frames the essential technical attributes, adoption drivers, and strategic questions that will guide decision-makers as they navigate the next phase of power device adoption

Critical transformative shifts reshaping the power device ecosystem that compel engineering, procurement, and commercial teams to rethink integration and sourcing strategies

The landscape for power semiconductors is shifting along multiple axes, and these changes are both technical and commercial in nature. Rapid improvements in GaN epitaxy and SiC wafer production are lowering per-unit barriers and enabling device makers to push higher frequency and temperature limits. Concurrently, systems architects are migrating designs toward compact, high-efficiency topologies that leverage the switching advantages of wide bandgap devices. This technical momentum is catalyzing new partnerships between semiconductor firms, module integrators, and system OEMs, accelerating an ecosystem-level reconfiguration

On the commercial front, we observe a move toward greater vertical integration among key suppliers to manage yield and ensure quality at scale. At the same time, contract manufacturers and Tier 1 suppliers are retooling for module-level assembly and testing to shorten qualification cycles for automotive and industrial customers. These transformative shifts are also changing buyer behavior: product teams prioritize lifecycle reliability, thermal design validation, and supplier roadmaps as decision determinants. Consequently, strategic leaders must coordinate cross-functional capabilities-R&D, supply chain, quality, and sales-to capture the opportunities that arise from this once-in-a-generation change in power device capability

How the 2025 tariff environment reshaped procurement choices, manufacturing localization debates, and risk mitigation strategies across the power device value chain

The imposition and evolution of tariffs in 2025 have compounded supply chain volatility and elevated strategic trade considerations for companies working with advanced power devices. Tariff measures have influenced short-term supplier selection and prompted buyers to re-evaluate sourcing geographies, inventory policies, and contractual terms to mitigate duty exposure. As a result, firms with flexible procurement frameworks and diversified supplier bases have been better positioned to absorb cost swings and preserve delivery commitments to critical programs

In addition, tariffs have accelerated discussions around regional manufacturing and qualified local content for sensitive applications such as automotive electrification and national infrastructure projects. Firms contemplating onshoring or nearshoring production have had to balance higher fixed-capex commitments against the operational benefits of reduced cross-border risk and improved lead time predictability. Regulatory friction also amplified the importance of trade compliance capabilities and tariff engineering-reclassifying product assemblies or altering packaging and processing steps to optimize duty treatment. Consequently, organizations that built proactive tariff playbooks, renegotiated long-term purchase agreements, and strengthened their customs and trade advisory capabilities managed disruption more effectively and retained competitive advantage during this period of heightened trade complexity

Detailed segmentation insights revealing how material choices, device architecture, application niches, power bands, and sales channels uniquely shape technology and commercial strategies

A careful segmentation lens reveals differentiated adoption patterns and technical priorities across materials, device types, applications, power ratings, and distribution channels, each of which demands bespoke commercial and engineering approaches. Material differentiation between Gallium Nitride and Silicon Carbide creates distinct design trade-offs: GaN often enables higher frequency and compact form factors that suit on-board chargers and data center power supplies, while SiC typically supports higher voltage, high-temperature applications favored in electric powertrains and large inverters. These material characteristics drive unique qualification and thermal management roadmaps for design teams

Device type segmentation further clarifies deployment pathways, where discrete devices such as JFETs, MOSFETs, and Schottky diodes remain critical for component-level optimization and cost-sensitive assemblies, while power modules-available as full bridge and half bridge configurations-simplify system integration for high-power applications and accelerate validation cycles. Application segmentation demonstrates where priorities diverge: automotive programs, encompassing advanced driver assistance systems and electric vehicles, impose stringent reliability and automotive-grade qualification timelines; consumer electronics applications such as chargers and power adapters prioritize space efficiency and manufacturability; industrial uses including motor drives and uninterruptible power supply systems demand predictable thermal performance and long lifecycle support; renewable deployments in solar inverters and wind turbine converters prioritize converter efficiency and serviceability; and telecommunications implementations in 5G infrastructure and data center power emphasize density, redundancy, and thermal scaling

Power rating segmentation further informs product architecture and testing strategies, spanning small form factors up to 100 watts where cost and integration density dominate design choices, mid-range bands from 100 to 500 watts where efficiency and thermal trade-offs become central, the 500-watt to 1-kilowatt window that is commonly split into 500 to 750 and 750 to 1,000 watt bands for precise converter optimization, and higher tiers above 1 kilowatt that subdivide into 1 to 5 kilowatts and above 5 kilowatts for heavy industrial and utility-scale applications that prioritize robustness and maintainability. Finally, sales channel segmentation-aftermarket with authorized and unauthorized resellers, distribution via direct and indirect channels, and the original equipment manufacturer landscape comprising Tier 1 and Tier 2 manufacturers-shapes go-to-market, warranty strategy, and post-sale support models, requiring manufacturers to tailor commercial terms, packaging, and technical documentation to each route to market

How regional demand patterns and regulatory regimes across the Americas, Europe Middle East & Africa, and Asia-Pacific dictate supply chain design, certification, and go-to-market choices

Regional dynamics materially influence adoption pathways, supply chain design, and supplier strategies in ways that company leaders must anticipate and incorporate into their planning. In the Americas, strong demand signals from electrification programs and hyperscale data centers have elevated interest in high-voltage SiC devices and compact GaN solutions, prompting significant investment in qualification and domestic capacity expansions. Policy incentives and procurement priorities often favor suppliers that can demonstrate secure supply and traceable manufacturing, which in turn supports near-term localization initiatives

Europe, the Middle East & Africa present a complex mosaic of regulatory standards, industrial electrification imperatives, and infrastructure modernization projects. This region places a premium on sustainability reporting, lifecycle emissions considerations, and compliance with stringent automotive and grid interconnection standards. Consequently, manufacturers targeting EMEA customers emphasize demonstrable reliability, long-term support commitments, and partnerships with local integrators to ease certification and deployment

Asia-Pacific remains a battleground for scale and cost competitiveness. A dense manufacturing ecosystem, robust contract manufacturing capabilities, and proximity to key materials supply chains make this region pivotal for both module assembly and component-level production. At the same time, rising domestic demand for electric mobility, renewable integration, and 5G rollout creates sizable application pull that benefits vertically integrated suppliers and nimble specialized manufacturers alike. Across all regions, firms that align production footprints with regional demand profiles, regulatory expectations, and service ecosystems are better positioned to sustain commercial momentum

Key company-level insights explaining how manufacturing scale, IP differentiation, and integration partnerships determine competitive advantage in the SiC and GaN ecosystem

Company strategies in the wide bandgap semiconductor space reflect three interlinked priorities: scale of manufacturing capability, IP and materials know-how, and systems-level integration partnerships. Leading firms have pursued capacity expansion to control wafer supply and to reduce per-unit costs, invested in epitaxial and packaging expertise to improve device yield and reliability, and built engineering ecosystems that support module and converter integration. Some firms are emphasizing vertical integration to capture more value across the stack, while others focus on strategic partnerships to accelerate market access and validation cycles

Competitive advantage is increasingly tied to differentiated IP, robust qualification suites for demanding applications, and an ability to respond to customer-specific needs such as automotive-grade processes, extended temperature ranges, or bespoke module topologies. Companies that have established multi-disciplinary teams-combining materials scientists, power electronics engineers, and systems architects-tend to shorten design cycles and reduce field failure risk. Furthermore, those that invest in pilot production, accelerated lifetime testing, and in-field monitoring capabilities gain credibility with industrial and automotive customers who require demonstrable performance over long operational lives. Strategic M&A, licensing arrangements, and supply agreements with wafer-foundries or substrate suppliers remain common moves to secure raw material continuity and to create defensible manufacturing advantages

Actionable recommendations for leaders to synchronize engineering, procurement, and commercial strategies while fortifying supply chain resilience and qualification processes

Industry leaders should adopt a coordinated set of actions that align technical roadmaps, commercial models, and supply chain resilience to capture the full potential of wide bandgap power devices. First, embed cross-functional governance that links product development, procurement, and customer engineering so decisions on material selection and device architecture are made with system-level clarity. This approach reduces redesign iterations and accelerates time to qualification. Second, diversify supplier exposure across multiple geographies and contractual modalities to reduce reliance on single-source inputs while negotiating capacity allocations that support critical program timelines

Third, invest in thermal management and reliability testing early in the development cycle to avoid late-stage surprises and to shorten customer qualification. Fourth, tailor go-to-market strategies by channel: OEM engagements require deep engineering support and long-term quality commitments, whereas distribution and aftermarket channels benefit from productized modules and clear warranty frameworks. Fifth, pursue partnerships with module integrators and converter houses to expedite system-level validation, which is especially important for applications with strict certification regimes such as automotive and grid interconnection. Finally, enhance trade compliance capabilities and scenario planning to respond to tariff changes and geopolitical shifts; organizations that build robust tariff playbooks and maintain flexible logistics options will better preserve margins and delivery performance in turbulent policy environments

Comprehensive research methodology combining stakeholder interviews, technical validation, patent mapping, and supply chain scenario analysis to ensure robust and auditable insights

The research underpinning these insights employed a blended methodology that integrates primary engagement with industry stakeholders and rigorous secondary analysis to validate technical and commercial signals. Primary research consisted of structured interviews with power device engineers, procurement leads, module integrators, and system OEM decision-makers to capture real-world qualification pain points, supplier selection criteria, and channel dynamics. These conversations were complemented by technical reviews of device datasheets, reliability test protocols, and publicly disclosed manufacturing process improvements to triangulate product capability claims

Secondary analysis included mapping patent trends, tracking public capital investment activity in wafer and packaging capacity, and reviewing standards and certification frameworks that affect deployment in automotive, industrial, renewable, and telecom sectors. Supply chain mapping identified critical upstream inputs and potential single points of failure, and scenario analysis explored the operational implications of policy interventions such as tariffs and export controls. Where applicable, lifecycle and thermal modeling exercises were used to compare relative system impacts of material and device choices. The methodology prioritized reproducibility and transparency, documenting assumptions and data sources to ensure that conclusions are auditable and actionable for engineering and commercial teams

Concluding perspective on translating the technical promise of SiC and GaN into repeatable commercial advantage through coordinated execution and risk management

The trajectory of Silicon Carbide and Gallium Nitride power devices signals a durable shift in how power conversion and thermal management are designed across key end markets. Technical advantages in switching speed, thermal tolerance, and efficiency are prompting systems-level redesigns that reduce overall size and improve energy performance, while commercial imperatives push suppliers to scale manufacturing, demonstrate long-term reliability, and align with regional procurement and regulatory realities. Decision-makers must therefore integrate material selection, device architecture, and channel strategy into a single coordinated plan to realize the full system benefits

In this environment, winners will be those organizations that combine technical mastery with disciplined commercial execution: investing in qualification, diversifying supply chains, and tailoring product and support models by region and application. By doing so, firms can capture the operational efficiencies and competitive differentiation offered by SiC and GaN technologies while managing the complex trade-offs introduced by tariffs, certification regimes, and evolving customer expectations. The imperative is clear: translate technical opportunity into repeatable, high-quality deployments through cross-functional alignment and disciplined execution

Table of Contents

1. Preface

  • 1.1. Objectives of the Study
  • 1.2. Market Definition
  • 1.3. Market Segmentation & Coverage
  • 1.4. Years Considered for the Study
  • 1.5. Currency Considered for the Study
  • 1.6. Language Considered for the Study
  • 1.7. Key Stakeholders

2. Research Methodology

  • 2.1. Introduction
  • 2.2. Research Design
    • 2.2.1. Primary Research
    • 2.2.2. Secondary Research
  • 2.3. Research Framework
    • 2.3.1. Qualitative Analysis
    • 2.3.2. Quantitative Analysis
  • 2.4. Market Size Estimation
    • 2.4.1. Top-Down Approach
    • 2.4.2. Bottom-Up Approach
  • 2.5. Data Triangulation
  • 2.6. Research Outcomes
  • 2.7. Research Assumptions
  • 2.8. Research Limitations

3. Executive Summary

  • 3.1. Introduction
  • 3.2. CXO Perspective
  • 3.3. Market Size & Growth Trends
  • 3.4. Market Share Analysis, 2025
  • 3.5. FPNV Positioning Matrix, 2025
  • 3.6. New Revenue Opportunities
  • 3.7. Next-Generation Business Models
  • 3.8. Industry Roadmap

4. Market Overview

  • 4.1. Introduction
  • 4.2. Industry Ecosystem & Value Chain Analysis
    • 4.2.1. Supply-Side Analysis
    • 4.2.2. Demand-Side Analysis
    • 4.2.3. Stakeholder Analysis
  • 4.3. Porter's Five Forces Analysis
  • 4.4. PESTLE Analysis
  • 4.5. Market Outlook
    • 4.5.1. Near-Term Market Outlook (0-2 Years)
    • 4.5.2. Medium-Term Market Outlook (3-5 Years)
    • 4.5.3. Long-Term Market Outlook (5-10 Years)
  • 4.6. Go-to-Market Strategy

5. Market Insights

  • 5.1. Consumer Insights & End-User Perspective
  • 5.2. Consumer Experience Benchmarking
  • 5.3. Opportunity Mapping
  • 5.4. Distribution Channel Analysis
  • 5.5. Pricing Trend Analysis
  • 5.6. Regulatory Compliance & Standards Framework
  • 5.7. ESG & Sustainability Analysis
  • 5.8. Disruption & Risk Scenarios
  • 5.9. Return on Investment & Cost-Benefit Analysis

6. Cumulative Impact of United States Tariffs 2025

7. Cumulative Impact of Artificial Intelligence 2025

8. SiC & GaN Power Devices Market, by Material

  • 8.1. Gallium Nitride
  • 8.2. Silicon Carbide

9. SiC & GaN Power Devices Market, by Device Type

  • 9.1. Discrete
    • 9.1.1. Jfet
    • 9.1.2. Mosfet
    • 9.1.3. Schottky Diode
  • 9.2. Module
    • 9.2.1. Full Bridge Module
    • 9.2.2. Half Bridge Module

10. SiC & GaN Power Devices Market, by Power Rating

  • 10.1. 100 To 500W
  • 10.2. 500W To 1kW
    • 10.2.1. 500 To 750W
    • 10.2.2. 750W To 1kW
  • 10.3. Above 1kW
  • 10.4. Below 100W

11. SiC & GaN Power Devices Market, by Sales Channel

  • 11.1. Online
  • 11.2. Offline

12. SiC & GaN Power Devices Market, by Application

  • 12.1. Automotive
  • 12.2. Consumer Electronics
  • 12.3. Industrial
  • 12.4. Renewable Energy
  • 12.5. Telecommunications

13. SiC & GaN Power Devices Market, by Region

  • 13.1. Americas
    • 13.1.1. North America
    • 13.1.2. Latin America
  • 13.2. Europe, Middle East & Africa
    • 13.2.1. Europe
    • 13.2.2. Middle East
    • 13.2.3. Africa
  • 13.3. Asia-Pacific

14. SiC & GaN Power Devices Market, by Group

  • 14.1. ASEAN
  • 14.2. GCC
  • 14.3. European Union
  • 14.4. BRICS
  • 14.5. G7
  • 14.6. NATO

15. SiC & GaN Power Devices Market, by Country

  • 15.1. United States
  • 15.2. Canada
  • 15.3. Mexico
  • 15.4. Brazil
  • 15.5. United Kingdom
  • 15.6. Germany
  • 15.7. France
  • 15.8. Russia
  • 15.9. Italy
  • 15.10. Spain
  • 15.11. China
  • 15.12. India
  • 15.13. Japan
  • 15.14. Australia
  • 15.15. South Korea

16. United States SiC & GaN Power Devices Market

17. China SiC & GaN Power Devices Market

18. Competitive Landscape

  • 18.1. Market Concentration Analysis, 2025
    • 18.1.1. Concentration Ratio (CR)
    • 18.1.2. Herfindahl Hirschman Index (HHI)
  • 18.2. Recent Developments & Impact Analysis, 2025
  • 18.3. Product Portfolio Analysis, 2025
  • 18.4. Benchmarking Analysis, 2025
  • 18.5. Alpha & Omega Semiconductor Limited
  • 18.6. Efficient Power Conversion Corporation
  • 18.7. Fuji Electric Co., Ltd.
  • 18.8. GaN Systems
  • 18.9. Infineon Technologies AG
  • 18.10. Littelfuse, Inc.
  • 18.11. Microchip Technology Incorporated
  • 18.12. Mitsubishi Electric Corporation
  • 18.13. Monolithic Power Systems, Inc.
  • 18.14. Navitas Semiconductor
  • 18.15. Nexperia B.V.
  • 18.16. NXP Semiconductors N.V.
  • 18.17. ON Semiconductor Corporation
  • 18.18. Panasonic Corporation
  • 18.19. Power Integrations, Inc.
  • 18.20. Qorvo, Inc.
  • 18.21. Renesas Electronics Corporation
  • 18.22. ROHM Co., Ltd.
  • 18.23. Sanken Electric Co., Ltd.
  • 18.24. SEMIKRON International GmbH
  • 18.25. STMicroelectronics N.V.
  • 18.26. Sumitomo Electric Device Innovations
  • 18.27. Texas Instruments Incorporated
  • 18.28. Toshiba Corporation
  • 18.29. Wolfspeed, Inc.
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