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파워 SiC(MOSFET - SBD - 모듈) : 특허 상황 분석

Power SiC: MOSFETs - SBDs - Modules, Patent Landscape Analysis

리서치사 Knowmade
발행일 2019년 01월 상품 코드 778077
페이지 정보 영문 PDF >130 slides, Excel file with >3,800 patents
US $ 6,889 ₩ 8,419,000 PDF and Excel file by Email (Single-user License)
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파워 SiC(MOSFET - SBD - 모듈) : 특허 상황 분석 Power SiC: MOSFETs - SBDs - Modules, Patent Landscape Analysis
발행일 : 2019년 01월 페이지 정보 : 영문 PDF >130 slides, Excel file with >3,800 patents

SiC 시장 규모는 2017년 3억 200만 달러에서 2023년에는 15억 달러 이상으로 31%의 연평균 성장률(CAGR)로 확대될 것으로 예측됩니다.

SiC 기반 파워 일렉트로닉스(MOSFET - SBD(Schottky Barrier Diodes) - 파워 모듈)와 관련된 특허 상황에 대해 조사했으며, 특허 상황 개요, 주요 특허 출원인, 가장 활발한 기업, 부문별 분석 및 신규 진출 기업 등에 대해 분석했습니다.


조사 방법

주요 요약


특허 상황 개요

  • 특허 공보의 경시적 변화
  • 주요 특허 출원인
  • 주요 특허 출원인 : 본거지(국가)별
  • 주요 IP 기업 : 특허 수와 현재 법적 상황
  • 주요 특허 출원인의 경시적 변화
  • 현재 가장 활발한 기업
  • CREE/Wolfspeed에 대한 주목
  • 특허 출원의 지역적 범위 및 그에 대응하는 특허의 현재 법적 상황
  • 주요 특허 양수인 vs. 특허 부여/미결 국가
  • 최근 만료된 특허
  • 가까운 시일내에 만료되는 특허
  • 결론

특허 세분화

  • Gateoxide

SiC SBD(Schottky Barrier Diodes)

  • 특허 출원인의 경시적 변화
  • 특허 양수인의 IP 리더십
  • 주요 특허 패밀리
  • 역사적인 특허 출원인과 최근의 특허
  • 신규 진출 기업과 특허
  • 결론

SiC 파워 모듈

  • 특허 공보의 경시적 변화
  • 주요 특허 출원인의 경시적 변화
  • 특허 양수인의 IP 리더십
  • 풀 SiC 파워 모듈
  • 하이브리드 SiC 파워 모듈
  • IP 리더 기업의 포트폴리오 리뷰
  • 신규 진출 기업에 대한 주목
  • 결론


Knowmade의 프리젠테이션

KSM 19.02.01

Power SiC intellectual property: leadership of Japanese players, strong presence of automotive companies, and Chinese new entrants

The 2016-2018 period has been crucial for the whole SiC industry. SiC MOSFETs, commercially available for several years, are gaining the confidence of numerous customers and have clearly begun to penetrate into different applications. They follow the first commercially available SiC diodes that appeared on the market over 18 years ago and gradually changed the market. According to Yole Développement's report ‘Power SiC 2018’, the SiC device market is expected to grow steadily, from $302M in 2017 to more than $1.5B in 2023, at a Compound Annual Growth Rate (CAGR) of 31%. In this report, Knowmade has thoroughly investigated the patent landscape related to SiC-based power electronics, covering MOSFETs, Schottky Barrier Diodes (SBDs) and power modules. Today, there is a dichotomy in power SiC patents, with new activity from Chinese players on one side and leadership of Japanese players and the strong presence of automotive companies on the other.

Japanese integrators are leading SiC MOSFET-related patenting activity

We witnessed a remarkable acceleration in patent filing related to SiC MOSFETs between 2011 and 2015, concomitant with the commercialization of the first SiC MOSFET products. Japanese integrators - especially Denso and Fuji Electric - have taken the lead in SiC MOSFET related patenting activity. China has entered the SiC MOSFET patent landscape in recent years, starting with R&D players in 2011, who were followed by major state-owned integrator companies in 2015 such as State Grid Corporation of Chine (SGCC), CRRC and SiC pure player foundry Century Goldray, which was established in 2010 to address the whole power SiC supply chain. A common feature of these new entrants is that they intend to develop IP on both planar and trench MOSFET structures. Taiwan has a long standing R&D player in SiC MOSFETs with ITRI, but there was no industrial player until 2016, when Hestia Power emerged, focused on cost effective planar junction barrier Schottky (JBS) diode-integrated MOSFET structures. We note that current leading SiC device makers like Cree/Wolfspeed, Rohm, Infineon and STMicroelectonics own some key patents but do not necessarily have strong IP leadership.

Planar SiC MOSFETs vs. Trench SiC MOSFETs

CREE/Wolfspeed has taken the lead in the planar SiC MOSFET IP race, well ahead of its main competitors Mitsubishi Electric and Fuji Electric. The analysis of Cree's patent portfolio shows it can effectively limit patenting activity in the field and control the freedom-to-operate in most countries including Japan. In fact, patenting activity from competitors is not ramping up and does not threaten CREE's IP leadership. The strong leadership of CREE/Wolfspeed as well as the growing maturity of planar SiC MOSFET technology could explain a slowdown in patenting activity since 2015.

Denso leads the IP race in trench SiC MOSFETs, well ahead of Fuji Electric. However, the latter could seriously challenge in coming years, provided that a significant number of its pending patent applications are granted. The situation differs from planar SiC MOSFETs, with various patent applicants such as Toyota Motor, Toyota Central R&D Laboratories (CRDL), Sumitomo Electric and Rohm still active. There seems to be more room for challengers in the trench SiC MOSFET IP competition, although Denso is actively strengthening its leadership through the collaboration with Toyota Motor and Toyota CRDL in the context of the acceleration of SiC power technologies' development for electric and hybrid electric vehicle (EV/HEV) applications. CREE/Wolfspeed's IP portfolio is relatively small in trench SiC MOSFETs with respect to planar SiC MOSFETs, but the company owns several key patents as it started to patent important inventions before most competitors. A significant fraction of patents related to trench SiC MOSFETs concern the protection of the gate oxide material from electric field concentration in certain portions of the gate. In this report we go through recent developments from major IP players to address reliability issues due to gate oxides.

SiC SBDs: revealing the recent patenting activity from key players and new entrants

CREE/Wolfspeed and Mitsubishi Electric share the IP leadership in SiC SBDs, and with Fuji Electric and Sumitomo Electric they are currently the most active patent applicants. In this report we detail the recent patents from key IP players and new entrants. Most patent applicants address reliability issues related to the edge termination regions, including Mitsubishi Electric, Fuji Electric, Toshiba and Panasonic. Additionally, both CREE/Wolfspeed and Mitsubishi Electric are developing Schottky devices with a superjunction structure. Some new inventions deal with increasing current capability of JBS diodes, including from Panasonic, Denso, Fuji Electric, and Infineon, and improving the stability when the device temperature rises, in patents from Panasonic and Fuji Electric. New entrants are exclusively Chinese players, including Century Goldray and SGCC. Their patents mainly relate to JBS diodes and are only filed in China for the moment.

Full SiC power modules

The share of full SiC module-related patents has been growing since 2012. Mitsubishi Electric is leading the SiC power module IP race with key patents mostly focused on hybrid Si/SiC modules. In this report we detail the patent portfolio of the main IP leaders like Mitsubishi Electric, Hitachi, Rohm and CREE/Wolfspeed and the new entrant Danfoss Silicon Power. Rohm's recent patenting activity puts the emphasis on the use of full SiC modules in electric vehicles, stressing solutions to efficient heat dissipation, the reliability of power module assemblies operating at high temperature and the reduction of stray inductance. Danfoss filed four patents related to full SiC MOSFET modules in 2018, focusing on enhancement of performance through optimized layout of interconnects inside the module.


Denso, Cree, Wolfspeed, Fuji Electric, Toyota Motor, Mitsubishi Electric, Sumitomo Electric, Rohm, General Electric, Hitachi, Toyota Central R&D Labs, Xidian University, Panasonic, Hyundai Motor, CRRC Times Electric, Century Goldray Semiconductor, Infineon, State Grid Corporation of China (SGCC), Hestia Power, Nissan Motor, Siemens, NXP, Toshiba, Philips, Microsemi, Littelfuse, IXYS, Monolith Semiconductor, Renesas Electronics, Bosch, ABB, Shindengen Electric Manufacturing, Showa Denko, Kansai Electric Power, On Semiconductor, Beijing Yandong Microelectronic, Tyco Tianrun Semiconductor Technology, Shenzhen Basic Semiconductor, Sharp, Guangdong Midea, Siemens, Danfoss Silicon Power, Wancheng Electric Vehicle Operation, Yangzhou Guoyang Electronic, Tyco Tianrun Semiconductor Technology, Schneider Electric, Dynex Semiconductor, Honda Motor, etc.



  • Market trends
  • Scope of the report
  • Objectives of the report
  • Key feature of the report
  • Main assignees cited in the report


  • Patent search, selection and analysis
  • Terminology for patent analysis



Patent landscape overview

  • Time evolution of patent publications
  • Leading patent applicants
  • Main patent applicants by country of head office
  • Main IP players: Number of patents and current legal status
  • Time evolution of main patent applicants
  • Most current active players
  • Focus on CREE/Wolfspeed
  • New entrants
  • Focus on Hestia Power
  • Geographic coverage of patent filings and
  • corresponding current legal status of patents
  • Main patent assignees vs. Countries of granted/pending patents
  • Patents recently expired
  • Patents near expiration date
  • Conclusion

Patent segmentation

  • For each planar MOSFET, trench MOSFET and gate oxide:
    • Time evolution of patent publications
    • Main patent assignees
    • IP trends for main patent applicants
  • Planar SiCMOSFET70
    • IP leadership of patent assignees
    • IP blocking potential of patent assignees
    • Strength of patent portfolios
    • Key patent families
  • Trench SiCMOSFET75
    • IP leadership of patent assignees
    • IP blocking potential of patent assignees
    • Strength of patent portfolios
    • Key patent families
  • Gateoxide80
  • Recent developments from major IP players to address reliability issues due to gate oxide in SiC trench MOSFET.


  • Time evolution of patent applicants
  • IP leadership of patent assignees
  • Key patent families
  • Historical patent applicants and their recent patents
  • New entrants and their patents
  • Conclusion


  • Time evolution of patent publications
  • Time evolution of main patent applicants
  • IP leadership of patent assignees
  • Full SiC power modules
  • Hybrid SiC power modules
  • Key patent families
  • Review of portfolio for IP leaders
  • Focus on new entrants
  • Conclusion



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