DRAM 제조용 CMP 슬러리 및 패드 : 시장 점유율 분석, 업계 동향 및 통계, 성장 예측(2026-2031년)

According to Mordor Intelligence, the CMP slurry and pads market for DRAM manufacturing size is projected to be USD 0.94 billion in 2025, USD 1.11 billion in 2026, and reach USD 2.06 billion by 2031, growing at a CAGR of 13.16% from 2026 to 2031.

This report is Segmented by Product Category (CMP Slurries, and CMP Pads), Abrasive Type (Ceria-Based Slurries, Colloidal Silica Slurries, Fumed Silica Slurries, Nano-Engineered Slurries, and More), Process Step (Tungsten/Contact CMP, Metal/Interconnect CMP, Capacitor Stack/DRAM Cell Structure CMP, and More), and Geography. Market Forecasts are Provided in Terms of Value (USD).

Insights and Trends of CMP Slurry and Pads Market For DRAM Manufacturing

Rising CMP Step Count in Advanced DRAM Nodes

The strongest structural support for the CMP slurry and pads market for DRAM manufacturing comes from the steady increase in polishing steps required as DRAM makers move deeper into sub-10nm integration. Advanced cell structures now incorporate more complex oxide, nitride, metal, and capacitor interfaces, increasing the number of surfaces that must be planarized within narrow tolerance windows during front-end processing. The same research shows that selectivity requirements for oxide-to-nitride stacks in advanced memory structures can exceed 500:1, which pushes fabs toward engineered ceria, composite abrasives, and tighter additive control rather than standard formulations. That change matters because every additional step multiplies slurry use per wafer, even before any new fab starts production, so the CMP slurry and pads market for DRAM manufacturing grows with process complexity and wafer volume. The material transition from tungsten to molybdenum in leading wordline structures also expands the chemistry requirements, because removal behavior, oxidation control, and defect sensitivity differ from those in older tungsten-heavy flows described in the original draft. As a result, suppliers that can meet advanced-node removal, selectivity, and defect targets are positioned to capture more value per qualified step, not only more volume across a larger installed base.

Faster HBM and DRAM Capacity Additions

Faster capacity additions in HBM and advanced DRAM are driving near-term demand for CMP slurry and pads in the DRAM manufacturing market, as new lines require qualified consumables from the first production lots onward. Industry conference material on HBM shows that stacked memory is gaining a larger share of total DRAM revenue, supporting higher polishing intensity per wafer as through-silicon via and stacking flows expand across the product mix. HBM manufacturing uses extra CMP passes for TSV copper fill, wafer thinning, and stack preparation, so a larger HBM mix lifts slurry demand even when total wafer starts do not rise at the same pace. Supplier behavior already reflects this shift, as Qnity launched the Emblem CMP pad platform for HBM and AI computing applications and paired that launch with a long-term supply agreement with SK hynix. Applied Materials and SK hynix also announced a long-term collaboration to develop next-generation DRAM and HBM manufacturing processes, with new materials and complex integration schemes named as core work areas. Taken together, these moves show that the CMP slurry and pads market for DRAM manufacturing is being shaped not only by more memory demand, but also by a richer process mix that requires more specialized consumables per finished device.

Long Qualification Cycles for Fab Approval

Long qualification cycles remain the clearest structural brake on the CMP slurry and pads market for DRAM manufacturing because new materials cannot move quickly from lab success into revenue at leading memory fabs. The peer-reviewed record shows that advanced CMP development must demonstrate control of removal rate, selectivity, defect performance, and post-polish cleanliness across demanding multi-material structures, which naturally extends approval timelines. In practice, suppliers often need to work jointly with the fab to tune pad conditioning, slurry chemistry, and cleaning conditions for a specific process stack and tool set, so qualification becomes a development exercise rather than a purchasing event. Even when a challenger offers better technical performance, the revenue window can narrow if the material reaches approval late in a node cycle or only after the customer has locked key steps to existing suppliers. The result is that the CMP slurry and pads market for DRAM manufacturing can show strong long-term demand while still remaining difficult for new suppliers to penetrate at the most valuable advanced-node positions.

Other drivers and restraints analyzed in the detailed report include:

1. Shift to 300 Mm Memory Wafer Production
2. Tight Defectivity Targets Inherited From EUV-Enabled Integration
3. Cost Pressure from Memory Cyclicality

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

CMP slurries captured 74.38% share of the CMP slurry and pads market for DRAM manufacturing in 2025, and the segment is also projected to expand at a 14.22% CAGR through 2031. That lead reflects the chemical specificity of DRAM polishing flows, in which oxide, tungsten, barrier, and cell-structure steps all depend on tailored removal behavior that cannot be achieved solely through mechanical polishing. The original draft also linked slurry demand to the rising number of process steps per wafer, which means advanced-node migration increases slurry consumption even before new fab output comes online. A January 2026 peer-reviewed paper supports this view by showing that advanced multi-material memory structures require extreme selectivity control, thereby increasing dependence on engineered chemistries rather than broad, low-cost formulations. FUJIFILM stated that it held a 46% global share in both copper bulk and copper barrier CMP slurry and set a goal to more than double total CMP slurry revenue by FY2030, with emphasis on DRAM and HBM packaging, underscoring how central this category is to supplier strategy.

CMP pads held the remaining portion of the CMP slurry and pads market for DRAM manufacturing, but their demand curve differs because replacement is tied more closely to pad life, groove health, and tool installation than to chemistry load per polishing step. The segment still benefits from DRAM and HBM complexity, especially where advanced packaging and hybrid bonding require tighter flatness and lower defectivity across copper-dielectric surfaces. Qnity launched its Emblem CMP pad platform specifically for HBM and AI computing applications and paired that product move with a long-term supply agreement with SK hynix, which shows how pad suppliers are targeting the highest-growth memory uses. South Korean suppliers are also expanding pad work into hybrid bonding, where the tolerance window is much tighter than in legacy memory flows and where pad design becomes more directly linked to yield protection. This keeps pads as a smaller but strategically important part of the CMP slurry and pads market for DRAM manufacturing, especially when customers need application-specific products rather than broadly interchangeable consumables.

Complete Report Scope:

• By Product Category
  • CMP Slurries
  • CMP Pads
• By Abrasive Type
  • Ceria-Based Slurries
  • Colloidal Silica Slurries
  • Fumed Silica Slurries
  • Nano-Engineered Slurries
  • Other Abrasive Types
• By Process Step
  • Dielectric/Oxide CMP
  • Tungsten/Contact CMP
  • Metal/Interconnect CMP
  • Capacitor Stack/DRAM Cell Structure CMP
  • Other Process Steps
• By Geography
  • North America
  • Europe
  • Asia-Pacific
    • China
    • Japan
    • South Korea
    • Taiwan
    • Rest of Asia-Pacific
  • Rest of the World

Geography Analysis

Asia-Pacific held 89.46% share in 2025, which made it the core regional base for the CMP slurry and pads market for DRAM manufacturing market share. That concentration mirrors the location of the main DRAM production ecosystem, where South Korea, Taiwan, and Japan anchor advanced memory capacity, supplier support, and process know-how across multiple generations of DRAM manufacturing. South Korea remains the largest consumer in the region because Samsung Electronics and SK hynix operate the most significant advanced-node production facilities and continue to drive process development toward HBM and leading-edge DRAM flows. Taiwan adds strategic weight through Micron's manufacturing expansion path, while Japan matters both as a semiconductor materials production base and as a long-standing location for slurry development and specialty manufacturing. The regional structure also gives Asia-Pacific an advantage in process support because many suppliers place plants, application teams, and technical service functions close to customer fabs to shorten qualification and troubleshooting cycles.

China is also becoming more relevant within the CMP slurry and pads market for DRAM manufacturing, even though the region still trails the leading memory hubs in qualified advanced-node supply. The clearest sign is the progress of domestic consumables companies that are first winning business at mature nodes and then using that operating record to pursue more demanding accounts. Hubei Dinglong reported 2025 CMP polishing pad revenue of CNY 1.09 billion (USD 153.5 million), with year-over-year growth of 52.34%, and the provincial department also noted small-batch supply to a mainstream foreign logic manufacturer in April 2025. That development matters because it shows Chinese suppliers are no longer limited to local replacement demand and are beginning to test acceptance beyond domestic fabs. Over time, this could make pricing and qualification dynamics in the broader CMP slurry and pads market for DRAM manufacturing more competitive, especially in mid-range process steps where technical barriers are lower than at the most advanced DRAM layers.

North America is projected to expand at a 14.87% CAGR through 2031, which makes it the fastest-growing region in the CMP slurry and pads market for DRAM manufacturing. Growth is tied to a stronger domestic semiconductor manufacturing push, new technology center investments, and greater emphasis on local materials support for advanced-node production. Entegris reported 2026 first-quarter sales growth tied to increasing unit-driven volumes from the most advanced manufacturing processes and is expanding its U.S. manufacturing and R&D footprint, including work tied to CMP slurries and pads. Europe remains smaller, but FUJIFILM's investment in Belgium for new CMP slurry facilities shows that regional semiconductor demand is sufficient to justify localized supply capability.

1. Fujifilm Corporation
2. Entegris, Inc.
3. DuPont de Nemours, Inc.
4. Resonac Holdings Corporation
5. Hubei Dinglong Co., Ltd.
6. AGC Inc.
7. 3M Company
8. Saint-Gobain
9. KC Tech Co., Ltd.
10. SK enpulse Co., Ltd.
11. KPX Chemical Co., Ltd.
12. IVT Technologies Co., Ltd.
13. TWI Incorporated
14. FNS TECH Co., Ltd.
15. Anjimirco Shanghai
16. Konfoong Materials International Co., Ltd.
17. Shanghai Xinanna Electronic Technology Co., Ltd.
18. CHUANYAN Technology Co., Ltd.

Additional Benefits:

• The market estimate (ME) sheet in Excel format
• 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

• 1.1 Study Assumptions and Market Definition
• 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

• 4.1 Market Overview
• 4.2 Market Drivers
  • 4.2.1 Rising CMP Step Count in Advanced DRAM Nodes
  • 4.2.2 Faster HBM and DRAM Capacity Additions
  • 4.2.3 Shift to 300 mm Memory Wafer Production
  • 4.2.4 Qualification Pull From Memory Fabrication Consolidation
  • 4.2.5 Tight Defectivity Targets Inherited From EUV-Enabled Integration
  • 4.2.6 Expanding Use of Chemistries Tuned for Low-Scratch Polishing
• 4.3 Market Restraints
  • 4.3.1 Long Qualification Cycles for Fab Approval
  • 4.3.2 Cost Pressure From Memory Cyclicality
  • 4.3.3 Formulation Sensitivity to Localized Supply Chain Interruptions
  • 4.3.4 Limited Differentiation Outside High-End Memory Nodes
• 4.4 Industry Value Chain Analysis
• 4.5 Regulatory Landscape
• 4.6 Technological Outlook
• 4.7 Impact of Macroeconomic Factors on the Market
• 4.8 Porter's Five Forces Analysis
  • 4.8.1 Threat of New Entrants
  • 4.8.2 Bargaining Power of Buyers
  • 4.8.3 Bargaining Power of Suppliers
  • 4.8.4 Threat of Substitutes
  • 4.8.5 Industry Rivalry

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)

• 5.1 By Product Category
  • 5.1.1 CMP Slurries
  • 5.1.2 CMP Pads
• 5.2 By Abrasive Type
  • 5.2.1 Ceria-Based Slurries
  • 5.2.2 Colloidal Silica Slurries
  • 5.2.3 Fumed Silica Slurries
  • 5.2.4 Nano-Engineered Slurries
  • 5.2.5 Other Abrasive Types
• 5.3 By Process Step
  • 5.3.1 Dielectric/Oxide CMP
  • 5.3.2 Tungsten/Contact CMP
  • 5.3.3 Metal/Interconnect CMP
  • 5.3.4 Capacitor Stack/DRAM Cell Structure CMP
  • 5.3.5 Other Process Steps
• 5.4 By Geography
  • 5.4.1 North America
  • 5.4.2 Europe
  • 5.4.3 Asia-Pacific
    • 5.4.3.1 China
    • 5.4.3.2 Japan
    • 5.4.3.3 South Korea
    • 5.4.3.4 Taiwan
    • 5.4.3.5 Rest of Asia-Pacific
  • 5.4.4 Rest of the World

6 COMPETITIVE LANDSCAPE

• 6.1 Market Concentration
• 6.2 Strategic Moves
• 6.3 Market Share Analysis
• 6.4 Company Profiles (includes Global Level Overview, Market Level Overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share, Products and Services, Recent Developments)
  • 6.4.1 Fujifilm Corporation
  • 6.4.2 Entegris, Inc.
  • 6.4.3 DuPont de Nemours, Inc.
  • 6.4.4 Resonac Holdings Corporation
  • 6.4.5 Hubei Dinglong Co., Ltd.
  • 6.4.6 AGC Inc.
  • 6.4.7 3M Company
  • 6.4.8 Saint-Gobain
  • 6.4.9 KC Tech Co., Ltd.
  • 6.4.10 SK enpulse Co., Ltd.
  • 6.4.11 KPX Chemical Co., Ltd.
  • 6.4.12 IVT Technologies Co., Ltd.
  • 6.4.13 TWI Incorporated
  • 6.4.14 FNS TECH Co., Ltd.
  • 6.4.15 Anjimirco Shanghai
  • 6.4.16 Konfoong Materials International Co., Ltd.
  • 6.4.17 Shanghai Xinanna Electronic Technology Co., Ltd.
  • 6.4.18 CHUANYAN Technology Co., Ltd.

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

• 7.1 White-Space and Unmet-Need Assessment