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¼¼°èÀÇ ÅͳΠÀü°è È¿°ú Æ®·£Áö½ºÅÍ ½ÃÀå ¿¹Ãø(-2030³â) : Á¦Ç° À¯Çü, ¿ëµµ, ÃÖÁ¾»ç¿ëÀÚ ¹× Áö¿ªº° ºÐ¼®Tunnel Field Effect Transistor Market Forecasts to 2030 - Global Analysis By Product Type (Lateral Tunneling and Vertical Tunneling), Application (Analog Switches, Amplifiers, Current Limiter and Other Applications), End User and By Geography |
Stratistics MRC¿¡ µû¸£¸é ÅͳΠÀü°è È¿°ú Æ®·£Áö½ºÅÍ ¼¼°è ½ÃÀåÀº 2023³â 11¾ï 2,163¸¸ ´Þ·¯·Î 2030³â 26¾ï 7,162¸¸ ´Þ·¯¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹»óµÇ¸ç ¿¹Ãø ±â°£ µ¿¾È 13.2%ÀÇ CAGRÀ» ±â·ÏÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
ÅͳΠÀü°è È¿°ú Æ®·£Áö½ºÅÍ(TFET) ½ÃÀåÀº Ư¼öÇÑ À¯ÇüÀÇ ¹ÝµµÃ¼ ¼ÒÀÚÀÎ TFET¸¦ Á¦Á¶ ¹× ÆÇ¸ÅÇÏ´Â »ê¾÷À¸·Î, TFET´Â ÃÊÀúÀü¾ÐÀ¸·Î ÀÛµ¿Çϰí Àü·Â ¼Òºñ¸¦ ÁÙÀÏ ¼ö Àֱ⠶§¹®¿¡ ÁÖ·Î ¸ð¹ÙÀÏ ±â±â ¹× IoT ±â±â¿Í °°Àº ÀúÀü·Â ÀüÀÚ ¾ÖÇø®ÄÉÀ̼ǿ¡ »ç¿ëµË´Ï´Ù. »ç¿ëµË´Ï´Ù. ¶ÇÇÑ, ƯÁ¤ ÀÇ·á±â±â ¹× ¿¡³ÊÁö È¿À²ÀÌ ³ôÀº ÁýÀûȸ·Î¿¡µµ Àû¿ëµÇ¾î ÀüÀÚ±â±âÀÇ ¿¡³ÊÁö È¿À²À» ³ôÀÌ°í ¹èÅ͸® ¼ö¸íÀ» ¿¬ÀåÇÏ´Â µ¥ ±â¿©Çϰí ÀÖ½À´Ï´Ù.
¹Ì±¹ Á¶»ç¿¡ µû¸£¸é, Àα¸ÀÇ 75% ÀÌ»ó, ¾à 2¾ï 6,500¸¸ ¸íÀÌ ½º¸¶Æ®ÆùÀ» ¼ÒÀ¯Çϰí ÀÖ½À´Ï´Ù.
ÈÞ´ë¿ë ±â±â ¹× IoT ±â±â¿¡ ´ëÇÑ ¼ÒºñÀÚ ¼ö¿ä°¡ ±ÞÁõÇÏ¸é¼ ¿¡³ÊÁö È¿À²ÀÌ ³ôÀº ºÎǰ¿¡ ´ëÇÑ ¿ä±¸°¡ Áõ°¡Çϰí ÀÖ½À´Ï´Ù. ÃÊÀúÀü·ÂÀ¸·Î ÀÛµ¿ÇÒ ¼ö ÀÖ´Â TFET´Â ÀÌ·¯ÇÑ ¼ö¿ä¸¦ ÃæÁ·ÇÏ´Â µ¥ ¸Å¿ì Áß¿äÇÑ ¿ªÇÒÀ» Çϸç, ½º¸¶Æ®Æù, ¿þ¾î·¯ºí ±â±â ¹× IoT ¼¾¼¿¡¼ ¹èÅ͸® ¼ö¸íÀ» ¿¬ÀåÇϰí Àü·Â ¼Òºñ¸¦ ÁÙ¿© Àü¹ÝÀûÀÎ »ç¿ëÀÚ °æÇèÀ» Çâ»ó½Ãų ¼ö ÀÖ½À´Ï´Ù. ¶ÇÇÑ, TFET´Â ¿¡³ÊÁö È¿À²ÀûÀÎ µ¥ÀÌÅͼ¾ÅÍ¿Í °í¼º´É ÄÄÇ»ÆÃ °³¹ßÀ» Áö¿øÇÏ¿© µðÁöÅÐ Çõ½Å, Áö¼Ó°¡´É¼º, »ç¹°ÀÎÅÍ³Ý ½Ã´ë¿¡ ÇʼöÀûÀÎ ¿ä¼Ò·Î ÀÚ¸® ÀâÀ¸¸ç ½ÃÀå ¼ºÀå¿¡ ´õ¿í ¹ÚÂ÷¸¦ °¡Çϰí ÀÖ½À´Ï´Ù.
TFET ±â¼úÀº ¾ÆÁ÷ °³¹ß ¹× »ó¿ëÈ Ãʱ⠴ܰ迡 ÀÖÀ¸¸ç, CMOS¿Í °°Àº ±âÁ¸ Æ®·£Áö½ºÅÍ ±â¼ú¿¡ ºñÇØ TFET ±â¹Ý ºÎǰ ¹× µð¹ÙÀ̽º°¡ ºÎÁ·ÇÕ´Ï´Ù. »ê¾÷°è¿Í ¼ÒºñÀÚµéÀº ½±°Ô ±¸ÇÒ ¼ö ÀÖ°í °ËÁõµÈ ±â¼ú¿¡ ÀÇÁ¸ÇÏ´Â °æ¿ì°¡ ¸¹±â ¶§¹®¿¡ ÀÌ·¯ÇÑ Á¦ÇÑÀûÀÎ °¡¿ë¼ºÀº º¸±Þ¿¡ °É¸²µ¹ÀÌ µË´Ï´Ù. ¶ÇÇÑ, TFET¸¦ Á¦Ç°¿¡ ÅëÇÕÇÏ·Á´Â ±â¾÷µéÀº TFET ±â¹Ý ºÎǰ Á¶´Þ°ú °ü·ÃµÈ Áö¿¬°ú ºÒÈ®½Ç¼º¿¡ Á÷¸éÇÒ ¼ö ÀÖÀ¸¸ç, ÀÌ´Â ±â¼ú Çõ½Å°ú TFET ½ÃÀå ¼ºÀåÀ» µÐȽÃų ¼ö Àֱ⠶§¹®¿¡ µµÀü °úÁ¦ÀÔ´Ï´Ù.
¼¼°è °¢±¹ Á¤ºÎ´Â ȯ°æ ¹®Á¦¸¦ ÇØ°áÇϰí Àü·Â ¼Òºñ¸¦ ÁÙÀ̱â À§ÇØ ¿¡³ÊÁö È¿À²ÀÌ ³ôÀº ±â¼úÀÇ ¿¬±¸°³¹ßÀ» Àû±ØÀûÀ¸·Î ÃßÁøÇϰí ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ Áö¿ø¿¡´Â TFET ¿¬±¸¿¡ ´ëÇÑ ÀÚ±Ý Áö¿ø, ģȯ°æ ±â¼ú¿¡ ÅõÀÚÇÏ´Â ±â¾÷¿¡ ´ëÇÑ ¼¼Á¦ ÇýÅÃ, ¿¡³ÊÁö È¿À²ÀÌ ³ôÀº ºÎǰÀ» ¿ì´ëÇÏ´Â ±ÔÁ¦ ±âÁØ Á¦Á¤ µîÀÌ Æ÷ÇԵ˴ϴÙ. ÀÌ·¯ÇÑ Á¤Ã¥Àº °¡ÀüÁ¦Ç°¿¡¼ ÀÎÇÁ¶ó¿¡ À̸£±â±îÁö ´Ù¾çÇÑ ºÐ¾ß¿¡¼ TFETÀÇ Çõ½Å°ú äÅÃÀ» ÃËÁøÇÒ °ÍÀÔ´Ï´Ù. ÀÌ´Â ½ÃÀå ¼ºÀåÀÇ ¿øµ¿·ÂÀÌ µÉ »Ó¸¸ ¾Æ´Ï¶ó ¿¡³ÊÁö ¼Òºñ¸¦ ÁÙÀÌ°í ±âÈĺ¯È¿¡ ´ëÀÀÇϱâ À§ÇÑ Àü ¼¼°èÀûÀÎ ³ë·Â°ú ¸Â¹°·Á TFET ½ÃÀåÀÇ ÀáÀç·ÂÀ» ³ô¿©ÁÖ°í ÀÖ½À´Ï´Ù.
¹ÝµµÃ¼ »ê¾÷ÀÌ ²÷ÀÓ¾øÀÌ ÁøÈÇÏ´Â °¡¿îµ¥ »õ·Î¿î ±â¼úÀÌ ¼º´É, È¿À²¼º ¹× È®À强À» ´É°¡ÇÏ´Â °æ¿ì TFET°¡ ±¸½ÄÀÌ µÉ À§ÇèÀÌ ÀÖÀ¸¸ç, TFET´Â ¾ÆÁ÷ »õ·Î¿î ±â¼úÀ̱⠶§¹®¿¡ »ó¾÷Àû »ýÁ¸ °¡´É¼ºÀº CMOS¿Í °°Àº ±âÁ¸ ±â¼ú¿¡ ´ëÇÑ °æÀï·ÂÀ» À¯ÁöÇÒ ¼ö ÀÖ´ÂÁö¿¡ ´Þ·Á ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ À§ÇùÀ» ¿ÏÈÇϱâ À§Çؼ´Â TFETÀÇ ¼º´ÉÀ» Çâ»ó½Ã۰í, ÇѰ踦 ±Øº¹Çϰí, ±â¼ú ¹ßÀüÀ» ¾Õ´ç±â±â À§ÇÑ Áö¼ÓÀûÀÎ ¿¬±¸ °³¹ßÀÌ ÇʼöÀûÀÔ´Ï´Ù. ¶ÇÇÑ, È¿°úÀûÀÎ ½ÃÀå ±³À° ¹× äÅà Àü·«Àº TFET°¡ ¹ÝµµÃ¼ ȯ°æ¿¡¼ ÀûÀýÇÏ°í °æÀï·Â ÀÖ´Â ¼±ÅÃÀÌ µÇ±â À§ÇØ ¸Å¿ì Áß¿äÇÕ´Ï´Ù.
COVID-19´Â ¿©·¯ °¡Áö Ãø¸é¿¡¼ ÅͳΠÀü°è È¿°ú Æ®·£Áö½ºÅÍ(TFET) ½ÃÀå¿¡ ¾Ç¿µÇâÀ» ¹ÌÃÆ½À´Ï´Ù. ¼¼°è °ø±Þ¸ÁÀÇ È¥¶õÀ¸·Î ÀÎÇØ ºÎǰÀÌ ºÎÁ·ÇÏ°í »ý»êÀÌ Áö¿¬µÇ¾î ºñ¿ëÀÌ »ó½ÂÇß½À´Ï´Ù. °¡µ¿ Áߴܰú ±ÔÁ¦´Â ¿¬±¸°³¹ßÀ» ¹æÇØÇÏ°í ±â¼ú ¹ßÀüÀ» Áö¿¬½ÃÄ×½À´Ï´Ù. ¶ÇÇÑ, °æÁ¦ÀÇ ºÒÅõ¸í¼ºÀ¸·Î ÀÎÇØ ¸¹Àº ±â¾÷µéÀÌ TFET¿Í °°Àº ½Å±â¼ú¿¡ ´ëÇÑ ÅõÀÚ¸¦ ¾ïÁ¦Çß½À´Ï´Ù. ÆÒµ¥¹ÍÀº ¿¡³ÊÁö È¿À²ÀÌ ³ôÀº µð¹ÙÀ̽ºÀÇ Á߿伺À» ºÎ°¢½ÃÄ×Áö¸¸, ´ç¸éÇÑ °æÁ¦ ¹× ¹°·ù ¹®Á¦´Â TFET ½ÃÀå ¼ºÀå¿¡ °É¸²µ¹·Î ÀÛ¿ëÇÏ¿© ¾÷°è °ü°èÀڵ鿡°Ô ȸº¹·Â°ú ÀûÀÀ·ÂÀ» ¿ä±¸Çß½À´Ï´Ù.
µðÁöÅРȸ·Î ºÐ¾ß´Â ¹ÝµµÃ¼ ±â¼úÀÇ Çõ½ÅÀ¸·Î ÀÎÇØ ¿¹Ãø ±â°£ µ¿¾È °¡Àå Å« ½ÃÀå Á¡À¯À²À» Â÷ÁöÇÒ °ÍÀ¸·Î ¿¹»óµÇ¸ç, TFET´Â ÃÊÀúÀü·Â ¼Òºñ¿Í °°Àº ÀÌÁ¡À» °¡Áö°í ÀÖ¾î ¿¡³ÊÁö È¿À²ÀûÀÎ µðÁöÅРȸ·Î¿¡ ÀûÇÕÇÕ´Ï´Ù. ÀÌ·¯ÇÑ È¸·Î´Â ¸ð¹ÙÀÏ ±â±â, »ç¹°ÀÎÅͳÝ(IoT) ¼¾¼, ¿þ¾î·¯ºí ÀüÀÚ±â±â µî ´Ù¾çÇÑ ºÐ¾ß¿¡ Àû¿ëµÇ°í ÀÖÀ¸¸ç, TFET ±â¹Ý µðÁöÅРȸ·Î´Â ¹èÅ͸® ¼ö¸íÀ» ¿¬ÀåÇÏ°í ¹ß¿À» ÁÙÀÌ¸ç ¼º´ÉÀ» Çâ»ó½ÃÄÑ ¿À´Ã³¯ÀÇ ÈÞ´ë¿ë ¹× IoT ±â¹Ý ÈÞ´ë¿ë ¹× IoT Áß½ÉÀÇ ¼¼°è¿¡¼ Àü·Â È¿À²ÀÌ ³ôÀº ÄÄÇ»ÆÃ¿¡ ´ëÇÑ ¼ö¿ä¸¦ ÃæÁ·½Ãŵ´Ï´Ù. ¶ÇÇÑ, ¿¡³ÊÁö È¿À²ÀûÀÎ ÄÄÇ»ÆÃ Ç÷§ÆûÀÇ °³¹ßÀ» °¡´ÉÇÏ°Ô ÇÏ´Â µ¥ Áß¿äÇÑ ¿ªÇÒÀ» Çϸç, Ä¿³ØÆ¼µå »çȸ¿¡¼ Áö¼Ó°¡´ÉÇÏ°í °í¼º´ÉÀÇ ÀüÀÚÁ¦Ç°¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡¸¦ µÞ¹ÞħÇϰí ÀÖ½À´Ï´Ù.
ÀÚµ¿Â÷ ºÐ¾ß´Â ºü¸£°Ô ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹»óµÇ¸ç, TFET ±â¼úÀÇ ÀúÀü·Â ¼Òºñ¿Í È¿À²ÀûÀÎ ½ºÀ§Äª Ư¼ºÀº ´Ù¾çÇÑ Â÷·®¿ë ¾ÖÇø®ÄÉÀ̼ǿ¡ ÀûÇÕÇϸç, TFET´Â Àü±âÀÚµ¿Â÷(EV)ÀÇ Àü¿ø °ü¸® ½Ã½ºÅÛ¿¡ »ç¿ëµÇ¾î ¿¡³ÊÁö È¿À²À» °³¼±ÇÏ°í ¹èÅ͸® ¼ö¸íÀ» ¿¬ÀåÇÕ´Ï´Ù. ¶ÇÇÑ, ADAS(÷´Ü¿îÀüÀÚº¸Á¶½Ã½ºÅÛ)¿Í ÀÚÀ²ÁÖÇà Ç÷§Æû¿¡µµ »ç¿ëµÇ¾î ¿¡³ÊÁö ¼Òºñ¸¦ ÃÖ¼ÒÈÇÏ¸é¼ ¿¬»ê ¼º´ÉÀ» Çâ»ó½Ãŵ´Ï´Ù. ¶ÇÇÑ, TFET´Â ¿¡³ÊÁö È¿À²ÀÌ ³ôÀº Â÷·®¿ë ÀüÀÚÁ¦Ç° °³¹ß¿¡ ±â¿©Çϰí, ÀÚµ¿Â÷ »ê¾÷ÀÌ Ä£È¯°æÀûÀÌ°í ½º¸¶Æ®ÇÑ ¿î¼Û ¼Ö·ç¼ÇÀ¸·Î ÀüȯÇÏ´Â °ÍÀ» Áö¿øÇϸç, ±Ã±ØÀûÀ¸·Î Â÷·®¿ë ÀüÀÚÁ¦Ç°ÀÇ ¹Ì·¡¸¦ Çü¼ºÇÒ ¼ö ÀÖ½À´Ï´Ù.
ÅͳΠÀü°è È¿°ú Æ®·£Áö½ºÅÍÀÇ °¡Àå Å« ½ÃÀåÀº ¿¹Ãø ±â°£ µ¿¾È ºÏ¹Ì Áö¿ªÀÌ µÉ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ÀÌ Áö¿ª¿¡´Â ´Ù¼öÀÇ ´ëÇü ¹ÝµµÃ¼ ±â¾÷, ¿¬±¸±â°ü ¹× TFET °³¹ß¿¡ Àû±ØÀûÀ¸·Î Âü¿©Çϰí Àִ ÷´Ü ±â¼ú ´ë±â¾÷ÀÌ À§Ä¡Çϰí ÀÖÀ¸¸ç, TFET´Â ¿¡³ÊÁö È¿À²ÀûÀÎ ÀüÀÚÁ¦Ç°À» Ãß±¸ÇÏ´Â ºÏ¹Ì Áö¿ª, ƯÈ÷ Àü·Â ¼Òºñ°¡ Áß¿äÇÑ °ü½É»çÀÎ µ¥ÀÌÅͼ¾ÅÍ¿¡¼ ¸Å¿ì Áß¿äÇÑ ¿ªÇÒÀ» ÇÕ´Ï´Ù. ¾çÀÚ ÄÄÇ»ÆÃ ¹× Ç×°ø¿ìÁÖ ¾ÖÇø®ÄÉÀ̼ǰú °°Àº ½Å±â¼úÀÇ ¹ßÀü¿¡µµ ÇʼöÀûÀÔ´Ï´Ù. ¶ÇÇÑ, TFET´Â ȯ°æ Ä£ÈÀûÀÎ ¼ÒºñÀÚ ÀüÀÚÁ¦Ç°À» °³¹ßÇÒ ¼ö ÀÖ°ÔÇÔÀ¸·Î½á ÀÌ Áö¿ªÀÇ Áö¼Ó°¡´É¼º°ú Çõ½Å¿¡ ´ëÇÑ °ü½É°úµµ ºÎÇÕÇÕ´Ï´Ù. ºÏ¹Ì TFETÀÇ ±â¿©´Â ¼¼°è ¹ÝµµÃ¼ »ê¾÷À» Çü¼ºÇÏ°í ±â¼ú ¹ßÀüÀ» ÃËÁøÇÕ´Ï´Ù.
¿¹Ãø ±â°£ µ¿¾È ¾Æ½Ã¾ÆÅÂÆò¾çÀº ȣȲÀ» ´©¸®°í ÀÖ´Â ¹ÝµµÃ¼ »ê¾÷°ú źźÇÑ Á¦Á¶ ´É·ÂÀ¸·Î ÀÎÇØ ½ÃÀå¿¡¼ °¡Àå ³ôÀº ¼ºÀå·üÀ» º¸ÀÏ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. Áß±¹, Çѱ¹, ´ë¸¸°ú °°Àº ±¹°¡µéÀº ¼ÒºñÀÚ Á¦Ç°, »ê¾÷¿ë ¾ÖÇø®ÄÉÀÌ¼Ç ¹× 5G ¹× IoT¿Í °°Àº ½ÅÈï ±â¼úÀ» À§ÇÑ ¿¡³ÊÁö È¿À²ÀûÀÎ ÀüÀÚÁ¦Ç°ÀÇ Ãß±¸¿¡ ÇʼöÀûÀÎ TFETÀÇ ¿¬±¸°³¹ß¿¡ Àû±ØÀûÀ¸·Î Âü¿©Çϰí ÀÖ´Â ÁÖ¿ä ¹ÝµµÃ¼ Á¦Á¶¾÷ü¸¦ º¸À¯Çϰí ÀÖ½À´Ï´Ù. TFET »ý»ê ¹× äÅÿ¡¼ ¾Æ½Ã¾ÆÅÂÆò¾çÀÇ ¿ìÀ§´Â ¼¼°è ¹ÝµµÃ¼ »óȲÀ» Çü¼ºÇÏ°í ¿¡³ÊÁö È¿À²ÀûÀÎ ÀüÀÚÁ¦Ç°À» ¹ßÀü½ÃŰ´Â µ¥ ÀÖ¾î ¾Æ½Ã¾ÆÅÂÆò¾çÀÇ ¿µÇâ·ÂÀ» °Á¶Çϰí ÀÖ½À´Ï´Ù.
According to Stratistics MRC, the Global Tunnel Field Effect Transistor Market is accounted for $1121.63 million in 2023 and is expected to reach $2671.62 million by 2030 growing at a CAGR of 13.2% during the forecast period. The Tunnel Field Effect Transistor (TFET) Market is the industry involved in the manufacturing and distribution of TFETs, a specialized type of semiconductor device. TFETs are primarily used in low-power electronic applications, such as mobile devices and IoT devices, due to their ability to operate at ultra-low voltage levels, reducing power consumption. They are also employed in certain medical devices and energy-efficient integrated circuits, contributing to improved energy efficiency and longer battery life in electronic gadgets.
According to the United States Survey, there were more than 75% of the population owns a smartphone-approximately 265 million.
As consumer demand for portable and IoT devices continues to surge, there's a growing need for energy-efficient components. TFETs, with their ability to operate at ultra-low power levels, are crucial in meeting this demand. They enable longer battery life and reduced power consumption in smartphones, wearables, and IoT sensors, enhancing the overall user experience. Additionally, TFETs also support the development of energy-efficient data centers and high-performance computing, making them indispensable in the era of digital transformation, sustainability, and the Internet of Things which further propels the market growth.
TFET technology is still in the early stages of development and commercialization, resulting in a scarcity of TFET-based components and devices compared to established transistor technologies like CMOS. This limited availability can hinder its widespread adoption, as industries and consumers often rely on readily accessible and proven technologies. It also presents challenges for businesses looking to incorporate TFETs into their products, as they may face delays and uncertainties related to sourcing TFET-based components, potentially slowing down innovation and the growth of the TFET market.
Many governments worldwide are actively promoting research and development in energy-efficient technologies to address environmental concerns and reduce power consumption. This support can include funding for TFET research, tax incentives for companies investing in green technologies, and the establishment of regulatory standards favouring energy-efficient components. Such policies encourage innovation and adoption of TFETs in various applications, from consumer electronics to infrastructure. This not only drives market growth but also aligns with global efforts to mitigate energy consumption and combat climate change, enhancing TFET market prospects.
As the semiconductor industry continuously evolves, there is a risk that TFETs may become outdated if newer technologies surpass their performance, efficiency, or scalability. TFETs are still emerging, and their commercial viability hinges on maintaining a competitive edge against established technologies like CMOS. To mitigate this threat, ongoing research and development efforts are essential to enhance TFET performance, address limitations, and stay ahead of technological advancements. Additionally, effective market education and adoption strategies are crucial to ensuring TFETs remain a relevant and competitive choice in the semiconductor landscape.
The COVID-19 pandemic negatively impacted the Tunnel Field Effect Transistor (TFET) market in several ways. Disruptions in global supply chains led to component shortages, delaying production and increasing costs. Lockdowns and restrictions hindered research and development efforts, slowing down technological advancements. Additionally, the economic uncertainty caused many companies to cut back on investments in emerging technologies like TFETs. While the pandemic underscored the importance of energy-efficient devices, its immediate economic and logistical challenges posed obstacles to TFET market growth, requiring resilience and adaptability from industry players.
Digital circuits segment is anticipated to hold the largest market share during the forecast period due to its significant innovation in semiconductor technology. TFETs offer advantages like ultra-low power consumption, making them ideal for energy-efficient digital circuitry. These circuits find applications in various fields, including mobile devices, Internet of Things (IoT) sensors, and wearable electronics. TFET-based digital circuits enable extended battery life, reduced heat generation, and enhanced performance, meeting the demand for power-efficient computing in today's portable and IoT-driven world. They also play a vital role in enabling the development of energy-efficient computing platforms, supporting the growing need for sustainable and high-performance electronics in an increasingly connected society.
The automotive segment is expected to experience rapid growth. TFET technology's low power consumption and efficient switching characteristics make it well-suited for various automotive applications. TFETs are utilized in electric vehicle (EV) power management systems, improving energy efficiency and extending battery life. They also find use in advanced driver assistance systems (ADAS) and autonomous driving platforms, enhancing computational performance while minimizing energy consumption. Additionally, TFETs contribute to the development of energy-efficient onboard electronics, supporting the automotive industry's transition towards eco-friendly and smart transportation solutions, ultimately shaping the future of automotive electronics.
The largest region for Tunnel Field Effect Transistor is anticipated to be North America during the forecast period. The region is a hub to numerous leading semiconductor companies, research institutions, and tech giants actively involved in TFET development. TFETs are pivotal in North America's pursuit of energy-efficient electronics, particularly in data centers, where power consumption is a critical concern. They are also integral to advancements in emerging technologies such as quantum computing and aerospace applications. Moreover, TFETs enable the development of eco-friendly consumer electronics, aligning with the region's focus on sustainability and innovation. North America's TFET contributions shape the global semiconductor industry and foster technological advancements.
During the period of the forecast, Asia-Pacific is anticipated to have among the market's highest growth rates with its booming semiconductor industry and robust manufacturing capabilities. Countries like China, South Korea, and Taiwan host major semiconductor manufacturers that are actively involved in TFET research and development. TFETs are integral to the region's pursuit of energy-efficient electronics for consumer products, industrial applications, and emerging technologies like 5G and IoT. Asia-Pacific's dominance in TFET production and adoption underscores its influence in shaping the global semiconductor landscape and advancing energy-efficient electronics.
Some of the key players profiled in the Tunnel Field Effect Transistor Market include: Advanced Linear Devices, Inc., Analog Devices, Inc., Axcera, Inc., Broadcom, Inc., EnSilica, Fairchild Semiconductor International Inc., Focus Microwaves, Inc., Infineon Technologies, Intel Corporation, MACOM Technology Solutions, Maxim Integrated, Mediatek Inc., Microchip Technology Inc., Murata Manufacturing Co., Ltd., NXP Semiconductors, ON Semiconductor Corporation, Qorvo, Inc., QUALCOMM Incorporated, Samsung Electronics, Skyworks Solutions, STMicroelectronics N.V., Taiwan Semiconductor Manufacturing Company, Taiyo Yuden Co., Ltd., Texas Instruments, Inc., Torex Semiconductor and Toshiba Corporation.
In March 2023, Schneider Electric, Capgemini and Qualcomm Tecnologies, Inc. announced their collaboration on a first-of-its-kind 5G-enabled automated hoisting solution. The three companies have joined efforts on design and installation of the solution at Schneider Electric's hoisting lab in Grenoble, France.
In February 2023, Schneider Electric has completed its acquisition with AVEVA. Industrial software giant AVEVA today announced the completion of its acquisition by Schneider Electric, a global industrial company specializing in digital automation and energy management.
In October 2022, Intel Foundry Services (IFS) launched a strategic addition to its design ecosystem Accelerator program. The new USMAG (United States Military, Aerospace and Government) Alliance brings together a trusted design ecosystem with U.S.-based manufacturing to enable assured chip design and production on advanced process technologies and meet the stringent design and production requirements of national security application.