세계의 WBG 재료 시장 전망(-2030년) : 재료 유형별, 공급망별, 장치 유형별, 용도별, 최종 사용자별, 지역별 분석

According to Stratistics MRC, the Global Wide Bandgap Materials Market is accounted for $320.23 million in 2024 and is expected to reach $748.47 million by 2030 growing at a CAGR of 15.2% during the forecast period. Wide Bandgap (WBG) semiconductors may function at greater voltages, frequencies, and temperatures because they have a wider bandgap than traditional semiconductor materials like silicon. Gallium nitride (GaN) and silicon carbide (SiC) are important examples. The market for WBG materials is driven by factors such as 5G telecommunications, renewable energy systems, and the increasing need for energy-efficient power electronics, particularly in EVs. Better thermal management, decreased energy loss, and increased performance are made possible by these materials in power applications.

According to Ericsson, the number of 5G subscriptions increased by 70 million during the first quarter of 2022, reaching about 620 million.

Market Dynamics:

Driver:

Increasing demand for energy-efficient power electronics

A key factor propelling the market for wide bandgap materials is the growing need for energy-efficient power electronics. More effective power conversion and management solutions are becoming more and more necessary as industries work to cut carbon emissions and consume less energy. WBG materials, such as SiC and GaN, are perfect for power electronics applications because they perform better and are more efficient than conventional silicon-based semiconductors. Smaller, lighter, and more effective power systems can be developed thanks to these materials, which will save a lot of energy and have a less negative effect on the environment.

Restraint:

Limited availability of raw materials

In the Wide Bandgap (WBG) Materials market, a major obstacle is the scarcity of raw materials, especially for essential materials like silicon carbide (SiC) and gallium nitride (GaN). These materials are more difficult to extract and process, and they are less common than conventional silicon. The fabrication of efficient power electronics requires high-quality SiC and GaN, but these materials are scarce and difficult to manufacture, which raises production costs. The adoption of WBG materials in sectors including electric vehicles, 5G, and renewable energy may be slowed down by this supply limitation, which might result in manufacturing delays, increased costs, and supply chain vulnerabilities.

Opportunity:

Advancements in 5G and telecommunications

GaN is perfect for 5G base stations, radar systems, and RF power amplifiers due to its exceptional performance at high frequencies, high power densities, and great efficiency. WBG materials allow telecom equipment to manage higher data throughput, lower latency, and better network coverage as the need for quicker, more dependable communication networks increases. In order to meet the demanding requirements of next-generation telecommunications infrastructure and promote wider use in 5G and beyond, GaN must be able to function effectively at high temperatures and voltages.

Threat:

Complex manufacturing processes

WBG materials, like silicon carbide (SiC) and gallium nitride (GaN), are made using specific methods and highly accurate machinery. To achieve the best device performance, large-scale, high-quality WBG crystal growth and the development of sophisticated epitaxial growth techniques are crucial. The extensive use of WBG devices may be constrained by these intricate manufacturing procedures, which may also raise production costs. To fully realize the promise of WBG materials, however, continuous research and development efforts are concentrated on enhancing manufacturing processes and cutting expenses.

Covid-19 Impact

The COVID-19 epidemic caused supply chain disruptions and production delays in the wide bandgap materials sector. Research and development efforts were hampered and industrial operations were affected by lockdowns and limitations implemented in different regions. But the epidemic also hastened the development of cutting-edge technologies, such as WBG devices, to meet the growing need for high-performance and energy-efficient solutions. Demand for WBG materials steadily rose as economies recovered and industry adjusted to the new normal. This was due in part to the expansion of data centers, renewable energy systems, and electric vehicles.

The silicon carbide (SiC) segment is expected to be the largest during the forecast period

The silicon carbide (SiC) segment is estimated to be the largest, due to its ability to operate at higher voltages, temperatures, and frequencies compared to traditional silicon. Due to its high thermal conductivity and power efficiency, SiC is perfect for industrial power electronics, renewable energy systems, and electric vehicles (EVs). Its potential to lower energy losses and enhance performance in chargers, inverters, and power converters is also encouraging adoption across industries looking to operate more sustainably and efficiently.

The automotive segment is expected to have the highest CAGR during the forecast period

The automotive segment is anticipated to witness the highest CAGR during the forecast period, due to the rising demand for hybrid and electric automobiles. SiC's exceptional efficiency at high temperatures and voltages is essential for improving on-board chargers, battery management systems, and EV powertrains. It enhances range, lowers energy loss, and boosts electric cars' overall efficiency. WBG materials are crucial for satisfying the changing demands of the automobile sector as producers concentrate on sustainability and energy efficiency.

Region with largest share:

Asia Pacific is expected to have the largest market share during the forecast period due to increasing use of renewable energy sources, expanding demand for electric vehicles (EVs), and fast industrialization. Silicon carbide (SiC) and gallium nitride (GaN) are widely used in power electronics, electric vehicle infrastructure, and telecommunications in nations including China, Japan, and South Korea. Furthermore, government programs that support green technology and energy efficiency are speeding up the use of WBG materials, which is propelling the region's market expansion.

Region with highest CAGR:

North America is projected to witness the highest CAGR over the forecast period, owing to the rising need for high-performance power electronics, renewable energy sources, and electric vehicles (EVs). The market is expanding because to the increasing use of silicon carbide (SiC) and gallium nitride (GaN) in 5G telecommunications, solar inverters, and EV powertrains. Furthermore, the integration of WBG materials into a variety of industries, such as automotive, telecommunications, and industrial applications, is supported by North America's emphasis on sustainability, energy efficiency, and government incentives for green technologies.

Key players in the market

Some of the key players profiled in the Wide Bandgap Materials Market include Infineon Technologies AG, ON Semiconductor Corporation, STMicroelectronics N.V., Texas Instruments Incorporated, ROHM Semiconductor, NXP Semiconductors N.V., Qorvo, Inc., Schaefer, Inc., General Electric Company (GE), Analog Devices, Inc., Macom Technology Solutions, Applied Materials, Inc., Mitsubishi Electric Corporation, II-VI Incorporated, Toshiba Corporation, Broadcom Inc, Norstel AB, Sumitomo Electric Industries, Ltd., and Samsung Electronics Co., Ltd.

Key Developments:

In June 2023, Infineon launched its next-generation 1200V SiC MOSFETs designed to offer higher power efficiency and lower switching losses. These MOSFETs cater to a variety of applications, including electric vehicles (EVs) and renewable energy systems.

In May 2023, STMicroelectronics introduced a new series of Gallium Nitride (GaN) power transistors for high-efficiency power systems, addressing the growing demand for fast-charging infrastructure, 5G, and data centers.

In January 2023, Rohm introduced new 1200V SiC MOSFETs aimed at the electric vehicle (EV) market, delivering superior power density and thermal performance. These devices help enhance the efficiency of EV powertrains and charging stations.

Material Types Covered:

• Silicon Carbide (SiC)
• Gallium Nitride (GaN)
• Aluminum Nitride (AlN)
• Diamond
• Other Materials

Supply Chains Covered:

• Raw Materials
• Manufacturers and Suppliers
• End Users

Device Types Covered:

• Power Transistors
• Diodes
• Modules
• RF Devices
• Other Device Types

Applications Covered:

• Power Electronics
• Electric Vehicles (EVs)
• Renewable Energy Systems
• RF and Microwave Devices
• Consumer Electronics
• Other Applications

End Users Covered:

• Automotive
• Telecommunications
• Industrial & Power
• Consumer Electronics
• Aerospace & Defense
• Other End Users

Regions Covered:

• North America
  • US
  • Canada
  • Mexico
• Europe
  • Germany
  • UK
  • Italy
  • France
  • Spain
  • Rest of Europe
• Asia Pacific
  • Japan
  • China
  • India
  • Australia
  • New Zealand
  • South Korea
  • Rest of Asia Pacific
• South America
  • Argentina
  • Brazil
  • Chile
  • Rest of South America
• Middle East & Africa
  • Saudi Arabia
  • UAE
  • Qatar
  • South Africa
  • Rest of Middle East & Africa

What our report offers:

• Market share assessments for the regional and country-level segments
• Strategic recommendations for the new entrants
• Covers Market data for the years 2022, 2023, 2024, 2026, and 2030
• Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
• Strategic recommendations in key business segments based on the market estimations
• Competitive landscaping mapping the key common trends
• Company profiling with detailed strategies, financials, and recent developments
• Supply chain trends mapping the latest technological advancements

Free Customization Offerings:

All the customers of this report will be entitled to receive one of the following free customization options:

• Company Profiling
  • Comprehensive profiling of additional market players (up to 3)
  • SWOT Analysis of key players (up to 3)
• Regional Segmentation
  • Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
• Competitive Benchmarking
  • Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

Table of Contents

1 Executive Summary

2 Preface

• 2.1 Abstract
• 2.2 Stake Holders
• 2.3 Research Scope
• 2.4 Research Methodology
  • 2.4.1 Data Mining
  • 2.4.2 Data Analysis
  • 2.4.3 Data Validation
  • 2.4.4 Research Approach
• 2.5 Research Sources
  • 2.5.1 Primary Research Sources
  • 2.5.2 Secondary Research Sources
  • 2.5.3 Assumptions

3 Market Trend Analysis

• 3.1 Introduction
• 3.2 Drivers
• 3.3 Restraints
• 3.4 Opportunities
• 3.5 Threats
• 3.6 Application Analysis
• 3.7 End User Analysis
• 3.8 Emerging Markets
• 3.9 Impact of Covid-19

4 Porters Five Force Analysis

• 4.1 Bargaining power of suppliers
• 4.2 Bargaining power of buyers
• 4.3 Threat of substitutes
• 4.4 Threat of new entrants
• 4.5 Competitive rivalry

5 Global Wide Bandgap Materials Market, By Material Type

• 5.1 Introduction
• 5.2 Silicon Carbide (SiC)
• 5.3 Gallium Nitride (GaN)
• 5.4 Aluminum Nitride (AlN)
• 5.5 Diamond
• 5.6 Other Materials

6 Global Wide Bandgap Materials Market, By Supply Chain

• 6.1 Introduction
• 6.2 Raw Materials
• 6.3 Manufacturers and Suppliers
• 6.4 End Users

7 Global Wide Bandgap Materials Market, By Device Type

• 7.1 Introduction
• 7.2 Power Transistors
• 7.3 Diodes
• 7.4 Modules
• 7.5 RF Devices
• 7.6 Other Device Types

8 Global Wide Bandgap Materials Market, By Application

• 8.1 Introduction
• 8.2 Power Electronics
• 8.3 Electric Vehicles (EVs)
• 8.4 Renewable Energy Systems
• 8.5 RF and Microwave Devices
• 8.6 Consumer Electronics
• 8.7 Other Applications

9 Global Wide Bandgap Materials Market, By End User

• 9.1 Introduction
• 9.2 Automotive
• 9.3 Telecommunications
• 9.4 Industrial & Power
• 9.5 Consumer Electronics
• 9.6 Aerospace & Defense
• 9.7 Other End Users

10 Global Wide Bandgap Materials Market, By Geography

• 10.1 Introduction
• 10.2 North America
  • 10.2.1 US
  • 10.2.2 Canada
  • 10.2.3 Mexico
• 10.3 Europe
  • 10.3.1 Germany
  • 10.3.2 UK
  • 10.3.3 Italy
  • 10.3.4 France
  • 10.3.5 Spain
  • 10.3.6 Rest of Europe
• 10.4 Asia Pacific
  • 10.4.1 Japan
  • 10.4.2 China
  • 10.4.3 India
  • 10.4.4 Australia
  • 10.4.5 New Zealand
  • 10.4.6 South Korea
  • 10.4.7 Rest of Asia Pacific
• 10.5 South America
  • 10.5.1 Argentina
  • 10.5.2 Brazil
  • 10.5.3 Chile
  • 10.5.4 Rest of South America
• 10.6 Middle East & Africa
  • 10.6.1 Saudi Arabia
  • 10.6.2 UAE
  • 10.6.3 Qatar
  • 10.6.4 South Africa
  • 10.6.5 Rest of Middle East & Africa

11 Key Developments

• 11.1 Agreements, Partnerships, Collaborations and Joint Ventures
• 11.2 Acquisitions & Mergers
• 11.3 New Product Launch
• 11.4 Expansions
• 11.5 Other Key Strategies

12 Company Profiling

• 12.1 Infineon Technologies AG
• 12.2 ON Semiconductor Corporation
• 12.3 STMicroelectronics N.V.
• 12.4 Texas Instruments Incorporated
• 12.5 ROHM Semiconductor
• 12.6 NXP Semiconductors N.V.
• 12.7 Qorvo, Inc.
• 12.8 Schaefer, Inc.
• 12.9 General Electric Company (GE)
• 12.10 Analog Devices, Inc.
• 12.11 Macom Technology Solutions
• 12.12 Applied Materials, Inc.
• 12.13 Mitsubishi Electric Corporation
• 12.14 II-VI Incorporated
• 12.15 Toshiba Corporation
• 12.16 Broadcom Inc.
• 12.17 Norstel AB
• 12.18 Sumitomo Electric Industries, Ltd.
• 12.19 Samsung Electronics Co., Ltd.