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ÅºÈ±Ô¼Ò ¹ÌºÐ¸» ½ÃÀå ¿¹Ãø(-2030³â) : µî±Þº°, ¿ëµµº°, Áö¿ªº° ¼¼°è ºÐ¼®Silicon Carbide Fine Powder Market Forecasts to 2030 - Global Analysis By Grade (Metallurgical Grade, Refractory Grade, Abrasive Grade, Black Silicon Carbide and Green Silicon Carbide), Application and By Geography |
Stratistics MRC¿¡ µû¸£¸é ÅºÈ±Ô¼Ò ¹ÌºÐ¸» ¼¼°è ½ÃÀåÀº 2024³â 9¾ï 1,303¸¸ ´Þ·¯·Î ¿¹Ãø ±â°£ µ¿¾È CAGR 13.1%·Î ¼ºÀåÇÏ¿© 2030³â¿¡´Â 1Á¶ 9,109¾ï 9,900¸¸ ´Þ·¯¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
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According to Stratistics MRC, the Global Silicon Carbide Fine Powder Market is accounted for $913.03 million in 2024 and is expected to reach $1910.99 billion by 2030 growing at a CAGR of 13.1% during the forecast period. Silicon carbide (SiC) fine powder is a highly versatile material widely used in various industrial and technological applications due to its exceptional properties. A vital component of ceramics, advanced coatings, and abrasive materials, silicon carbide fine powder is well-known for its exceptional chemical stability, high heat conductivity, and superior hardness. Because of its small particle size, it can be used precisely in processes like polishing and lapping and as a reinforcement material in composites to increase their mechanical strength and resistance to heat.
According to the Journal of Applied Physics, silicon carbide is being explored for its potential use in quantum computing and other advanced technological applications due to its unique electronic properties, with research funding exceeding $100 million globally.
Growing interest in semiconductors and electronics
One of the main factors propelling the market's expansion is the growing use of silicon carbide (SiC) fine powder in the semiconductor and electronics industries. Because SiC can function in harsh environments with high temperatures, voltages, and frequencies, it is highly prized. Because of this, it is a necessary component of power electronic devices like insulated-gate bipolar transistors, Schottky diodes, and metal-oxide-semiconductor field-effect transistors. Furthermore, SiC fine powder facilitates device miniaturization while improving performance, robustness, and efficiency, all of which are essential for developing technologies like 5G infrastructure and Internet of Things applications.
Expensive production costs
The high cost of production is one of the main factors limiting the market for silicon carbide (SiC) fine powder. Energy-intensive processes like chemical vapor deposition and carbothermal reduction of silica are used in the production of SiC, and they greatly raise the final cost. High-purity SiC powder production also necessitates sophisticated machinery and exacting quality control, which raises costs even more. Additionally, these high production costs result in higher final product prices, making them unaffordable for smaller producers and sectors with limited resources.
Technological developments in semiconductors
A promising growth path for silicon carbide fine powder is offered by the continuous improvements in semiconductor technology. As industries shift toward electronics that use less energy, SiC is becoming a more popular material for power devices like Schottky diodes and MOSFETs. Applications involving high frequency, high voltage, and high temperature-such as data centers, renewable energy systems, and industrial automation-are using these components more frequently. Furthermore, the need for SiC-based semiconductors is also being driven by the move to 5G networks and the Internet of Things (IoT), since these technologies perform better than conventional silicon.
Vigorous rivalry from alternatives
The growing competition from substitute materials is one of the main risks facing the market for silicon carbide (SiC) fine powder. For instance, because of their comparable qualities, affordability, and accessibility, aluminum oxide (Al2O3), boron carbide, and tungsten carbide are frequently regarded as good substitutes for SiC in a variety of applications. Widely used in ceramics and abrasives, aluminum oxide provides a more affordable option for sectors that don't need SiC's high electrical or thermal conductivity. Moreover, traditional silicon-based semiconductors still rule the electronics market, though new developments in silicon technologies have made them more competitive with SiC in some applications.
The market for silicon carbide (SiC) fine powder was significantly impacted by the COVID-19 pandemic, which caused disruptions in global supply chains, production schedules, and demand across a range of industries. Lockdowns and health precautions during the early stages of the pandemic forced many manufacturing facilities to shut down or scale back operations, which caused delays in the production and delivery of SiC fine powder. Additionally, there were also slowdowns in demand from important industries like electronics, automotive, and aerospace as businesses reduced their investments in new technologies or postponed projects.
The Abrasive Grade segment is expected to be the largest during the forecast period
The market for silicon carbide fine powder is expected to be dominated by the Abrasive Grade Silicon Carbide segment. Because of its durability and hardness, abrasive-grade silicon carbide is mostly used to make cutting tools, sandpaper, and grinding wheels. Its extensive uses in sectors like construction, metalworking, and automotive benefits this segment. It is perfect for precision abrasive applications because of its resistance to high temperatures and pressures. Furthermore, the need for high-performance materials in the production of precision goods fuels the demand for abrasive-grade SiC, and its use in surface preparation and polishing procedures further solidifies its position as the industry leader.
The Electronics and Semiconductors segment is expected to have the highest CAGR during the forecast period
The market for silicon carbide fine powder is anticipated to grow at the highest CAGR in the Electronics and Semiconductors segment. Because of its exceptional electrical conductivity, high thermal stability, and effectiveness in high-power applications, silicon carbide is essential to the electronics and semiconductor industries. SiC is being utilized more and more in power devices such as diodes, transistors, and MOSFETs, which are critical to the advancement of advanced communication technologies, renewable energy systems, and electric vehicles. Moreover, the electronics and semiconductor market is expected to expand quickly due to the growing need for high-performance, energy-efficient electronic components, especially as electric vehicles and renewable energy infrastructure become more popular.
The market for silicon carbide fine powder is dominated by the Asia Pacific region. The robust manufacturing sectors and industrial expansion in nations like China, Japan, and South Korea are the main drivers of this. Because of silicon carbide's high electrical characteristics, mechanical strength, and thermal conductivity, these nations are major players in industries like electronics, automotive, and energy. Additionally, the rapid industrialization of silicon carbide and the rising demand for energy-efficient technologies, such as electric vehicles and renewable energy systems, are supported by China's dominance in both the production and consumption of the material.
The silicon carbide fine powder market is anticipated to grow at the highest CAGR in the North American region. The rising need for silicon carbide in cutting-edge applications like power electronics, electric cars, and renewable energy sources is what is causing this growth. The adoption of SiC-based components in a variety of industries is being driven by the United States' emphasis on improving energy efficiency and lowering carbon emissions. Furthermore, the demand for high-performance materials like silicon carbide is also being fueled by the region's robust technological infrastructure as well as continuous research and development initiatives in the semiconductor and electronics industries.
Key players in the market
Some of the key players in Silicon Carbide Fine Powder market include Wolfspeed, Inc, STMicroelectronics, Advanced Abrasives Corporation, Fuji Electric Co., Ltd., Infineon Technologies AG, Carborundum Universal Limited, US Research Nanomaterials, Inc., Imerys, AGSCO Corp, Fiven ASA, Nanoshel, Coherent, Futong Industry Co. Limited, Entegris and Saint Gobain.
In October 2024, Wolfspeed, Inc. has amended its financial agreement with Renesas Electronics America Inc. The modification, effective as of Monday, allows Wolfspeed to convert accrued interest on loans into principal and secures the right to pledge assets for government grants. The original agreement, signed on July 5, 2023, allowed Renesas America to provide refundable deposits to Wolfspeed.
In April 2024, STMicroelectronics and Centrica Energy Trading A/S announced that they have signed a ten-year Power Purchase Agreement (PPA) for the supply of renewable energy to its operations in Italy, starting January 2025. The agreement is based on the sale by Centrica of approximately 61 GWh of renewable energy per year, produced by a new solar farm in Italy.
In February 2024, Infineon Technologies AG and ASE Technology Holding Co. have announced that definitive agreements were signed under which Infineon will sell two backend manufacturing sites, one in Cavite, Philippines, and one in Cheonan, South Korea, to two fully owned subsidiaries of ASE, a leading provider of independent semiconductor manufacturing services in assembly and test.