세계의 절연 게이트 양극성 트랜지스터(IGBT) 시장 예측(-2032년) : 유형별, 정격 전력별, 스위칭 주파수별, 패키지 유형별, 웨이퍼 사이즈별, 최종사용자별, 지역별 세계 분석

According to Stratistics MRC, the Global Insulated-Gate Bipolar Transistors (IGBTs) Market is accounted for $15.1 billion in 2025 and is expected to reach $29.4 billion by 2032 growing at a CAGR of 10% during the forecast period. Insulated-Gate Bipolar Transistors (IGBTs) are semiconductor devices that combine the high input impedance of MOSFETs with the low saturation voltage of bipolar transistors, making them highly efficient for power switching. They are used in applications such as electric vehicles, renewable energy systems, motor drives, and industrial equipment. IGBTs enable efficient power conversion, reducing energy losses while handling high voltages and currents. Their design supports compactness, durability, and reliability in demanding electronic systems.

According to the International Energy Agency (IEA), the explosive growth in electric vehicle production and EV charging infrastructure is the primary driver for increased manufacturing capacity and innovation in next-generation IGBT modules.

Market Dynamics:

Driver:

Demand for efficient power electronics

The IGBT market is strongly driven by the growing demand for efficient power electronics that enable energy savings and high-performance conversion. Increasing applications in renewable energy, electric vehicles, and industrial drives emphasize the need for reliable switching devices. IGBTs offer low conduction losses, high current density, and durability, making them vital in modern power architectures. Additionally, the global shift toward sustainability further boosts adoption, as industries seek energy-efficient solutions. This trend solidifies IGBTs as a cornerstone in advanced electronic systems.

Restraint:

Thermal management challenges in IGBTs

A major restraint in the IGBT market stems from thermal management challenges that hinder optimal performance. High switching and conduction losses generate heat, requiring advanced cooling systems for reliability. This increases design complexity and costs, especially in high-voltage applications like EV inverters and grid systems. Failure to effectively manage heat can reduce efficiency and device lifespan, discouraging wider adoption. Consequently, thermal bottlenecks remain a persistent hurdle for manufacturers aiming to expand IGBT deployment across energy-intensive and high-performance sectors.

Opportunity:

Integration in industrial automation systems

The integration of IGBTs in industrial automation systems represents a key opportunity for market expansion. Automated manufacturing, robotics, and smart factories rely on high-efficiency power devices to drive motors and control systems with precision. IGBTs enable compact, energy-efficient designs that reduce operational costs while enhancing productivity. With Industry 4.0 adoption accelerating worldwide, demand for reliable power semiconductors is surging. This industrial transformation provides a fertile ground for IGBT suppliers to expand market reach and tap into diverse automation-driven applications.

Threat:

Competition from wide bandgap semiconductors

The IGBT market faces a notable threat from wide bandgap semiconductors such as SiC and GaN. These alternatives offer superior efficiency, higher switching speeds, and better thermal performance, challenging IGBTs in applications like EVs and renewable inverters. As costs for SiC and GaN devices decline, end-users are increasingly shifting to these advanced materials. This trend could potentially limit IGBT growth in high-performance segments. Therefore, while IGBTs remain relevant, competition from wide bandgap technologies poses a long-term risk to their dominance.

Covid-19 Impact:

The COVID-19 pandemic initially disrupted supply chains, halting production and delaying shipments in the IGBT market. Automotive and industrial sectors, key end-users, experienced a temporary downturn, reducing demand. However, recovery was swift, fueled by accelerated EV adoption, renewable energy investments, and digital transformation initiatives. Post-pandemic, governments emphasized green energy projects, creating new opportunities for IGBTs in grid and mobility applications. Overall, while short-term setbacks were significant, the pandemic underscored the importance of resilient and energy-efficient power electronics solutions.

The discrete IGBT segment is expected to be the largest during the forecast period

The discrete IGBT segment is expected to account for the largest market share during the forecast period, owing to its widespread use in motor drives, UPS systems, and renewable energy inverters. Discrete IGBTs offer flexibility, compact design, and cost advantages, making them suitable for medium-power applications across automotive, consumer electronics, and industrial domains. Their ease of integration and reliability have ensured continued adoption across emerging markets. Consequently, discrete IGBTs remain the dominant product type in the global power electronics landscape.

The discrete packaging segment is expected to have the highest CAGR during the forecast period

Over the forecast period, the discrete packaging segment is predicted to witness the highest growth rate, driven by rising demand for compact and thermally efficient power solutions. Discrete packages enable better scalability, ease of design integration, and cost optimization compared to module-based designs. Their expanding role in automotive electronics, especially EV inverters and charging systems, further accelerates adoption. Moreover, advancements in packaging technologies improve reliability and efficiency. These advantages collectively position discrete packaging as the fastest-expanding segment in the IGBT market.

Region with largest share:

During the forecast period, the Asia Pacific region is expected to hold the largest market share, driven by rapid industrialization, expanding EV production, and strong renewable energy initiatives. Countries like China, Japan, and South Korea are leading adopters, with robust manufacturing ecosystems for power semiconductors. Significant investments in smart grids, transportation electrification, and consumer electronics further amplify regional demand. Additionally, low-cost manufacturing capabilities attract global suppliers. These dynamics establish Asia Pacific as the dominant hub for IGBT deployment and innovation.

Region with highest CAGR:

Over the forecast period, the North America region is anticipated to exhibit the highest CAGR, attributed to accelerating EV adoption, renewable integration, and industrial automation. Government policies supporting carbon reduction and clean energy deployment drive strong investments in advanced power electronics. The U.S. in particular is witnessing rising demand for IGBTs in automotive electrification and grid modernization projects. Additionally, the presence of technology innovators and R&D centers accelerates regional growth. Together, these factors make North America the fastest-growing IGBT market.

Key players in the market

Some of the key players in Insulated-Gate Bipolar Transistors (IGBTs) Market include Infineon Technologies AG, Mitsubishi Electric Corporation, Fuji Electric Co., Ltd., ON Semiconductor (onsemi), STMicroelectronics, Toshiba Corporation, Renesas Electronics Corporation, ROHM Co., Ltd., SEMIKRON Danfoss, ABB Ltd, Hitachi, Ltd., NXP Semiconductors, Littelfuse, Inc., Vishay Intertechnology, Inc., ELAN Electronics, Powerex, SMIC, and Microsemi.

Key Developments:

In May 2025, Infineon Technologies AG began volume production of its new CoolSiC(TM) hybrid IGBTs at its expanded facility in Villach, Austria. These modules combine Si IGBT and SiC diode technology to offer a cost-effective performance boost for industrial motor drives.

In April 2025, STMicroelectronics and Renault Group signed a long-term agreement for the supply of ST's ACEPACK DRIVE power modules, which use advanced IGBTs and SiC technology, for Renault's upcoming electric vehicle platforms.

In March 2025, onsemi (ON Semiconductor) announced the opening of its state-of-the-art IGBT and SiC module production line in Bucheon, South Korea, to better serve the growing APAC market for electric vehicle and industrial automation power solutions.

In February 2025, Fuji Electric Co., Ltd. launched the "X-series" of 7th generation IGBT modules, which feature a 10% increase in maximum operating temperature (Tvjop) to 175°C, enabling higher power density in solar inverters and UPS systems.

Types Covered:

• Discrete IGBT
• IGBT Module
• Intelligent Power Module (IPM)

Power Ratings Covered:

• Low Power IGBT (Up to 600 V)
• Medium Power IGBT (601 V - 1.2 kV)
• High Power IGBT (1.2 kV - 3.3 kV)
• Very High Power IGBT (3.3 kV - 6.5 kV)

Switching Frequencies Covered:

• Low-Frequency IGBT (Below 10 kHz)
• High-Frequency IGBT (Above 10 kHz)

Packaging Types Covered:

• Discrete Packaging
• Module Packaging
• Dual-In-Line Package (DIP)
• Surface-Mount Package (SMD)
• Press-Pack IGBT

Wafer Sizes Covered:

• 6-Inch Wafer
• 8-Inch Wafer

End Users Covered:

• Automotive & Transportation
• Energy & Utilities
• Industrial Manufacturing
• Consumer Electronics
• Other End Users

Regions Covered:

• North America
  • US
  • Canada
  • Mexico
• Europe
  • Germany
  • UK
  • Italy
  • France
  • Spain
  • Rest of Europe
• Asia Pacific
  • Japan
  • China
  • India
  • Australia
  • New Zealand
  • South Korea
  • Rest of Asia Pacific
• South America
  • Argentina
  • Brazil
  • Chile
  • Rest of South America
• Middle East & Africa
  • Saudi Arabia
  • UAE
  • Qatar
  • South Africa
  • Rest of Middle East & Africa

What our report offers:

• Market share assessments for the regional and country-level segments
• Strategic recommendations for the new entrants
• Covers Market data for the years 2024, 2025, 2026, 2028, and 2032
• Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
• Strategic recommendations in key business segments based on the market estimations
• Competitive landscaping mapping the key common trends
• Company profiling with detailed strategies, financials, and recent developments
• Supply chain trends mapping the latest technological advancements

Free Customization Offerings:

All the customers of this report will be entitled to receive one of the following free customization options:

• Company Profiling
  • Comprehensive profiling of additional market players (up to 3)
  • SWOT Analysis of key players (up to 3)
• Regional Segmentation
  • Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
• Competitive Benchmarking
  • Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

Table of Contents

1 Executive Summary

2 Preface

• 2.1 Abstract
• 2.2 Stake Holders
• 2.3 Research Scope
• 2.4 Research Methodology
  • 2.4.1 Data Mining
  • 2.4.2 Data Analysis
  • 2.4.3 Data Validation
  • 2.4.4 Research Approach
• 2.5 Research Sources
  • 2.5.1 Primary Research Sources
  • 2.5.2 Secondary Research Sources
  • 2.5.3 Assumptions

3 Market Trend Analysis

• 3.1 Introduction
• 3.2 Drivers
• 3.3 Restraints
• 3.4 Opportunities
• 3.5 Threats
• 3.6 End User Analysis
• 3.7 Emerging Markets
• 3.8 Impact of Covid-19

4 Porters Five Force Analysis

• 4.1 Bargaining power of suppliers
• 4.2 Bargaining power of buyers
• 4.3 Threat of substitutes
• 4.4 Threat of new entrants
• 4.5 Competitive rivalry

5 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type

• 5.1 Introduction
• 5.2 Discrete IGBT
• 5.3 IGBT Module
• 5.4 Intelligent Power Module (IPM)

6 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating

• 6.1 Introduction
• 6.2 Low Power IGBT (Up to 600 V)
• 6.3 Medium Power IGBT (601 V - 1.2 kV)
• 6.4 High Power IGBT (1.2 kV - 3.3 kV)
• 6.5 Very High Power IGBT (3.3 kV - 6.5 kV)

7 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Switching Frequency

• 7.1 Introduction
• 7.2 Low-Frequency IGBT (Below 10 kHz)
• 7.3 High-Frequency IGBT (Above 10 kHz)

8 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Packaging Type

• 8.1 Introduction
• 8.2 Discrete Packaging
• 8.3 Module Packaging
• 8.4 Dual-In-Line Package (DIP)
• 8.5 Surface-Mount Package (SMD)
• 8.6 Press-Pack IGBT

9 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Wafer Size

• 9.1 Introduction
• 9.2 6-Inch Wafer
• 9.3 8-Inch Wafer

10 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By End User

• 10.1 Introduction
• 10.2 Automotive & Transportation
• 10.3 Energy & Utilities
• 10.4 Industrial Manufacturing
• 10.5 Consumer Electronics
• 10.6 Other End Users

11 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Geography

• 11.1 Introduction
• 11.2 North America
  • 11.2.1 US
  • 11.2.2 Canada
  • 11.2.3 Mexico
• 11.3 Europe
  • 11.3.1 Germany
  • 11.3.2 UK
  • 11.3.3 Italy
  • 11.3.4 France
  • 11.3.5 Spain
  • 11.3.6 Rest of Europe
• 11.4 Asia Pacific
  • 11.4.1 Japan
  • 11.4.2 China
  • 11.4.3 India
  • 11.4.4 Australia
  • 11.4.5 New Zealand
  • 11.4.6 South Korea
  • 11.4.7 Rest of Asia Pacific
• 11.5 South America
  • 11.5.1 Argentina
  • 11.5.2 Brazil
  • 11.5.3 Chile
  • 11.5.4 Rest of South America
• 11.6 Middle East & Africa
  • 11.6.1 Saudi Arabia
  • 11.6.2 UAE
  • 11.6.3 Qatar
  • 11.6.4 South Africa
  • 11.6.5 Rest of Middle East & Africa

12 Key Developments

• 12.1 Agreements, Partnerships, Collaborations and Joint Ventures
• 12.2 Acquisitions & Mergers
• 12.3 New Product Launch
• 12.4 Expansions
• 12.5 Other Key Strategies

13 Company Profiling

• 13.1 Infineon Technologies AG
• 13.2 Mitsubishi Electric Corporation
• 13.3 Fuji Electric Co., Ltd.
• 13.4 ON Semiconductor (onsemi)
• 13.5 STMicroelectronics
• 13.6 Toshiba Corporation
• 13.7 Renesas Electronics Corporation
• 13.8 ROHM Co., Ltd.
• 13.9 SEMIKRON Danfoss
• 13.10 ABB Ltd
• 13.11 Hitachi, Ltd.
• 13.12 NXP Semiconductors
• 13.13 Littelfuse, Inc.
• 13.14 Vishay Intertechnology, Inc.
• 13.15 ELAN Electronics
• 13.16 Powerex
• 13.17 SMIC
• 13.18 Microsemi