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ÆÄ¿ö MOSFET ½ÃÀå : ¼¼°è »ê¾÷ ±Ô¸ð, Á¡À¯À², µ¿Çâ, ±âȸ, ¿¹Ãø(2018-2028³â) - À¯Çüº°, Àü·ÂÀ²º°, ä³Î À¯Çüº°, ¿ëµµº°, Áö¿ªº°, °æÀﺰPower MOSFET Market - Global Industry Size, Share, Trends, Opportunity, and Forecast, 2018-2028 Segmented By Type, By Power Rate, By Channel Type, By Application, By Region and Competition |
¼¼°èÀÇ ÆÄ¿ö MOSFET(±Ý¼Ó-»êȸ·-¹ÝµµÃ¼ Àü°è È¿°ú Æ®·£Áö½ºÅÍ) ½ÃÀåÀº ´Ù¾çÇÑ »ê¾÷¿¡¼ ÆÄ¿ö ÀÏ·ºÆ®·Î´Ð½ºÀÇ »ç¿ëÀÌ Áõ°¡Çϰí ÀÖ´Â °ÍÀ¸·Î ÀÎÇØ ¿¹Ãø ±â°£ Áß °ß°íÇÑ ÆäÀ̽º·Î ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹»óµÇ°í ÀÖ½À´Ï´Ù.
Àü±âÀÚµ¿Â÷(EV), Àç»ý ¿¡³ÊÁö ½Ã½ºÅÛ, »ê¾÷¿ë ¸ðÅÍ µå¶óÀ̺ê, ¼ÒºñÀÚ ÀüÀÚÁ¦Ç°, Åë½Å, µ¥ÀÌÅͼ¾ÅÍ µîÀÇ ¿ëµµ¿¡¼ Àü·Â MOSFETÀº ÀÌ·¯ÇÑ »ê¾÷ÀÌ °è¼Ó È®ÀåµÊ¿¡ µû¶ó ¼ö¿ä°¡ Áõ°¡Çϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ Àü·Â MOSFETÀº ¿¡³ÊÁö È¿À²À» Çâ»ó½ÃŰ´Â µ¥ ÇʼöÀûÀÔ´Ï´Ù. ¶ÇÇÑ Àü·Â MOSFETÀº Àü·ÂÀ» È¿À²ÀûÀ¸·Î ½ºÀ§ÄªÇÏ°í ½Ã½ºÅÛÀÇ ¿¡³ÊÁö ¼Õ½ÇÀ» ÃÖ¼ÒÈÇÒ ¼ö ÀÖÀ¸¹Ç·Î ¼ö¿ä°¡ ³ô½À´Ï´Ù. Àü·Â MOSFETÀº Àü·Â º¯È¯ ¹× Á¦¾î ½Ã½ºÅÛÀÇ È¿À²¼º Çâ»ó¿¡ ±â¿©ÇÏ¿© ¿¡³ÊÁö¸¦ Àý¾àÇÒ ¼ö ÀÖ½À´Ï´Ù.
ÆÄ¿ö MOSFETÀº ³ôÀº Àü·Â ·¹º§¿¡ ´ëÀÀÇÒ ¼ö ÀÖµµ·Ï ¸¸µé¾îÁ³½À´Ï´Ù. Àý¿¬ °ÔÀÌÆ®Çü ¹ÙÀÌÆú¶ó Æ®·£Áö½ºÅÍ(IGBT)¿Í »çÀ̸®½ºÅÍ´Â ÀúÀü¾Ð¿¡¼ ½ºÀ§Äª ¼Óµµ¿Í È¿À² Ãø¸é¿¡¼ À¯»çÇÑ ÀåÁ¡À» °¡Áø Àü·Â ¹ÝµµÃ¼ ¼ÒÀÚÀÔ´Ï´Ù. »çÀ̸®½ºÅÍ´Â IGBT¿Í Àý¿¬ °ÔÀÌÆ®¸¦ °øÀ¯Çϱ⠶§¹®¿¡ ±¸µ¿ÀÌ ¿ëÀÌÇϸç, IGBT´Â À̵æÀÌ ³·°í °ÔÀÌÆ® Àü¾ÐÀ» Á¦¾î Àü¾Ðº¸´Ù ³ô°Ô ¼³Á¤ÇØ¾ß ÇÒ ¼öµµ ÀÖ½À´Ï´Ù.
¿À´Ã³¯ÀÇ ÀüÀÚ±â±â¿¡´Â °í°´ÀÌ ´õ ¾È½ÉÇÏ°í ´õ ¸¹ÀÌ ÆÇ¸ÅÇÒ ¼ö ÀÖ´Â ¸¹Àº ±â´ÉÀÌ ÀÖ½À´Ï´Ù. ¼ÒºñÀÚÀÇ ¾ÈÀü ±âÁØÀÌ ³ô¾ÆÁö°í, ÈÞ´ëÆù, ÄÄÇ»ÅÍ, ¹«¼±Åë½Å, Ŭ¶ó¿ìµå ½Ã½ºÅÛ µî ÀüÀÚ ºÎǰÀÇ ±â¼ú ¹ßÀüÀ¸·Î ÀÎÇØ °³¼±µÈ ÀüÀÚ ±â±â ¹× Àåºñ¿¡ ´ëÇÑ »õ·Î¿î ºñÁî´Ï½º ±âȸ°¡ âÃâµÇ°í ÀÖ½À´Ï´Ù. Àü·Â MOSFETÀº ±â¼ú Çõ½ÅÀÇ ±Þ¼ÓÇÑ ¹ßÀü, »ý»ê¼º È®´ë, ÀüÀÚ ºÎǰÀÇ ¼ÒÇüÈ·Î ÀÎÇØ Áß¿äÇÑ ÀáÀç·ÂÀ» °¡Áö°í ÀÖ½À´Ï´Ù. ¶ÇÇÑ ³ª³ë ·¹±Ö·¹ÀÌÅÍ´Â ÃÖ¼ÒÇÑÀÇ Àü·Â ºÎÁ·À¸·Î »çÀÌŬÀ» ó¸®ÇÒ ¼ö ÀÖ´Â ±âÃʰ¡ µË´Ï´Ù. ´Ù¾çÇÑ ÀüÀÚ±â±â¸¦ Á¶Á¤ÇÔÀ¸·Î½á ½ÃÀå Âü¿©ÀÚµéÀº ¸¹Àº ÀáÀç·ÂÀ» ¾òÀ» ¼ö ÀÖÀ» °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
½ÃÀå °³¿ä | |
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¿¹Ãø ±â°£ | 2024-2028 |
½ÃÀå ±Ô¸ð 2022³â | 253¾ï 4,000¸¸ ´Þ·¯ |
2028³â ½ÃÀå ±Ô¸ð | 347¾ï 8,000¸¸ ´Þ·¯ |
CAGR 2023-2028 | 5.68% |
±Þ¼ºÀå ºÎ¹® | »ê¾÷¿ë |
ÃÖ´ë ½ÃÀå | ºÏ¹Ì |
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MOSFETÀº ÷´Ü ȸ·Î¿Í °£´ÜÇÑ È¸·Î¿¡ °¡Àå ÀϹÝÀûÀ¸·Î »ç¿ëµÇ´Â ¹ÝµµÃ¼ ÀåºñÀ̸ç, °¡Àå ÀÚÁÖ »ç¿ëµÇ´Â Àü·Â ÀåºñÀ̱⵵ ÇÕ´Ï´Ù. ¼öÃàÀº ÀüÀÚ ¹ÝµµÃ¼ ±â¼ú Çõ½ÅÀÇ ±Þ¼ÓÇÑ ¹ßÀüÀ» ÁÖµµÇÏ¿© ¸Þ¸ð¸® Ĩ ¹× ¸¶ÀÌÅ©·Î Ĩ°ú °°Àº °í¹Ðµµ ÁýÀûȸ·Î(IC)¿¡ ÈûÀ» ½Ç¾îÁÖ°í ÀÖ½À´Ï´Ù.
¿À´Ã³¯ÀÇ ±â°è´Â ¸Å¿ì À¯¿¬Çϰí, ÇÊ¿äÇÑ ÃÖ¼ÒÇÑÀÇ ÀÛ¾÷¸¸ ÇÒ ¼ö ÀÖÀ¸¸ç, »ý»ê¼ºÀÌ ³ô½À´Ï´Ù. ±â°è ¹× ÀüÀÚ Àåºñ ½ÃÀåÀº ¾ÕÀ¸·Îµµ °è¼Ó ¼ºÀåÇϰųª ¼ö¿ä¸¦ ´É°¡ÇÏ´Â ¼Óµµ·Î ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ´ëºÎºÐÀÇ ±â°è´Â ÆÄ¿ö MOSFETÀ¸·Î Àü·ÂÀ» °ü¸®Çϸç, MOSFET ¸ðµâÀº Àü¾Ð ½ºÀ§Äª ÀÛ¾÷¿¡ ÀÚÁÖ »ç¿ëµÇ¸ç, ¼¼°è¿¡¼ ¾à 7¸¸ 8,124GWÀÇ Ç³·Â ¹× ž籤¹ßÀü ¼³ºñ°¡ ÀÖ½À´Ï´Ù. Àü·Â MOSFET¿¡ Á÷Á¢ÀûÀ¸·Î µµ¿òÀÌ µÇ´Â Àü±â ±â°è ¼³ºñ¿¡ ´ëÇÑ ÀÇÁ¸µµ°¡ ³ô¾ÆÁö´Â °ÍÀº ¼¼°è Àü·Â MOSFET ½ÃÀå¿¡ ¿µÇâÀ» ¹ÌÄ¡´Â ÁÖ¿ä ¿äÀÎ Áß ÇϳªÀÔ´Ï´Ù.
¼¼°è ÆÄ¿ö MOSFET ½ÃÀåÀº ÀúÁÖÇà°Å¸® ¹«°øÇØ Â÷·® »ç¿ëÀ» Àå·ÁÇÏ´Â ¼¼Á¦ ÇýÅðú º¸Á¶±ÝÀ» Á¦°øÇÏ´Â Á¤ºÎ ±¸»ó·Î ÀÎÇØ ¿¹Ãø ±â°£ Áß È®´ëµÉ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ¶ÇÇÑ ¼ö¼Ò ¿¬·á °ø±Þ ½ºÅ×À̼ǰú Àü±âÀÚµ¿Â÷ ÃæÀü¼Ò ¼³Ä¡¿¡ ´ëÇÑ ÅõÀÚ Áõ°¡µµ ¼¼°è ½ÃÀåÀ» ÃËÁøÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ¶ÇÇÑ Àü±âÀÚµ¿Â÷ ¹èÅ͸® »ý»êÀÇ ´ëÁßÈ¿Í Áö¼ÓÀûÀÎ ±â¼ú ¹ßÀüÀ¸·Î ÀÎÇØ ¼¼°è ½ÃÀåÀº °¡°Ý Ç϶ôÀÇ ÇýÅÃÀ» ´©¸± °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ÈÞ´ë¿ë ÃæÀü±â, ¾î´ðÅÍ, Ä¿³ØÅÍ, ÃæÀü ÄÉÀ̺í°ú °°Àº Àü±âÀÚµ¿Â÷ Àåºñ ¹× ºÎǰ¿¡ ´ëÇÑ ³ôÀº ¼ö¿äµµ ¼¼°è ½ÃÀåÀ» ÃËÁøÇÏ´Â Áß¿äÇÑ ¿äÀÎÀÔ´Ï´Ù.
°ÔÀÌÆ® »êȸ·¿¡ ÀÇÇÑ Àý¿¬ ÆÄ±«, µå·¹ÀÎ-¼Ò½º °£ Àü¾Ð, ÃÖ´ë µå·¹ÀÎ Àü·ù, ¿Âµµ µîÀÇ Á¦¾àÀ¸·Î ÀÎÇØ ½ÃÀå È®´ë¿¡ °É¸²µ¹ÀÌ µÇ°í ÀÖ½À´Ï´Ù. °ÔÀÌÆ® »êȸ·Àº ¾ã±â ¶§¹®¿¡ Àý¿¬ ÆÄ±« ÇѰ谡 ¾è´Ù. °ÔÀÌÆ®-¼Ò½º °£ Àü¾ÐÀÌ ³ôÀ¸¸é MOSFETÀÇ ¼ö¸íÀÌ ´õ¿í ª¾ÆÁö°í °¨¼Ò È¿°ú°¡ °ÅÀÇ ¾øÀ¸¸ç, MOSFETÀº ¶ÇÇÑ Ã¤³Î-¼Ò½º °£ Àü¾Ð°ú Àü·ùÀÇ Æ¯Á¤ ôµµ¸¦ ÇÊ¿ä·Î ÇÕ´Ï´Ù. ÀÌ·¯ÇÑ ¿ä±¸ »çÇ×ÀÌ ÃæÁ·µÇÁö ¾ÊÀ¸¸é °ð Àý¿¬ ÆÄ±«°¡ ¹ß»ýÇÒ ¼ö ÀÖ½À´Ï´Ù.
¶ÇÇÑ Àü·Â MOSFETÀº ´©¼³ Àü·ù °æÇâÀÌ ÀÖÀ¸¸ç, ½ÃÀå ¼ºÀå¿¡ ¿µÇâÀ» ¹ÌĨ´Ï´Ù. ÆÄ¿ö MOSFETÀÇ ³ôÀº ¼³Ä¡ ºñ¿ëÀ¸·Î ÀÎÇØ Â÷·® °¡°ÝÀÌ »ó½ÂÇÏ°í ½ÃÀå È®´ë°¡ Á¦ÇÑµÉ ¼ö ÀÖ½À´Ï´Ù. ÀÚµ¿Â÷¿¡´Â ¼ö¸¹Àº ±â¼ú ºÎǰÀÌ ÀÖÀ¸¹Ç·Î À¯Áöº¸¼ö°¡ ¾î·Æ°í ¼÷·ÃµÈ ±â¼úÀÚ°¡ ÇÊ¿äÇÕ´Ï´Ù. º¹ÀâÇÑ ¾ÆÅ°ÅØÃ³¸¦ °¡Áø ½Ã½ºÅÛÀÇ ¼ö¸íÀÌ Âª½À´Ï´Ù. µû¶ó¼ À§ÀÇ ¿äÀεéÀÌ ¼¼°è ÆÄ¿ö MOSFET ½ÃÀåÀÇ ¼ºÀåÀ» ÀúÇØÇÒ °ÍÀ¸·Î ÃßÁ¤µË´Ï´Ù.
¼¼°èÀÇ ÆÄ¿ö MOSFET ½ÃÀåÀ» ÀÌÇÏ Ä«Å×°í¸®·Î ºÐ·ùÇϰí, ¾÷°è µ¿Çâ¿¡ ´ëÇØ¼µµ »ó¼úÇϰí ÀÖ½À´Ï´Ù.
(ÁÖ : ±â¾÷ ¸®½ºÆ®´Â °í°´ ¿ä±¸¿¡ µû¶ó Ä¿½ºÅ͸¶ÀÌÁî °¡´ÉÇÕ´Ï´Ù.)
KSA 23.11.06Global power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) market is expected to grow at a robust pace in the forecast period owing to the increasing use of power electronics in various industries. Applications like electric vehicles (EVs), renewable energy systems, industrial motor drives, consumer electronics, telecommunications, and data centers all require power MOSFETs as these industries continue to expand. Moreover, power MOSFETs are essential to increasing energy efficiency. Additionally, power MOSFETs are in high demand due to their capacity to switch power effectively and minimize system energy losses, both of which are becoming increasingly important in light of the growing emphasis on lowering energy consumption and power losses. They contribute to the improvement of power conversion and control systems efficiency, which results in energy savings.
A power MOSFET is made to handle significant power levels. The insulated-gate bipolar transistor (IGBT) or thyristor, two other power semiconductor devices, offer similar advantages in terms of switching speed and efficiency at low voltages. It shares an isolated gate with the IGBT, making it simple to drive. They may have low gain, sometimes to the point where the gate voltage must be higher than the control voltage.
Today's electronics have a lot of features that help customers feel more at ease and sell more. Consumer safety standards have been raised and new business opportunities for improved electronics and devices have emerged as a result of technological advancements in electronic components, such as cellphones, computers, wireless communication, and cloud systems, among others. Power MOSFET has critical potential due to the fast enhancements in innovation, expanded productivity, and little size of electronic parts. Furthermore, the nano regulator is fundamental for dealing with cycles with minimal measure of force misfortune. It is anticipated that coordinating various electronic gadgets would give market players a lot of possibilities.
Market Overview | |
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Forecast Period | 2024-2028 |
Market Size 2022 | USD 25.34 Billion |
Market Size 2028 | USD 34.78 Billion |
CAGR 2023-2028 | 5.68% |
Fastest Growing Segment | Industrial |
Largest Market | North America |
It is expected to face power problems in the future because fossil fuels are running out quickly. It shouldn't come as a surprise that energy conservation is getting more and more attention. A MOSFET is a switching component used in electric vehicle management, an inverter, and power supply. MOSFETs are frequently utilized in industrial settings with low switching frequencies. The increasing emphasis on energy efficiency and renewable sources has made this industry its own. It is anticipated that renewable energy with the greatest number of installations would make up a larger portion of the power module. Thus, these factors are expected to drive the global power MOSFET market.
MOSFETs are most generally involved semiconductor gadget in advanced and simple circuits, as well as the most frequently utilized power gadget. It is the primary tiny semiconductor, equipped for being cut back and efficiently manufactured for many applications. MOSFET scaling and contracting have driven the fast-outstanding development of electronic semiconductor innovation, empowering high-thickness incorporated circuits (ICs), for example, memory chips and microchips.
The power MOSFET is the world's most widely used power gadget. MOSFETs enjoy upper hands over bipolar intersection semiconductors in power hardware since they don't need a steady progression of driving current to stay in the ON state, offer more prominent exchanging speeds, lower exchanging power misfortunes, lower on-protections, and are less inclined to warm out of control. Power MOSFET impacts power supply, taking into consideration more prominent working frequencies, less size and weight, and bigger volume production. Thus, it is expected to boost the growth of global power MOSFET market.
Machines today are extremely flexible, minimal, and productive in doing what they are made to do, to such an extent as they have assumed control over a ton of exercises that were done physically. The market for machines and electronic equipment is expected to continue growing or grow faster than demand in the coming years. The majority of machinery manages power with power MOSFETs. The MOSFET module is frequently utilized for voltage switching operations, and there are approximately 78,124 gigawatt (GW) of wind and solar installations worldwide. The rising reliance on electrical machinery and equipment, which directly benefits power MOSFET, is one of the primary factors influencing the market for global power MOSFET.
The global power MOSFET market is anticipated to expand over the forecast period as a result of government initiatives to provide tax rebates and subsidies to encourage the use of low-range, zero-emission vehicles worldwide. The global market is also anticipated to be driven by rising investments in the creation of hydrogen fueling and electric vehicle charging stations. In addition, it is anticipated that the global market will benefit from a decrease in the price of electric vehicle batteries as a result of their widespread production and ongoing technological advancements. Another significant factor that would propel the global market is the high demand for electric vehicle equipment and components like portable chargers, adapters, connectors, and charging cables.
Limitations like breakdown caused by gate oxide, drain to source voltage, maximum drain current, and temperature prevent this market from expanding. Because of its thinness, gate oxide has a shallow breakdown limit. The MOSFET's life is further shortened by a high gate to source voltage, and this has little to no effect on reduction. The MOSFET too needs a particular measure of channel to source voltage and current; A breakdown could occur quickly if these requirements are not met.
Additionally, power MOSFET's have a tendency to leak current, impacting its market growth. The high installation costs for power MOSFETs may limit market expansion as this component raises vehicle prices. Due to the vehicle's numerous technological components, its serviceability is challenging and necessitates skilled personnel. The lifespan of systems with complex architectures is shorter. Subsequently, it is guessed that the factors referenced above are expected to cause hindrance to the growth of global power MOSFET market.
The global power MOSFET market is segmented based on type, power rate, channel type, application, and region. Based on type, the market is bifurcated into depletion mode and enhancement mode. Based on power rate, the market is bifurcated into high power, medium power, and low power. Based on channel type, the market is bifurcated into N-channel and P-channel. Based on application, the market is bifurcated into energy & power, inverter & ups, consumer electronics, automotive, industrial, and others. Based on region, the market is further bifurcated into North America, Asia-Pacific, Europe, South America, and Middle East & Africa.
The main market players in the global power MOSFET market are Digi-Key Corporation, Infineon Technologies AG, Renesas Electronics Corporation, Toshiba Corporation, IXYS Corporation, STMicroelectronics N.V., Microchip Technology Inc., Power Integration Inc., Sumitomo Electric Industries Ltd., and Hitachi Power Semiconductor Device Ltd.
In this report, global power MOSFET market has been segmented into the following categories, in addition to the industry trends which have also been detailed below.
(Note: The companies list can be customized based on the client requirements.)