질화갈륨(GaN) 반도체 디바이스 시장 - 세계 산업 규모, 점유율, 동향, 기회, 예측 : 제품별, 구성요소별, 최종사용자별, 지역별, 경쟁별(2018-2028년)

Global Gallium Nitride Semiconductor Devices Market was valued at USD 24.77 Billion in 2022 and is anticipated to project robust growth in the forecast period with a CAGR of 5.80% through 2028. GaN devices are increasingly being adopted in consumer electronics products, such as smartphones, laptops, and televisions. This is due to the fact that GaN devices can help to improve the performance and energy efficiency of these products. The rollout of 5G networks is creating new opportunities for the GaN semiconductor devices market. GaN devices are used in a variety of 5G components, such as base stations, power amplifiers, and filters. The GaN semiconductor devices market has witnessed significant growth in recent years, driven by increasing demand for high-performance electronics across various sectors. The market's growth can be attributed to several key factors: GaN devices offer superior power efficiency compared to traditional silicon devices. They enable power conversion with reduced energy losses, making them ideal for applications like power supplies, electric vehicles, and renewable energy systems. GaN's wide bandgap allows devices to operate at higher frequencies, making them suitable for 5G communications, radar systems, and advanced wireless technologies. GaN devices are smaller and lighter than their silicon counterparts, making them ideal for portable and mobile applications, such as smartphones, laptops, and drones. The defense and aerospace industries are increasingly adopting GaN devices for radar systems, electronic warfare, and communications due to their high-frequency capabilities and ruggedness. GaN devices are becoming crucial in the automotive sector for electric vehicle power electronics, enabling faster charging and increased range. They also find applications in advanced driver-assistance systems (ADAS). GaN power electronics play a vital role in renewable energy systems, improving the efficiency of solar inverters and wind turbine converters. With the growth of the Internet of Things (IoT) and smart devices, GaN devices are essential for power-efficient and high-frequency connectivity solutions. Ongoing research and development efforts are continuously enhancing GaN device performance, reliability, and cost-effectiveness, further driving market growth.

Key Market Drivers

High Power Efficiency:

One of the primary drivers for the adoption of GaN semiconductor devices is their superior power efficiency compared to silicon-based counterparts. GaN devices enable power conversion with significantly reduced energy losses, making them ideal for various applications. In the field of renewable energy, GaN-based power converters are revolutionizing the efficiency of solar inverters. Companies like SolarEdge Technologies have integrated GaN technology into their inverters, increasing the overall energy yield of solar installations.

High-Frequency Operation:

GaN's wide bandgap allows devices to operate efficiently at higher frequencies. This property is critical for emerging technologies such as 5G communication systems, radar applications, and advanced wireless solutions. In the realm of 5G, Qorvo, a leading GaN semiconductor device manufacturer, supplies high-performance GaN RF solutions for 5G base stations. These GaN devices enable faster data transmission and improved network coverage.

GaN devices are inherently smaller and lighter than their silicon counterparts, making them a preferred choice for portable and mobile applications. GaN-based power amplifiers are used in the aerospace industry to reduce the weight of satellite payloads. These amplifiers, provided by companies like Cree, contribute to the development of lightweight and cost-effective satellite systems.

Defense and Aerospace Applications:

The defense and aerospace industries are increasingly turning to GaN devices due to their high-frequency capabilities and ruggedness, making them suitable for radar systems, electronic warfare, and secure communications. GaN power amplifiers from companies like Northrop Grumman are integrated into advanced radar systems. These amplifiers enhance the radar's performance, providing critical information to military personnel.

GaN devices are gaining prominence in the automotive sector, particularly in electric vehicles (EVs). Their ability to handle high frequencies and voltages is vital for efficient power electronics in EVs, leading to faster charging and increased range. Tesla, a pioneering EV manufacturer, utilizes GaN technology in its electric vehicle power electronics. This integration results in faster charging times and improved energy efficiency.

Renewable Energy:

GaN power electronics play a vital role in renewable energy systems, where they enhance the efficiency and performance of solar inverters and wind turbine converters. Infineon Technologies, a prominent player in the GaN semiconductor devices market, provides GaN-based power modules for solar inverters. These modules improve the conversion efficiency of solar energy into electricity.

With the rapid growth of the Internet of Things (IoT) and the proliferation of smart devices, GaN devices are essential for power-efficient and high-frequency connectivity solutions. GaN power amplifiers are integral components of IoT devices like remote sensors and smart appliances, enabling efficient wireless communication.

GaN chargers are becoming increasingly popular in consumer electronics. These chargers are compact and deliver fast-charging capabilities, addressing the demands of modern consumers. Brands like Anker and RAVPower offer GaN-based chargers that are smaller and more efficient than traditional chargers, enabling users to charge their devices quickly and conveniently.

Strong R&D Efforts:

Ongoing research and development efforts in the GaN semiconductor devices sector are continuously improving device performance, reliability, and cost-effectiveness, further driving market growth. Universities and research institutions worldwide are actively engaged in GaN-related research. Their contributions to materials science and device development play a crucial role in advancing GaN technology.. The United States and Canada are at the forefront of GaN device adoption, particularly in defense, aerospace, and automotive applications. Companies like Raytheon Technologies and Ford Motor Company are actively integrating GaN devices into their systems. Countries such as China, Japan, and South Korea are witnessing significant growth in GaN device production and consumption. The thriving electronics and automotive industries in the region are driving this expansion. For instance, South Korean electronics giant Samsung incorporates GaN technology into its high-frequency devices.

Key Market Challenges

Cost of Production:

GaN devices have historically been more expensive to manufacture than silicon devices. This cost disparity has limited their adoption in cost-sensitive applications. Significant efforts are underway to reduce the production costs of GaN devices. Economies of scale, process refinements, and advancements in GaN-on-silicon technology are gradually narrowing the cost gap. Real-world example: The development of GaN-on-silicon substrates has led to cost reductions, making GaN devices more competitive with silicon devices in certain applications.

Market Education and Awareness:

Many industries and professionals are not familiar with GaN technology and its benefits. Lack of awareness can impede the adoption of GaN devices. Educational initiatives and collaborative efforts are essential for increasing awareness and understanding of GaN technology. Industry seminars, workshops, and partnerships with academic institutions can help bridge the knowledge gap. Real-world example: GaN technology seminars and webinars organized by semiconductor companies and industry associations have successfully educated engineers and decision-makers about GaN's advantages.

Supply Chain Constraints:

GaN materials and substrates are not as widely available as silicon, leading to potential supply chain bottlenecks. To mitigate supply chain constraints, the industry is diversifying its sources of GaN materials and collaborating with suppliers to ensure a stable supply chain. Real-world example: Companies are forming strategic partnerships with GaN material suppliers to secure a consistent and diversified supply of high-quality GaN materials.

Standardization:

The absence of standardized specifications and testing procedures for GaN devices can hinder their adoption. Industry organizations and consortia are actively working on developing standards for GaN devices. This includes establishing standardized test methods and performance metrics. Real-world example: The Power GaN Community, a consortium of GaN device manufacturers and users, is working to create standards that promote interoperability and consistency in GaN power electronics.

Reliability and Quality Assurance:

Ensuring the reliability and quality of GaN devices, particularly for mission-critical applications, is crucial but challenging. Rigorous testing and qualification processes are being implemented to enhance GaN device reliability. This includes accelerated lifetime testing, failure mode analysis, and improved packaging techniques. Real-world example: Defense and aerospace companies have stringent reliability standards for GaN devices used in critical systems. These standards ensure that GaN components meet the required reliability benchmarks.

Integration Challenges:

Integrating GaN devices into existing systems and processes can be complex, especially when transitioning from silicon-based components. Companies are providing application-specific support and reference designs to ease the integration of GaN devices into various systems. This includes offering comprehensive technical documentation and application notes. Real-world example: GaN device manufacturers collaborate with system integrators to develop application-specific solutions that streamline integration and optimize performance.

Heat Management:

Challenge: GaN devices can generate substantial heat, which must be efficiently managed to ensure optimal performance and reliability. Advanced thermal management solutions, such as heat sinks, thermal interface materials, and packaging innovations, are being developed to dissipate heat effectively. Real-world example: GaN power amplifier manufacturers incorporate advanced thermal design features into their products to ensure efficient heat dissipation, enhancing device longevity.

Regulatory Compliance:

GaN devices may require compliance with specific regulations and standards, depending on their application. Companies are proactively ensuring that their GaN devices meet regulatory requirements by conducting thorough testing and certification processes. Real-world example: Medical device manufacturers using GaN components ensure that their products adhere to stringent regulatory standards, including FDA approvals for safety and performance. The GaN semiconductor devices market is poised for substantial growth due to its exceptional performance characteristics. However, addressing challenges such as cost, market education, supply chain constraints, standardization, reliability, integration, heat management, and regulatory compliance is vital to unlocking GaN's full potential. The industry's proactive approach, characterized by collaborative efforts, innovation, and rigorous testing, is steadily overcoming these challenges. As a result, GaN technology is becoming more accessible and reliable, leading to increased adoption in diverse applications, from consumer electronics to defense and renewable energy. In conclusion, the GaN semiconductor devices market is on a trajectory of growth and transformation, driven by the collective efforts of industry leaders to overcome challenges and realize the vast potential of this disruptive technology.

Key Market Trends

High Power Efficiency:

GaN devices offer superior power efficiency compared to traditional silicon devices. They enable power conversion with reduced energy losses, making them ideal for various applications. In the renewable energy sector, GaN-based power converters are revolutionizing the efficiency of solar inverters. Companies like SolarEdge Technologies have integrated GaN technology into their inverters, leading to increased energy yields in solar installations.

GaN's wide bandgap allows devices to operate efficiently at higher frequencies, making them suitable for emerging technologies such as 5G communication systems, radar applications, and advanced wireless solutions. In the 5G arena, Qorvo, a leading GaN semiconductor device manufacturer, supplies high-performance GaN RF solutions for 5G base stations. These GaN devices enable faster data transmission and improved network coverage.

Miniaturization and Lightweight Design:

GaN devices are inherently smaller and lighter than their silicon counterparts, making them a preferred choice for portable and mobile applications. GaN-based power amplifiers are used in the aerospace industry to reduce the weight of satellite payloads. These amplifiers, provided by companies like Cree, contribute to the development of lightweight and cost-effective satellite systems. The defense and aerospace industries are increasingly turning to GaN devices due to their high-frequency capabilities and ruggedness, making them suitable for radar systems, electronic warfare, and secure communications. GaN power amplifiers from companies like Northrop Grumman are integrated into advanced radar systems. These amplifiers enhance the radar's performance, providing critical information to military personnel.

Automotive Electronics

GaN devices are gaining prominence in the automotive sector, particularly in electric vehicles (EVs). Their ability to handle high frequencies and voltages is vital for efficient power electronics in EVs, leading to faster charging and increased range. Tesla, a pioneering EV manufacturer, utilizes GaN technology in its electric vehicle power electronics. This integration results in faster charging times and improved energy efficiency.

Renewable Energy:

GaN power electronics play a vital role in renewable energy systems, where they enhance the efficiency and performance of solar inverters and wind turbine converters. Infineon Technologies, a prominent player in the GaN semiconductor devices market, provides GaN-based power modules for solar inverters. These modules improve the conversion efficiency of solar energy into electricity.

With the rapid growth of the Internet of Things (IoT) and the proliferation of smart devices, GaN devices are essential for power-efficient and high-frequency connectivity solutions. GaN power amplifiers are integral components of IoT devices like remote sensors and smart appliances, enabling efficient wireless communication.

Consumer Electronics:

Trend: GaN chargers are becoming increasingly popular in consumer electronics. These chargers are compact and deliver fast-charging capabilities, addressing the demands of modern consumers. Brands like Anker and RAVPower offer GaN-based chargers that are smaller and more efficient than traditional chargers, enabling users to charge their devices quickly and conveniently.

Segmental Insights

Component Insights

Based on Component, the market is bifurcated into Transistors, Power IC, Rectifier, and Others. The Transistor segment is anticipated to dominate the Gallium Nitride Semiconductor Device Market. GaN-based power transistors and devices supporting 4G technology have seen a surge in acceptance in recent years, raising demand for high-power transistors for base stations used in the telecommunications industry. Additionally, the segment growth has been supported by the growing use of GaN transistors in propulsion systems for electric and hybrid cars, such as Field Effect Transistors (FET) and Insulated Gate Bipolar Transistors (IGBT).

End-User Insights

Based on End-User, the market is bifurcated into Information & Communication Technology, Defense & Aerospace, Consumer Electronics, Healthcare, and Others. The Information & Communication Technology segment is anticipated to dominate the Gallium Nitride Semiconductor Device Market. The global deployment of Internet-of-Things (IoT) technology is a significant factor in the category growth. IoT devices require effective and economical parts that allow for a continuous flow of information. GaN-based semiconductors are anticipated to meet the criteria for IoT-enabled goods' low power consumption and high efficiency.

Regional Insights

North America is expected to dominate the market during the forecast period. On the basis of Regional Analysis, the Global Gallium Nitride (GaN) Semiconductor Device is classified into North America, Europe, Asia Pacific, and the Rest of the world. North America will hold the largest Gallium Nitride Semiconductor Device Market. The market expansion in the area is being fueled by the defense and aerospace industry's growing spending in R&D. Furthermore, it is anticipated that the business in the region would be driven by government support given to semiconductor firms.

Rapid technological improvements are expected to enhance demand for high-performance and efficient radio frequency components, which will cause the Asia Pacific regional market to overgrow during the projected period.

Key Market Players

Cree, Inc.

Efficient Power Conversion Corporation

Fujitsu Ltd.

GaN Systems

Infineon Technologies AG

NexgenPowerSystems

NXP Semiconductor

Qorvo, Inc.

Report Scope:

In this report, the Global Gallium Nitride Semiconductor Devices Market has been segmented into the following categories, in addition to the industry trends which have also been detailed below:

Global Gallium Nitride Semiconductor Devices Market, By Product:

• Power Semiconductor
• RF Semiconductor

Global Gallium Nitride Semiconductor Devices Market, By End- user:

• Consumer Electronics
• Healthcare

Global Gallium Nitride Semiconductor Devices Market, By Component :

• Transistors
• Power IC

Global Gallium Nitride Semiconductor Devices Market, By Region:

• North America
• United States
• Canada
• Mexico
• Asia-Pacific
• China
• India
• Japan
• South Korea
• Indonesia
• Europe
• Germany
• United Kingdom
• France
• Russia
• Spain
• South America
• Brazil
• Argentina
• Middle East & Africa
• Saudi Arabia
• South Africa
• Egypt
• UAE
• Israel

Competitive Landscape

• Company Profiles: Detailed analysis of the major companies present in the Global Gallium Nitride Semiconductor Devices Market.

Available Customizations:

• Global Gallium Nitride Semiconductor Devices Market report with the given market data, Tech Sci Research offers customizations according to a company's specific needs. The following customization options are available for the report:

Company Information

• Detailed analysis and profiling of additional market players (up to five).

Table of Contents

1. Product Overview

• 1.1. Market Definition
• 1.2. Scope of the Market
• 1.3. Markets Covered
• 1.4. Years Considered for Study
• 1.5. Key Market Segmentations

2. Research Methodology

• 2.1. Objective of the Study
• 2.2. Baseline Methodology
• 2.3. Key Industry Partners
• 2.4. Major Association and Secondary Sources
• 2.5. Forecasting Methodology
• 2.6. Data Triangulation & Validation
• 2.7. Assumptions and Limitations

3. Executive Summary

4. Voice of Customers

5. Global Gallium Nitride Semiconductor Devices Market Outlook

• 5.1. Market Size & Forecast
  • 5.1.1. By Value
• 5.2. Market Share & Forecast
  • 5.2.1. By Product (Power Semiconductor, RF Semiconductor)
  • 5.2.2. By Component (Transistors, Power IC)
  • 5.2.3. By End-User (Consumer Electronics, Healthcare)
  • 5.2.4. By Region
• 5.3. By Company (2022)
• 5.4. Market Map

6. North America Gallium Nitride Semiconductor Devices Market Outlook

• 6.1. Market Size & Forecast
  • 6.1.1. By Value
• 6.2. Market Share & Forecast
  • 6.2.1. By Product
  • 6.2.2. By Component
  • 6.2.3. By End Use
  • 6.2.4. By Country
• 6.3. North America: Country Analysis
  • 6.3.1. United States Gallium Nitride Semiconductor Devices Market Outlook
    • 6.3.1.1. Market Size & Forecast
      • 6.3.1.1.1. By Value
    • 6.3.1.2. Market Share & Forecast
      • 6.3.1.2.1. By Product
      • 6.3.1.2.2. By Component
      • 6.3.1.2.3. By End Use
  • 6.3.2. Canada Gallium Nitride Semiconductor Devices Market Outlook
    • 6.3.2.1. Market Size & Forecast
      • 6.3.2.1.1. By Value
    • 6.3.2.2. Market Share & Forecast
      • 6.3.2.2.1. By Product
      • 6.3.2.2.2. By Component
      • 6.3.2.2.3. By End Use
  • 6.3.3. Mexico Gallium Nitride Semiconductor Devices Market Outlook
    • 6.3.3.1. Market Size & Forecast
      • 6.3.3.1.1. By Value
    • 6.3.3.2. Market Share & Forecast
      • 6.3.3.2.1. By Product
      • 6.3.3.2.2. By Component
      • 6.3.3.2.3. By End Use

7. Asia-Pacific Gallium Nitride Semiconductor Devices Market Outlook

• 7.1. Market Size & Forecast
  • 7.1.1. By Value
• 7.2. Market Share & Forecast
  • 7.2.1. By Product
  • 7.2.2. By Component
  • 7.2.3. By End Use
  • 7.2.4. By Country
• 7.3. Asia-Pacific: Country Analysis
  • 7.3.1. China Gallium Nitride Semiconductor Devices Market Outlook
    • 7.3.1.1. Market Size & Forecast
      • 7.3.1.1.1. By Value
    • 7.3.1.2. Market Share & Forecast
      • 7.3.1.2.1. By Product
      • 7.3.1.2.2. By Component
      • 7.3.1.2.3. By End Use
  • 7.3.2. India Gallium Nitride Semiconductor Devices Market Outlook
    • 7.3.2.1. Market Size & Forecast
      • 7.3.2.1.1. By Value
    • 7.3.2.2. Market Share & Forecast
      • 7.3.2.2.1. By Product
      • 7.3.2.2.2. By Component
      • 7.3.2.2.3. By End Use
  • 7.3.3. Japan Gallium Nitride Semiconductor Devices Market Outlook
    • 7.3.3.1. Market Size & Forecast
      • 7.3.3.1.1. By Value
    • 7.3.3.2. Market Share & Forecast
      • 7.3.3.2.1. By Product
      • 7.3.3.2.2. By Component
      • 7.3.3.2.3. By End Use
  • 7.3.4. South Korea Gallium Nitride Semiconductor Devices Market Outlook
    • 7.3.4.1. Market Size & Forecast
      • 7.3.4.1.1. By Value
    • 7.3.4.2. Market Share & Forecast
      • 7.3.4.2.1. By Product
      • 7.3.4.2.2. By Component
      • 7.3.4.2.3. By End Use
  • 7.3.5. Indonesia Gallium Nitride Semiconductor Devices Market Outlook
    • 7.3.5.1. Market Size & Forecast
      • 7.3.5.1.1. By Value
    • 7.3.5.2. Market Share & Forecast
      • 7.3.5.2.1. By Product
      • 7.3.5.2.2. By Component
      • 7.3.5.2.3. By End Use

8. Europe Gallium Nitride Semiconductor Devices Market Outlook

• 8.1. Market Size & Forecast
  • 8.1.1. By Value
• 8.2. Market Share & Forecast
  • 8.2.1. By Product
  • 8.2.2. By Component
  • 8.2.3. By End Use
  • 8.2.4. By Country
• 8.3. Europe: Country Analysis
  • 8.3.1. Germany Gallium Nitride Semiconductor Devices Market Outlook
    • 8.3.1.1. Market Size & Forecast
      • 8.3.1.1.1. By Value
    • 8.3.1.2. Market Share & Forecast
      • 8.3.1.2.1. By Product
      • 8.3.1.2.2. By Component
      • 8.3.1.2.3. By End Use
  • 8.3.2. United Kingdom Gallium Nitride Semiconductor Devices Market Outlook
    • 8.3.2.1. Market Size & Forecast
      • 8.3.2.1.1. By Value
    • 8.3.2.2. Market Share & Forecast
      • 8.3.2.2.1. By Product
      • 8.3.2.2.2. By Component
      • 8.3.2.2.3. By End Use
  • 8.3.3. France Gallium Nitride Semiconductor Devices Market Outlook
    • 8.3.3.1. Market Size & Forecast
      • 8.3.3.1.1. By Value
    • 8.3.3.2. Market Share & Forecast
      • 8.3.3.2.1. By Product
      • 8.3.3.2.2. By Component
      • 8.3.3.2.3. By End Use
  • 8.3.4. Russia Gallium Nitride Semiconductor Devices Market Outlook
    • 8.3.4.1. Market Size & Forecast
      • 8.3.4.1.1. By Value
    • 8.3.4.2. Market Share & Forecast
      • 8.3.4.2.1. By Product
      • 8.3.4.2.2. By Component
      • 8.3.4.2.3. By End Use
  • 8.3.5. Spain Gallium Nitride Semiconductor Devices Market Outlook
    • 8.3.5.1. Market Size & Forecast
      • 8.3.5.1.1. By Value
    • 8.3.5.2. Market Share & Forecast
      • 8.3.5.2.1. By Product
      • 8.3.5.2.2. By Component
      • 8.3.5.2.3. By End Use

9. South America Gallium Nitride Semiconductor Devices Market Outlook

• 9.1. Market Size & Forecast
  • 9.1.1. By Value
• 9.2. Market Share & Forecast
  • 9.2.1. By Product
  • 9.2.2. By Component
  • 9.2.3. By End Use
  • 9.2.4. By Country
• 9.3. South America: Country Analysis
  • 9.3.1. Brazil Gallium Nitride Semiconductor Devices Market Outlook
    • 9.3.1.1. Market Size & Forecast
      • 9.3.1.1.1. By Value
    • 9.3.1.2. Market Share & Forecast
      • 9.3.1.2.1. By Product
      • 9.3.1.2.2. By Component
      • 9.3.1.2.3. By End Use
  • 9.3.2. Argentina Gallium Nitride Semiconductor Devices Market Outlook
    • 9.3.2.1. Market Size & Forecast
      • 9.3.2.1.1. By Value
    • 9.3.2.2. Market Share & Forecast
      • 9.3.2.2.1. By Product
      • 9.3.2.2.2. By Component
      • 9.3.2.2.3. By End Use

10. Middle East & Africa Gallium Nitride Semiconductor Devices Market Outlook

• 10.1. Market Size & Forecast
  • 10.1.1. By Value
• 10.2. Market Share & Forecast
  • 10.2.1. By Product
  • 10.2.2. By Component
  • 10.2.3. By End Use
  • 10.2.4. By Country
• 10.3. Middle East & Africa: Country Analysis
  • 10.3.1. Saudi Arabia Gallium Nitride Semiconductor Devices Market Outlook
    • 10.3.1.1. Market Size & Forecast
      • 10.3.1.1.1. By Value
    • 10.3.1.2. Market Share & Forecast
      • 10.3.1.2.1. By Product
      • 10.3.1.2.2. By Component
      • 10.3.1.2.3. By End Use
  • 10.3.2. South Africa Gallium Nitride Semiconductor Devices Market Outlook
    • 10.3.2.1. Market Size & Forecast
      • 10.3.2.1.1. By Value
    • 10.3.2.2. Market Share & Forecast
      • 10.3.2.2.1. By Product
      • 10.3.2.2.2. By Component
      • 10.3.2.2.3. By End Use
  • 10.3.3. UAE Gallium Nitride Semiconductor Devices Market Outlook
    • 10.3.3.1. Market Size & Forecast
      • 10.3.3.1.1. By Value
    • 10.3.3.2. Market Share & Forecast
      • 10.3.3.2.1. By Product
      • 10.3.3.2.2. By Component
      • 10.3.3.2.3. By End Use
  • 10.3.4. Israel Gallium Nitride Semiconductor Devices Market Outlook
    • 10.3.4.1. Market Size & Forecast
      • 10.3.4.1.1. By Value
    • 10.3.4.2. Market Share & Forecast
      • 10.3.4.2.1. By Product Type
      • 10.3.4.2.2. By Voltage
      • 10.3.4.2.3. By End Use
  • 10.3.5. Egypt Gallium Nitride Semiconductor Devices Market Outlook
    • 10.3.5.1. Market Size & Forecast
      • 10.3.5.1.1. By Value
    • 10.3.5.2. Market Share & Forecast
      • 10.3.5.2.1. By Product
      • 10.3.5.2.2. By Component
      • 10.3.5.2.3. By End Use

11. Market Dynamics

• 11.1. Drivers
• 11.2. Challenge

12. Market Trends & Developments

13. Company Profiles

• 13.1. Cree, Inc.
  • 13.1.1. Business Overview
  • 13.1.2. Key Revenue and Financials
  • 13.1.3. Recent Developments
  • 13.1.4. Key Personnel
  • 13.1.5. Key Product/Services
• 13.2. Efficient Power Conversion Corporation.
  • 13.2.1. Business Overview
  • 13.2.2. Key Revenue and Financials
  • 13.2.3. Recent Developments
  • 13.2.4. Key Personnel
  • 13.2.5. Key Product/Services
• 13.3. Fujitsu Ltd.
  • 13.3.1. Business Overview
  • 13.3.2. Key Revenue and Financials
  • 13.3.3. Recent Developments
  • 13.3.4. Key Personnel
  • 13.3.5. Key Product/Services
• 13.4. GaN Systems.
  • 13.4.1. Business Overview
  • 13.4.2. Key Revenue and Financials
  • 13.4.3. Recent Developments
  • 13.4.4. Key Personnel
  • 13.4.5. Key Product/Services
• 13.5. Infineon Technologies AG.
  • 13.5.1. Business Overview
  • 13.5.2. Key Revenue and Financials
  • 13.5.3. Recent Developments
  • 13.5.4. Key Personnel
  • 13.5.5. Key Product/Services
• 13.6. NexgenPowerSystems.
  • 13.6.1. Business Overview
  • 13.6.2. Key Revenue and Financials
  • 13.6.3. Recent Developments
  • 13.6.4. Key Personnel
  • 13.6.5. Key Product/Services
• 13.7. Qorvo, Inc.
  • 13.7.1. Business Overview
  • 13.7.2. Key Revenue and Financials
  • 13.7.3. Recent Developments
  • 13.7.4. Key Personnel
  • 13.7.5. Key Product/Services

14. Strategic Recommendations

15. About Us & Disclaimer