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¼¼°èÀÇ SiC MOSFET Ĩ ¹× ¸ðµâ ½ÃÀå : ÇöȲ ºÐ¼® ¹× ¿¹Ãø(2024-2032³â)SiC MOSFET Chips (Devices) and Module Market: Current Analysis and Forecast (2024-2032) |
SiC MOSFET Ĩ ¹× ¸ðµâ ½ÃÀåÀº ¿¡³ÊÁö È¿À²ÀûÀÎ ¼Ö·ç¼Ç¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡, Àü±âÀÚµ¿Â÷(EV) º¸±Þ È®´ë, °¢ Áö¿ª ¹× ÁÖ¿ä ±¹°¡ Á¤ºÎ ÁÖµµÀÇ ³ì»ö ÀÌ´Ï¼ÅÆ¼ºêÀÇ ÀÏȯÀ¸·Î Àç»ý °¡´É ¿¡³ÊÁö ÇÁ·ÎÁ§Æ® È®´ë, ¿¡³ÊÁö È¿À² ¹× ÀÌ»êÈź¼Ò ¹èÃâ °¨¼Ò¸¦ ÃËÁøÇÏ´Â ¾ö°ÝÇÑ Á¤ºÎ ±ÔÁ¦¿¡ ÈûÀÔ¾î 21.6%ÀÇ °ßÁ¶ÇÑ ¼ºÀå¼¼¸¦ º¸ÀÏ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. SiC MOSFET Ĩ ¹× ¸ðµâ ½ÃÀåÀ» À̲ô´Â ÁÖ¿ä ¿äÀÎÀ¸·Î´Â ¿¡³ÊÁö Àý°¨ ¹× ¼º´É Çâ»óÀ¸·Î ÀÎÇÑ ´Ù¾çÇÑ »ê¾÷ ºÐ¾ß¿¡¼ ¼ö¿ä Áõ°¡°¡ ²ÅÈ÷°í ÀÖÀ¸¸ç, ÀÌ·¯ÇÑ ¼ö¿ä Áõ°¡´Â SiC MOSFET Ĩ ¹× ¸ðµâ ½ÃÀåÀÇ ¼ºÀåÀ» ´õ¿í ÃËÁøÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ¼ºÀåÀ» ´õ¿í ÃËÁøÇϰí ÀÖ½À´Ï´Ù. Àü±âÀÚµ¿Â÷ÀÇ º¸±ÞÀÌ È®´ëµÇ¸é¼ ÀÚµ¿Â÷ Á¦Á¶¾÷üµéÀÌ º¸´Ù È¿À²ÀûÀÎ ÆÄ¿ö ÀÏ·ºÆ®·Î´Ð½º¸¦ ÅëÇØ Â÷·® ¼º´ÉÀ» °³¼±ÇÏ°í ¿îÀüÀÚÀÇ ÁÖÇà°Å¸®¸¦ ´Ã¸®·Á´Â ¼ö¿ä°¡ Áõ°¡Çϰí ÀÖ´Â °Íµµ ¼ºÀå¿¡ ¹ÚÂ÷¸¦ °¡Çϰí ÀÖ½À´Ï´Ù.
SiCÀÇ ±â¼ú ¹ßÀü°ú Á¦Á¶ ºñ¿ë Àý°¨Àº ½ÃÀå¿¡ Å« ±âȸ°¡ µÉ °ÍÀÔ´Ï´Ù. ½ÃÀå ÀáÀç·ÂÀÌ ³ôÀº ÁÖ¿ä Áö¿ªÀ¸·Î´Â ºÏ¹Ì, À¯·´, ¾Æ½Ã¾ÆÅÂÆò¾çÀÌ ÀÖ½À´Ï´Ù. ºÏ¹Ì: ¹Ì±¹Àº ÀÚµ¿Â÷ »ý»ê ¹× »ê¾÷ ºÎ¹®¿¡¼ °¡Àå Å« Á¸Àç°¨À» º¸À̰í ÀÖ½À´Ï´Ù. Áß±¹°ú ÀϺ»Àº Àü±âÀÚµ¿Â÷ µµÀÔ ´É·ÂÀÌ ³ô°í Àç»ý¿¡³ÊÁö ÀÎÇÁ¶ó¿¡ ÅõÀÚÇÏ´Â ÁÖ¿ä ±¹°¡·Î, ¾Æ½Ã¾ÆÅÂÆò¾ç ½ÃÀåÀ» ¼±µµÇϰí ÀÖ½À´Ï´Ù. ÇâÈÄ ¸î ³âµ¿¾È ÀÌ ½ÃÀåÀ» ¼±µµÇÏ´Â ÃÖÀü¼±¿¡ °è¼Ó ³²¾ÆÀÖÀ» °ÍÀ¸·Î º¸ÀÔ´Ï´Ù.
À¯Çüº°·Î º¸¸é, ½ÃÀåÀº SiC MOSFET Ĩ/µð¹ÙÀ̽º¿Í SiC MOSFET ¸ðµâ·Î ³ª´¹´Ï´Ù. ±× Áß SiC MOSFET ¸ðµâÀÌ °¡Àå Å« ºñÁßÀ» Â÷ÁöÇϰí ÀÖ½À´Ï´Ù. ´Ù¾çÇÑ ÀÀ¿ë ºÐ¾ß¿¡¼ ¿ ¼º´ÉÀÌ Çâ»óµÇ°í ½ºÀ§Äª ¼Õ½ÇÀÌ °¨¼ÒÇÔ¿¡ µû¶ó Àü±âÀÚµ¿Â÷(EV)¿¡ ÇÊ¿äÇÑ °íÈ¿À² ÆÄ¿öÀÏ·ºÆ®·Î´Ð½º¿¡ ´ëÇÑ ¼ö¿ä°¡ Áõ°¡ÇÏ¸é¼ SiC MOSFET ¸ðµâ ½ÃÀåÀÇ ¼ºÀåÀ» °ßÀÎÇϰí ÀÖ½À´Ï´Ù. ž籤 ¹× dz·Â ¹ßÀü µî Àç»ý ¿¡³ÊÁö ½Ã½ºÅÛÀ¸·ÎÀÇ ÀüȯÀÌ Áõ°¡ÇÔ¿¡ µû¶ó SiC MOSFET ¸ðµâÀÌ Áö¿øÇϴ ÷´Ü Àü·Â º¯È¯ ¼Ö·ç¼ÇÀÌ ¿ä±¸µÇ°í ÀÖ½À´Ï´Ù. »ê¾÷ ÀÀ¿ë ºÐ¾ß¿¡¼´Â SiC MOSFET ¸ðµâÀÇ ³ôÀº Àü·Â ¹Ðµµ¿Í ½Ã½ºÅÛ È¿À² °³¼± ±â´ÉÀÌ À¯¿ëÇÕ´Ï´Ù. ¶ÇÇÑ, ÀÌ»êÈź¼Ò ¹èÃâ·®À» ÁÙÀÌ°í ¾ö°ÝÇÑ ±ÔÁ¦ ±âÁØÀ» ÁؼöÇϱâ À§ÇØ ¿¡³ÊÁö È¿À²ÀÌ ³ôÀº ±â¼úÀ» ã´Â Àü ¼¼°èÀûÀÎ ¿òÁ÷ÀÓÀº ¼ö¿ä¸¦ °ÈÇÒ ¼ö ÀÖ½À´Ï´Ù. ½Ç¸®ÄÜ Ä«¹ÙÀÌµå ±â¼úÀÌ ºü¸£°Ô ¹ßÀüÇϰí Á¦Á¶ ºñ¿ëÀÌ °¨¼ÒÇÔ¿¡ µû¶ó ÀÌ·¯ÇÑ À¯ÇüÀÇ ¸ðµâÀ» ´õ ½±°Ô ÀÌ¿ëÇÒ ¼ö ÀÖ°Ô µÇ¾ú½À´Ï´Ù. ¿©·¯ ±â´ÉÀ» °áÇÕÇÒ ¼ö Àֱ⠶§¹®¿¡ ¼³°è ¹× Àüü ½Ã½ºÅÛÀÇ º¹À⼺ÀÌ ´Ü¼øÈµÇ¾î ´Ù¾çÇÑ ÀÀ¿ë ºÐ¾ß¿¡ ¸Å·ÂÀûÀÎ ¸ðµâÀÌ µÉ ¼ö ÀÖ½À´Ï´Ù.
ÀÀ¿ë ºÐ¾ßº°·Î SiC MOSFET Ĩ ¹× ¸ðµâ ½ÃÀåÀº ÀÚµ¿Â÷, »ê¾÷, PV ¹× ±âŸ·Î ³ª´µ¸ç, 2023³â °¡Àå ³ôÀº ¸ÅÃâÀ» ±â·ÏÇÑ ºÐ¾ß´Â ÀÚµ¿Â÷ ºÎ¹®ÀÔ´Ï´Ù. ÀÚµ¿Â÷´Â ÆÄ¿ö ÀÏ·ºÆ®·Î´Ð½º, ƯÈ÷ EV¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡ÀÇ ÁÖ¿ä ¿øµ¿·ÂÀ̸ç, SiC MOSFET ½ÃÀåÀº ¹èÅ͸® ¼ö¸í°ú ÁÖÇà°Å¸®¸¦ ¿¬ÀåÇϱâ À§ÇØ º¸´Ù È¿À²ÀûÀÎ Àü·Â ÀιöÅÍ¿¡ ÀÇÁ¸Çϰí ÀÖÀ¸¸ç, SiC MOSFETÀº ±âÁ¸ ½Ç¸®ÄÜ ºÎǰ¿¡ ºñÇØ Àü·Â ¼Õ½ÇÀÌ ¸Å¿ì Àû´Ù, ½ºÀ§Äª ¼Óµµ°¡ ºü¸£±â ¶§¹®¿¡ EV ½Ã½ºÅÛ¿¡ »ç¿ëÇϱ⿡ ÀûÇÕÇÕ´Ï´Ù. ÀÌ·¯ÇÑ Ãß¼¼´Â SiC MOSFET¿¡ ´ëÇÑ ¼ö¿ä°¡ Áõ°¡Çϰí ÀÖ´Â ¹è°æ¿¡´Â ź¼Ò ¹èÃâ¿¡ ´ëÇÑ ¾ö°ÝÇÑ ±Ô¹ü°ú ȯ°æ ±ÔÁ¦, SiC ±â¼úÀÇ ¹ßÀü°ú ºñ¿ë Àý°¨°ú ÇÔ²² »ç¿ë °¡´ÉÇÑ ±â´ÉÀÇ ¼ö°¡ Áõ°¡ÇÔ¿¡ µû¶ó ÀÚµ¿Â÷ Á¦Á¶¾÷ü¿¡°Ô SiC MOSFETÀº ¸Å·ÂÀûÀÎ ¼±ÅÃÀÌ µÇ°í ÀÖ½À´Ï´Ù. SiC MOSFETÀº ÀÚµ¿Â÷ Á¦Á¶¾÷ü¿¡°Ô ¸Å·ÂÀûÀÎ ½Ã½ºÅÛÀÔ´Ï´Ù. µÑ°, Àü ¼¼°èÀûÀ¸·Î Áö¼Ó °¡´ÉÇÑ Àç»ý °¡´É ¿¡³ÊÁö¿øÀ» ÇâÇÑ ¿òÁ÷ÀÓÀÌ EVÀÇ ¿î¸íÀ» ÃËÁøÇϰí ÀÖ½À´Ï´Ù.
SiC MOSFET Ĩ ¸ðµâ »ê¾÷ ½ÃÀå º¸±ÞÀ» ´õ Àß ÀÌÇØÇϱâ À§ÇØ ½ÃÀåÀº ºÏ¹Ì(¹Ì±¹, ij³ª´Ù, ±âŸ ºÏ¹Ì), À¯·´(µ¶ÀÏ, ¿µ±¹, ÇÁ¶û½º, ½ºÆäÀÎ, ÀÌÅ»¸®¾Æ, ±âŸ À¯·´), ¾Æ½Ã¾ÆÅÂÆò¾ç(Áß±¹, ÀϺ», Àεµ, È£ÁÖ, ±âŸ ¾Æ½Ã¾ÆÅÂÆò¾ç) ¹× ±âŸ Áö¿ªÀÇ ¼¼°è Á¸À縦 ±â¹ÝÀ¸·Î ºÐ¼®µÇ¾ú½À´Ï´Ù. ¾Æ½Ã¾ÆÅÂÆò¾ç(Áß±¹, ÀϺ», Àεµ, È£ÁÖ, ±âŸ ¾Æ½Ã¾ÆÅÂÆò¾ç) ¹× ±âŸ Áö¿ªÀÇ ¼¼°è Á¸À縦 ±â¹ÝÀ¸·Î ºÐ¼®µÇ¾úÀ¸¸ç, 2023³â SiC MOSFET Ĩ ¹× ¸ðµâ ½ÃÀå¿¡¼ APACÀÌ Å« Á¡À¯À²À» Â÷ÁöÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ±Þ¼ÓÇÑ »ê¾÷È¿Í µµ½ÃÈ·Î ÀÎÇØ APAC´Â SiC MOSFET ½ÃÀåÀÇ ¸®´õ°¡ µÇ¾ú½À´Ï´Ù. Áö¿ª Â÷¿ø¿¡¼ ¾Æ½Ã¾ÆÅÂÆò¾ç(APAC)Àº ºü¸¥ »ê¾÷ ¼ºÀå·ü, ±Þ¼ÓÇÑ Àα¸ Áõ°¡, Àü±âÀÚµ¿Â÷(EV) äÅà Áõ°¡·Î ÀÎÇØ °¡Àå µÎµå·¯Áø Áö¿ª Áß Çϳª·Î Àνĵǰí ÀÖ½À´Ï´Ù. ÀÌ ½ÃÀåÀ» µ¶Á¡Çϰí ÀÖ´Â ±¹°¡´Â Áß±¹, ÀϺ», Àεµ µîÀ̸ç, ÀÌµé ±¹°¡´Â źźÇÑ Àç»ý ¿¡³ÊÁö ºÎ¹®°ú ´õºÒ¾î ¼º¼÷ÇÑ ÀÚµ¿Â÷ ±â¹ÝÀ» º¸À¯Çϰí ÀÖ½À´Ï´Ù. Å« ±â¾÷ÀÎ Áß±¹Àº Àü±âÂ÷ »ý»ê°ú ÀÎÇÁ¶ó¿¡ ¸¹Àº ÅõÀÚ¸¦ Çϰí ÀÖ½À´Ï´Ù. ÀϺ»ÀÇ ÀüÀÚ»ê¾÷ ¹ßÀü Áö¿ø°ú Çѱ¹ÀÇ ¹ÝµµÃ¼ ±â¼ú Çõ½Åµµ Å« ½ÃÀå Àμ¾Æ¼ºê°¡ µÇ°í ÀÖ½À´Ï´Ù. ´Ù¾çÇÑ Àç»ý ¿¡³ÊÁö ÇÁ·ÎÁ§Æ®ÀÇ È®´ë, Àü·Â º¯È¯ ºñÀ²À» °³¼±ÇÑ ÆÄ¿ö ÀÏ·ºÆ®·Î´Ð½º¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡, EV äÅÃÀ» ÃËÁøÇϱâ À§ÇÑ ¼ö¸¹Àº Á¤ºÎ Ä·ÆäÀÎÀº APAC ½ÃÀå ¼ºÀåÀ» µÞ¹ÞħÇÏ´Â ÁÖ¿ä ¿äÀÎÀÔ´Ï´Ù. µ¿¾Æ½Ã¾Æ¿¡¼´Â ¹ÝµµÃ¼ ½ÃÀåÀÌ ºü¸£°Ô ¼ºÀåÇϰí ÀÖÀ¸¸ç, źźÇÑ Á¦Á¶°ÅÁ¡°ú ´Ù¾çÇÑ ±â¼ú ¹ßÀüÀÌ ÀζóÀÎ °èÃø ½Ã½ºÅÛÀÇ ¼ºÀåÀ» µÞ¹ÞħÇϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ, À¯¸®ÇÑ Á¤ºÎ Á¤Ã¥, ģȯ°æ ±â¼ú ¹× Àç»ý °¡´É ¿¡³ÊÁö ÁöħÀº SiC MOSFETÀÇ ¼ºÀåÀ» °¡¼ÓÇϰí ÀÖÀ¸¸ç, APACÀÇ ÁÖ¿ä ±â¾÷µéÀÇ R&D ÅõÀÚ´Â APAC ÀüüÀÇ ±â¼ú Çõ½Å°ú ½ÃÀå ¼ºÀåÀÇ ¿øµ¿·ÂÀÌ µÇ°í ÀÖ½À´Ï´Ù.
ÀÌ ½ÃÀå¿¡¼ Ȱµ¿ÇÏ´Â ÁÖ¿ä ±â¾÷À¸·Î´Â Wolfspeed, Infineon Technologies, STMicroelectronics, ROHM, Semiconductor Components Industries, LLC, Littelfuse, Microchip, Mitsubishi Electric, GeneSiC Semiconductor Inc. Microchip, Mitsubishi Electric, GeneSiC Semiconductor Inc. µîÀÌ ÀÖ½À´Ï´Ù.
Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are semiconductor devices that offer both good characteristics like high performance and can be utilized in power switching purposes over a wide range of frequencies compared to the related silicon types. For electric vehicles, SiC MOSFETs enable more efficient operation for extended mileage between charges and longer battery life, while in renewable energy systems, the use of SiC improves solar inverter and wind turbine efficiency.
The SiC MOSFET Chips and Module Market is expected to grow at a robust CAGR of 21.6% during the forecast period, on account of growing demand for energy-efficient solutions, increasing adoption of electric vehicles (EVs), expansion in renewable electricity generation projects as part of green initiatives led by governments across regions/prominent countries, and stringent government regulations promoting energy efficiency and carbon emission reduction. Key factors driving the SiC MOSFET Chips and Modules market include the strong demand in a wide range of industries due to their substantial energy savings and performance benefits, further fueling the growth. Rising global penetration of electric vehicles worldwide is another factor that spurs demand increases by car manufacturers to improve vehicle performance and extend driver range via more efficient power electronics.
Technological advancements in SiC and reduced manufacturing costs will serve sizeable opportunities for the market. Some of the key regions identified as having high market potential are North America, Europe, and Asia-Pacific. North America: The U.S. has the largest presence, with its car production and industrial sectors. China and Japan are the major countries with high electric vehicle adoption capacities as well as investments in renewable energy infrastructure, leading markets in the Asia-Pacific region. They are likely to remain at the forefront of leading this market over the next few years.
Based on Type, the market is categorized into Sic MOSFET Chip and Device and Sic MOSFET Module. Among these, the SiC MOSFET Module has a significant market share. The improved thermal performance and reduced switching losses over a wide range of different applications have been driving the demand for high-efficiency power electronics required within electric vehicles (EVs) to a greater extent, fueling SiC MOSFET Module Market growth. The increasing inclination toward renewable energy systems, including solar and wind power, requires sophisticated power conversion solutions that are met by SiC MOSFET Modules. In industrial use cases, the high-power density and system efficiency-improving capabilities of these modules are beneficial. Demand may also be reinforced by the global push for energy-efficient technologies to lower carbon emissions and comply with stringent regulatory standards. Because Silicon Carbide technology is advancing so fast and manufacturing costs are dropping, these kinds of modules are becoming more available. Their capability to combine several functions simplifies design and overall system complexity, making them attractive for different applications.
Based on Application, the SiC MOSFET Chips and Module market is divided into Car, Industrial, Photovoltaic (PV), and Others. The car segment registered the highest revenue during the year 2023. Vehicles are the main driver for the expanding need for power electronics, especially in EVs, which depend on more efficient power inverters to extend battery life and driving range in the SiC MOSFET market. As these lose much less power and switch faster than conventional silicon components, they are perfect for use in EV systems. This trend is driven by the increasing demand for SiC MOSFETs, as stringent norms related to carbon emissions and environmental regulations pushing for the mass adoption of EVs are propelling this growth. The growing number of features available, combined with greater SiC technology advances and declining costs, make these systems more appealing to carmakers. Secondly, on a global scale, the move towards sustainable and renewable energy sources is boosting EV's fortune as well.
For a better understanding of the market adoption of the SiC MOSFET Chips and Module industry, the market is analyzed based on its worldwide presence in countries such as North America (U.S.A., Canada, and Rest of North America), Europe (Germany, United Kingdom, France, Spain, Italy, and Rest of Europe), Asia-Pacific (China, Japan, India, Australia, and Rest of Asia-Pacific), Rest of World. APAC captured a significant share of the SiC MOSFET Chips and Module market in 2023. Fast-paced industrialization and urbanization make APAC a leader in the SiC MOSFET market. On a regional level, Asia-Pacific (APAC) has been identified as one of the most prominent regions due to its fast industrial growth rate, rapid population expansion, and growing adoption of electric vehicles (EVs). The market is dominated by countries such as China, Japan, and India, which have a mature automotive base in addition to robust renewable energy sectors. One big player, China, has invested heavily in EV production and infrastructure. Support for Japanese electronics industry development and South Korea's semiconductor technology innovation are also significant market incentives. The expansion of various renewable energy projects, the growing need for power electronics with improved power conversion ratios, and numerous government campaigns to promote EV adoption are key factors supporting market growth in APAC. The rapidly growing semiconductor market in East Asia and the robust manufacturing base, along with a wide range of technological advancements, support growth for inline metrology systems. Additionally, favorable government policies and green technology and renewable energy mandates fuel the growth of SiC MOSFETs. Investments in research and development made by major APAC players are driving innovation and market growth across APAC, given their competitive landscape.
Some of the major players operating in the market include Wolfspeed, Infineon Technologies, STMicroelectronics, ROHM, Semiconductor Components Industries, LLC, Littelfuse, Microchip, Mitsubishi Electric, GeneSiC Semiconductor Inc., and Shenzhen BASiC Semiconductor LTD.