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차세대 파워 반도체 : 시장, 재료, 기술

Power Semiconductors: Markets, Materials and Technologies

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발행일 2021년 03월 상품 코드 223488
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차세대 파워 반도체 : 시장, 재료, 기술 Power Semiconductors: Markets, Materials and Technologies
발행일 : 2021년 03월 페이지 정보 : 영문

본 상품은 영문 자료로 한글과 영문목차에 불일치하는 내용이 있을 경우 영문을 우선합니다. 정확한 검토를 위해 영문목차를 참고해주시기 바랍니다.

실리콘을 기반으로 한 기존의 파워 반도체가 이론상 한계에 가까워지고 있는 가운데, 우수한 재료 특성과 와이드 밴드갭(wide-bandgap)을 보유한 탄화규소(SiC) 및 질화갈륨(GaN) 기반 파워 반도체가 차세대 파워 디바이스로서 큰 기대를 모으고 있으며, 그 중에서도 IGBT와 파워 MOSFET는 시장 성장의 원동력이 될 것으로 보입니다. 파워 반도체 시장규모는 연평균 성장률 3.7%로, 2011년 142억 달러에서 2013년에는 167억 달러에 달할 전망입니다. 또한 차세대 파워 반도체 시장이 크게 성장함에 따라 가공 설비 업계에도 혜택이 미칠 것으로 예상되며, 특히 실리콘 기판상에서의 GaN 에피택시 성장 프로세스 관련 기기 제조업체와 플립 칩 업계용 설비 제조업체의 호실적이 전망됩니다.

차세대 파워 반도체(Power Semiconductors) 시장에 대해 재생에너지 및 전기자동차 대상 용도와 반도체 시장의 지위, 향후 성장 분야 등을 상세히 분석하고, SiC 및 GaN을 사용한 차세대 반도체 제조 기술과 향후 과제, 주요 기업 개요 등을 함께 전해드립니다.

제1장 서론

  • 차별화 요인은 제조 공정
  • 기존 MOS 디바이스와 다른 적층 구조 디바이스
  • 슈퍼 접합 프로세스(Super Junction Processes)

제2장 파워 반도체의 용도

  • 재생에너지 분야의 파워 반도체
    • 태양에너지발전
    • 풍력발전
  • 하이브리드자동차 및 전기자동차 분야의 파워 반도체
    • 자동차 업계의 메가트렌드
    • 와이드 밴드갭 디바이스
  • LED 조명 분야의 파워 반도체
  • 산업용 모터 구동장치 분야의 파워 반도체
  • 스마트홈 시장의 파워 반도체
  • GaN 및 SiC의 최종용도용 시장 예측

제3장 시장 분석

  • 반도체 시장의 파워 반도체 지위
  • IGBT와 파워 MOSFET의 잠재적인 성장성
  • 최종용도 시장
  • 와이드 밴드갭 파워 반도체 시장

제4장 차세대 파워 반도체

  • 실리콘의 제약 극복에 대한 기대감
  • 차세대 기판으로서의 SiC와 GaN에 대한 기대감
  • 와이드 밴드갭 반도체의 이점
  • SiC와 GaN 비교
    • 재료 특성
    • 재료 품질
    • SiC 횡형 소자
    • SiC 종형 소자
    • GaN 종형 소자
  • SiC 디바이스 제조
    • SiC의 벌크 단결정 성장과 에피택시얼 성장(Epitaxial Growth)
    • 표면처리
    • 에칭
    • 리소그래피
    • 이온주입
    • 표면안정화
    • 금속화
  • GaN 디바이스 제조
    • GaN의 과제
      • 가격
      • 신뢰성
      • 컴포넌트 패키징과 열신뢰성
      • 관리
      • 디바이스 모델링
    • 패키징

제5장 주요 기업 개요

  • 파워 반도체 제조업체
    • Infineon
    • Mitsubishi Electric
    • Toshiba
    • STMicroelectronics
    • Vishay
    • International Rectifier
    • Fairchild
    • Fuji Electric
    • Renesas
    • Semikron
    • NXP Semiconductors
  • SiC 웨이퍼 관련 기업
  • GaN 웨이퍼 관련 기업
  • 차세대 파워 반도체 개발을 추진하는 기업 개요
    • Mitsubishi Electric
    • Fuji Electric Holdings
    • Toshiba
    • Rohm
    • Sanken Electric
    • Shindengen Electric
    • Infineon
    • Microsemi
    • Cree
    • GeneSiC Semiconductor
    • Semisouth Laboratories
    • United Silicon Carbide
    • MicroGaN
    • Powerex
    • Fairchild
    • International Rectifier
    • Nitronix

도표

KSM 11.12.07

LIST OF FIGURES

  • 1.1. Evolution Of IGBT Chip Structure
  • 1.2. Effects Of Miniaturization Of IGBT Chip
  • 1.3. SiC Trench-Type MOSFET And Resistance Reduction As Compared With DMOSFET
  • 1.4. Planar And Vertical (Trench) MOSFET
  • 1.5. Schematic Of A FinFET
  • 1.6. Schematic Of A MOSFET And Super Junction MOSFET
  • 1.7. SiC U MOSFET
  • 2.1. Forecast Of Solar Power
  • 2.2. Full Bridge IGBT Topology
  • 2.3. Block Diagram Of Microcontroller-Based Inverter
  • 2.4. Worldwide Wind Turbine Shipments
  • 2.5. Top Wind Power Capacity by Country
  • 2.6. Bill Of Materials For A Typical 30-50kw Inverter
  • 2.7. A Simple Diagram Of A HEV Traction Drive System.
  • 2.8. A More Complex Diagram Of PEEM In A Plug-In Hybrid Electric Vehicle (PHEV)
  • 2.9. Conducting And Switching Loses For Inverter
  • 2.10. Unit Pricing Trends In Power Semiconductors
  • 2.11. System And Component Costs For Wide Bandgap Semiconductors
  • 2.12. Vertical And Lateral HEMT
  • 2.13. GaN Lateral And GaN Vertical HEMTs In EVs
  • 2.14. Market Drivers For LED Biz And Applications
  • 2.15. SSL Vs. Classical Technologies
  • 2.16. LED Performance Vs. Traditional Light Sources
  • 2.17. Energy Production And Use Comparison
  • 2.18. Typical LED Drive Circuit
  • 2.19. Integration Of LED And LED Driver Using TSV
  • 2.20. Simple Power MOSFET Motor Controller
  • 2.21. Basic Operating Principle Of Inverter
  • 2.22. System Block Diagram Of An Air Conditioner
  • 3.1. Mitsubishi's IGBT (Insulated Gate Bipolar Transistor) Generations
  • 3.2. Infineon's MOSFET Generations
  • 3.3. Intel's FinFET Design
  • 3.4. Fuji's MOSFET versus Super Junction MOSFET
  • 3.5. NEC's GaN-on-Si Power Transistor
  • 3.6. Fujitsu's GaN-on-SiC HEMT Transistor
  • 3.7. Power Semiconductor Market Forecast
  • 3.8. Power Semiconductor Market Shares
  • 3.9. Market Forecast For Super Junction MOSFET
  • 3.10. SJ MOSFETs as an Interim Solution
  • 3.11. Global IGBT Shares By Application
  • 3.12. China IGBT Shares By Application
  • 3.13. Global And China Automotive IGBT Forecast
  • 3.14. Global And China Power Generation IGBT Forecast
  • 3.15. Global And China Consumer IGBT Forecast
  • 3.16. Global And China Industrial IGBT Forecast
  • 3.17. Global And China Industrial IGBT Forecast
  • 3.18. Global And China EV Charging IGBT Forecast
  • 3.19. Global IGBT Module Market Shares
  • 3.20. Global IGBT Discrete Market Shares
  • 3.21. Global MOSFET Shares By Application
  • 3.22. China MOSFET Shares By Application
  • 3.23. Global And China Automotive MOSFET Forecast
  • 3.24. Global And China EV Charging MOSFET Forecast
  • 3.25. Global And China Industrial MOSFET Forecast
  • 3.26. Global And China Consumer MOSFET Forecast
  • 3.27. Global And China Telecom MOSFET Forecast
  • 3.28. Global And China Telecom MOSFET Forecast
  • 3.29. MOSFET Market Shares
  • 3.30. Power Demands For ICE And EV
  • 3.31. 5G Demand for Power Semiconductors
  • 3.32. Forecast of Wide Bandgap Semiconductor Market
  • 4.1. Silicon-Based Devices Reaching Maturity
  • 4.2. Enhancement Mode GaN On Si Transistor
  • 4.3. AlGaN/GaN HEMT, GaN MOSFET, MOS-HEMT
  • 4.4. GaN HEMT Material Structure On Si Substrate
  • 4.5. Power Package Integration Roadmap

LIST OF TABLES

  • 2.1. Product Families And The Principal End Uses Of Power Products
  • 2.2. Forecast Of On-Grid Inverters By Type
  • 2.3. EV Shipment Forecast
  • 2.4. Advantages And Disadvantages Of GaN Lateral HEMTs
  • 2.5. Light Source Comparison
  • 2.6. Forecast Of GaN And SiC Power Devices By End Applications
  • 3.1. Power Semiconductor Forecast for Electric Vehicles
  • 3.2. 5G Semiconductor Total Available Market Forecast
  • 4.1. Physical Properties Of Select Semiconductor Materials
  • 4.2. Wide Bandgap Material Properties
  • 4.3. Lattice Constant And CTE Of Semiconductor Starting Material
  • 4.4. GaN FET Vs Si MOSFET Characteristics
  • 4.5. Standard Chemical Solution For Surface Preparation Of SiC Substrates
  • 4.6. Interface Trap Densities For 4H-SiC Under Different Process Conditions

A power semiconductor device is used as a switch (controlling power on or off) or rectifier (converting AC to DC) in power electronics, for example, in frequency conversion home appliance, EVs, EV chargers, welding inverter, industrial robots, etc. As of 2019, Power semiconductors was a US$41bn global market, or c.10% of global semiconductor market size.

Power semiconductors could be divided into two parts: (1) Power discrete and (2) Power IC, with each parts roughly contributing 50% of the power semiconductors market size by revenue. When a power semiconductor device is in the form of integrated circuit, it is called Power IC, otherwise referred to as a power discrete.

Power semiconductors is a US$41bn market globally, and within this market, we are positive on IGBTs and MOSFETs, given the growing market driven by (1) rising energy efficiency requirement in multiple applications such as EV, industrial control, and home appliances, and (2) the rising demand for Chinese suppliers driven by a large domestic market and multiple Chinese brands in home appliances, automobiles and industrial look to diversify their supply chains amid growing trade tensions.

The global IGBT leaders usually cover a full range of applications from consumer electronics, automotive, and industrial controls, to power generation, infrastructure, and railway. Each of these sectors is analyzed in the report.

The global MOSFET leaders usually cover the full range of applications from consumer electronics, automotive, computing, motor driver, power supply, telecom network, EV charging, LED lighting, to medical. Each of these sectors is analyzed in the report.

The rapid growth of the power semiconductor market in recent years has been driven by the proliferation of computer and consumer electronics, such as desktop computers, notebooks, netbooks, smartphones, flat panel displays and portable media players that require sophisticated power management to improve power efficiency and extend battery life.

This report analyzes and forecasts the worldwide markets of power semiconductors by type, geographic region and application. The market by substrate type also focuses on new SiC and GaN materials and fabrication.

Table of Contents

Chapter 1. Introduction

  • 1.1. Manufacturing Processes Are Differentiation Factors
  • 1.2. Vertical Structure Devices Differ From Usual MOS Planar Structure
  • 1.3. Super Junction Processes
  • 1.4. GaN and SiC Semiconductors

Chapter 2. Applications of Power Semiconductors

  • 2.1. Power Semiconductors in Renewable Energy
    • 2.1.1. Solar
    • 2.1.2. Wind
  • 2.2. Power Semiconductors in Hybrid & Electric Vehicles
    • 2.2.1. Automotive Megatrends
    • 2.2.2. Wide Bandgap Devices for HEVs/EVs
  • 2.3. Power Semiconductors in LED Lighting
  • 2.4. Power Semiconductors in Industrial Motor Drives
  • 2.5. Power Semiconductors in Smart Home Market
  • 2.6. GaN and SiC Market Forecast For End Applications

Chapter 3. Market Analysis

  • 3.1. Position of Power Semiconductors in Semiconductor Market
  • 3.2. Growth Potential of IGBTs and Power MOSFETs
  • 3.3. IGBT Market
    • 3.3.1. IGBT Technology Trends
    • 3.3.2. IGBT TAM
    • 3.3.3. IGBT Market Growth By Applications
      • 3.3.3.1 Automotive
      • 3.3.3.2 Power Generation And Grid
      • 3.3.3.3 Consumer Electronics
      • 3.3.3.4 Industrial Controls
      • 3.3.3.5 Railway/Train
      • 3.3.3.6 EV Charging Systems
    • 3.3.4 IGBT Competitive Landscape
      • 3.3.4.1 Global And China Market Share
      • 3.3.4.2 IGBT Business Model
      • 3.3.4.3 Technology Gap Between China And Global Players
  • 3.4. MOSFET TAM
    • 3.4.1. MOSFET TAM Methodology
    • 3.4.2. MOSFET Market Growth By Applications
      • 3.4.2.1 Automotive
      • 3.4.2.2 EV Charging
      • 3.4.2.3 Industrial And Medical
      • 3.4.2.4 Consumer
      • 3.4.2.5 Telecom Network
      • 3.4.3.6 Computing
    • 3.4.4. MOSFET Competitive Landscape
      • 3.4.4.1 Global And China Market Share
      • 3.4.4.2 China Suppliers' Technology/Product Gaps Vs Global Peers
  • 3.5. Emerging End Application Markets
    • 3.5.1. Electric Vehicles
    • 3.5.2. 5G Infrastructure
  • 3.4. Wide Bandgap Power Semiconductor Market

Chapter 4. Next-Generation Power Semiconductors

  • 4.1. Expectations for Overcoming Silicon's Limitations
  • 4.2. Expectations Of SiC and GaN as Next-Generation Substrates
  • 4.3. Benefits of Wide Band Gap Semiconductors
  • 4.4. SiC versus GaN
    • 4.4.1. Material Properties
    • 4.4.2. Material Quality
    • 4.4.3. SiC Lateral Devices:
    • 4.4.4. SiC Vertical Devices
    • 4.4.5. GaN Lateral Devices
  • 4.5. Fabrication of SiC devices
    • 4.5.1. Bulk and Epitaxial Growth of SiC
      • 4.5.1.1 Bulk Growth
      • 4.5.1.2 Epitaxial Growth
      • 4.5.1.3 Defects
    • 4.5.2. Surface Preparation
    • 4.5.3. Etching
    • 4.5.4. Lithography
    • 4.5.5. Ion Implantation
    • 4.5.6. Surface Passivation
    • 4.5.7. Metallization
  • 4.6. Fabrication of GaN devices
    • 4.6.1. GaN Challenges
      • 4.6.1.1 Costs
      • 4.6.1.2 Reliability
      • 4.6.1.3 Component Packaging and Thermal Reliability
      • 4.6.1.4 Control
      • 4.6.1.5 Device Modeling
  • 4.7. Packaging

Chapter 5. Company Profiles

  • 5.1. Power Semiconductor Companies
    • 5.1.1. Infineon
    • 5.1.2. Mitsubishi
    • 5.1.3. Toshiba
    • 5.1.4. STMicroelectronics
    • 5.1.5. Vishay
    • 5.1.6. Fuji Electric
    • 5.1.7. Renesas
    • 5.1.8. Semikron
    • 5.1.9. NXP Semiconductors
    • 5.1.10. Hitachi Power Semiconductor Device
    • 5.1.11. X-Rel Semiconductor
    • 5.1.12. Advanced Linear Devices
    • 5.1.13 Nexperia
    • 5.1.14. Rohm
    • 5.1.15. Sanken Electric
    • 5.1.16. Shindengen Electric
    • 5.1.17. Microchip Technology
    • 5.1.18. GeneSiC Semiconductor
    • 5.1.19. Semisouth Laboratories
    • 5.1.20. United Silicon Carbide
    • 5.1.21. MicroGaN
    • 5.1.22. Powerex
    • 5.1.23. Nitronix
    • 5.1.24. Transform
    • 5.1.25. Allegro Microsystems
    • 5.1.26. GaN Systems
    • 5.1.27 Navitas Semiconductor
    • 5.1.28. Alpha and Omega Semiconductor
    • 5.1.29. ON Semiconductor
    • 5.1.30. Jilin Sino-Microelectronics
    • 5.1.31. BYD Microelectronics
    • 5.1.32. Yangzhou Yangjie Electronic Technology
    • 5.1.33. StarPower
    • 5.1.34. Sino Micro
    • 5.1.35. Yangjie
    • 5.1.36. Jiejie
    • 5.1.37. GoodArk
    • 5.1.38. NCE Power
  • 5.2. SiC Wafer-Related Companies
  • 5.3. GaN Wafer-Related Companies
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