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¼¼°èÀÇ °íÀü¾Ð MOSFET ½ÃÀå º¸°í¼ : Á¦Ç° À¯Çü, ¿ëµµ, Áö¿ªº°(2024-2032³â)High Voltage MOSFET Market Report by Product Type (Junction Tube, Insulated Gate, and Others), Application (Consumer Electronics, Automotive Electronics, Power Systems, and Others), and Region 2024-2032 |
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»ê¾÷ ÀÚµ¿È Áõ°¡¿Í ¿¡³ÊÁö È¿À²ÀûÀÎ Àü±â ½Ã½ºÅÛ¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡´Â ½ÃÀå¿¡ ±àÁ¤ÀûÀÎ ¿µÇâÀ» ¹ÌÄ¡´Â ÁÖ¿ä ¿äÀÎÀ̵Ǿú½À´Ï´Ù. °Ô´Ù°¡ ÀÚµ¿Â÷¿ë ÀüÀÚºÎǰÀÇ Á¦Á¶¿¡ ³Î¸® ä¿ëµÇ°í ÀÖ´Â °Íµµ ½ÃÀåÀÇ ¼ºÀåÀ» µÞ¹ÞħÇϰí ÀÖ½À´Ï´Ù. ÀÌ MOSFETÀº ¹æ¿°ú ¹ÝµµÃ¼ ¸ðµâÀÇ Å©±â¸¦ ÁÙÀ̰í ÀÚµ¿Â÷ ¿¬ºñ¸¦ °³¼±Çϱâ À§ÇØ ÇÏÀ̺긮µå ÀÚµ¿Â÷ ¹× Àü±âÀÚµ¿Â÷(H/EV)¿¡ ³Î¸® »ç¿ëµË´Ï´Ù. ÀÌ¿¡ µû¶ó °íÀü¾Ð MOSFETÀº ž籤 ¹ßÀü ¹× dz·Â¹ßÀü ÆÐ³Î¿¡¼ Áö¼Ó°¡´ÉÇÑ ¿¡³ÊÁöÀÇ »ý¼º°ú ºÐ¹è¿¡µµ ÀÌ¿ëµÇ°í ÀÖ½À´Ï´Ù. ¶ÇÇÑ ¿¬°áµÈ ÀåÄ¡ÀÇ IoT(»ç¹°ÀÎÅͳÝ) ¹× Ŭ¶ó¿ìµå ÄÄÇ»ÆÃ ¼Ö·ç¼Ç°úÀÇ ÅëÇÕ µî ´Ù¾çÇÑ ±â¼úÀû Áøº¸°¡ ´Ù¸¥ ¼ºÀå ÃËÁø¿äÀÎÀ¸·Î ÀÛ¿ëÇϰí ÀÖ½À´Ï´Ù. ÀÌ·Î ÀÎÇØ Àüµµ ¼Õ½ÇÀ» ÃÖ¼ÒÈÇÏ°í °æºÎÇÏ ½Ã ¿ÍÆ® ¼Õ½ÇÀ» ¾ïÁ¦ÇÏ¸ç ¿ªÈ¸º¹À» °³¼±ÇÑ MOSFET¿¡ ´ëÇÑ ¿ä±¸°¡ ³ô¾ÆÁö°í ÀÖ½À´Ï´Ù. ±× ¹ÛÀÇ ¿äÀÎÀ¸·Î´Â Àç»ý°¡´É¿¡³ÊÁö ÀÚ¿øº° Àü¿øÀÇ ÀÌ¿ëÀÌ Áõ°¡Çϰí ÀÖÀ¸¸ç, ±¤¹üÀ§ÇÑ ¿¬±¸°³¹ß(R&D) Ȱµ¿ µîÀÌ ÀÖ¾î ½ÃÀåÀ» ´õ¿í °ßÀÎÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
The global high voltage MOSFET market size reached US$ 4.5 Billion in 2023. Looking forward, IMARC Group expects the market to reach US$ 7.4 Billion by 2032, exhibiting a growth rate (CAGR) of 5.5% during 2024-2032.
High voltage metal-oxide semiconductor field-effect transistors (MOSFETs) refer to a kind of super junction MOSFET that operates at higher voltages. It consists of various silicon-based semiconductor components used for switching or amplifying electronic signals and three insulated terminals, namely source, gate and drain, for voltage conversion. In comparison to the traditionally used MOSFETs, these variants offer various benefits, such as minimal gate-oxide leakage, high power density and enhanced output resistance. As a result, it finds extensive applications across various industries, such as industrial power, electronics and automotive.
Increasing industrial automation and the growing demand for electrical systems with high energy efficiencies, represent as the key factors creating a positive impact on the market. Furthermore, the widespread product adoption for manufacturing automobile electronic components is also driving the market growth. These MOSFETs are extensively used in hybrid and electronic vehicles (H/EVs) to reduce heat dissipation and semiconductor module size, and an improved fuel efficiency of the vehicle. In line with this, high-voltage MOSFETs are also utilized for generating and distributing sustainable energy from solar and wind energy panels. Additionally, various technological advancements, such as the integration of connected devices with the internet-of-things (IoT) and cloud computing solutions, are acting as other growth-inducing factors. This has increased the requirement for MOSFETs with minimal conduction loss, suppressed watt loss under light loads and improved reverse recovery. Other factors, including the increasing utilization of renewable energy resource-based power supplies, along with extensive research and development (R&D) activities, are anticipated to drive the market further.
IMARC Group provides an analysis of the key trends in each segment of the global high voltage MOSFET market report, along with forecasts at the global, regional and country levels from 2024-2032. Our report has categorized the market based on product type and application.
Junction Tube
Insulated Gate
Others
Consumer Electronics
Automotive Electronics
Power Systems
Others
North America
United States
Canada
Asia Pacific
China
Japan
India
South Korea
Australia
Indonesia
Others
Europe
Germany
France
United Kingdom
Italy
Spain
Russia
Others
Latin America
Brazil
Mexico
Others
Middle East and Africa
The report has also analysed the competitive landscape of the market with some of the key players being Alpha and Omega Semiconductor Limited, Diodes Incorporated, Infineon Technologies AG, NXP Semiconductors N.V., ON Semiconductor Corporation, Renesas Electronics Corporation, Rohm Co. Ltd., STMicroelectronics N.V., Toshiba Corporation and Vishay Intertechnology Inc.