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ÀÚ±â ÀúÇ× RAM ½ÃÀå º¸°í¼ : À¯Çüº°, ¿ëµµº°, Áö¿ªº°(2024-2032³â)Magneto Resistive RAM Market Report by Type (Toggle MRAM, Spin-Transfer Torque MRAM ), Offering, Application, and Region 2024-2032 |
2023³â ¼¼°è ÀÚ±â ÀúÇ× RAM(MRAM) ½ÃÀå ±Ô¸ð´Â 6¾ï 1,720¸¸ ´Þ·¯¿¡ ´ÞÇß½À´Ï´Ù. ÇâÈÄ IMARC GroupÀº 2032³â±îÁö ½ÃÀå ±Ô¸ð°¡ 110¾ï 7,630¸¸ ´Þ·¯¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹»óÇϸç, 2024-2032³â ¿¬Æò±Õ ¼ºÀå·ü(CAGR)Àº 37.1%¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹ÃøÇß½À´Ï´Ù.
ÀÚ±â ÀúÇ× ·£´ý ¾×¼¼½º ¸Þ¸ð¸®(MRAM) ¶Ç´Â ÀÚ±â RAMÀº Á¤º¸¸¦ ÀúÀåÇϱâ À§ÇØ ÀÚ±â ÀüÇϸ¦ »ç¿ëÇÏ´Â ºñÈֹ߼º ¸Þ¸ð¸®ÀÔ´Ï´Ù. ½ºÇÉ Àü¼Û ÅäÅ© MRAM ¶Ç´Â Åä±Û MRAMÀº ÀϹÝÀûÀ¸·Î »ç¿ë °¡´ÉÇÑ À¯Çü Áß ÀϺÎÀÔ´Ï´Ù. À̵éÀº À¯Àüü ¶Ç´Â Àý¿¬ÃþÀ» ÅëÇØ ºÐ¸®µÈ µÎ °³ÀÇ ÀÚ¼ºÃþÀ¸·Î ±¸¼ºµÈ ÀÚ±â ÅͳΠÁ¢ÇÕ(MTJ)À» »ç¿ëÇÕ´Ï´Ù. ÀÌ´Â °í¹Ðµµ RAMÀ̸ç, Ä¿ÆÐ½ÃÅÍ¿Í Æ®·£Áö½ºÅ͸¦ Æ÷ÇÔÇÕ´Ï´Ù. ±âÁ¸ µ¿Àû ·£´ý ¾×¼¼½º ¸Þ¸ð¸®(DRAM)¿¡ ºñÇØ MRAMÀº Àü¿ø °ø±Þ ¾øÀ̵µ ¸Þ¸ð¸®¿¡ ÀúÀåµÈ Á¤º¸¸¦ À¯ÁöÇÒ ¼ö ÀÖ¾î ºñ¿ë È¿À²ÀûÀ̸ç, Å« ¿¡³ÊÁö¸¦ ¼ÒºñÇÏ´Â ÆÞ½º¸¦ ÇÊ¿ä·Î ÇÏÁö ¾Ê¾Æ ¿¡³ÊÁö ¼Òºñ°¡ Àû½À´Ï´Ù. ±× °á°ú, ·Îº¿ °øÇÐ, ÀÚµ¿Â÷, °¡ÀüÁ¦Ç°, ±â¾÷¿ë ½ºÅ丮Áö ½Ã½ºÅÛ µî¿¡ ³Î¸® »ç¿ëµÇ°í ÀÖ½À´Ï´Ù.
¹Î¼ö¿ë ÀüÀÚÁ¦Ç° »ê¾÷ÀÇ °ý¸ñÇÒ¸¸ÇÑ ¼ºÀåÀº ½ÃÀå Àü¸ÁÀ» ¹à°Ô ¸¸µå´Â Áß¿äÇÑ ¿äÀÎ Áß ÇϳªÀ̸ç, MRAMÀº ¿öÅ©½ºÅ×À̼Ç, ½º¸¶Æ® ¿þ¾î·¯ºí, ½º¸¶Æ®Æù, µðÁöÅÐ Ä«¸Þ¶ó µî ´Ù¾çÇÑ ÀüÀÚÁ¦Ç°¿¡ ³Î¸® »ç¿ëµÇ°í ÀÖ½À´Ï´Ù. ¶ÇÇÑ, °í¿Â µ¥ÀÌÅÍ ÀúÀå¿¡ ´ëÇÑ Ç×°ø¿ìÁÖ ¹× ¹æÀ§ »ê¾÷¿¡¼ Á¦Ç° ¼ö¿ä°¡ Áõ°¡ÇÏ¸é¼ ½ÃÀå ¼ºÀåÀ» ÃËÁøÇϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ, ³»¹æ»ç¼± ¸¶ÀÌÅ©·ÎĨ¿ë ÀúÀü·Â MRAMÀÇ °³¹ß µî ´Ù¾çÇÑ Á¦Ç° Çõ½ÅÀÌ ½ÃÀå ¼ºÀåÀ» ÃËÁøÇϰí ÀÖ½À´Ï´Ù. ÀÌ Á¦Ç°µéÀº Àü·Â È¿À²ÀÌ ³ô°í, ¹æ»ç¼±¿¡ °Çϸç, ¿Âµµ º¯È¿¡µµ Àß °ßµð´Â Ư¡À» °¡Áö°í ÀÖ½À´Ï´Ù. ÀÌ¿Í ÇÔ²² »ç¹°ÀÎÅͳÝ(IoT) Áö¿ø ±â±â¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡¿Í ÷´Ü ¼¾¼ ¹× ½º¸¶Æ® ·Îº¿ÀÇ º¸±ÞÀÌ ½ÃÀå ¼ºÀå¿¡ ±àÁ¤ÀûÀÎ ¿µÇâÀ» ¹ÌÄ¡°í ÀÖ½À´Ï´Ù. ±× ¿Ü ¼ÒÇüÈ ¹× ¸ÂÃãÇü ÁýÀûȸ·Î(IC)ÀÇ Á¦Ç° Ȱ¿ë Áõ°¡, ´Ù¾çÇÑ ÀÇ·á ÁúȯÀÇ ºñħ½ÀÀû Áø´Ü °Ë»ç¸¦ À§ÇÑ MRAM ³»ÀåÇü ÀÇ·á¿ë ¼¾¼ÀÇ ±¤¹üÀ§ÇÑ Ã¤Åà µîÀÌ ½ÃÀå ¼ºÀåÀÇ ¿øµ¿·ÂÀÌ µÉ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
The global magneto resistive RAM (MRAM) market size reached US$ 617.2 Million in 2023. Looking forward, IMARC Group expects the market to reach US$ 11,076.3 Million by 2032, exhibiting a growth rate (CAGR) of 37.1% during 2024-2032.
Magneto resistive random access memory (MRAM), or magnetic RAM, is a non-volatile memory that uses magnetic charges to store information. Spin-transfer torque and toggle MRAM are some of the commonly available variants. They utilize magnetic tunnel junction (MTJ) that comprises two magnetic layers separated through a dielectric or insulation layer. It is a high-density RAM and it includes a capacitor and a transistor. In comparison to the traditionally used dynamic random-access memory (DRAM), MRAM can retain the information stored in the memory without a power source, is more cost-effective and does not require a large energy-consuming pulse. As a result, it is widely used in robotics, automobiles, consumer electronics and enterprise storage systems.
Significant growth in the consumer electronics industry is one of the key factors creating a positive outlook for the market. MRAM is widely used in various electronic gadgets, such as workstations, smart wearables, smartphones and digital cameras. Additionally, the increasing product demand in the aerospace and defense industries for high-temperature data storage is favoring the market growth. Moreover, various product innovations, such as the development of low-power MRAM variants for radiation-hardened microchips, are providing thrust to the market growth. They are power-efficient, resistant to radiations and can operate under temperature fluctuations. In line with this, the increasing demand for Internet of Things (IoT)-enabled devices and the widespread utilization of advanced sensors and smart robots are positively impacting the market growth. Other factors, including the increasing product utilization in miniaturized and customized integrated circuits (ICs), along with the widespread adoption of MRAM-embedded medical sensors for non-invasive diagnostic testing of medical various disorder, are anticipated to drive the market toward growth.
IMARC Group provides an analysis of the key trends in each sub-segment of the global magneto resistive RAM (MRAM) market report, along with forecasts at the global, regional and country level from 2024-2032. Our report has categorized the market based on type, offering and application.
Toggle MRAM
Spin-Transfer Torque MRAM (STT-MRAM)
Stand-alone
Embedded
Consumer Electronics
Robotics
Enterprise Storage
Automotive
Aerospace and Defense
Others
North America
United States
Canada
Asia-Pacific
China
Japan
India
South Korea
Australia
Indonesia
Others
Europe
Germany
France
United Kingdom
Italy
Spain
Russia
Others
Latin America
Brazil
Mexico
Others
Middle East and Africa
The competitive landscape of the industry has also been examined along with the profiles of the key players being Avalanche Technology Inc., Crocus Nano Electronics LLC, Everspin Technologies Inc., Honeywell International Inc., Infineon Technologies AG, Intel Corporation, NVE Corporation, Qualcomm Incorporated, Samsung Electronics Co. Ltd., Spin Memory Inc., Toshiba Corporation and Tower Semiconductor Ltd.