와이드 밴드갭 파워 반도체 시장 - 예측(2024-2029년)

The wide-bandgap power semiconductor market is expected to experience a CAGR of 27.37% throughout the forecast period, reaching a market size of US$9,623.132 million by 2029, from US$1,769.826 million in 2022.

Wide-bandgap (WBG) semiconductors, when modified with molecular species, exhibit distinctive optical and electronic properties. These components are characterized by their smaller size, faster operation, enhanced reliability, and greater efficiency compared to silicon-based counterparts in power electronics. The unique scientific and technological attributes of WBG power semiconductors have led to their increasing popularity in high-performance optoelectronic and electronic devices. With a rising demand for consumer electronics and related technologies like fast charging in the current period, the market for WBG semiconductors is expected to expand significantly. The devices transform their physical characteristics at high frequencies, while their chemical and mechanical features find applications in optoelectronic uses. The combination of high performance and novel properties is opening new opportunities and paving the way for the market's growth in the years ahead.

MARKET DRIVERS:

• Rising shift towards silicon carbide (SiC) and gallium nitride (GaN) materials:

In the realm of power electronics, wide and ultrawide bandgap power electronic semiconductors represent a transformative innovation. These state-of-the-art materials, including silicon carbide (SiC), gallium nitride (GaN), and diamond, outperform traditional Si-based products. Recent years have witnessed substantial improvements in wide bandgap power electronic semiconductors. It encompasses improvements in material quality, device design, and manufacturing techniques. The development of superior SiC and GaN substrates, progress in crystal growth methods, and refinement in device production processes have resulted from collaborative efforts between academic and industry stakeholders. These advancements have made wide bandgap devices increasingly viable commercially. This is driven by heightened material performance, improved device yields, and reduced production costs.

Silicon carbide (SiC) stands out as one of the extensively researched and readily available wide bandgap materials. It possesses a bandgap energy of approximately 3.3 electron volts (eV), a notable increase compared to silicon's 1.1 eV. Power devices based on SiC offer multiple advantages, including reduced conduction and switching losses, heightened tolerance to higher temperatures, and enhanced overall efficiency. Another noteworthy wide bandgap material is gallium nitride (GaN), which has garnered significant attention in recent times. GaN exhibits a bandgap energy of approximately 3.4 eV, similar to SiC. Power devices based on GaN demonstrate exceptional performance characteristics, including high breakdown voltages, swift switching speeds, and low on-resistance.

• Market developments to increase the market lucrativeness for wide bandgap power semiconductor materials.

PowerAmerica and X-Fab partnered together to convert a former Texas Instruments facility that produced conventional silicon wafers into the world's first open silicon carbide foundry. To improve power electronics' energy efficiency and dependability, PowerAmerica aimed to lower entry barriers and assist in the commercialization of wide bandgap (WBG) power electronics technologies. This is expected to increase the market share of wide-bandgap power semiconductors in the United States.

In November 2021, Nexperia, a leading provider of essential semiconductors, announced its entry into the high-power Silicon Carbide (SiC) diodes market by introducing 650 V, 10 A SiC Schottky diodes. This strategic move by Nexperia, known for its reliable supply of efficient power Gallium Nitride (GaN) FETs, aims to broaden its portfolio of high-voltage wide bandgap semiconductor devices. The inaugural SiC Schottky diode from Nexperia is an industrial-grade device. It features a repetitive peak reverse voltage (VRRM) of 650 V and a continuous forward current (IF) of 10 A. It is specifically designed to offer a combination of ultra-high performance, high efficiency, and low energy loss in power conversion applications.

On February 17, 2022, Infineon Technologies AG bolstered its market leadership in power semiconductors by expanding manufacturing capacities in the wide bandgap (SiC and GaN) semiconductor sector. The company invested over €2 billion to construct a third module at its Kulim, Malaysia site. When fully operational, the new module was projected to generate an additional €2 billion in annual revenue with products based on silicon carbide and gallium nitride.

On June 19, 2023, Vitesco Technologies, a prominent global manufacturer specializing in modern drive technologies and electrification solutions, secured strategically significant capacities in energy-efficient silicon carbide power semiconductors. This achievement is the result of a long-term supply partnership valued at over one billion US dollars with ROHM, extending until 2030. Silicon carbide (SiC) devices play a crucial role in the design of highly efficient power electronics, especially in applications such as electric car inverters. SiC chips represent a key technology, particularly for high voltages and for vehicles with ambitious range goals and optimal overall efficiency. Through the ongoing development partnership with ROHM, the relevant SiC chips have been further enhanced for use in automotive inverters, with implementation starting in 2024.

Americas to witness significant market growth for the wide-bandgap power semiconductors market:

The growing need for energy-efficient electronic devices across a range of industries is one of the factors driving the market in the United States.

Further, the growing emphasis on electric vehicles and the shift to renewable energy sources are driving up demand for WBG power semiconductors in the United States and expanding the market. For instance, the growing need for energy-efficient electronic devices across a range of industries is an important growth drive. WBG power semiconductors are crucial for applications in consumer electronics, automotive, and renewable energy. This is because they provide better performance and efficiency than conventional silicon-based devices. Examples of these devices are silicon carbide (SiC) and gallium nitride (GaN) components. Furthermore, the growing emphasis on electric vehicles and the shift to renewable energy sources are driving up demand for WBG power semiconductors and expanding the market in the United States.

Moreover, as per the International Energy Agency, the sales of electric vehicles rose by 55% in the US in 2022 compared to 2021, with BEVs driving this growth. After a strong growth in 2019-2020, sales of BEVs increased by 70% to nearly 800,000, indicating a second year of strong growth.

Market Segmentation:

By Material

• Silicon Carbide
• Gallium Nitride
• Diamond
• Gallium Oxide
• Aluminium Nitride

By Application

• Data Centers
• Renewable Energy Generation
• Hybrid and Electric Vehicles
• Motor Drives

By Geography

• Americas
• USA
• Others
• Europe Middle East and Africa
• UK
• Germany
• France
• Others
• Asia Pacific
• China
• Japan
• Taiwan
• South Korea
• Others

TABLE OF CONTENTS

1. INTRODUCTION

• 1.1. Market Overview
• 1.2. Market Definition
• 1.3. Scope of the Study
• 1.4. Market Segmentation
• 1.5. Currency
• 1.6. Assumptions
• 1.7. Base, and Forecast Years Timeline

2. RESEARCH METHODOLOGY

• 2.1. Research Data
• 2.2. Research Process

3. EXECUTIVE SUMMARY

• 3.1. Research Highlights

4. MARKET DYNAMICS

• 4.1. Market Drivers
• 4.2. Market Restraints
• 4.3. Porter's Five Forces Analysis
• 4.4. Industry Value Chain Analysis

5. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET, BY MATERIAL

• 5.1. Introduction
• 5.2. Silicon Carbide
• 5.3. Gallium Nitride
• 5.4. Diamond
• 5.5. Gallium Oxide
• 5.6. Aluminium Nitride

6. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET, BY APPLICATION

• 6.1. Introduction
• 6.2. Data Centers
• 6.3. Renewable Energy Generation
• 6.4. Hybrid and Electric Vehicles
• 6.5. Motor Drives

7. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET, BY GEOGRAPHY

• 7.1. Introduction
• 7.2. Americas
  • 7.2.1. By Material
  • 7.2.2. By Application
  • 7.2.3. By Country
    • 7.2.3.1. USA
    • 7.2.3.2. Others
• 7.3. Europe Middle East and Africa
  • 7.3.1. By Material
  • 7.3.2. By Application
  • 7.3.3. By Country
    • 7.3.3.1. Germany
    • 7.3.3.2. France
    • 7.3.3.3. UK
    • 7.3.3.4. Others
• 7.4. Asia Pacific
  • 7.4.1. By Material
  • 7.4.2. By Application
  • 7.4.3. By Country
    • 7.4.3.1. China
    • 7.4.3.2. Japan
    • 7.4.3.3. Taiwan
    • 7.4.3.4. South Korea
    • 7.4.3.5. Others

8. COMPETITIVE ENVIRONMENT AND ANALYSIS

• 8.1. Major Players and Strategy Analysis
• 8.2. Market Share Analysis
• 8.3. Mergers, Acquisitions, Agreements, and Collaborations

9. COMPANY PROFILES

• 9.1. ROHM SEMICONDUCTOR
• 9.2. Wolfspeed, Inc.
• 9.3. STMicroelectronics
• 9.4. Infineon Technologies AG
• 9.5. Mitsubishi Electric Corporation
• 9.6. Semikron Danfoss
• 9.7. Texas Instruments
• 9.8. Analog Devices, Inc.
• 9.9. Navitas Semiconductor
• 9.10. Microchip Technology Inc.