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MOSFET Power Transistors - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2024 - 2029)

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MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ ½ÃÀå ±Ô¸ð´Â 2024³â¿¡ 71¾ï 5,000¸¸ ´Þ·¯·Î ÃßÁ¤µÇ°í, 2029³â¿¡´Â 89¾ï 1,000¸¸ ´Þ·¯¿¡ À̸¦ °ÍÀ¸·Î ¿¹ÃøµÇ¸ç, ¿¹Ãø ±â°£ Áß(2024-2029³â) CAGRÀº 4.49%¸¦ ³ªÅ¸³¾ Àü¸ÁÀÔ´Ï´Ù.

MOSFET Power Transistors-Market

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  • ÆÄ¿ö MOSFETÀº ȸ·ÎÀÇ °íÀü·ù¿Í Àü·ÂÀ» Á¶Á¤ÇÏ´Â ¿ªÇÒÀ» ÇÕ´Ï´Ù. ÀÌ ºÎǰÀº ÀϹÝÀûÀ¸·Î Çϳª¾¿ ÆÐŰ¡µÈ ´ÜÀÏ Æ®·£Áö½ºÅÍÀÔ´Ï´Ù. ½ºÀ§Äª Àü¿ø ¹× ¸ðÅÍ ÄÁÆ®·Ñ·¯¿¡¼­ ÀÚÁÖ º¼ ¼ö ÀÖ½À´Ï´Ù. ÀüÀÚ »ê¾÷Àº MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ¿¡ Å©°Ô ÀÇÁ¸ÇÕ´Ï´Ù. ÆÄ¿ö MOSFETÀº ±¤¹üÀ§ÇÑ °¡Á¤¿ë ÀüÀÚ ±â±â¿¡ ±¤¹üÀ§ÇÏ°Ô ÅëÇյǾî ÀÖ½À´Ï´Ù. °¡Á¤¿ë ÀüÀÚ±â±â »ê¾÷ÀÇ »ó´çÇÑ ¼ºÀåÀÌ ¿¹ÃøµÇ°í ÀÖÀ¸¸ç, ¿¹Ãø ±â°£Àº ½ÃÀå Á¶»ç¿¡ ±âȸ°¡ µÉ °ÍÀÔ´Ï´Ù.
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  • °¢ º¥´õ»ç´Â ´Ù¾çÇÑ Á¦Ç°ÀÇ ±â¼ú Çõ½Å¿¡ ¸¹Àº ÅõÀÚ¸¦ Çϰí ÀÖ½À´Ï´Ù. ¿¹¸¦ µé¾î, Toshiba Electronics Europe GmbH´Â 2023³â 6¿ù N ä³Î ÆÄ¿ö MOSFETÀÇ »õ·Î¿î ¶óÀξ÷À» ¹ßÇ¥Çß½À´Ï´Ù. 600V ³»¾ÐÀÇ DTMOSVI ½Ã¸®ÁîÀÇ Á¦1źÀÌ µÇ´Â TK055U60Z1Àº ToshibaÀÇ ÃÖ÷´Ü ÇÁ·Î¼¼½ºÀÎ ½´ÆÛ Á¤¼Ç ±¸Á¶¸¦ ä¿ëÇϰí ÀÖ½À´Ï´Ù. µ¥ÀÌÅͼ¾ÅÍÀÇ °íÈ¿À² ½ºÀ§Äª Àü¿ø, ž籤 ¹ßÀü¿ë ÆÄ¿ö ÄÁµð¼Å³Ê, ¹«Á¤Àü Àü¿ø ½Ã½ºÅÛ µî ´Ù¾çÇÑ ¿ëµµ¿¡ ´ëÀÀÇÕ´Ï´Ù.
  • ¶ÇÇÑ Ç×°ø¿ìÁÖ ¹× ¹æÀ§ ºÐ¾ß¿¡¼­ MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍÀÇ »ç¿ëµµ ÇöÀúÇÏ°Ô Áõ°¡Çϰí ÀÖ½À´Ï´Ù. ¼¼°èÀÇ Ç×°ø¿ìÁÖ»ê¾÷Àº ¿©°´ ¼ö¼Û·®°ú ±º»çºñ Áõ°¡¿¡ ÀÇÇØ ´ëÆøÀûÀÎ ¼ºÀåÀ» ÀÌ·ç°í ÀÖÀ¸¸ç, À̰ÍÀÌ MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ ¼ö¿ä¸¦ ²ø¾î¿Ã¸± °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ¶ÇÇÑ ¿¬±¸ÀÚµéÀº »õ·Î¿î ÀÀ¿ë ºÐ¾ß¸¦ ¸ð»öÇϰí ÀÖÀ¸¸ç Çõ½ÅÀûÀÎ ¼Ö·ç¼ÇÀ» °³¹ßÇϰí ÀÖ½À´Ï´Ù. ¿¹¸¦ µé¾î 2023³â 6¿ù, GE ResearchÀÇ °úÇÐÀÚµéÀº Áö±Ý±îÁöÀÇ ½ÇÁõÀ» ¿ôµµ´Â 800¡É¸¦ ³Ñ´Â ¿Âµµ¸¦ °ßµð´Â SiC MOSFETÀÇ Àü½Ã¿¡ ¼º°øÇß½À´Ï´Ù. ÀÌ È¹±âÀûÀÎ °á°ú´Â ±ØÇÑÀÇ ÀÛµ¿ Á¶°Ç¿¡¼­ ¹Ì·¡ÀÇ ¿ëµµÀ» Áö¿øÇÏ´Â SiC MOSFETÀÇ ÀáÀç·ÂÀ» ºÎ°¢½ÃÄ×½À´Ï´Ù.
  • ÀüÀÚ »ê¾÷°ú ÀÚµ¿Â÷ »ê¾÷ÀÇ È¹±âÀûÀÎ ¼ºÀåÀº ¹Ð·¹´Ï¾ó ¼¼´ë¿¡¼­ÀÇ ÀüÀÚ ÀåºñÀÇ º¸±Þ, °Ç°­ °ü¸® Àåºñ, ÇÏÀ̺긮µå ÀÚµ¿Â÷ ¹× Àü±âÀÚµ¿Â÷(HEV ¹× EV)ÀÇ ÃâÇö¿¡ °­·ÂÇÏ°Ô Áö¿øµÇ°í ÀÖ½À´Ï´Ù. °Ô´Ù°¡ MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ ½ÃÀåÀº Áö¼ÓÀûÀÎ ±â¼ú Áøº¸¿Í Çõ½Å ±â¼úÀÇ µµÀÔº¸´Ù ¹ø¿µÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. À̰ÍÀº MOSFET ÆÄ¿ö Æ®·£Áö½ºÅͰ¡ ¿¹Ãø °¡´ÉÇÑ ¹Ì·¡¿¡ Áö¼ÓÀûÀ¸·Î È®´ëµÇ´Â ÀüÀÚ ¹× ÀÚµ¿Â÷ ºÐ¾ß¿¡ ±â¿©ÇÒ ¼öÀÖ´Â ¾öû³­ ÀáÀç·ÂÀ» °¡Áö°í ÀÖÀ½À» º¸¿©ÁÝ´Ï´Ù.
  • ¶ÇÇÑ µð½ºÅ©¸®Æ® ÆÄ¿ö MOSFETÀº °íÀü¾Ð ¹× °íÀü·ù ½ÅÈ£¸¦ Á¦¾îÇϱâ À§ÇØ »ê¾÷, ÀÚµ¿Â÷ ¹× °¡Á¤¿¡¼­ ÀϹÝÀûÀ¸·Î »ç¿ëµÇ´Â Æ®·£Áö½ºÅÍ ºÎǰÀÔ´Ï´Ù. ÀÌ·¯ÇÑ »ê¾÷¿¡¼­´Â È¿À²ÀûÀÎ Àü·Â ¼Ö·ç¼Ç¿¡ ´ëÇÑ ¿ä±¸°¡ Ä¿Áö°í ÀÖÀ¸¸ç ½ºÀ§Äª Á֯ļö Çâ»ó, ¼ÒÇüÈ­, °æ·®È­, ¿­ Á¦¾î °­È­ µîÀÇ °úÁ¦°¡ Á¦½ÃµÇ°í ÀÖ½À´Ï´Ù.
  • 2020³â ÃÊ¿¡ COVID-19°¡ ³Î¸® ¹ß»ýÇÏ¿© Á¶»ç ´ë»ó ½ÃÀå°ø±Þ¸Á°ú »ý»ê¿¡ Å« Àå¾Ö°¡ »ý°å½À´Ï´Ù. ¶ÇÇÑ, ½ÃÀåÀÇ ¸¹Àº ÃÖÁ¾ »ç¿ëÀÚ ºÎ¼­´Â COVID-19ÀÇ ´ëÀ¯ÇàÀÇ ¿µÇâÀ» ¹Þ¾Æ ½ÃÀå¿¡ ÇØ·Î¿î °á°ú¸¦ °¡Á®¿Ô½À´Ï´Ù. ±×·¯³ª 2021³â Á¶ÀÓ ±ÔÁ¦°¡ ¼­¼­È÷ ¿ÏÈ­µÊ¿¡ µû¶ó MOSFETÀ» Æ÷ÇÔÇÑ Á¦Ç°¿¡ ´ëÇÑ ¼ö¿ä°¡ ºÐ¸íÈ÷ ±ÞÁõÇÏ¿© ½ÃÀå¿¡ ±àÁ¤ÀûÀÎ ¿µÇâÀ» ¹ÌÃÆ½À´Ï´Ù.

MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ ½ÃÀå µ¿Çâ

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  • ¼¼°è Àü±âÀÚµ¿Â÷ ¼ö¿ä Áõ°¡¿Í ¿îÀüÀÚ ¾ÈÀü È®º¸¸¦ À§ÇØ MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ´Â ÀÚµ¿Â÷¿¡ ³Î¸® »ç¿ëµÇ°í ÀÖ½À´Ï´Ù. MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ´Â ¿îÀüÀÚÀÇ ¿¬°á ¿îÀü°ú ¾ÈÀü Çõ½ÅÀ» °³¼±Çϱâ À§ÇØ ½ÃÀå ¼ö¿ä¸¦ ÃËÁøÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ÀÚµ¿Â÷ÀÇ ±Þ¼ÓÇÑ Àü±âÈ­´Â ÀÚµ¿Â÷ MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ ½ÃÀåÀÇ ¼ºÀåÀ» °¡¼ÓÇϰí ÀÖ½À´Ï´Ù.
  • ADAS(÷´Ü¿îÀüÁö¿ø½Ã½ºÅÛ)ÀÇ Ã¤¿ëÀÌ È®´ëµÇ°í ADAS¸¦ Àǹ«È­ÇÏ´Â Á¤ºÎ±ÔÁ¦°¡ ¼¼°èÀûÀ¸·Î Áõ°¡Çϰí ÀÖ´Â °Íµµ ÀÌ ºÎ¹®ÀÇ ¹üÀ§¸¦ È®´ëÇϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ ÀÚµ¿Â÷ ÀÎÆ÷Å×ÀÎ¸ÕÆ®ÀÇ Ã¤ÅÃÀÌ °è¼Ó Áõ°¡Çϰí ÀÖ´Â °Íµµ ¼ºÀå ±âȸ¸¦ °¡Á®¿Ã °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ±×·¯³ª ÀÚµ¿Â÷ µðÁöÅÐ ¿ëµµÀÇ º¹À⼺°ú ÇÔ²² MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ¿Í ±â¼úÀÇ ²÷ÀÓ¾ø´Â ÁøÈ­°¡ ¿ä±¸µÇ°í ÀÖ½À´Ï´Ù.
  • ÀÚµ¿Â÷ »ê¾÷¿¡¼­´Â Àüµ¿È­¿Í ÀÚÀ²ÁÖÇà ±â¼úÀÌ º¸±ÞµÇ¾î º¸´Ù ¸¹Àº ÀüÀÚ À¯´Ö°ú Á¦¾î À¯´ÖÀÌ Å¾ÀçµÇµµ·Ï µÇ¾î ÀÖ½À´Ï´Ù. ¿¹¸¦ µé¾î, 2022³â¿¡´Â BYD°¡ Tesla¸¦ ¶Ù¾î³Ñ¾î Ç÷¯±×ÀÎ Àü±âÂ÷ÀÇ Åé Á¦Á¶¾÷ü°¡ µÇ¾ú½À´Ï´Ù. ¿ÃÇØ BYD´Â ¾à 185¸¸´ëÀÇ Ç÷¯±×ÀÎ Àü±âÀÚµ¿Â÷¸¦ ÆÇ¸ÅÇß½À´Ï´Ù. ¶ÇÇÑ AI¿Í IoTÀÇ µµÀÔ, ÀÚÀ²ÁÖÇࡤ¿¬°á¡¤Àú¹èÃâ °¡½ºÂ÷ÀÇ »ý»ê¿¡ À¯¸®ÇÑ Á¤ºÎ±âÁØ µîÀÇ ±â¼úÀû Áøº¸°¡ ½ÃÀåÀÇ ¼ºÀåÀ» ´õ¿í ÃËÁøÇϰí ÀÖ½À´Ï´Ù.
  • ¶ÇÇÑ ÀÚµ¿Â÷ ºÐ¾ß¿¡¼­ÀÇ MOSFET ¼ö¿ä¿Í ÀÌ¿ë »ç·ÊÀÇ È®´ëµµ º¥´õ¿¡ ÀÇÇÑ Çõ½ÅÀûÀÎ ¼Ö·ç¼ÇÀÇ °³¹ßÀ» ÃßÁøÇϰí ÀÖÀ¸¸ç, Á¶»ç ´ë»ó ½ÃÀåÀÇ ¼ºÀåÀ» ´õ¿í ÃËÁøÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ¿¹¸¦ µé¾î, Toshiba Electronic Devices & Storage Corporation´Â 2022³â 7¿ù Àú¿Â ÀúÇ×À¸·Î ½ºÀ§Äª ¼Õ½ÇÀ» Å©°Ô ÁÙÀΠźȭ±Ô¼Ò(SiC) MOSFETÀÇ °³¹ßÀ» ¹ßÇ¥Çß½À´Ï´Ù. SiC ÆÄ¿ö µð¹ÙÀ̽º´Â ÇöÀç, öµµ¿ë ÀιöÅÍ¿¡¼­ÀÇ ÀÌ¿ëÀÌ È®´ëµÇ°í ÀÖÁö¸¸, ÀÚµ¿Â÷ÀÇ Àü±â³ª »ê¾÷±â±âÀÇ ¼ÒÇüÈ­ µî, º¸´Ù ±¤¹üÀ§ÇÑ ÀÀ¿ëÀÌ ½Ã¾ß¿¡ µé¾î°¡°í ÀÖ½À´Ï´Ù.

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  • ¾Æ½Ã¾ÆÅÂÆò¾çÀº MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ ½ÃÀå¿¡¼­ °¡Àå ³ôÀº Á¡À¯À²À» Â÷ÁöÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ÀÌ·¯ÇÑ ¼ºÀåÀÇ ¹è°æÀ¸·Î´Â °¡Á¤¿ë ÀüÀÚ±â±âÀÇ Ã¤¿ë Áõ°¡, ÀÌ Áö¿ªÀÇ ¼ÒºñÀÚ °¡Ã³ºÐ ¼Òµæ Áõ°¡, ±â¼ú Áøº¸ Áõ°¡, ÀÎÇÁ¶óÀÇ È°È², ÀÌ Áö¿ªÀÇ ±â¼ú Áøº¸ Áõ°¡ µîÀÇ ¿äÀÎÀÌ ÀÖ½À´Ï´Ù.
  • ¶ÇÇÑ ¾Æ½Ã¾ÆÅÂÆò¾ç ½ÃÀåÀÇ ¼ºÀåÀº µ¿Áö¿ª¿¡ ÆÄ¿ö MOSFET Á¦Á¶¾÷ü°¡ º¹¼ö Á¸ÀçÇÏ°í ±¸¸ÅÀÚ°¡ Á¦Ç°À» ÀÔ¼öÇϱ⠽¬¿î ¿äÀο¡µµ ¿µÇâÀ» ¹ÌÄ¥ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. °Ô´Ù°¡ ÀÌ Áö¿ª¿¡´Â ´ë±Ô¸ð ¼ÒºñÀÚÃþÀÌ Á¸ÀçÇÏ°í °¡ÀüÁ¦Ç° ¼ö¿ä°¡ È®´ëµÇ°í ÀÚµ¿Â÷ »ê¾÷ÀÌ ²ÙÁØÈ÷ ¼ºÀåÇϰí Àֱ⠶§¹®¿¡ MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ °³¹ß¿¡ ÀûÇÕÇÑ ½ÃÀåÀÌ Çü¼ºµÇ°í ÀÖ½À´Ï´Ù.
  • ÃÖ±Ù ¼ö½Ê³âµ¿¾È Áß±¹Àº »ê¾÷ ºÎ¹®ÀÇ ±Þ¼ÓÇÑ ¹ßÀüÀ¸·ÎÀÌ Áö¿ªÀÇ ÁÖ¿ä °æÁ¦ ±¹°¡·Î ºÎ»óÇß½À´Ï´Ù. ¼¼°èÀºÇà¿¡ µû¸£¸é Áß±¹ÀÇ »ê¾÷ºÎ¹®Àº Áö³­ ¼ö½Ê³â°£ ¿¬Æò±Õ 10% °¡±îÀÌ ¼ºÀåÇϰí ÀÖÀ¸¸ç, ÀÌ ³ª¶ó¸¦ ¼¼°èÀÇ Á¦Á¶°ÅÁ¡À¸·Î ÇÏ´Â µ¿½Ã¿¡ MOSFET ÆÄ¿ö Æ®·£Áö½ºÅͰ¡ ´Ù¾çÇÑ »ê¾÷ºÐ¾ßÀÇ Á¦Ç°°ú ±â±â¿¡ ³Î¸® »ç¿ë µÇ¾î Àֱ⠶§¹®¿¡ MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ ¼ö¿ä¸¦ °ßÀÎÇϰí ÀÖ½À´Ï´Ù.
  • °Ô´Ù°¡ ÀϺ»Àº MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ ½ÃÀå¿¡¼­µµ Áß¿äÇÑ À§Ä¡¸¦ Â÷ÁöÇϰí ÀÖ¾î, ¸î¸î ÁÖ¿ä Á¦Á¶¾÷ü³ª ÀÏ·ºÆ®·Î´Ð½º ¹× ÇコÄÉ¾î ±â±â »ê¾÷ÀÇ º»°ÅÁö°¡ µÇ°í ÀÖ½À´Ï´Ù. ÀϺ» À繫ºÎ¿¡ µû¸£¸é 2023³â ÀÇ·á ¹× ÀǾàǰ Á¦Ç°ÀÇ ¼öÃâ¾×Àº 1,018¾ï 1,500¸¸¿£(68¸¸86´Þ·¯)À̾ú½À´Ï´Ù. ¶ÇÇÑ ÃÖ±Ù¿¡´Â ¹ÝµµÃ¼ »ê¾÷ÀÇ È°¼ºÈ­¸¦ À§ÇØ ¹ÝµµÃ¼ ±â¾÷ÀÇ À¯Ä¡³ª Ÿ±¹°úÀÇ Á¦ÈÞ¿¡ ÈûÀ» ½ñ±â ½ÃÀÛÇϰí ÀÖ¾î ½ÃÀå Á¶»çÀÇ ±âȸ¸¦ ÃËÁøÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.

MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ »ê¾÷ °³¿ä

MOSFET ÆÄ¿ö Æ®·£Áö½ºÅÍ ½ÃÀåÀº ¸¹Àº Áö¿ª ¹× ¼¼°è ±â¾÷µéÀÌ Á¸ÀçÇÏ°í °æÀïÀº Áß°£ Á¤µµÀÔ´Ï´Ù. ±â¼ú Çõ½Å¿¡ ÁßÁ¡À» µÐ ´ë±â¾÷ÀÇ ´Ù¾çÇÑ Àμö¿Í Á¦ÈÞ°¡ °ð ÀÌ·ç¾îÁú °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ÁÖ¿ä ½ÃÀå ±â¾÷À¸·Î´Â Analog Devices Inc., Texas Instruments, Broadcom Inc., NXP Semiconductors µîÀÌ ÀÖ½À´Ï´Ù.

  • 2023³â 10¿ù Toshiba Electronics Europe GmbH(ÀÌÇÏ ¡°Toshiba¡±)´Â ÃֽŠU-MOS IX-H ÇÁ·Î¼¼½º¸¦ ä¿ëÇÑ Â÷Àç µî±ÞÀÇ 40V N ä³Î ÆÄ¿ö MOSFETÀ» ¹ß¸ÅÇß½À´Ï´Ù. ½Å µð¹ÙÀ̽º´Â Â÷Àç ¿ëµµ¿¡ ¸¹Àº ÀÌÁ¡À» °¡Á®¿À´Â ½Å ÆÐŰÁö S-TOGLTM(Small Transistor Outline Gull-wing Leads)¸¦ ä¿ëÇÕ´Ï´Ù.
  • 2023³â 7¿ù Micro Commercial Components Corp.Àº ¼ÒÇü Nä³Î MOSFET¿¡¼­ °íÀü·ù¸¦ °¡´ÉÇÏ°Ô ÇÏ´Â Çõ½ÅÀûÀÎ TO-¸®µå¸®½º(TOLL) ÆÐŰÁö¸¦ ¹ßÇ¥Çß½À´Ï´Ù. ÀÌ È¸»ç¿¡ µû¸£¸é 4°³ÀÇ »õ·Î¿î TOLL °íÀü·Â MOSFETÀº »ê¾÷ ¿ëµµÀÇ ±î´Ù·Î¿î ¿ä±¸¸¦ ÃæÁ·½ÃŰ´Â ½º¸¶Æ® ¼Ö·ç¼ÇÀÔ´Ï´Ù. ¶ÇÇÑ, ÀÌ·¯ÇÑ ¼Ö·ç¼ÇÀº ¼³°è Á¦¾àÀÎ Å©±â¸¦ Á¦°ÅÇϰí, Àüü ºÎǰ ºñ¿ëÀ» ÁÙÀ̰í, ÃÖ´ë ¿î¿µ È¿À²¼ºÀ» Á¦°øÇÏ´Â Ãß°¡ ±â´ÉÀ» Á¦°øÇÕ´Ï´Ù.

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    • Infineon Technologies AG
    • Renesas Electronics Corporation
    • Texas Instruments Incorporated
    • Analog Devices Inc.
    • Microchip Technology Inc
    • NXP Semiconductors.
    • Broadcom Inc.
    • Mitsubishi Electric Corporation
    • Toshiba Corporation
    • Vishay Intertechnology Inc.

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JHS 24.09.12

The MOSFET Power Transistors Market size is estimated at USD 7.15 billion in 2024, and is expected to reach USD 8.91 billion by 2029, growing at a CAGR of 4.49% during the forecast period (2024-2029).

MOSFET Power Transistors - Market

Key Highlights

  • The metal-oxide-semiconductor field-effect transistor, also known as MOSFET, is widely recognized as the predominant type of field-effect transistor (FET). MOSFETs function as both electrical switches and amplifiers, regulating the flow of electricity between the source and drain terminals in response to the voltage applied to the gate terminal. MOSFETs are favored for their superior characteristics, such as lower power consumption, faster switching speeds, and the ability to be efficiently miniaturized and densely packed, rendering them ideal for integrated circuits.
  • Power MOSFETs serve the purpose of regulating high current or power in circuits. These components are typically single transistors packaged individually. They are commonly found in switching power supplies and motor controllers. The electronics industry heavily relies on MOSFET power transistors. Power MOSFETs are extensively integrated into a broad spectrum of consumer electronics. With significant growth projected for the consumer electronics industry, the forecast period will offer opportunities for the market studied.
  • Similarly, the rapid adoption of MOSFETs in the energy and power industry has made them increasingly popular. With a growing emphasis on energy conservation and the depletion of fossil fuels, there has been a shift toward utilizing renewable sources of electricity. Consequently, there has been a surge in demand for power MOSFETs. According to the International Energy Agency (IEA), renewables are projected to account for 80% of new power generation capacity by 2030, based on current policy settings. These substantial advancements are anticipated to further drive the demand for MOSFETs.
  • Various vendors are also significantly investing in innovating various products. For instance, in June 2023, Toshiba Electronics Europe GmbH unveiled a fresh lineup of N-channel power MOSFETs. The inaugural addition to the 600 V DTMOSVI series is the TK055U60Z1, which incorporates Toshiba's cutting-edge process featuring a super junction structure. These MOSFETs are designed for various applications, including high-efficiency switching power supplies in data centers, power conditioners for photovoltaic generators, and uninterruptible power systems.
  • In addition, there is a notable increase in the utilization of MOSFET power transistors in the aerospace and defense sectors. The global aerospace industry is experiencing substantial growth due to the rise in passenger traffic and military spending, which is expected to drive the demand for these transistors. Moreover, researchers are also exploring new application areas, leading to the development of innovative solutions. For example, in June 2023, scientists at GE Research successfully showcased SiC MOSFETs that can withstand temperatures exceeding 800o C, surpassing previous demonstrations. This breakthrough highlights the potential of SiC MOSFETs in supporting future applications in extreme operating conditions.
  • The exponential growth of the electronics and automotive industries is strongly backed by the widespread use of electronic devices among millennials, healthcare devices, and the emergence of hybrid and electric vehicles (HEVs and EVs). Additionally, the power MOSFET transistors market is expected to flourish due to continuous technological advancements and the introduction of innovative technologies. This indicates that power MOSFET transistors have immense potential to contribute to the ever-expanding electronics and vehicle sectors in the foreseeable future.
  • Additionally, discrete power MOSFETs are transistor components commonly used in industrial, automotive, and consumer settings to control high-voltage and high-current signals. The increasing need for efficient power solutions in these industries presents challenges like elevated switching frequencies, reduced sizes, lighter weights, and enhanced thermal control.
  • The widespread outbreak of COVID-19 at the beginning of 2020 resulted in significant disturbances to the supply chain and production in the market studied. Additionally, numerous end-user sectors in the market were affected by the COVID-19 pandemic, causing detrimental consequences on the market. However, with the gradual relaxation of lockdown restrictions in 2021, there was a clear surge in the demand for products incorporating MOSFETs, leading to a favorable influence on the market.

MOSFET Power Transistors Market Trends

Automotive and Transportation is Expected to Hold Significant Market Share

  • With the increasing demand for electric vehicles worldwide and to keep drivers safe, MOSFET power transistors are widely used in cars. MOSFET power transistors improve connectivity driving and safety innovation among drivers, which is expected to fuel market demand. The rapid electrification of vehicles is driving the growth of the automotive MOSFET power transistors market.
  • The growing adoption of advanced driver-assistance systems (ADAS) and increasing government regulations globally mandating ADAS are also expanding the scope of this segment. Also, the ever-increasing adoption of vehicle infotainment is expected to provide growth opportunities. However, the growing complexity of automotive digital applications requires the constant evolution of MOSFET power transistors and technologies.
  • With electrification and autonomous technologies becoming prevalent in the automotive industries, more electronic and control units are being installed, which, in turn, is driving the demand for MOSFET power transistors in the market studied. For instance, in 2022, BYD surpassed Tesla as the leading manufacturer of plug-in electric vehicles. Around 1.85 million plug-in electric vehicles were sold by BYD that year. Additionally, technological advancements, such as the implementation of AI, IoT, and favorable government standards for the production of autonomous, connected, and low-emission vehicles, are further fuelling the market's growth.
  • Furthermore, the growing demand and use cases of MOSFETs in the automotive sector also encourage the vendors to develop innovative solutions, which is anticipated to further facilitate the studied market's growth. For instance, in July 2022, Toshiba Electronic Devices & Storage Corporation announced the development of silicon carbide (SiC) MOSFETs with low on-resistance and significantly reduced switching loss. While SiC power devices are now increasingly being utilized in inverters for trains, the broader application is on the horizon, coming in vehicle electrification and the miniaturization of industrial equipment.

Asia-Pacific Expected to Witness Significant Market Share

  • Asia-Pacific is projected to account for the highest share of the MOSFET power transistors market. The growth can be attributed to factors such as the increasing adoption of consumer electronics devices, growing disposable income of consumers in the region, rising technological advancements, booming infrastructure, and rising technological advancements in the region.
  • The growth of the Asia-Pacific market is also anticipated to be influenced by factors such as the presence of several manufacturers of power MOSFET in the region, making it easy for buyers to get the product. Furthermore, the presence of a large consumer base, the expanding demand for consumer electronics products, and the steady growth of automotive industries in the region together create a market suitable for developing MOSFET power transistors.
  • In the last few decades, China has emerged as the major economy in this region owing to the rapid development of the industrial sector. According to the World Bank, the industrial sector in China has averaged almost 10% a year in the last few decades, making the country the global manufacturing hub while also driving the demand for MOSFET power transistors as they are widely used in products/equipment across various industries.
  • Furthermore, Japan also holds a significant position in the MOSFET power transistors market, home to some substantial manufacturers and the electronics and healthcare equipment industry. According to the Ministry of Finance, Japan, in 2023, exports of medical and pharmaceutical products stood at JPY 101,815 million (USD 680,086). In recent years, the company has also started focusing on luring semiconductor companies and engaging in partnerships with other nations to boost its semiconductor industry, which is anticipated to drive opportunities in the market studied.

MOSFET Power Transistors Industry Overview

The MOSFET power transistors market is moderately competitive, with many regional and global players. Various acquisitions and collaborations of large companies are expected to take place shortly, focusing on innovation. Some key market players include Analog Devices Inc., Texas Instruments, Broadcom Inc., and NXP Semiconductors.

  • October 2023: Toshiba Electronics Europe GmbH ("Toshiba") launched a pair of automotive grade 40 V N-channel power MOSFETs based upon its latest U-MOS IX-H process. The new devices use a new S-TOGLTM (Small Transistor Outline Gull-wing Leads) package that provides a number of advantages in automotive applications.
  • July 2023: Micro Commercial Components Corp. launched an innovative TO-Leadless (TOLL) package designed to enable high currents in a small N-channel MOSFET. According to the company, the four new TOLL high-power MOSFETs are smart solutions for the stringent demands of industrial applications. Additionally, these solutions are equipped with additional features to remove size as a design constraint, reduce overall component costs, and provide maximum operational efficiency.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumption and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET INSIGHTS

  • 4.1 Market Overview
  • 4.2 Industry Attractiveness - Porter's Five Forces Analysis
    • 4.2.1 Bargaining Power of Suppliers
    • 4.2.2 Bargaining Power of Buyers
    • 4.2.3 Threat of New Entrants
    • 4.2.4 Threat of Substitutes
    • 4.2.5 Intensity of Competitive Rivalry
  • 4.3 Assessment of the Impact of Macro Trends on the Market

5 MARKET DYNAMICS

  • 5.1 Market Drivers
    • 5.1.1 Rising Usage of MOSFET Power Transistor in Consumer Electronics Applications
    • 5.1.2 High Adoption of Smartphones and Tablets and Growing Requirement for MOSFET Power Transistor
  • 5.2 Market Challenges
    • 5.2.1 Complexity in the Manufacturing Process

6 MARKET SEGMENTATION

  • 6.1 By End-user Industry
    • 6.1.1 Automotive and Transportation
    • 6.1.2 Consumer Electronics
    • 6.1.3 Industrial
    • 6.1.4 Manufacturing
    • 6.1.5 Healthcare
    • 6.1.6 Aerospace and Defense
    • 6.1.7 Other End-user Industries
  • 6.2 By Geography
    • 6.2.1 North America
    • 6.2.2 Europe
    • 6.2.3 Asia-Pacific
    • 6.2.4 Latin America
    • 6.2.5 Middle East and Africa

7 COMPETITIVE LANDSCAPE

  • 7.1 Company Profiles
    • 7.1.1 Infineon Technologies AG
    • 7.1.2 Renesas Electronics Corporation
    • 7.1.3 Texas Instruments Incorporated
    • 7.1.4 Analog Devices Inc.
    • 7.1.5 Microchip Technology Inc
    • 7.1.6 NXP Semiconductors.
    • 7.1.7 Broadcom Inc.
    • 7.1.8 Mitsubishi Electric Corporation
    • 7.1.9 Toshiba Corporation
    • 7.1.10 Vishay Intertechnology Inc.

8 INVESTMENT ANALYSIS

9 FUTURE OF THE MARKET

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