EUV 포토레지스트 재료 시장 : 시장 점유율 분석, 업계 동향 및 통계, 성장 예측(2026-2031년)

According to Mordor Intelligence, the eUV photoresist materials market size is projected to expand from USD 378.18 million in 2025 and USD 434.76 million in 2026 to USD 872.93 million by 2031, registering a CAGR of 14.96% between 2026 and 2031.

This report is Segmented by Resist Type (Chemically Amplified Resists, Metal Oxide Resists, and Non-Chemically Amplified and Dry Resists), Node Compatibility (Leading Edge 3 Nm and Below, and Advanced Nodes 5 Nm To 7 Nm), End Customer Type (Pure-Play Foundries, and IDMs), and Geography (North America, Europe, Asia-Pacific, and Rest of the World). Market Forecasts are Provided in Terms of Value (USD).

Global EUV Photoresist Materials Market Trends and Insights

Rapid EUV Adoption For <=3 Nm Nodes

The migration from immersion deep-ultraviolet multi-patterning to single-pass extreme-ultraviolet exposure eliminates resolution ceilings at advanced geometries. TSMC now patterns more than 20 layers with EUV on its 2-nanometer process, almost twice the count used at 3-nanometer, which reduces total masks and process steps.Intel integrates high-NA tools that achieve 8-nanometer resolution, enabling single-exposure patterning that boosts yield and slashes defect density. Samsung's second-generation 2-nanometer technology reached 70% yields after resist optimizations cut line-edge roughness below 1.5 nanometers. Although each high-NA scanner costs about USD 350 million, fabs recover the differential by eliminating multi-patterning loops and realizing faster cycle times.

Expansion Of AI Accelerator Fab Capacity

Artificial-intelligence chips consumed most 3-nanometer wafer allocations in 2025, stretching lead times past 50 weeks. NVIDIA alone booked more than half of TSMC's advanced packaging output in 2026, swelling demand for EUV photoresist materials market volumes at both wafer and package levels. Capacity additions in Arizona, Taylor, and Ohio, backed by USD 19.2 billion in combined CHIPS Act grants and loans, pull forward resist orders even before the fabs are fully ramped. With every high-NA scanner absorbing USD 2-3 million of photoresist a year, incremental tool deployments translate directly into material consumption.

Limited EUV Scanner Availability

ASML shipped 60 systems in 2025 and plans just over 80 in 2027, yet foundry order books stretch two years ahead. Each delay deprives a fab of up to 15,000 wafers per month, forcing operators to ration photoresist purchases and injecting revenue volatility into the EUV photoresist materials market. Intel's Ohio complex slipped seven years primarily because of long-cycle high-NA tool deliveries, underscoring how monopoly equipment supply throttles regional diversification. Short-term shortages also amplify the value proposition of metal oxide and dry resists, which raise dose efficiency and stretch throughput per tool.

Other drivers and restraints analyzed in the detailed report include:

1. Dominance Of Pure-Play Foundries In Leading-Edge Logic
2. Government Subsidies For On-Shore Advanced Nodes
3. Line Edge Roughness Challenges Below 3 Nm

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

Metal oxide resists, anchored by tin-oxide cluster technology, are projected to register the strongest growth, advancing at an 18.4% CAGR through 2031. In 2025, chemically amplified products still dominated the EUV photoresist materials market size because fabs favor proven track compatibility and positive-tone polarity. Adoption momentum shifted in 2026 when Lam Research demonstrated its vapor-phase Aether platform that cuts chemical consumption by up to 25% and achieves single-print patterns below 20 nanometers.

Chemically amplified resists retain economies of scale, yet stochastic defects at sub-3-nanometer nodes compel fabs to pilot alternative chemistries. JSR and Lam Research now offer hybrid workflows that pair vapor deposition with inorganic photosensitizers, signaling a path toward positive-tone metal oxide solutions that could displace polymer incumbents within the forecast horizon. Regulatory moves by the U.S. Environmental Protection Agency and the European Chemicals Agency accelerate this pivot by capping PFAS content, incentivizing suppliers to transition to PFAS-free metal oxide and dry formulations.

Geography Analysis

North America is projected to record the fastest CAGR at 19.2% during 2026-2031 as CHIPS Act incentives accelerate three mega-fab projects: TSMC Arizona, Samsung Taylor, and Intel Ohio. Once operational, these plants will collectively add more than 400,000 leading-edge wafer starts per month, translating into an additional USD 150-200 million in annual demand for EUV photoresist materials market volumes. Regulations that establish a controlled-use pathway for PFAS in photoresists reduce compliance ambiguity and encourage local production of materials.

Asia-Pacific remains the revenue anchor, with a 37.7% share in 2025, as Taiwan and South Korea host more than 60% of the global EUV scanner fleet. Local suppliers benefit from short logistics lanes, while Japanese chemical companies are expanding production in Pyeongtaek and Ibaraki to co-locate with Samsung and TSMC. Although the region maintains its leadership, incremental share gains are likely to moderate as North American capacity scales.

Europe trails in absolute size but benefits from the EUR 43 billion European Chips Act, which aims to double the regional semiconductor share by 2030. Imec's Leuven hub and JSR's nearby manufacturing base serve as material qualification centers for future high-NA nodes built in Germany and France. Supplier interest is rising because the REACH Annex XV proposal clarifies permissible PFAS thresholds, providing the regulatory certainty needed to green-light capacity additions.

1. JSR Corporation
2. Tokyo Ohka Kogyo Co., Ltd. (TOK)
3. Fujifilm Holdings Corporation
4. Shin-Etsu Chemical Co., Ltd.
5. Brewer Science, Inc.
6. Inpria Corporation (JSR)
7. Merck KGaA (AZ Electronic Materials)
8. DuPont de Nemours, Inc.
9. Sumitomo Chemical Co., Ltd.
10. Dongjin Semichem Co., Ltd.
11. Avantama AG
12. Lam Research Corporation
13. LG Chem Ltd.
14. Arkema S.A.
15. Tokyo Electron Limited (dry resist co-development)
16. S&S Tech Corporation
17. Kayaku Advanced Materials, Inc.
18. GlobalWafers Co., Ltd.
19. Integrated Micro Materials LLC
20. Beijing Institute of Chemical Engineering (BICEM)

Additional Benefits:

• The market estimate (ME) sheet in Excel format
• 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

• 1.1 Study Assumptions and Market Definition
• 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

• 4.1 Market Overview
• 4.2 Market Drivers
  • 4.2.1 Rapid EUV Adoption for ?3 nm Nodes
  • 4.2.2 Dominance of Pure-Play Foundries in Leading-Edge Logic
  • 4.2.3 Expansion of AI Accelerator Fab Capacity
  • 4.2.4 Government Subsidies for On-shore Advanced Nodes
  • 4.2.5 Supply Chain Localization Incentives (CHIPS, K-CHIP, etc.)
  • 4.2.6 Yield Gains from Metal Oxide Dry Resists
• 4.3 Market Restraints
  • 4.3.1 Line Edge Roughness Challenges Below 3 nm
  • 4.3.2 Limited EUV Scanner Availability
  • 4.3.3 Environmental Health and Safety Concerns for MOR Chemistries
  • 4.3.4 High CoO Compared with Immersion DUV
• 4.4 Industry Value Chain Analysis
• 4.5 Regulatory Landscape
• 4.6 Technological Outlook
• 4.7 Impact of Macroeconomic Factors on the Market
• 4.8 Porter's Five Forces Analysis
  • 4.8.1 Bargaining Power of Buyers
  • 4.8.2 Bargaining Power of Suppliers
  • 4.8.3 Threat of New Entrants
  • 4.8.4 Threat of Substitutes
  • 4.8.5 Competitive Rivalry

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)

• 5.1 By Resist Type
  • 5.1.1 Chemically Amplified Resists (CAR)
  • 5.1.2 Metal Oxide Resists (MOR)
  • 5.1.3 Non-Chemically Amplified / Dry Resists
• 5.2 By Node Compatibility
  • 5.2.1 Leading Edge (3 nm and Below)
  • 5.2.2 Advanced Nodes (5 nm-7 nm)
• 5.3 By End Customer Type
  • 5.3.1 Pure-Play Foundries
  • 5.3.2 IDMs (Integrated Device Manufacturers)
• 5.4 By Geography
  • 5.4.1 North America
    • 5.4.1.1 United States
    • 5.4.1.2 Canada
    • 5.4.1.3 Mexico
  • 5.4.2 Europe
    • 5.4.2.1 United Kingdom
    • 5.4.2.2 Germany
    • 5.4.2.3 France
    • 5.4.2.4 Italy
    • 5.4.2.5 Rest of Europe
  • 5.4.3 Asia-Pacific
    • 5.4.3.1 China
    • 5.4.3.2 Japan
    • 5.4.3.3 India
    • 5.4.3.4 South Korea
    • 5.4.3.5 Rest of Asia-Pacific
  • 5.4.4 Rest of the World

6 COMPETITIVE LANDSCAPE

• 6.1 Market Concentration
• 6.2 Strategic Moves
• 6.3 Market Share Analysis
• 6.4 Company Profiles (includes Global Level Overview, Market Level Overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share, Products and Services, Recent Developments)
  • 6.4.1 JSR Corporation
  • 6.4.2 Tokyo Ohka Kogyo Co., Ltd. (TOK)
  • 6.4.3 Fujifilm Holdings Corporation
  • 6.4.4 Shin-Etsu Chemical Co., Ltd.
  • 6.4.5 Brewer Science, Inc.
  • 6.4.6 Inpria Corporation (JSR)
  • 6.4.7 Merck KGaA (AZ Electronic Materials)
  • 6.4.8 DuPont de Nemours, Inc.
  • 6.4.9 Sumitomo Chemical Co., Ltd.
  • 6.4.10 Dongjin Semichem Co., Ltd.
  • 6.4.11 Avantama AG
  • 6.4.12 Lam Research Corporation
  • 6.4.13 LG Chem Ltd.
  • 6.4.14 Arkema S.A.
  • 6.4.15 Tokyo Electron Limited (dry resist co-development)
  • 6.4.16 S&S Tech Corporation
  • 6.4.17 Kayaku Advanced Materials, Inc.
  • 6.4.18 GlobalWafers Co., Ltd.
  • 6.4.19 Integrated Micro Materials LLC
  • 6.4.20 Beijing Institute of Chemical Engineering (BICEM)

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

• 7.1 White-Space and Unmet-Need Assessment