DRAM 제조용 포토레지스트 및 EUV 포토케미컬 : 시장 점유율 분석, 업계 동향 및 통계, 성장 예측(2026-2031년)

According to Mordor Intelligence, the photoresist and EUV photochemicals market for DRAM manufacturing size is projected to expand from USD 1.01 billion in 2025 and USD 1.18 billion in 2026 to USD 2.05 billion by 2031, registering a CAGR of 11.68% between 2026 and 2031.

This report is Segmented by Wavelength (Extreme Ultraviolet, Arf Immersion, Krf, and More), Resist Chemistry (Chemically Amplified Resists, Metal-Oxide Resists, and More), Resist Tone (Positive Tone Resists, and Negative Tone Resists), DRAM Product Type (Standard DRAM, Mobile DRAM, and More), and Geography. The Market Forecasts are Provided in Terms of Value (USD).

Insights and Trends of Photoresist and EUV Photochemicals Market For DRAM Manufacturing

Rapid EUV Adoption in Advanced DRAM Patterning

Rapid EUV adoption has become the strongest growth engine in the photoresist and EUV photochemicals Market for DRAM manufacturing, as advanced DRAM now uses EUV as a recurring production tool rather than a limited process experiment. SK hynix had already expanded EUV use across successive DRAM generations, and its 1c roadmap moved to at least 5 EUV layers per wafer, which raised resist demand in a stepwise manner rather than gradually. The company also installed a TWINSCAN EXE:5200B high-NA EUV system at its Cheongju DRAM fab in September 2025, which pushed material suppliers to prepare for the next qualification cycle earlier than before. In March 2026, SK hynix disclosed a plan to buy more than 30 additional EUV scanners from ASML for KRW 11.95 trillion (USD 8.8 billion), with deliveries scheduled through 2027, and that order volume pointed to a sustained rise in wafer starts requiring qualified resist systems. Once memory customer EUV orders for 2026 were effectively sold out, the bottleneck shifted from tool demand to materials qualification, strengthening the position of suppliers already qualified and raising the near-term entry barrier for new formulations. This shift matters because the photoresist and EUV photochemicals Market for DRAM manufacturing now depends less on whether fabs want EUV and more on whether approved suppliers can scale consistent, production-grade chemistry fast enough to support each added layer.

Rising HBM Layer Complexity In AI Servers

Rising HBM complexity is lifting the quality value of the photoresist and EUV photochemicals Market for DRAM manufacturing, because AI server memory stacks demand tighter lithography control than mainstream DRAM products. HBM4 stack roadmaps are moving to higher layer counts and denser interconnect structures, and that raises sensitivity to overlay, defectivity, and line-edge control across each processing step. That pattern changes supplier economics, because a resist vendor qualified in both advanced logic and advanced memory can spread development costs across larger, high-value accounts while maintaining consistent technical performance across different customer programs. North America also became more relevant when SK hynix secured USD 458 million in CHIPS support for its HBM advanced packaging facility in West Lafayette, Indiana, creating a new premium-grade demand node that will require dependable material support close to its customer base. HBM production also makes yield more valuable, because defect losses carry a larger cost penalty on high-value stacked products than on standard commodity DRAM. As a result, the photoresist and EUV photochemicals market is not only expanding in volume through HBM, it is also moving toward a pricing structure where performance and defect control matter more than simple volume supply.

Long DRAM Fab Qualification Cycles For New Resist Chemistries

Long qualification cycles remain the most serious internal restraint on the photoresist and EUV photochemicals market for DRAM manufacturing, because technically promising materials still need extended on-wafer validation before any volume rollout. The problem is especially visible for newer chemistries such as MOR and PFAS-free CAR, where even a favorable lab result does not guarantee a fast transfer into DRAM mass production. Process integration must be checked across exposure tools, tracks, bake conditions, developers, defect maps, and yield windows, and that raises both time and cost before a supplier can secure stable commercial revenue. The result is a structural advantage for incumbent vendors that already sit inside customer flows, because every formulation change at advanced nodes can trigger additional process checks and internal approval cycles. That slows down share shifts in the photoresist and EUV photochemicals Market for DRAM manufacturing and keeps novel entrants from converting technical progress into commercial sales as quickly as demand conditions might suggest. It also explains why capital-backed incumbents are still better positioned than challengers to absorb pre-revenue development costs over multiple DRAM generations.

Other drivers and restraints analyzed in the detailed report include:

1. Multi-Patterning Demand for ArFi in Mature DRAM Layers
2. Government Fab Incentives for Local Memory Capacity
3. EUV Tool Bottlenecks Slowing Material Ramp Rates

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

ArF immersion held 61.54% of the wavelength segment of photoresist and EUV photochemicals market for DRAM manufacturing in 2025, and that large base kept it at the center of photoresist demand across most commercially produced DRAM layers. ArF immersion accounted for 61.54% of the photoresist and EUV photochemicals market for DRAM manufacturing in 2025, reflecting its role in repeated patterning flows that still dominate broad sections of the wafer process. The reason is practical, because DRAM makers still rely on SAQP and related multi-patterning methods across several layers, where ArFi remains cost-effective and operationally familiar. That installed base keeps ArFi volume resilient even as more critical layers shift toward EUV, and it prevents a rapid collapse in legacy high-volume resist demand. In the photoresist and EUV photochemicals industry, this creates a dual-track supply need where fabs continue buying large ArFi volumes while also increasing their dependence on qualified EUV materials. Suppliers with broad portfolios, therefore, remain better placed than narrow specialists, because they can support current production while qualifying future layers in parallel.

EUV was the fastest-growing wavelength segment, with a 12.67% CAGR through 2031, reflecting a steady increase in EUV layer counts across advanced DRAM roadmaps. Samsung and SK hynix had already built a meaningful high-NA EUV process base by early 2026, which gave resist vendors a clearer platform for next-step qualification and process tuning. JSR and Inpria also documented progress on both positive-tone and negative-tone MOR systems for low-NA and high-NA EUV applications, which shows that materials development is now moving alongside scanner preparation rather than trailing it. The practical effect is that EUV growth in the photoresist and EUV photochemicals Market for DRAM manufacturing is coming from layer additions rather than simple replacement of ArFi use across the whole wafer. That keeps total material intensity per wafer moving upward, because DRAM nodes are adding new EUV opportunities while still holding on to several ArFi-intensive layers for cost and process reasons in the photoresist and EUV photochemicals market for DRAM manufacturing.

Chemically amplified resists held 80.12% share of photoresist and EUV photochemicals market for DRAM manufacturing in 2025, and that lead reflected decades of co-development, process familiarity, and embedded qualification across both ArFi and current EUV use cases. Chemically amplified resists accounted for 80.12% of the photoresist and EUV photochemicals market in 2025, underscoring their deep integration with established track systems, anti-reflective layers, and developer chemistry already used in DRAM fabs. That installed position is difficult to displace because switching the resist chemistry does not affect only the coating bottle; it also affects the surrounding process stack and the customer qualification burden. Sumitomo Chemical and DuPont have continued to advance CAR development for advanced lithography, and DuPont's Qnity team presented work on PFAS alternatives for ArF resist at SPIE in 2025, demonstrating that incumbent chemistry families are still evolving rather than standing still. This matters for the photoresist and EUV photochemicals market because CAR remains the volume foundation that funds the transition into newer chemistry platforms. It also means customers are likely to adopt cleaner or more compliant CAR formulations first across many layers before shifting larger shares of flow to less-proven material classes.

Metal-oxide resists were the fastest-growing chemistry segment, of the photoresist and EUV photochemicals market for DRAM manufacturing, at a 13.07% CAGR over 2026-2031, driven by their stronger EUV photon absorption and their improving throughput profile. Imec showed in February 2026 that an oxygen-enriched post-exposure bake environment improved MOR photo-speed by 15-20%, which directly reduced dose needs and improved scanner productivity under EUV conditions. That result mattered because throughput has been one of the main barriers to wider MOR use, and any dose reduction makes the material case stronger at expensive advanced nodes. JSR's May 2026 cross-licensing agreement with Entegris also showed that MOR competition is moving beyond chemistry alone and into precursor synthesis, filtration, and clean delivery infrastructure. IBM research presented through SPIE 2025 added further support by showing hardware-assisted MOR patterning progress at fine pitches relevant to advanced manufacturing needs. In the photoresist and EUV photochemicals market, MOR is still smaller than CAR today, but its momentum is now tied to measurable process gains rather than to only theoretical promise.

Complete Report Scope:

• By Wavelength
  • Extreme Ultraviolet (EUV)
  • ArF Immersion (ArFi)
  • KrF
  • I-Line/G-Line
• By Resist Chemistry
  • Chemically Amplified Resists (CAR)
  • Metal-Oxide Resists (MOR)
  • Non-CAR Organic Resists
• By Resist Tone
  • Positive Tone Resists
  • Negative Tone Resists
• By DRAM Product Type
  • Standard DRAM
  • Mobile DRAM (LPDDR)
  • Graphics DRAM (GDDR)
  • High Bandwidth Memory (HBM)
  • Server DRAM
  • Other DRAM Product Types
• By Geography
  • North America
  • Europe
  • Asia-Pacific
    • China
    • Japan
    • South Korea
    • Taiwan
    • Rest of Asia-Pacific
  • Rest of the World

Geography Analysis

Asia-Pacific accounted for 88.42% of thephotoresist and EUV photochemicals market for DRAM manufacturing industry in 2025, reflecting the close link between DRAM wafer production and resist manufacturing capacity in South Korea, Japan, and Taiwan. Asia-Pacific accounted for 88.42% of the photoresist and EUV photochemicals market in 2025, making the region the clear center of both consumption and supply. South Korea remained the largest national demand base because Samsung Electronics and SK Hynix continued to anchor advanced DRAM output and forward EUV investment. SK hynix strengthened that outlook in March 2026 when it disclosed its KRW 11.95 trillion (USD 8.8 billion) EUV scanner purchase plan through 2027, which supported a longer visible demand pipeline for qualified materials. Japan remained just as important on the supply side, as TOK, JSR, Shin-Etsu Chemical, Sumitomo Chemical, and Fujifilm continued to operate dense R&D and production networks for semiconductor materials, including new domestic investment from Shin-Etsu in Isesaki.

North America was the fastest-growing geography, with a 12.56% CAGR over 2026-2031, reflecting a new phase of DRAM manufacturing investment rather than a typical capacity refresh cycle. Micron's Idaho and New York projects, backed by up to USD 6.4 billion in CHIPS support, created the strongest long-term case for domestic memory materials demand in the region. SK hynix also added a premium demand point through its USD 458 million supported HBM packaging project in Indiana, while Samsung's Texas investment widened the broader semiconductor materials opportunity across the United States. This new build-out matters because the photoresist and EUV photochemicals market in North America is being shaped by domestic qualification, PFAS scrutiny, and supply chain traceability requirements more than by legacy installed capacity.

Europe held a modest share, but it remained strategically important because much of the region's influence came through process development rather than through direct DRAM wafer volume. Imec's NanoIC and EUV research programs in Belgium continued to support resist co-development, and the institute's February 2026 MOR work showed a 15-20% photo-speed improvement under oxygen-enriched post-exposure bake conditions. That gave Europe an outsized role in advancing next-generation lithography readiness even without a comparable share of global DRAM output. The Rest of the World remained negligible for current DRAM photoresist demand, because emerging fab plans outside the main clusters have not yet reached the scale needed to materially change near-term purchasing patterns in the photoresist and EUV photochemicals market for DRAM manufacturing.

1. Tokyo Ohka Kogyo Co., Ltd.
2. JSR Corporation
3. Shin-Etsu Chemical Co., Ltd.
4. FUJIFILM Holdings Corporation
5. Sumitomo Chemical Co., Ltd.
6. DuPont de Nemours, Inc.
7. Merck KGaA
8. Dongjin Semichem Co., Ltd.
9. Brewer Science, Inc.
10. Inpria Corporation
11. Lam Research Corporation
12. Allresist GmbH
13. micro resist technology GmbH
14. Microchemicals GmbH
15. Eternal Materials Co., Ltd.
16. Jiangsu Nata Opto-electronic Material Co., Ltd.
17. Hubei Dinglong Co., Ltd.
18. S&S Tech Corporation

Additional Benefits:

• The market estimate (ME) sheet in Excel format
• 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

• 1.1 Study Assumptions and Market Definition
• 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

• 4.1 Market Overview
• 4.2 Market Drivers
  • 4.2.1 Rapid EUV Adoption in Advanced DRAM Patterning
  • 4.2.2 Rising HBM Layer Complexity In AI Servers
  • 4.2.3 Multi-Patterning Demand for ArFi In Mature DRAM Layers
  • 4.2.4 Government Fab Incentives for Local Memory Capacity
  • 4.2.5 PFAS-Free Reformulation Pull In Semiconductor Materials
  • 4.2.6 Dry Resist and Metal-Oxide Throughput Gains
• 4.3 Market Restraints
  • 4.3.1 Long DRAM Fab Qualification Cycles for New Resist Chemistries
  • 4.3.2 EUV Tool Bottlenecks Slowing Material Ramp Rates
  • 4.3.3 High Purity and Defectivity Requirements Raising Cost of Entry
  • 4.3.4 Export Controls and Raw Material Concentration Risk
• 4.4 Industry Value Chain Analysis
• 4.5 Regulatory Landscape
• 4.6 Technological Outlook
• 4.7 Impact of Macroeconomic Factors on the Market
• 4.8 Porter's Five Forces Analysis
  • 4.8.1 Threat of New Entrants
  • 4.8.2 Bargaining Power of Buyers
  • 4.8.3 Bargaining Power of Suppliers
  • 4.8.4 Threat of Substitutes
  • 4.8.5 Industry Rivalry

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)

• 5.1 By Wavelength
  • 5.1.1 Extreme Ultraviolet (EUV)
  • 5.1.2 ArF Immersion (ArFi)
  • 5.1.3 KrF
  • 5.1.4 I-Line/G-Line
• 5.2 By Resist Chemistry
  • 5.2.1 Chemically Amplified Resists (CAR)
  • 5.2.2 Metal-Oxide Resists (MOR)
  • 5.2.3 Non-CAR Organic Resists
• 5.3 By Resist Tone
  • 5.3.1 Positive Tone Resists
  • 5.3.2 Negative Tone Resists
• 5.4 By DRAM Product Type
  • 5.4.1 Standard DRAM
  • 5.4.2 Mobile DRAM (LPDDR)
  • 5.4.3 Graphics DRAM (GDDR)
  • 5.4.4 High Bandwidth Memory (HBM)
  • 5.4.5 Server DRAM
  • 5.4.6 Other DRAM Product Types
• 5.5 By Geography
  • 5.5.1 North America
  • 5.5.2 Europe
  • 5.5.3 Asia-Pacific
    • 5.5.3.1 China
    • 5.5.3.2 Japan
    • 5.5.3.3 South Korea
    • 5.5.3.4 Taiwan
    • 5.5.3.5 Rest of Asia-Pacific
  • 5.5.4 Rest of the World

6 COMPETITIVE LANDSCAPE

• 6.1 Market Concentration
• 6.2 Strategic Moves
• 6.3 Market Share Analysis
• 6.4 Company Profiles (includes Global Level Overview, Market Level Overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share, Products and Services, Recent Developments)
  • 6.4.1 Tokyo Ohka Kogyo Co., Ltd.
  • 6.4.2 JSR Corporation
  • 6.4.3 Shin-Etsu Chemical Co., Ltd.
  • 6.4.4 FUJIFILM Holdings Corporation
  • 6.4.5 Sumitomo Chemical Co., Ltd.
  • 6.4.6 DuPont de Nemours, Inc.
  • 6.4.7 Merck KGaA
  • 6.4.8 Dongjin Semichem Co., Ltd.
  • 6.4.9 Brewer Science, Inc.
  • 6.4.10 Inpria Corporation
  • 6.4.11 Lam Research Corporation
  • 6.4.12 Allresist GmbH
  • 6.4.13 micro resist technology GmbH
  • 6.4.14 Microchemicals GmbH
  • 6.4.15 Eternal Materials Co., Ltd.
  • 6.4.16 Jiangsu Nata Opto-electronic Material Co., Ltd.
  • 6.4.17 Hubei Dinglong Co., Ltd.
  • 6.4.18 S&S Tech Corporation

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

• 7.1 White-Space and Unmet-Need Assessment