HBM용 실리콘 관통 전극(TSV) 기술 및 장비 시장 : 시장 점유율 분석, 업계 동향 및 통계, 성장 예측(2026-2031년)

According to Mordor Intelligence, the HBM through-Silicon via (TSV) technology and equipment market size is expected to increase from USD 0.45 billion in 2025 to USD 0.57 billion in 2026 and reach USD 1.88 billion by 2031, growing at a CAGR of 26.96% over 2026-2031.

This report is Segmented by Offering (Equipment, and More), TSV Process Type (Via-First TSV, and More), Bonding Technology (Direct Copper Bonding, and More), Application (AI Accelerators, and More), End User (OSATs, and More), Wafer Size (200 Mm, and More), Integration (Wafer-To-Wafer, and More), and Geography. The Market Forecasts are Provided in Terms of Value (USD).

Global HBM Through-Silicon Via (TSV) Technology and Equipment Market Trends and Insights

AI Accelerator HBM Stack Density Expansion

Every major AI compute program now depends on HBM, so TSV performance has become a direct supply constraint for advanced accelerator packages. The HBM4 roadmap targets 12-16 Gbps per pin, 1.5-2.0 TB/s bandwidth per stack, and up to 128 GB through 16-layer stacking, which keeps pressure on via-middle integration, etch control, and stacking yield. Samsung Electronics confirmed in June 2026 that it had shipped commercial HBM4 memory, which shows that the next production cycle has already moved into live customer supply. As stack height rises, the HBM Through-Silicon Via (TSV) technology and equipment market must support thinner dies, tighter alignment, cleaner copper fill, and more repeatable bonding windows across each layer. That is why capacity spending remains front-loaded into tools, because a missed yield target at the TSV or bonding stage can slow the output of the full memory stack rather than a single process step. The result is that the HBM Through-Silicon Via (TSV) technology and equipment market is growing in line with AI demand, but it is doing so under harder manufacturing conditions than earlier HBM generations.

Transition From Microbump to Hybrid Bonding in HBM4 and Beyond

The shift from microbump-based interconnects to hybrid bonding is changing how vendors plan the next equipment cycle, even before full volume adoption becomes standard. A 2025 review in Electronics reported that Cu-Cu hybrid bonding can lower joint thermal resistance by 20% versus MR-MUF while also improving I/O resistance and capacitance at finer pitch. Samsung Electronics stated in June 2026 that it plans to use hybrid copper bonding from 16-layer HBM4E and then move further with HBM5, which gives the equipment base a clear direction even if the timing remains staggered by customer program. Imec and EV Group also demonstrated wafer-to-wafer hybrid bonding at 200 nm Cu interconnect pitch in May 2026, which confirms that the technology path is advancing toward very fine interconnect density. For the HBM Through-Silicon Via (TSV) technology and equipment market, this creates a two-speed demand pattern where thermocompression tools remain essential now, while hybrid bonding tools, surface preparation systems, and related materials move through qualification and line planning. That overlap matters because suppliers that win early qualification slots can influence future process standards long before high-volume ramps start.

High Capex for End-To-End TSV Toolchains

The HBM Through-Silicon Via (TSV) technology and equipment market remains difficult to enter because an HBM-grade line needs a full set of advanced tools rather than a single bottleneck machine. Applied Materials' June 2026 launch covered TSV reveal, copper plating, dielectric deposition, and advanced inspection, which shows how many process layers must be funded together before a line becomes competitive. EV Group and SUSS MicroTec also continued to expand bonding and die-to-wafer platforms in 2025 and 2026, which underlines that no entrant can rely on a narrow tool footprint if it wants to support modern HBM assembly. That broad requirement pushes total line spending into a level that only a few memory makers, foundries, and top-tier packaging specialists can manage with confidence. It also makes timing more difficult, because customers must commit capital before it is fully clear how quickly hybrid bonding will move from qualification into large-scale production. The restraint is not just the size of the check, it is the risk of funding the wrong mix of tools for the next HBM generation.

Other drivers and restraints analyzed in the detailed report include:

1. Advanced Packaging Capacity Additions by Foundries and OSATs
2. Domestic Semiconductor Subsidies for Advanced Packaging Buildouts
3. Thermal Stress and Keep-Out Zone Design Constraints

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

Equipment held 77.12% of revenue in 2025, which kept the largest share of spending concentrated in the tool base that enables etch, fill, thinning, bonding, and inspection across the production flow. In revenue terms, that position reflects how the HBM Through-Silicon Via (TSV) technology and equipment market still depends on each process step being too specialized to commoditize. Applied Materials said in June 2026 that it expects packaging revenue to exceed USD 2 billion in 2026 and introduced the Opta Quad CMP platform, Nokota VMax 2 ECD, and Producer Avila 2 PECVD to support TSV reveal, copper plating, and dielectric deposition. That launch makes clear that equipment leadership is not based on one machine category, but on the ability to cover multiple high-yield process steps with tightly integrated performance. The dominance of equipment also shows why new capacity plans remain vulnerable to lead times, because missing one critical tool can delay a full production ramp.

Materials are the fastest-growing offering at a 27.56% CAGR through 2031, which signals a change in where process difficulty is starting to migrate. As via dimensions move toward finer critical dimensions and bonding conditions become stricter, materials now carry more of the burden for thermal stability, copper purity, surface preparation, and temporary bonding performance. That shift does not remove the central role of tools, but it raises the value of specialized consumables that can stabilize yield under more aggressive process windows. Services remain the smallest part of the HBM Through-Silicon Via (TSV) technology and equipment market, yet they are becoming more important as vendors provide process tuning, integration support, and yield improvement work alongside equipment delivery. This matters because services can move practical know-how from the customer floor back into the vendor ecosystem, which can shape later buying decisions. The offering mix therefore still favors tools today, but it is slowly moving toward a more balanced model where equipment, materials, and integration support reinforce one another.

Via-middle captured 62.52% of process-type revenue in 2025, which shows that the HBM Through-Silicon Via (TSV) technology and equipment market remains centered on the process architecture already embedded in commercial HBM manufacturing. The same segment is projected to expand at a 27.51% CAGR through 2031, which means growth is coming from more capacity on the same process foundation rather than from a broad shift into a different TSV sequence. Future Memory Storage Conference material from 2025 showed that major HBM suppliers have standardized on via-middle TSV in production, which explains why its installed base remains strong. That standardization matters because it locks in not only process preference, but also the surrounding tool stack, operator know-how, and yield optimization routines. Once those elements are mature, customers become less willing to switch unless a new method offers a very clear gain in cost, density, or reliability.

Via-first remains relevant in narrower use cases where through-wafer connectivity must be built before later processing, especially in areas outside the main HBM volume base. Via-last still has a place in interposer and selected heterogeneous integration work where process flexibility can matter more than the dense vertical pitch needed in memory stacking. Neither of those routes has enough current pull to displace via-middle in the near term, because HBM production is where the largest commercial volumes continue to sit. This leaves the HBM Through-Silicon Via (TSV) technology and equipment market in a position where process innovation must often happen inside the via-middle framework rather than outside it. Vendors therefore compete by improving etch profile control, copper fill quality, wafer thinning stability, and downstream bonding compatibility instead of trying to replace the full architecture. The result is a market that looks dynamic from a revenue perspective, but structurally conservative in the process path that supports most of that growth.

Thermocompression bonding held 69.74% of revenue in 2025, which kept the largest installed base aligned with the method that has supported HBM2E through HBM3E production and remains central to current supply. That share shows how the HBM Through-Silicon Via (TSV) technology and equipment market still relies on process stability where commercial volume is already proven. Hybrid bonding is the fastest-growing technology at a 27.76% CAGR through 2031, reflecting the push toward finer pitch and lower thermal resistance in taller memory stacks. The 2025 Electronics review outlined why hybrid bonding is attractive for future HBM designs, especially where improved thermal and electrical performance becomes necessary at smaller pitch. Samsung Electronics also confirmed a roadmap that uses hybrid copper bonding from 16-layer HBM4E onward, which gives the segment a defined commercial direction even if the transition will not happen in one step.

The installed thermocompression base still matters because most near-term HBM output cannot wait for full hybrid conversion. That is why the HBM Through-Silicon Via (TSV) technology and equipment market is not seeing a clean replacement cycle, but a period where both technologies stay important for different production windows. BESI reported that Q1 2026 orders rose 104.5% year over year with hybrid bonding demand from multiple customers, which suggests that qualification activity is already translating into real capital commitments. Imec and EV Group's 200 nm wafer-to-wafer demonstration also shows how far pitch scaling can go when the process is optimized for future integration density. Micro-bump and direct copper bonding still serve narrower roles, but the main competitive question now is which vendors can support present thermocompression needs while securing future hybrid bonding positions. That balance is likely to decide which suppliers stay embedded when memory stacks move beyond current layer counts.

Complete Report Scope:

• By Offering
  • Equipment
  • Materials
  • Services
• By TSV Process Type
  • Via-First TSV
  • Via-Middle TSV
  • Via-Last TSV
• By Bonding Technology
  • Thermocompression Bonding
  • Hybrid Bonding
  • Micro-Bump Bonding
  • Direct Copper Bonding
• By Application
  • High Bandwidth Memory
  • AI Accelerators
  • GPU Packages
  • HPC Processors
  • Chiplet-Based Processors
  • Other Advanced Packaging Applications
• By End User
  • Memory Manufacturers
  • Foundries
  • Integrated Device Manufacturers (IDMs)
  • OSATs
  • Research Institutes
• By Wafer Size
  • 200 mm
  • 300 mm
  • Other Wafer Sizes
• By Integration
  • Wafer-to-Wafer
  • Die-to-Wafer
  • Die-to-Die
• By Geography
  • North America
    • United States
    • Canada
    • Mexico
  • Europe
    • Germany
    • United Kingdom
    • France
    • Italy
    • Rest of Europe
  • Asia-Pacific
    • China
    • Japan
    • South Korea
    • Taiwan
    • India
    • Rest of Asia-Pacific
  • South America
  • Middle East and Africa

Geography Analysis

Asia-Pacific held 77.83% of the HBM Through-Silicon Via (TSV) technology and equipment market share in 2025 and is projected to expand at a 27.94% CAGR through 2031. That dual position reflects the fact that the region combines memory production, foundry packaging, OSAT support, and equipment supply in one interconnected footprint. South Korea remains central because Samsung Electronics and SK hynix anchor commercial HBM output, and the country also continues to back packaging capability through targeted public support. Taiwan strengthens the regional position through its foundry and OSAT base, which supports broader advanced packaging demand tied to AI compute programs. Japan remains important as an equipment and process ecosystem contributor, which helps keep Asia-Pacific ahead not only in output but also in tool availability and production readiness.

North America held a smaller position in 2025, but it is becoming more important as a funding, equipment, and future packaging capacity base for the HBM Through-Silicon Via (TSV) technology and equipment market. The U.S. government finalized USD 1.4 billion in CHIPS packaging awards in January 2025, which gave the region a stronger platform for prototyping, pilot production, and process development. The same policy direction supported up to USD 458 million for SK hynix's Indiana project, linking public support to future HBM packaging capability inside the United States. KLA said its advanced packaging revenue was expected to rise from around USD 635 million in 2025 to around USD 1 billion in 2026, which shows how North American toolmakers are capturing value from this buildout cycle.

Europe maintained a specialized role in 2025, led by equipment vendors rather than large-scale HBM production lines. SUSS MicroTec and EV Group remain the main regional names in bonding and integration tools, and both stayed active in 2025 and 2026 through product and technology announcements. This gives Europe an important technical position inside the HBM Through-Silicon Via (TSV) technology and equipment market even though its manufacturing base is narrower than Asia-Pacific's. South America and the Middle East and Africa remained at an early stage, with limited direct participation in TSV production and stronger relevance as downstream users of AI hardware than as core sources of HBM packaging capacity.

1. Applied Materials, Inc.
2. Lam Research Corporation
3. Tokyo Electron Limited
4. EV Group
5. ASM International N.V.
6. BESI
7. Hanmi Semiconductor Co., Ltd.
8. SEMES Co., Ltd.
9. SK hynix Inc.
10. Samsung Electronics Co., Ltd.
11. Micron Technology, Inc.
12. Taiwan Semiconductor Manufacturing Company Limited
13. Intel Corporation
14. Amkor Technology, Inc.
15. ASE Technology Holding Co., Ltd.
16. Powertech Technology Inc.
17. Siliconware Precision Industries Co., Ltd.
18. JCET Group Co., Ltd.
19. Onto Innovation Inc.
20. KLA Corporation
21. SCREEN Holdings Co., Ltd.
22. DISCO Corporation
23. Plasma-Therm
24. Cohu, Inc.
25. SUSS MicroTec SE
26. Shinkawa Ltd.
27. Brewer Science, Inc.

Additional Benefits:

• The market estimate (ME) sheet in Excel format
• 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

• 1.1 Study Assumptions and Market Definition
• 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

• 4.1 Market Overview
• 4.2 Impact of Macroeconomic Factors on the Market
• 4.3 Market Drivers
  • 4.3.1 AI Accelerator HBM Stack Density Expansion
  • 4.3.2 Transition From Microbump to Hybrid Bonding in HBM4 and Beyond
  • 4.3.3 Advanced Packaging Capacity Additions by Foundries and OSATs
  • 4.3.4 Domestic Semiconductor Subsidies for Advanced Packaging Buildouts
  • 4.3.5 Yield Learning Curves in High-Aspect-Ratio TSV Etch and Fill
  • 4.3.6 Real-Time Metrology and In-Line Process Control Adoption
• 4.4 Market Restraints
  • 4.4.1 High Capex for End-to-End TSV Toolchains
  • 4.4.2 Thermal Stress and Keep-Out Zone Design Constraints
  • 4.4.3 Yield Loss Risk in High-Density Via Fill and Reveal Steps
  • 4.4.4 Tool Qualification Complexity Across Multi-Vendor HBM Supply Chains
• 4.5 Supply Chain Analysis
• 4.6 Regulatory Landscape
• 4.7 Technological Outlook
• 4.8 Porter's Five Forces Analysis
  • 4.8.1 Bargaining Power of Suppliers
  • 4.8.2 Bargaining Power of Buyers
  • 4.8.3 Threat of New Entrants
  • 4.8.4 Threat of Substitutes
  • 4.8.5 Intensity of Competitive Rivalry

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)

• 5.1 By Offering
  • 5.1.1 Equipment
  • 5.1.2 Materials
  • 5.1.3 Services
• 5.2 By TSV Process Type
  • 5.2.1 Via-First TSV
  • 5.2.2 Via-Middle TSV
  • 5.2.3 Via-Last TSV
• 5.3 By Bonding Technology
  • 5.3.1 Thermocompression Bonding
  • 5.3.2 Hybrid Bonding
  • 5.3.3 Micro-Bump Bonding
  • 5.3.4 Direct Copper Bonding
• 5.4 By Application
  • 5.4.1 High Bandwidth Memory
  • 5.4.2 AI Accelerators
  • 5.4.3 GPU Packages
  • 5.4.4 HPC Processors
  • 5.4.5 Chiplet-Based Processors
  • 5.4.6 Other Advanced Packaging Applications
• 5.5 By End User
  • 5.5.1 Memory Manufacturers
  • 5.5.2 Foundries
  • 5.5.3 Integrated Device Manufacturers (IDMs)
  • 5.5.4 OSATs
  • 5.5.5 Research Institutes
• 5.6 By Wafer Size
  • 5.6.1 200 mm
  • 5.6.2 300 mm
  • 5.6.3 Other Wafer Sizes
• 5.7 By Integration
  • 5.7.1 Wafer-to-Wafer
  • 5.7.2 Die-to-Wafer
  • 5.7.3 Die-to-Die
• 5.8 By Geography
  • 5.8.1 North America
    • 5.8.1.1 United States
    • 5.8.1.2 Canada
    • 5.8.1.3 Mexico
  • 5.8.2 Europe
    • 5.8.2.1 Germany
    • 5.8.2.2 United Kingdom
    • 5.8.2.3 France
    • 5.8.2.4 Italy
    • 5.8.2.5 Rest of Europe
  • 5.8.3 Asia-Pacific
    • 5.8.3.1 China
    • 5.8.3.2 Japan
    • 5.8.3.3 South Korea
    • 5.8.3.4 Taiwan
    • 5.8.3.5 India
    • 5.8.3.6 Rest of Asia-Pacific
  • 5.8.4 South America
  • 5.8.5 Middle East and Africa

6 COMPETITIVE LANDSCAPE

• 6.1 Market Concentration
• 6.2 Strategic Moves
• 6.3 Market Share Analysis
• 6.4 Company Profiles (includes Global Level Overview, Market Level Overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share, Products and Services, Recent Developments)
  • 6.4.1 Applied Materials, Inc.
  • 6.4.2 Lam Research Corporation
  • 6.4.3 Tokyo Electron Limited
  • 6.4.4 EV Group
  • 6.4.5 ASM International N.V.
  • 6.4.6 BESI
  • 6.4.7 Hanmi Semiconductor Co., Ltd.
  • 6.4.8 SEMES Co., Ltd.
  • 6.4.9 SK hynix Inc.
  • 6.4.10 Samsung Electronics Co., Ltd.
  • 6.4.11 Micron Technology, Inc.
  • 6.4.12 Taiwan Semiconductor Manufacturing Company Limited
  • 6.4.13 Intel Corporation
  • 6.4.14 Amkor Technology, Inc.
  • 6.4.15 ASE Technology Holding Co., Ltd.
  • 6.4.16 Powertech Technology Inc.
  • 6.4.17 Siliconware Precision Industries Co., Ltd.
  • 6.4.18 JCET Group Co., Ltd.
  • 6.4.19 Onto Innovation Inc.
  • 6.4.20 KLA Corporation
  • 6.4.21 SCREEN Holdings Co., Ltd.
  • 6.4.22 DISCO Corporation
  • 6.4.23 Plasma-Therm
  • 6.4.24 Cohu, Inc.
  • 6.4.25 SUSS MicroTec SE
  • 6.4.26 Shinkawa Ltd.
  • 6.4.27 Brewer Science, Inc.

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

• 7.1 White-Space and Unmet-Need Assessment