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¼¼°èÀÇ DRAM(Dynamic RAM) ½ÃÀå Àü¸Á(-2030³â) : À¯Çü, ±â¼ú, ¿ëµµ ¹× Áö¿ªº° ºÐ¼®

Dynamic Random Access Memory Market Forecasts to 2030 - Global Analysis By Type, Technology (Double Data Rate 3, Double Data Rate 4, Double Data Rate 5, Double Data Rate 2 and Other Technologies) Application and By Geography

¹ßÇàÀÏ: | ¸®¼­Ä¡»ç: Stratistics Market Research Consulting | ÆäÀÌÁö Á¤º¸: ¿µ¹® 175+ Pages | ¹è¼Û¾È³» : 2-3ÀÏ (¿µ¾÷ÀÏ ±âÁØ)

    
    
    



¡Ø º» »óǰÀº ¿µ¹® ÀÚ·á·Î Çѱ۰ú ¿µ¹® ¸ñÂ÷¿¡ ºÒÀÏÄ¡ÇÏ´Â ³»¿ëÀÌ ÀÖÀ» °æ¿ì ¿µ¹®À» ¿ì¼±ÇÕ´Ï´Ù. Á¤È®ÇÑ °ËÅ並 À§ÇØ ¿µ¹® ¸ñÂ÷¸¦ Âü°íÇØÁֽñ⠹ٶø´Ï´Ù.

Stratistics MRC¿¡ µû¸£¸é, DRAM(Dynamic RAM) ¼¼°è ½ÃÀåÀº 2023³â 1,231¾ï ´Þ·¯, 2030³â¿¡´Â 3,376¾ï ´Þ·¯¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹»óµÇ¸ç, ¿¹Ãø ±â°£ µ¿¾È 15.5%ÀÇ ¿¬Æò±Õ º¹ÇÕ ¼ºÀå·ü(CAGR)À» ³ªÅ¸³¾ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.

°¢ ºñÆ®ÀÇ µ¥ÀÌÅÍ´Â DRAM(Dynamic RAM)À̶ó´Â ¹ÝµµÃ¼ ¸Þ¸ð¸®¿¡ ÀÇÇØ ¸Þ¸ð¸® ¼¿¿¡ ÀúÀåµË´Ï´Ù. ÁýÀûȸ·ÎÀÇ Ä¿ÆÐ½ÃÅÍ¿¡ µ¥ÀÌÅÍ´Â ÀüÇÏÀÇ ¿­·Î ÀúÀåµË´Ï´Ù. ´ëÇ¥ÀûÀÎ ·£´ý ¾×¼¼½º ¸Þ¸ð¸®(RAM)ÀÇ ÀÏÁ¾À¸·Î ¿öÅ©½ºÅ×À̼Ç, ¼­¹ö, ¸ð¹ÙÀÏ ±â±â, ½º¸¶Æ®Æù, ÅÂºí¸´PC µî¿¡ »ç¿ëµÇ¸ç, Æ®·£Áö½ºÅͰ¡ Çϳª¸¸ ÇÊ¿äÇÑ ´Ü¼øÇÑ ¼³°è·Î ÇÁ·Î±×·¥ ½ÇÇà Áß¿¡ ¸Þ¸ð¸®¸¦ ¾÷µ¥ÀÌÆ®Çϰųª »èÁ¦ÇÒ ¼ö ÀÖ½À´Ï´Ù. ÇÒ ¼ö ÀÖ½À´Ï´Ù.

GSMA¿¡ µû¸£¸é, 5G´Â 2025³â±îÁö ¹Ì±¹À» ¼±µµÇÏ´Â ³×Æ®¿öÅ© ±â¼úÀÌ µÉ °ÍÀ̸ç, 5G´Â ªÀº ½Ã°£¿¡ ¹æ´ëÇÑ ¾çÀÇ Åë½Å µ¥ÀÌÅ͸¦ Àü¼ÛÇÒ ¼ö Àֱ⠶§¹®¿¡ ±â±â¿¡ ´õ ¸¹Àº ÀúÀå°ø°£ÀÌ ÇÊ¿äÇÏ°Ô µÉ °ÍÀÔ´Ï´Ù.

½ÃÀå ¿ªÇÐ :

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  • ¿Â¶óÀÎ °ÔÀÓ¿¡ ´ëÇÑ °ü½É Áõ°¡
  • ¿Â¶óÀÎ °ÔÀÓÀÇ ¸ôÀÔÇü °æÇèÀ» À§Çؼ­´Â ¿øÈ°ÇÑ °ÔÀÓ Ç÷¹ÀÌ, È¿À²ÀûÀÎ ·Îµù ½Ã°£, °í±Þ ±×·¡ÇÈÀ» À§ÇÑ ´ë¿ë·® ¸Þ¸ð¸®°¡ ÇÊ¿äÇÕ´Ï´Ù. °ÔÀÓÀÇ ÀαⰡ ±ÞÁõÇÔ¿¡ µû¶ó ÃæºÐÇÑ DRAMÀ» °®Ãá °­·ÂÇÑ °ÔÀÓ ½Ã½ºÅÛ ¹× ÀåÄ¡¿¡ ´ëÇÑ Çʿ伺ÀÌ Áõ°¡Çϰí ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ Ãß¼¼´Â °í¼º´É ¸Þ¸ð¸® ¼Ö·ç¼Ç¿¡ ´ëÇÑ ¼ö¿ä¸¦ ÃËÁøÇϰí, °ÔÀ̸ӵéÀÇ ¿ä±¸»çÇ×À» ÃæÁ·ÇÏ´Â DRAM ±â¼ú Çõ½ÅÀ» ÃËÁøÇÏ¿© DRAM ½ÃÀåÀÇ ¼ºÀå°ú ±âȸ¸¦ ÃËÁøÇϰí ÀÖ½À´Ï´Ù.

¾ïÁ¦¿äÀÎ

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  • ¼º´É ¹× ¸Þ¸ð¸® ¿ë·® Çâ»ó¿¡ ´ëÇÑ ¿ä±¸°¡ ³ô¾ÆÁü¿¡ µû¶ó, ÀåÄ¡ÀÇ ¹ß¿­, ¹èÅ͸® ¼ö¸í ¹× Àü¹ÝÀûÀÎ ¿¡³ÊÁö È¿À²¿¡ ¾Ç¿µÇâÀ» ¹ÌÄ¡´Â Àü·Â ¼Òºñ Áõ°¡¿¡ ´ëÇÑ ¿ì·Á°¡ Ä¿Áö°í ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ ¹®Á¦¸¦ ÇØ°áÇϱâ À§ÇØ ÀúÀü·Â DRAM ±â¼ú ¹× ¾ÆÅ°ÅØÃ³ÀÇ Çõ½ÅÀÌ ¿ä±¸µÇ°í ÀÖ½À´Ï´Ù. ÃÖÀûÀÇ ¼º´ÉÀ» À¯ÁöÇϸ鼭 Àü·Â ¼Òºñ¸¦ ÁÙÀÌ´Â °ÍÀº ¿¡³ÊÁö È¿À²ÀÌ ³ôÀº µð¹ÙÀ̽º¿ÍÀÇ È£È¯¼ºÀ» º¸ÀåÇϰí ȯ°æ ģȭÀûÀÎ ±â¼ú ¼Ö·ç¼ÇÀÇ Á߿伺ÀÌ ³ô¾ÆÁö´Â °¡¿îµ¥ ½ÃÀå ¼ºÀåÀ» À¯ÁöÇÏ´Â µ¥ ¸Å¿ì Áß¿äÇÕ´Ï´Ù.

±âȸ :

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  • ±³À°ÀÇ µðÁöÅÐ Ç÷§ÆûÈ­°¡ ÁøÇàµÊ¿¡ µû¶ó ¿Â¶óÀÎ °­ÁÂ, µ¿¿µ»ó °­ÀÇ, ÀÎÅÍ·¢Æ¼ºê ÄÁÅÙÃ÷¿¡ ´ëÀÀÇÒ ¼ö ÀÖ´Â ±â±â¿¡ ´ëÇÑ ¼ö¿ä°¡ Áõ°¡Çϰí ÀÖ½À´Ï´Ù. ¿øÈ°ÇÑ ¸ÖƼŽºÅ·, ºü¸¥ ÄÁÅÙÃ÷ ·Îµù, ¿øÈ°ÇÑ »ç¿ëÀÚ °æÇèÀ» Áö¿øÇÏ´Â DRAMÀÇ ¿ªÇÒÀº ÀÌ·¯´× ȯ°æÀ» °­È­ÇÏ´Â µ¥ ÀÖ¾î ¸Å¿ì Áß¿äÇÕ´Ï´Ù. ±â¼ú ±â¹Ý ±³À°¿¡ ´ëÇÑ ÀÇÁ¸µµ°¡ ³ô¾ÆÁü¿¡ µû¶ó ¸Þ¸ð¸® ¿ë·® Áõ°¡, µ¥ÀÌÅÍ Ã³¸® ¼Óµµ Çâ»ó µî À¯¸®ÇÑ ½ÃÀå ȯ°æÀÌ Á¶¼ºµÇ¾î ÃֽŠÀÌ·¯´× Ç÷§ÆûÀÇ ¿ä±¸ »çÇ×À» ÃæÁ·Çϴ ÷´Ü DRAM ¼Ö·ç¼ÇÀÇ Çõ½Å°ú äÅÃÀ» ÃËÁøÇϰí ÀÖ½À´Ï´Ù.

À§Çù:

  • ¸ð¹ÙÀÏ ±â±â ¼ö¿ä µÐÈ­
  • ½º¸¶Æ®Æù, ÅÂºí¸´°ú °°Àº ¸ð¹ÙÀÏ ±â±â´Â ¸Þ¸ð¸®¿¡ Å©°Ô ÀÇÁ¸Çϰí ÀÖÀ¸¸ç, DRAM ¼ÒºñÀÇ ÁÖ¿ä ¿øµ¿·ÂÀÌ µÇ°í ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ ±â±â ¼ö¿ä °¨¼Ò´Â DRAM °ø±Þ°úÀ×À¸·Î À̾îÁ® °¡°Ý ¹× Á¦Á¶¾÷üÀÇ ¼öÀÍ¿¡ ¿µÇâÀ» ¹ÌÄ¥ ¼ö ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ À§ÇùÀ» ¿ÏÈ­Çϱâ À§Çؼ­´Â µ¥ÀÌÅͼ¾ÅÍ, Â÷·®¿ë ÀüÀÚ±â±â µî ´Ù¸¥ ºÐ¾ß·ÎÀÇ ´Ù°¢È­¿Í ´õ Å« ¿ë·®ÀÇ ¸Þ¸ð¸®¸¦ ÇÊ¿ä·Î ÇÏ´Â »õ·Î¿î ¿ëµµ¸¦ âÃâÇÏ´Â ±â¼ú Çõ½ÅÀÌ ¸ð¹ÙÀÏ ±â±âÀÇ º¯È­ÇÏ´Â Æ®·»µå ¼Ó¿¡¼­ DRAM ½ÃÀåÀÇ ¾ÈÁ¤°ú ¼ºÀåÀ» À¯ÁöÇÏ´Â µ¥ ÇʼöÀûÀÔ´Ï´Ù.

COVID-19ÀÇ ¿µÇâ::

  • Äڷγª19 »çÅ´ DRAM ½ÃÀå¿¡ Å« ¿µÇâÀ» ¹ÌÃÆ½À´Ï´Ù. °ø±Þ¸Á È¥¶õ, °øÀå Æó¼â, °³ÀÎ ¼Òºñ °¨¼Ò·Î ÀÎÇØ ¼ö¿ä¿Í °¡°ÝÀÌ º¯µ¿Çß½À´Ï´Ù. ¿ø°Ý ±Ù¹«¿Í ¿Â¶óÀΠȰµ¿Àº DRAMÀ» »ç¿ëÇÏ´Â ±â±â¿¡ ´ëÇÑ ¼ö¿ä¸¦ Áõ°¡½ÃÄ×Áö¸¸, °æÁ¦ÀÇ ºÒÈ®½Ç¼ºÀº ÅõÀÚ¿Í È®ÀåÀ» ÀúÇØÇß½À´Ï´Ù. ÆÒµ¥¹ÍÀÌ µðÁöÅÐ ÀüȯÀÇ Ãß¼¼¸¦ °¡¼ÓÈ­Çϸ鼭 ½ÃÀåÀº µµÀü°ú ±âȸ¸¦ µ¿½Ã¿¡ °æÇèÇß½À´Ï´Ù. °æÁ¦°¡ ȸº¹µÇ°í »ê¾÷ÀÌ ÀûÀÀÇÔ¿¡ µû¶ó ±â¼ú°ú µ¥ÀÌÅÍ ±â¹Ý ¿ëµµ¿¡ ´ëÇÑ ÀÇÁ¸µµ°¡ ³ô¾ÆÁü¿¡ µû¶ó DRAM ½ÃÀåÀº ¾ÈÁ¤À» µÇãÀ» °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
  • ¿¹Ãø ±â°£ µ¿¾È µ¿±â½Ä DRAM ºÎ¹®ÀÌ °¡Àå Å« ºñÁßÀ» Â÷ÁöÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
  • µ¿±â½Ä DRAM(Dynamic RAM)(SDRAM)Àº ½Ã½ºÅÛ Å¬·° ¼Óµµ¿¡ µ¿±âÈ­µÈ ÀÎÅÍÆäÀ̽º¸¦ °¡Áö°í ÀÖ¾î DRAM(Dynamic RAM)(DRAM) ½ÃÀå¿¡¼­ Å« Á¡À¯À²À» Â÷ÁöÇϰí ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ ¿¬µ¿Àº ±âÁ¸ DRAM¿¡ ºñÇØ µ¥ÀÌÅÍ Àü¼Û È¿À²À» ³ôÀÌ°í ´ë±â ½Ã°£À» ÁÙ¿©ÁÖ¸ç, SDRAMÀÇ Çâ»óµÈ ¼º´ÉÀ¸·Î ÀÎÇØ PC, ¼­¹ö, ³×Æ®¿öÅ© Àåºñ µî ´Ù¾çÇÑ ÄÄÇ»ÆÃ ¿ëµµ¿¡¼­ ¼±È£µÇ°í ÀÖ½À´Ï´Ù. °í¼Ó µ¥ÀÌÅÍ Ã³¸® ¿ä±¸»çÇ׿¡ ´ëÀÀÇÒ ¼ö ÀÖ´Â ´É·ÂÀº SDRAMÀÇ Ã¤ÅÃÀ» ÃËÁøÇÏ¿© ¸ÖƼŽºÅ·°ú Àüü ½Ã½ºÅÛ ÀÀ´ä¼ºÀ» Çâ»ó½ÃÄ×½À´Ï´Ù. ±â¼úÀÇ ¹ßÀü°ú ÇÔ²² SDRAMÀº DRAM ¼Ö·ç¼ÇÀÇ ÁøÈ­¿¡ Å« ±â¿©¸¦ Çϰí ÀÖ½À´Ï´Ù.
  • ¿¹Ãø ±â°£ µ¿¾È DDR4(Double Data Rate 4) ºÎ¹®ÀÌ °¡Àå ³ôÀº CAGRÀ» ±â·ÏÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
  • DRAM(Dynamic Random Access Memory)(DRAM) ½ÃÀå¿¡¼­ ´õºí µ¥ÀÌÅÍ ·¹ÀÌÆ®4(DDR4)´Â ¿¹Ãø ±â°£ µ¿¾È °¡Àå ³ôÀº CAGRÀ» º¸ÀÌ¸ç ±âÁ¸ DRAMº¸´Ù Å©°Ô ¹ßÀüÇϰí ÀÖ½À´Ï´Ù. DDR4´Â ´õ ºü¸¥ µ¥ÀÌÅÍ Àü¼Û ¼Óµµ, ´õ ³ÐÀº ´ë¿ªÆø, ´õ ³ôÀº ¿¡³ÊÁö È¿À²¼ºÀ¸·Î ÀÎÇØ °¡ÀüÁ¦Ç°ºÎÅÍ ¿£ÅÍÇÁ¶óÀÌÁî±Þ ¿ëµµ¿¡ À̸£±â±îÁö Çö´ë ÄÄÇ»ÆÃ ½Ã½ºÅÛÀÇ Ç¥ÁØ ¼±ÅÃÀÌ µÇ°í ÀÖ½À´Ï´Ù. Çâ»óµÈ ¼º´ÉÀº º¸´Ù ¿øÈ°ÇÑ ¸ÖƼŽºÅ·, ´õ ºü¸¥ ¿ëµµ ·Îµù, Àüü ½Ã½ºÅÛ ÀÀ´ä¼º Çâ»óÀ» °¡´ÉÇÏ°Ô ÇÕ´Ï´Ù. ±â¼úÀû ¿ä±¸°¡ ³ô¾ÆÁö´Â °¡¿îµ¥, DDR4ÀÇ ÃÖÀûÈ­µÈ ¼º´ÉÀº µ¥ÀÌÅÍ Áý¾àÀûÀÎ ÀÛ¾÷ÀÇ ¿ä±¸»çÇ×À» Áö¼ÓÀûÀ¸·Î ÃæÁ·½Ã۸ç DRAM ½ÃÀåÀÇ ÁøÈ­¸¦ Çü¼ºÇÏ´Â µ¥ ÀÖ¾î ÇÙ½ÉÀûÀÎ ¿ªÇÒÀ» È®°íÈ÷ Çϰí ÀÖ½À´Ï´Ù.

°¡Àå Å« Á¡À¯À²À» Â÷ÁöÇÏ´Â Áö¿ª

ºÏ¹Ì´Â ±â¼ú Çõ½Å°ú ¼ÒºñÀÇ Áß½ÉÁö·Î¼­ Áß¿äÇÑ À§Ä¡¸¦ Â÷ÁöÇϰí ÀÖÀ¸¸ç, ¿¹Ãø ±â°£ µ¿¾È °¡Àå Å« Á¡À¯À²À» Â÷ÁöÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ÀÌ Áö¿ª¿¡¼­´Â ¼ÒºñÀÚ ±â±â¿¡¼­ µ¥ÀÌÅͼ¾ÅÍ¿¡ À̸£±â±îÁö ÀüÀÚÁ¦Ç°¿¡ ´ëÇÑ ¼ö¿ä°¡ Ȱ¹ßÇØ DRAM ¼Òºñ¸¦ Å©°Ô °ßÀÎÇϰí ÀÖ½À´Ï´Ù. ºÏ¹ÌÀÇ ÁÖ¿ä ÇÏÀÌÅ×Å© ±â¾÷ ¹× ¿¬±¸±â°üÀº DRAMÀÇ ¹ßÀü°ú ÀÀ¿ë ºÐ¾ß Çü¼º¿¡ ÀÖ¾î ¸Å¿ì Áß¿äÇÑ ¿ªÇÒÀ» Çϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ, ÀÌ Áö¿ªÀÇ °æÁ¦Àû ¾ÈÁ¤¼º°ú ³ôÀº ½Å±â¼ú äÅ÷ü·Î ÀÎÇØ ¼¼°è DRAM ½ÃÀå¿¡¼­ ºÏ¹Ì´Â DRAM ½ÃÀå ¼ö¿ä âÃâ°ú ±â¼ú Çõ½Å¿¡ ÀÖ¾î Áß¿äÇÑ ¿ªÇÒÀ» Çϰí ÀÖ½À´Ï´Ù.

CAGRÀÌ °¡Àå ³ôÀº Áö¿ª :

¾ÆÅÂÁö¿ªÀº µ¿Àû ·£´ý ¾×¼¼½º ¸Þ¸ð¸®(DRAM) ½ÃÀå¿¡¼­ °¡Àå ³ôÀº ¿¬Æò±Õ ¼ºÀå·ü(CAGR)À» ±â·ÏÇßÀ¸¸ç, Á¦Á¶ ´É·Â, ±â¼ú ¹ßÀü, °­·ÂÇÑ ¼ö¿äÀÇ Á¶ÇÕÀ¸·Î ¼ºÀåÀ» ÁÖµµÇϰí ÀÖ½À´Ï´Ù. ÁÖ¿ä ¹ÝµµÃ¼ Á¦Á¶¾÷üÀÇ º»°ÅÁöÀÎ ¾ÆÅÂÁö¿ªÀº ¼÷·ÃµÈ ³ëµ¿·Â°ú ºñ¿ë È¿À²ÀûÀÎ »ý»ê ´É·ÂÀ» ¹ÙÅÁÀ¸·Î DRAM ºÎǰ »ý»ê ¹× °ø±Þ¿¡ ÀÖ¾î ¸Å¿ì Áß¿äÇÑ ¿ªÇÒÀ» ´ã´çÇϰí ÀÖ½À´Ï´Ù. ±Þ¼ÓÇÑ µµ½ÃÈ­¿Í °¢ ºÐ¾ßÀÇ µðÁöÅÐ ±â¼ú È®»êÀº °¡Àü, ÀÚµ¿Â÷, µ¥ÀÌÅͼ¾ÅÍ µîÀÇ ºÐ¾ß¿¡¼­ DRAM Á¦Ç°¿¡ ´ëÇÑ ¼ö¿ä¸¦ ÃËÁøÇϰí ÀÖ½À´Ï´Ù. ±× °á°ú, ÀÌ Áö¿ªÀÇ °æÁ¦ Ȱ·Â°ú ±â¼ú Çõ½ÅÀº ¼¼°è DRAM ½ÃÀåÀ» Áö¼ÓÀûÀ¸·Î Çü¼ºÇϰí ÀÖ½À´Ï´Ù.

¹«·á ¸ÂÃãÇü ¼­ºñ½º :

ÀÌ º¸°í¼­¸¦ ±¸µ¶ÇÏ´Â °í°´¿¡°Ô´Â ´ÙÀ½ Áß ÇϳªÀÇ ¹«·á ¸ÂÃãÈ­ ¿É¼ÇÀ» Á¦°øÇÕ´Ï´Ù.

  • ±â¾÷ ÇÁ·ÎÆÄÀÏ
    • Ãß°¡ ½ÃÀå ±â¾÷ÀÇ Á¾ÇÕÀûÀÎ ÇÁ·ÎÆÄÀϸµ(ÃÖ´ë 3°³»ç±îÁö)
    • ÁÖ¿ä ±â¾÷ÀÇ SWOT ºÐ¼®(3°³»ç±îÁö)
  • Áö¿ª ¼¼ºÐÈ­
    • °í°´ÀÇ °ü½É¿¡ µû¸¥ ÁÖ¿ä ±¹°¡º° ½ÃÀå ÃßÁ¤ ¹× ¿¹Ãø, CAGR(Âü°í: Ÿ´ç¼º È®Àο¡ µû¶ó ´Ù¸§)
  • °æÀï»ç º¥Ä¡¸¶Å·
    • Á¦Ç° Æ÷Æ®Æú¸®¿À, Áö¸®Àû ÀÔÁö, Àü·«Àû Á¦ÈÞ¸¦ ±â¹ÝÀ¸·Î ÇÑ ÁÖ¿ä ±â¾÷ º¥Ä¡¸¶Å·

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Á¦1Àå ÁÖ¿ä ¿ä¾à

Á¦2Àå ¼­¹®

  • °³¿ä
  • ÀÌÇØ°ü°èÀÚ
  • Á¶»ç ¹üÀ§
  • Á¶»ç ¹æ¹ý
    • µ¥ÀÌÅÍ ¸¶ÀÌ´×
    • µ¥ÀÌÅÍ ºÐ¼®
    • µ¥ÀÌÅÍ °ËÁõ
    • Á¶»ç Á¢±Ù
  • Á¶»ç ¼Ò½º
    • 1Â÷ Á¶»ç ¼Ò½º
    • 2Â÷ Á¶»ç ¼Ò½º
    • °¡Á¤

Á¦3Àå ½ÃÀå µ¿Ç⠺м®

  • ¼ºÀå ÃËÁø¿äÀÎ
  • ¼ºÀå ¾ïÁ¦¿äÀÎ
  • ±âȸ
  • À§Çù
  • ±â¼ú ºÐ¼®
  • ¿ëµµ ºÐ¼®
  • ½ÅÈï ½ÃÀå
  • ½ÅÇü Äڷγª¹ÙÀÌ·¯½º(COVID-19)ÀÇ ¿µÇâ

Á¦4Àå PorterÀÇ Five Forces ºÐ¼®

  • °ø±Þ ±â¾÷ÀÇ ±³¼··Â
  • ¹ÙÀ̾îÀÇ ±³¼··Â
  • ´ëüǰÀÇ À§Çù
  • ½Å±Ô ÁøÃâ¾÷üÀÇ À§Çù
  • °æÀï ±â¾÷°£ °æÀï °ü°è

Á¦5Àå ¼¼°èÀÇ DRAM(Dynamic RMA) ½ÃÀå : À¯Çüº°

  • Synchronous DRAM
  • Burst Extended Data
  • Output Extended Data
  • Output Asynchronous DRAM
  • Fast Page Mode

Á¦6Àå ¼¼°èÀÇ DRAM(Dynamic RMA) ½ÃÀå : ±â¼úº°

  • Double Data Rate 3 (DDR3)
  • Double Data Rate 4 (DDR4)
  • Double Data Rate 5 (DDR5)
  • Double Data Rate 2 (DDR2)
  • ±âŸ ±â¼ú

Á¦7Àå ¼¼°èÀÇ DRAM(Dynamic RMA) ½ÃÀå : ¿ëµµº°

  • ½º¸¶Æ®Æù/ÅÂºí¸´
  • PC/·¦Åé
  • µ¥ÀÌÅͼ¾ÅÍ
  • ±×·¡ÇÈ
  • ¼ÒºñÀÚ Á¦Ç°
  • ÀÚµ¿Â÷
  • ±âŸ ¿ëµµ

Á¦8Àå ¼¼°èÀÇ DRAM(Dynamic RMA) ½ÃÀå : Áö¿ªº°

  • ºÏ¹Ì
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    • ¸ß½ÃÄÚ
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    • »ç¿ìµð¾Æ¶óºñ¾Æ
    • ¾Æ¶ø¿¡¹Ì¸®Æ®(UAE)
    • īŸ¸£
    • ³²¾ÆÇÁ¸®Ä«°øÈ­±¹
    • ±âŸ Áßµ¿ ¹× ¾ÆÇÁ¸®Ä«

Á¦9Àå ÁÖ¿ä ¹ßÀü

  • °è¾à/ÆÄÆ®³Ê½Ê/Çù¾÷/ÇÕÀÛÅõÀÚ(JV)
  • Àμö¿Í ÇÕº´
  • ½ÅÁ¦Ç° ¹ß¸Å
  • »ç¾÷ È®´ë
  • ±âŸ ÁÖ¿ä Àü·«

Á¦10Àå ±â¾÷ °³¿ä

  • Winbond Electronics Corporation
  • Integrated Silicon Solution Inc
  • ATP Electronics Inc
  • Nanya Technology Corporation
  • Powerchip Technology Corporation
  • Etron Technology Inc
  • Transcend Information Inc
  • Kingston Technology Corporation
  • SK Hynix Inc
  • Micron Technology Inc
  • Samsung Electronics Co. Ltd
LSH 23.09.20

According to Stratistics MRC, the Global Dynamic Random Access Memory Market is accounted for $123.1 billion in 2023 and is expected to reach $337.6 billion by 2030 growing at a CAGR of 15.5% during the forecast period. Each bit of data is stored in a memory cell by a semiconductor memory called dynamic random access memory (DRAM). In capacitors located inside an integrated circuit, data is stored as a string of electrical charges. It is a typical kind of random access memory (RAM) that is used in workstations, servers, mobile devices, smartphones, and tablets. Memory can be refreshed and removed while a program is running thanks to DRAM's straightforward design, which only needs one transistor.

According to GSMA, 5G will become the leading network technology in the United States by 2025. 5G will enable the transmission of a vast amount of telecommunications data in a short time, which also means devices would need more storage.

Market Dynamics:

Driver:

  • Rising of interest towards the online gaming.
  • Online gaming's immersive experiences demand high memory capacities for seamless gameplay, efficient loading times, and advanced graphics. As the popularity of gaming continues to surge, the need for powerful gaming systems and devices equipped with ample DRAM becomes paramount. This trend spurs demand for higher-performance memory solutions, propelling innovation in DRAM technology to meet the escalating requirements of gamers, thereby fostering growth and opportunities within the DRAM market.

Restraint:

  • Higher power consumption.
  • As the demand for increased performance and memory capacity escalates, higher power usage becomes a concern due to its adverse impact on device heat generation, battery life, and overall energy efficiency. This challenge prompts the need for innovations in low-power DRAM technologies and architectures to address these issues. Mitigating power consumption while maintaining optimal performance is crucial to sustaining market growth, as it ensures compatibility with energy-efficient devices and aligns with the growing emphasis on environmentally conscious technology solutions.

Opportunity:

  • Growing prevalence of E-learning.
  • As education increasingly shifts towards digital platforms, the demand for devices capable of handling online courses, video lectures, and interactive content expands. DRAM's role in supporting seamless multitasking, quick content loading, and smooth user experiences is crucial in enhancing e-learning environments. The growing reliance on technology-driven education creates a favorable market landscape for higher memory capacities and faster data processing, driving innovation and adoption of advanced DRAM solutions tailored to meet the requirements of modern e-learning platforms.

Threat:

  • Slowdown in the mobile device demand.
  • Mobile devices, such as smartphones and tablets, are major drivers of DRAM consumption, relying heavily on memory for their functionality. A decline in demand for these devices could lead to an oversupply of DRAM, impacting prices and manufacturers' revenues. To mitigate this threat, diversification into other sectors like data centers and automotive electronics, coupled with innovation to create new applications requiring higher memory capacities, is essential for maintaining the DRAM market's stability and growth amidst fluctuations in mobile device trends.

COVID-19 Impact::

  • The COVID-19 pandemic significantly impacted the Dynamic Random Access Memory (DRAM) market. Supply chain disruptions, factory closures, and reduced consumer spending led to fluctuations in demand and pricing. While remote work and online activities boosted demand for devices using DRAM, economic uncertainties hampered investment and expansion. The market experienced both challenges and opportunities as the pandemic accelerated digital transformation trends. As economies recover and industries adapt, the DRAM market is expected to regain stability, driven by the growing reliance on technology and data-driven applications.
  • The synchronous DRAM segment is expected to be the largest during the forecast period
  • The synchronous dynamic random access memory (SDRAM) has a significant share in the Dynamic Random Access Memory (DRAM) market due to its synchronized interface with the system's clock speed. This coordination enhances data transfer efficiency and reduces latency compared to traditional DRAM. SDRAM's performance boost has made it a preferred choice for various computing applications, including PCs, servers, and networking equipment. Its ability to cater to fast-paced data processing requirements has driven its adoption, enabling improved multitasking and overall system responsiveness. As technology advances, SDRAM continues to contribute significantly to the evolving landscape of DRAM solutions.
  • The double data rate 4 (DDR4) segment is expected to have the highest CAGR during the forecast period
  • The double data rate 4 (DDR4) has the highest CAGR within the Dynamic Random Access Memory (DRAM) market over the forecast period, representing a significant advancement over its predecessors. Offering increased data transfer rates, higher bandwidth, and improved energy efficiency, DDR4 has become the standard choice for modern computing systems, from consumer electronics to enterprise-level applications. Its enhanced performance enables smoother multitasking, faster application loading, and better overall system responsiveness. As technology demands escalate, DDR4's optimized capabilities continue to meet the requirements of data-intensive tasks, solidifying its central role in shaping the evolution of the DRAM market.

Region with largest share:

North America holds a significant position as a hub of technological innovation and consumption and expected to hold a largest share over the forecast period. The region's robust demand for electronics, ranging from consumer devices to data centers, drives substantial DRAM consumption. Leading tech companies and research institutions within North America play a pivotal role in shaping DRAM advancements and applications. Moreover, the region's economic stability and high adoption rate of emerging technologies contribute to its influence in the global DRAM landscape, making North America a crucial player in both demand generation and innovation within the market.

Region with highest CAGR:

The Asia Pacific region witnessed highest CAGR in the Dynamic Random Access Memory (DRAM) market, driving its growth through a combination of manufacturing prowess, technological advancement, and robust demand. Home to major semiconductor manufacturers, Asia Pacific plays a pivotal role in the production and supply of DRAM components, capitalizing on its skilled workforce and cost-effective production capabilities. Rapid urbanization and the proliferation of digital technologies across sectors have fuelled substantial demand for DRAM products in consumer electronics, automotive, and data centres. As a result, the region's economic dynamism and innovation continue to shape the global DRAM market landscape.

Key players in the market:

Some of the key players in Dynamic Random Access Memorymarket include: Winbond Electronics Corporation, Integrated Silicon Solution Inc., ATP Electronics Inc., Nanya Technology Corporation, Powerchip Technology Corporation, Etron Technology Inc., Transcend Information Inc., Kingston Technology Corporation, SK Hynix Inc., Micron Technology Inc. and Samsung Electronics Co. Ltd.

Key Developments:

  • In September2022, SK Hynix announced that its latest "10anm" DRAM modules are nearly ready for inclusion in next-gen smartphones. It has the fastest transfer rate known to the LPDDR4 standard.
  • In October2022, Micron Technology developed 176-layer NAND memory, which it incorporates into products such as DRAM and PCIe 4.0 SSDs. It announced that it is also ready to ship new UFS 3.1 storage modules with this property.
  • In February 2022, Micron Technology announced the launch of uMCP5, the first universal flash storage (UFS) multichip package with low-power DDR5 (LPDDR5) DRAM. Micron's uMCP5 combines high-performance, high-density, and low-power memory and storage in one compact package, equipping smartphones to handle data-intensive 5G workloads with dramatically increased speed and power efficiency.

Types Covered:

  • Synchronous DRAM
  • Burst Extended Data
  • Output Extended Data
  • Output Asynchronous DRAM
  • Fast Page Mode

Technologies Covered:

  • Double Data Rate 3 (DDR3)
  • Double Data Rate 4 (DDR4)
  • Double Data Rate 5 (DDR5)
  • Double Data Rate 2 (DDR2)
  • Other Technologies

Applications Covered:

  • Smartphones/Tablets
  • PC/Laptop
  • Datacenter
  • Graphics
  • Consumer Products
  • Automotive
  • Other Applications

Regions Covered:

  • North America
    • US
    • Canada
    • Mexico
  • Europe
    • Germany
    • UK
    • Italy
    • France
    • Spain
    • Rest of Europe
  • Asia Pacific
    • Japan
    • China
    • India
    • Australia
    • New Zealand
    • South Korea
    • Rest of Asia Pacific
  • South America
    • Argentina
    • Brazil
    • Chile
    • Rest of South America
  • Middle East & Africa
    • Saudi Arabia
    • UAE
    • Qatar
    • South Africa
    • Rest of Middle East & Africa

What our report offers:

  • Market share assessments for the regional and country-level segments
  • Strategic recommendations for the new entrants
  • Covers Market data for the years 2021, 2022, 2023, 2026, and 2030
  • Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
  • Strategic recommendations in key business segments based on the market estimations
  • Competitive landscaping mapping the key common trends
  • Company profiling with detailed strategies, financials, and recent developments
  • Supply chain trends mapping the latest technological advancements

Free Customization Offerings:

All the customers of this report will be entitled to receive one of the following free customization options:

  • Company Profiling
    • Comprehensive profiling of additional market players (up to 3)
    • SWOT Analysis of key players (up to 3)
  • Regional Segmentation
    • Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
  • Competitive Benchmarking
    • Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

Table of Contents

1 Executive Summary

2 Preface

  • 2.1 Abstract
  • 2.2 Stake Holders
  • 2.3 Research Scope
  • 2.4 Research Methodology
    • 2.4.1 Data Mining
    • 2.4.2 Data Analysis
    • 2.4.3 Data Validation
    • 2.4.4 Research Approach
  • 2.5 Research Sources
    • 2.5.1 Primary Research Sources
    • 2.5.2 Secondary Research Sources
    • 2.5.3 Assumptions

3 Market Trend Analysis

  • 3.1 Introduction
  • 3.2 Drivers
  • 3.3 Restraints
  • 3.4 Opportunities
  • 3.5 Threats
  • 3.6 Technology Analysis
  • 3.7 Application Analysis
  • 3.8 Emerging Markets
  • 3.9 Impact of Covid-19

4 Porters Five Force Analysis

  • 4.1 Bargaining power of suppliers
  • 4.2 Bargaining power of buyers
  • 4.3 Threat of substitutes
  • 4.4 Threat of new entrants
  • 4.5 Competitive rivalry

5 Global Dynamic Random Access Memory Market, By Type

  • 5.1 Introduction
  • 5.2 Synchronous DRAM
  • 5.3 Burst Extended Data
  • 5.4 Output Extended Data
  • 5.5 Output Asynchronous DRAM
  • 5.6 Fast Page Mode

6 Global Dynamic Random Access Memory Market, By Technology

  • 6.1 Introduction
  • 6.2 Double Data Rate 3 (DDR3)
  • 6.3 Double Data Rate 4 (DDR4)
  • 6.4 Double Data Rate 5 (DDR5)
  • 6.5 Double Data Rate 2 (DDR2)
  • 6.6 Other Technologies

7 Global Dynamic Random Access Memory Market, By Application

  • 7.1 Introduction
  • 7.2 Smartphones/Tablets
  • 7.3 PC/Laptop
  • 7.4 Datacenter
  • 7.5 Graphics
  • 7.6 Consumer Products
  • 7.7 Automotive
  • 7.8 Other Applications

8 Global Dynamic Random Access Memory Market, By Geography

  • 8.1 Introduction
  • 8.2 North America
    • 8.2.1 US
    • 8.2.2 Canada
    • 8.2.3 Mexico
  • 8.3 Europe
    • 8.3.1 Germany
    • 8.3.2 UK
    • 8.3.3 Italy
    • 8.3.4 France
    • 8.3.5 Spain
    • 8.3.6 Rest of Europe
  • 8.4 Asia Pacific
    • 8.4.1 Japan
    • 8.4.2 China
    • 8.4.3 India
    • 8.4.4 Australia
    • 8.4.5 New Zealand
    • 8.4.6 South Korea
    • 8.4.7 Rest of Asia Pacific
  • 8.5 South America
    • 8.5.1 Argentina
    • 8.5.2 Brazil
    • 8.5.3 Chile
    • 8.5.4 Rest of South America
  • 8.6 Middle East & Africa
    • 8.6.1 Saudi Arabia
    • 8.6.2 UAE
    • 8.6.3 Qatar
    • 8.6.4 South Africa
    • 8.6.5 Rest of Middle East & Africa

9 Key Developments

  • 9.1 Agreements, Partnerships, Collaborations and Joint Ventures
  • 9.2 Acquisitions & Mergers
  • 9.3 New Product Launch
  • 9.4 Expansions
  • 9.5 Other Key Strategies

10 Company Profiling

  • 10.1 Winbond Electronics Corporation
  • 10.2 Integrated Silicon Solution Inc.
  • 10.3 ATP Electronics Inc.
  • 10.4 Nanya Technology Corporation
  • 10.5 Powerchip Technology Corporation
  • 10.6 Etron Technology Inc.
  • 10.7 Transcend Information Inc.
  • 10.8 Kingston Technology Corporation
  • 10.9 SK Hynix Inc.
  • 10.10 Micron Technology Inc.
  • 10.11 Samsung Electronics Co. Ltd
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