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¼¼°èÀÇ RF GaN ½ÃÀå : ºÎ¹®º° ¿¹Ãø(2025-2030³â)

RF GaN Market by Application (Aerospace & Defense, Consumer Electronics, Industrial), Frequency (C-Band, Ka-Band, Ku-Band), End User, Material Type, Component, Power Level - Global Forecast 2025-2030

¹ßÇàÀÏ: | ¸®¼­Ä¡»ç: 360iResearch | ÆäÀÌÁö Á¤º¸: ¿µ¹® 188 Pages | ¹è¼Û¾È³» : 1-2ÀÏ (¿µ¾÷ÀÏ ±âÁØ)

    
    
    




¡á º¸°í¼­¿¡ µû¶ó ÃֽŠÁ¤º¸·Î ¾÷µ¥ÀÌÆ®ÇÏ¿© º¸³»µå¸³´Ï´Ù. ¹è¼ÛÀÏÁ¤Àº ¹®ÀÇÇØ Áֽñ⠹ٶø´Ï´Ù.

RF GaN(ÁúÈ­ °¥·ý) ½ÃÀåÀº 2023³â¿¡ 14¾ï 7,000¸¸ ´Þ·¯·Î Æò°¡µÇ¾ú°í, 2024³â¿¡´Â 16¾ï 1,000¸¸ ´Þ·¯¿¡ µµ´ÞÇÒ °ÍÀ¸·Î ÃßÁ¤µÇ¸ç, CAGR 10.45%·Î ¼ºÀåÇÏ¿© 2030³â¿¡´Â 29¾ï 6,000¸¸ ´Þ·¯¿¡ À̸¨´Ï´Ù. ¿¹»óµË´Ï´Ù.

RF GaN(ÁúÈ­ °¥·ý) ½ÃÀåÀº ±âÁ¸ÀÇ ½Ç¸®ÄÜ ±â¹Ý ±â¼úº¸´Ù ¿ì¼öÇÑ ¼º´É Ư¼ºÀ» °®°í Àֱ⠶§¹®¿¡ ¹ÝµµÃ¼ ¾÷°è¿¡¼­ ±Þ¼ÓÈ÷ º¸±ÞµÇ°í ÀÖ½À´Ï´Ù. ÀÛµ¿ÇÏ´Â ´É·ÂÀ» °¡Áö±â À§ÇØ ÁÖ·Î ·¹ÀÌ´õ, À§¼º Åë½Å, 5G ÀÎÇÁ¶ó, ¹æÀ§ ½Ã½ºÅÛ µî ¿ëµµ·Î »ç¿ëµË´Ï´Ù. GaNÀÇ Çʿ伺Àº º¸´Ù ³ôÀº Àü·Â ¹Ðµµ, È¿À², ¿­Àüµµ¼º µî ÀåÁ¡¿¡ ÀÖ½À´Ï´Ù. GaN ±â¼úÀÇ Ã¤ÅÃÀÌ Áõ°¡Çϰí ÀÖ½À´Ï´Ù.

ÁÖ¿ä ½ÃÀå Åë°è
±âÁØ¿¬µµ(2023³â) 14¾ï 7,000¸¸ ´Þ·¯
ÃßÁ¤¿¬µµ(2024³â) 16¾ï 1,000¸¸ ´Þ·¯
¿¹Ãø¿¬µµ(2030³â) 29¾ï 6,000¸¸ ´Þ·¯
CAGR(%) 10.45%

½ÃÀå ¼ºÀåÀÇ ÁÖ¿ä ¿øµ¿·ÂÀº 5G ³×Æ®¿öÅ©ÀÇ º¸±Þ°ú ¹«¼± Åë½Å ±â¼ú Áøº¸ÀÔ´Ï´Ù. ÀüÀÚÀü°ú ÃֽŠ·¹ÀÌ´õ ±â¼úÀ» Áß½ÃÇÑ ¹æÀ§ ½Ã½ºÅÛ¿¡ ´ëÇÑ ÅõÀÚ°¡ RF GaN ¼ö¿ä¸¦ ´õ¿í ¹Ð¾î ¿Ã¸³´Ï´Ù. °Ô´Ù°¡ À§¼º ±â¹Ý Åë½Å°ú »ç¹°ÀÎÅͳÝ(IoT)ÀÇ ÃßÁøÀÌ ¼ºÀåÀÇ ±æÀ» ¿­¾ú½À´Ï´Ù. ÃֽŠºñÁî´Ï½º ±âȸ´Â ¼¼°è 5G ÀÎÇÁ¶óÀÇ ¹èÄ¡°¡ ÁøÇàµÊ¿¡ µû¶ó ¿¡³ÊÁö È¿À²ÀÌ ³ô°í ÄÄÆÑÆ®ÇÑ ¹ÝµµÃ¼ µð¹ÙÀ̽º¿¡ ´ëÇÑ ¿ä±¸°¡ ³ô¾ÆÁö°í Àֱ⠶§¹®ÀÔ´Ï´Ù. À̸¦ Ȱ¿ëÇϱâ À§ÇØ ±â¾÷Àº Àü·Â ¹Ðµµ¿Í È¿À²¼ºÀ» ³ôÀÌ´Â Àü·«Àû ÆÄÆ®³Ê½Ê°ú R&D ÅõÀÚ¿¡ ÁÖ·ÂÇØ¾ß ÇÕ´Ï´Ù.

±×·¯³ª ½ÃÀå ¼ºÀåÀ» ¹æÇØÇÏ´Â °ÍÀº GaN Àç·áÀÇ ¸·´ëÇÑ ºñ¿ë°ú Àç·á Á¦Á¶ÀÇ º¹À⼺°ú °°Àº ¿äÀÎÀ̸ç, À̵éÀº ºñ¿ë Àý°¨°ú ±¤¹üÀ§ÇÑ Ã¤Åÿ¡ À־ ½ÃÀå ±â¾÷ÀÇ °úÁ¦°¡ µÇ°í ÀÖ½À´Ï´Ù. ¶ÇÇÑ ´ëü ¹ÝµµÃ¼ ±â¼ú, ƯÈ÷ ½Ç¸®ÄÜ Ä«¹ÙÀ̵å(SiC)¿ÍÀÇ ±î´Ù·Î¿î °æÀïÀÌ ÀÖÀ¸¸ç RF GaN Á¦Á¶¾÷ü´Â Áö¼ÓÀûÀÎ ±â¼ú Çõ½ÅÀÌ ¿ä±¸µÇ°í ÀÖ½À´Ï´Ù.

±â¼ú Çõ½Å°ú ¿¬±¸ ±âȸ´Â dzºÎÇϸç, ƯÈ÷ ¿­ °ü¸® ¹× RF ÀåÄ¡¿¡ ´ëÇÑ ÅëÇÕÀ» °³¼±ÇÏ´Â GaN-on-Diamond ±â¼úÀÇ °³¹ßÀÌ Áß¿äÇÕ´Ï´Ù. °Ô´Ù°¡, ÀÚµ¿Â÷ žÀç ·¹ÀÌ´õ ½Ã½ºÅÛ¿¡ GaNÀÇ Àû¿ëÀ» ޱ¸ÇÏ´Â °ÍÀº À¯¸ÁÇÑ ÀáÀç·ÂÀ» º¸¿©ÁÝ´Ï´Ù. ½ÃÀå ¿ªÇÐÀº ¿ªµ¿ÀûÀÌ¸ç ±Þ¼ÓÇÑ ±â¼ú Áøº¸¸¦ Ư¡À¸·Î ÇϹǷΠ»õ·Î¿î µ¿Çâ¿¡ Ç×»ó ÁÖÀǸ¦ ±â¿ïÀÌ°í °æÀï ¿ìÀ§¸¦ À¯ÁöÇϱâ À§ÇØ Àû±ØÀûÀ¸·Î ÀûÀÀÇØ¾ß ÇÕ´Ï´Ù.

½ÃÀå ¿ªÇÐ : ºü¸£°Ô ÁøÈ­ÇÏ´Â RF GaN ½ÃÀåÀÇ ÁÖ¿ä ÀλçÀÌÆ® °ø°³

RF GaN ½ÃÀåÀº ¼ö¿ä ¹× °ø±ÞÀÇ ¿ªµ¿ÀûÀÎ »óÈ£ÀÛ¿ë¿¡ ÀÇÇØ º¯¸ðÇϰí ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ ½ÃÀå ¿ªÇÐÀÇ ÁøÈ­¸¦ ÀÌÇØÇÔÀ¸·Î½á ±â¾÷Àº ÃæºÐÇÑ Á¤º¸¸¦ ¹ÙÅÁÀ¸·Î ÅõÀÚ°áÁ¤, Àü·«Àû °áÁ¤ Á¤¹ÐÈ­, »õ·Î¿î ºñÁî´Ï½º ±âȸ ȹµæ¿¡ ´ëºñÇÒ ¼ö ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ µ¿ÇâÀ» Á¾ÇÕÀûÀ¸·Î ÆÄ¾ÇÇÔÀ¸·Î½á ±â¾÷Àº Á¤Ä¡Àû, Áö¸®Àû, ±â¼úÀû, »çȸÀû, °æÁ¦ÀûÀÎ ¿µ¿ª¿¡ °ÉÄ£ ´Ù¾çÇÑ ¸®½ºÅ©¸¦ °æ°¨ÇÒ ¼ö ÀÖÀ½°ú µ¿½Ã¿¡, ¼ÒºñÀÚ Çൿ°ú ±×°ÍÀÌ Á¦Á¶ ºñ¿ëÀ̳ª ±¸¸Å µ¿Çâ¿¡ ¹ÌÄ¡´Â ¿µÇâÀ» º¸´Ù ¸íÈ®ÇÏ°Ô ÀÌÇØÇÒ ¼ö ÀÖ½À´Ï´Ù.

  • ½ÃÀå ¼ºÀå ÃËÁø¿äÀÎ
    • ¹«¼± ÀÎÇÁ¶ó ¹× Åë½Å ½Ã½ºÅÛ¿¡¼­ RF GaN ±â¼ú ¼ö¿ä Áõ°¡
    • ÃֽŠ·¹ÀÌ´õ ¹× ÀüÀÚÀü ½Ã½ºÅÛ¿¡ À־ RF GaN µð¹ÙÀ̽ºÀÇ Ã¤Åà Ȯ´ë
    • RF GaN ¼Ö·ç¼ÇÀÇ Àü°³¸¦ ÃËÁøÇÏ´Â 5G ±â¼ú Áøº¸
    • À§¼º Åë½Å°ú ¿ìÁÖ Å½»ç¿¡¼­ RF GaN ±â¼úÀÇ ÀÀ¿ë È®´ë
  • ½ÃÀå ¼ºÀå ¾ïÁ¦¿äÀÎ
    • ±â¼úÀû °úÁ¦¿Í ½Å·Ú¼º¿¡ ´ëÇÑ ¿ì·Á°¡ º¸±ÞÀÇ À庮À¸·Î ÀÛ¿ë
    • GaN µð¹ÙÀ̽ºÀÇ Á¦Á¶¿¡ ¼ö¹ÝÇÏ´Â ¸·´ëÇÑ ºñ¿ë
  • ½ÃÀå ±âȸ
    • RF GaNÀ» ÀÌ¿ëÇÑ ¹æÀ§ ¹× ±º»ç ¿ëµµ¿¡ À־ °íµµ Åë½Å ½Ã½ºÅÛ¿¡ ´ëÇÑ ¿ä±¸ÀÇ °íÁ¶
    • Àü±âÀÚµ¿Â÷¿Í Ä¿³ØÆ¼µåÄ«¿¡¼­ RF GaN ±â¼ú¿¡ ´ëÇÑ ÀÚµ¿Â÷ ¾÷°è ¼ö¿ä Áõ°¡
    • RF GaN ¼Ö·ç¼ÇÀ» ÅëÇÕÇÑ ½º¸¶Æ® ÀÎÇÁ¶ó¿Í IoT ³×Æ®¿öÅ©ÀÇ µ¿Çâ Áõ°¡
  • ½ÃÀå °úÁ¦
    • RF GaN ½ÃÀå¿¡¼­ ±ÔÁ¦ Áؼö ¹®Á¦.
    • RF GaN ½ÃÀåÀÇ ¾ÈÁ¤¼º°ú »ý»ê È¿À²¿¡ ¿µÇâÀ» ÁÖ´Â °ø±Þ¸ÁÀÇ È¥¶õ

Porter's Five Forces : RF GaN ½ÃÀåÀ» Ž»öÇÏ´Â Àü·« µµ±¸

Porter's Five Forces ÇÁ·¹ÀÓ¿öÅ©´Â RF GaN ½ÃÀå °æÀï ±¸µµ¸¦ ÀÌÇØÇÏ´Â Áß¿äÇÑ µµ±¸ÀÔ´Ï´Ù. Porter's Five Forces ÇÁ·¹ÀÓ¿öÅ©´Â ±â¾÷ÀÇ °æÀï·ÂÀ» Æò°¡Çϰí Àü·«Àû ±âȸ¸¦ ޱ¸ÇÏ´Â ¸íÈ®ÇÑ ±â¼úÀ» Á¦°øÇÕ´Ï´Ù. ÀÌ ÇÁ·¹ÀÓ¿öÅ©´Â ±â¾÷ÀÌ ½ÃÀå ³» ¼¼·Âµµ¸¦ Æò°¡ÇÏ°í ½Å±Ô »ç¾÷ÀÇ ¼öÀͼºÀ» °áÁ¤ÇÏ´Â µ¥ µµ¿òÀÌ µË´Ï´Ù. ÀÌ·¯ÇÑ ÅëÂûÀ» ÅëÇØ ±â¾÷Àº ÀÚ»çÀÇ °­Á¡À» Ȱ¿ëÇϰí, ¾àÁ¡À» ÇØ°áÇϰí, ÀáÀçÀûÀÎ °úÁ¦¸¦ ÇÇÇÒ ¼ö ÀÖÀ¸¸ç, º¸´Ù °­ÀÎÇÑ ½ÃÀå Æ÷Áö¼Å´×À» º¸ÀåÇÒ ¼ö ÀÖ½À´Ï´Ù.

PESTLE ºÐ¼® : RF GaN ½ÃÀå¿¡¼­ ¿ÜºÎ ¿µÇâÀ» ÆÄ¾Ç

¿ÜºÎ °Å½Ã ȯ°æ ¿äÀÎÀº RF GaN ½ÃÀåÀÇ ¼º°ú ¿ªÇÐÀ» Çü¼ºÇϴµ¥ ¸Å¿ì Áß¿äÇÑ ¿ªÇÒÀ» ÇÕ´Ï´Ù. Á¤Ä¡Àû, °æÁ¦Àû, »çȸÀû, ±â¼úÀû, ¹ýÀû, ȯ°æÀû ¿äÀÎ ºÐ¼®Àº ÀÌ·¯ÇÑ ¿µÇâÀ» Ž»öÇÏ´Â µ¥ ÇÊ¿äÇÑ Á¤º¸¸¦ Á¦°øÇÕ´Ï´Ù. PESTLE ¿äÀÎÀ» Á¶»çÇÔÀ¸·Î½á ±â¾÷Àº ÀáÀçÀûÀÎ À§Çè°ú ±âȸ¸¦ ´õ Àß ÀÌÇØÇÒ ¼ö ÀÖ½À´Ï´Ù. ÀÌ ºÐ¼®À» ÅëÇØ ±â¾÷Àº ±ÔÁ¦, ¼ÒºñÀÚ ¼±È£, °æÁ¦ µ¿ÇâÀÇ º¯È­¸¦ ¿¹ÃøÇÏ°í ¾ÕÀ¸·Î ¿¹»óµÇ´Â Àû±ØÀûÀÎ ÀÇ»ç °áÁ¤À» ÇÒ Áغñ¸¦ ÇÒ ¼ö ÀÖ½À´Ï´Ù.

½ÃÀå Á¡À¯À² ºÐ¼® : RF GaN ½ÃÀå °æÀï ±¸µµ ÆÄ¾Ç

RF GaN ½ÃÀåÀÇ »ó¼¼ÇÑ ½ÃÀå Á¡À¯À² ºÐ¼®À» ÅëÇØ °ø±Þ¾÷üÀÇ ¼º°ú¸¦ Á¾ÇÕÀûÀ¸·Î Æò°¡ÇÒ ¼ö ÀÖ½À´Ï´Ù. ±â¾÷Àº ¼öÀÍ, °í°´ ±â¹Ý, ¼ºÀå·ü µî ÁÖ¿ä ÁöÇ¥¸¦ ºñ±³ÇÏ¿© °æÀï Æ÷Áö¼Å´×À» ¹àÈú ¼ö ÀÖ½À´Ï´Ù. ÀÌ ºÐ¼®À» ÅëÇØ ½ÃÀå ÁýÁß, ´ÜÆíÈ­, ÅëÇÕ µ¿ÇâÀ» ¹àÇô³»°í º¥´õµéÀº °æÀïÀÌ Ä¡¿­ÇØÁö´Â °¡¿îµ¥ ÀÚ»çÀÇ ÁöÀ§¸¦ ³ôÀÌ´Â Àü·«Àû ÀÇ»ç °áÁ¤À» ³»¸®´Â µ¥ ÇÊ¿äÇÑ Áö½ÄÀ» ¾òÀ» ¼ö ÀÖ½À´Ï´Ù.

FPNV Æ÷Áö¼Å´× ¸ÅÆ®¸¯½º : RF GaN ½ÃÀå¿¡¼­ °ø±Þ¾÷üÀÇ ¼º°ú Æò°¡

FPNV Æ÷Áö¼Å´× ¸ÅÆ®¸¯½º´Â RF GaN ½ÃÀå¿¡¼­ °ø±Þ¾÷ü¸¦ Æò°¡ÇÏ´Â Áß¿äÇÑ µµ±¸ÀÔ´Ï´Ù. ÀÌ ¸ÅÆ®¸¯½º¸¦ ÅëÇØ ºñÁî´Ï½º Á¶Á÷Àº °ø±Þ¾÷üÀÇ ºñÁî´Ï½º Àü·«°ú Á¦Ç° ¸¸Á·µµ¸¦ ±âÁØÀ¸·Î Æò°¡ÇÏ¿© ¸ñÇ¥¿¡ ¸Â´Â ÃæºÐÇÑ Á¤º¸¸¦ ¹ÙÅÁÀ¸·Î ÀÇ»ç °áÁ¤À» ³»¸± ¼ö ÀÖ½À´Ï´Ù. ³× °¡Áö »çºÐ¸éÀ» ÅëÇØ °ø±Þ¾÷ü¸¦ ¸íÈ®Çϰí Á¤È®ÇÏ°Ô ºÎ¹®È­Çϰí Àü·« ¸ñÇ¥¿¡ °¡Àå ÀûÇÕÇÑ ÆÄÆ®³Ê ¹× ¼Ö·ç¼ÇÀ» ÆÄ¾ÇÇÒ ¼ö ÀÖ½À´Ï´Ù.

Àü·« ºÐ¼® ¹× Ãßõ : RF GaN ½ÃÀå¿¡¼­ ¼º°øÀ» À§ÇÑ ±æÀ» ±×¸®±â

RF GaN ½ÃÀåÀÇ Àü·« ºÐ¼®Àº ½ÃÀå¿¡¼­ Á¸À縦 °­È­ÇÏ·Á´Â ±â¾÷¿¡°Ô ÇʼöÀûÀÔ´Ï´Ù. ÁÖ¿ä ÀÚ¿ø, ¿ª·® ¹× ¼º°ú ÁöÇ¥¸¦ °ËÅäÇÔÀ¸·Î½á ±â¾÷Àº ¼ºÀå ±âȸ¸¦ ÆÄ¾ÇÇÏ°í °³¼±À» À§ÇØ ³ë·ÂÇÒ ¼ö ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ Á¢±Ù ¹æ½ÄÀ» ÅëÇØ °æÀï ±¸µµ¿¡¼­ °úÁ¦¸¦ ±Øº¹ÇÏ°í »õ·Î¿î ºñÁî´Ï½º ±âȸ¸¦ Ȱ¿ëÇÏ¿© Àå±âÀûÀÎ ¼º°øÀ» °ÅµÑ ¼ö Àִ üÁ¦¸¦ ±¸ÃàÇÒ ¼ö ÀÖ½À´Ï´Ù.

ÀÌ º¸°í¼­´Â ÁÖ¿ä °ü½É ºÐ¾ß¸¦ Æ÷°ýÇÏ´Â ½ÃÀåÀÇ Á¾ÇÕÀûÀÎ ºÐ¼®À» Á¦°øÇÕ´Ï´Ù.

1. ½ÃÀå ħÅõ : ÇöÀç ½ÃÀå ȯ°æÀÇ »ó¼¼ÇÑ °ËÅä, ÁÖ¿ä ±â¾÷ÀÇ ±¤¹üÀ§ÇÑ µ¥ÀÌÅÍ, ½ÃÀå µµ´Þ¹üÀ§ ¹× Àü¹ÝÀûÀÎ ¿µÇâ·ÂÀ» Æò°¡ÇÕ´Ï´Ù.

2. ½ÃÀå °³Ã´µµ : ½ÅÈï ½ÃÀå ¼ºÀå ±âȸ¸¦ ÆÄ¾ÇÇÏ°í ±âÁ¸ ºÐ¾ßÀÇ È®Àå °¡´É¼ºÀ» Æò°¡ÇÏ¸ç ¹Ì·¡ ¼ºÀåÀ» À§ÇÑ Àü·«Àû ·Îµå¸ÊÀ» Á¦°øÇÕ´Ï´Ù.

3. ½ÃÀå ´Ù¾çÈ­ : ÃÖ±Ù Á¦Ç° Ãâ½Ã, ¹Ì°³Ã´ Áö¿ª, ¾÷°èÀÇ ÁÖ¿ä Áøº¸, ½ÃÀåÀ» Çü¼ºÇÏ´Â Àü·«Àû ÅõÀÚ¸¦ ºÐ¼®ÇÕ´Ï´Ù.

4. °æÀï Æò°¡ ¹× Á¤º¸ : °æÀï ±¸µµ¸¦ öÀúÈ÷ ºÐ¼®ÇÏ¿© ½ÃÀå Á¡À¯À², »ç¾÷ Àü·«, Á¦Ç° Æ÷Æ®Æú¸®¿À, ÀÎÁõ, ±ÔÁ¦ ´ç±¹ ½ÂÀÎ, ƯÇã µ¿Çâ, ÁÖ¿ä ±â¾÷ÀÇ ±â¼ú Áøº¸ µîÀ» °ËÁõÇÕ´Ï´Ù.

5. Á¦Ç° °³¹ß ¹× Çõ½Å : ¹Ì·¡ ½ÃÀå ¼ºÀåÀ» °¡¼ÓÇÒ °ÍÀ¸·Î ¿¹»óµÇ´Â ÃÖ÷´Ü ±â¼ú, R&D Ȱµ¿, Á¦Ç° Çõ½ÅÀ» °­Á¶ÇÕ´Ï´Ù.

¶ÇÇÑ ÀÌÇØ°ü°èÀÚ°¡ ÃæºÐÇÑ Á¤º¸¸¦ ¾ò°í ÀÇ»ç°áÁ¤À» ÇÒ ¼ö ÀÖµµ·Ï Áß¿äÇÑ Áú¹®¿¡ ´ë´äÇϰí ÀÖ½À´Ï´Ù.

1. ÇöÀç ½ÃÀå ±Ô¸ð¿Í ÇâÈÄ ¼ºÀå ¿¹ÃøÀº?

2. ÃÖ°íÀÇ ÅõÀÚ ±âȸ¸¦ Á¦°øÇÏ´Â Á¦Ç°, ºÎ¹® ¹× Áö¿ªÀº?

3. ½ÃÀåÀ» Çü¼ºÇÏ´Â ÁÖ¿ä ±â¼ú µ¿Çâ°ú ±ÔÁ¦ÀÇ ¿µÇâÀº?

4. ÁÖ¿ä º¥´õÀÇ ½ÃÀå Á¡À¯À²°ú °æÀï Æ÷Áö¼ÇÀº?

5. º¥´õ ½ÃÀå ÁøÀÔ¡¤Ã¶¼ö Àü·«ÀÇ ¿øµ¿·ÂÀÌ µÇ´Â ¼öÀÍ¿ø°ú Àü·«Àû ±âȸ´Â?

¸ñÂ÷

Á¦1Àå ¼­¹®

Á¦2Àå Á¶»ç ¹æ¹ý

Á¦3Àå ÁÖ¿ä ¿ä¾à

Á¦4Àå ½ÃÀå °³¿ä

Á¦5Àå ½ÃÀå ÀλçÀÌÆ®

  • ½ÃÀå ¿ªÇÐ
    • ¼ºÀå ÃËÁø¿äÀÎ
      • ¹«¼± ÀÎÇÁ¶ó ¹× Åë½Å ½Ã½ºÅÛ¿¡¼­ RF GaN ±â¼ú ¼ö¿ä Áõ°¡
      • Çö´ë ·¹ÀÌ´õ ¹× ÀüÀÚÀü ½Ã½ºÅÛ¿¡¼­ RF GaN µð¹ÙÀ̽º äÅà Áõ°¡
      • 5G ±â¼ú Áøº¸°¡ RF GaN ¼Ö·ç¼ÇÀÇ µµÀÔÀ» ÃËÁø
      • À§¼º Åë½Å°ú ¿ìÁÖ Å½»ç¿¡¼­ RF GaN ±â¼úÀÇ ÀÀ¿ë È®´ë
    • ¾ïÁ¦¿äÀÎ
      • ±â¼úÀû °úÁ¦¿Í ½Å·Ú¼º¿¡ ´ëÇÑ ¿ì·Á°¡ º¸´Ù ±¤¹üÀ§ÇÑ µµÀÔ À庮À¸·Î ÀÛ¿ë
      • GaN µð¹ÙÀ̽ºÀÇ Á¦Á¶¿¡ ¼ö¹ÝÇÏ´Â ¸·´ëÇÑ ºñ¿ë
    • ±âȸ
      • RF GaNÀ» Ȱ¿ëÇÑ ¹æÀ§ ¹× ±º»ç ¿ëµµ¿¡ À־ °íµµÀÇ Åë½Å ½Ã½ºÅÛ¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡
      • ÀÚµ¿Â÷ ¾÷°è¿¡¼­´Â Àü±âÀÚµ¿Â÷¿Í Ä¿³ØÆ¼µåÄ«ÀÇ RF GaN ±â¼ú¿¡ ´ëÇÑ ¼ö¿ä°¡ È®´ë
      • RF GaN ¼Ö·ç¼ÇÀ» ÅëÇÕÇÑ ½º¸¶Æ® ÀÎÇÁ¶ó¿Í IoT ³×Æ®¿öÅ©ÀÇ Æ®·»µå È®´ë
    • °úÁ¦
      • RF GaN ½ÃÀå¿¡¼­ ±ÔÁ¦ ÁؼöÀÇ °úÁ¦°¡ Á¦Ç°ÀÇ Àü°³¿Í Çõ½Å¿¡ ¿µÇâ
      • °ø±Þ¸ÁÀÇ È¥¶õÀÌ RF GaN ½ÃÀåÀÇ ¾ÈÁ¤¼º°ú »ý»ê È¿À²¿¡ ¿µÇâ
  • ½ÃÀå ¼¼ºÐÈ­ ºÐ¼®
  • Porter's Five Forces ºÐ¼®
  • PESTEL ºÐ¼®
    • Á¤Ä¡Àû
    • °æÁ¦Àû
    • »çȸÀû
    • ±â¼úÀû
    • ¹ýÀû
    • ȯ°æÀû

Á¦6Àå RF GaN ½ÃÀå : ¿ëµµº°

  • Ç×°ø¿ìÁÖ ¹× ¹æÀ§
    • Ç×°øÀüÀÚ±â±â
    • ÀüÀÚÀü
    • ·¹ÀÌ´õ
  • °¡Àü
    • ½º¸¶Æ®Æù
    • ÅÂºí¸´
    • ¿þ¾î·¯ºí
  • »ê¾÷
    • ÀÚµ¿È­
    • ¿¡³ÊÁö
    • ÀÇÇÐ
  • Åë½Å
    • ±âÁö±¹
    • Point-To-Point ¸¶ÀÌÅ©·ÎÆÄ
    • À§¼ºÅë½Å

Á¦7Àå RF GaN ½ÃÀå : Á֯ļöº°

  • C ¹êµå
    • 4-8GHz
  • Ka ¹êµå
    • 26.5-40GHz
  • Ku ¹êµå
    • 12-18GHz
  • L ¹êµå
    • 1-2GHz
  • S ¹êµå
    • 2-4GHz
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  • Ampleon
  • Analog Devices
  • Broadcom
  • Cree Inc.
  • Infineon Technologies
  • MACOM
  • Mitsubishi Electric
  • Murata Manufacturing
  • Northrop Grumman
  • NXP Semiconductors
  • ON Semiconductor
  • Qorvo
  • RFHIC Corporation
  • Skyworks Solutions
  • STMicroelectronics
  • Sumitomo Electric Device Innovations
  • Texas Instruments
  • Toshiba Electronic Devices&Storage
  • WIN Semiconductors
  • Wolfspeed
LYJ

The RF GaN Market was valued at USD 1.47 billion in 2023, expected to reach USD 1.61 billion in 2024, and is projected to grow at a CAGR of 10.45%, to USD 2.96 billion by 2030.

The RF GaN (Gallium Nitride) market is rapidly gaining traction in the semiconductor industry due to its superior performance characteristics over traditional silicon-based technologies. RF GaN is primarily used in applications such as radar, satellite communications, 5G infrastructures, and defense systems due to its ability to operate efficiently at high frequencies and power levels. The necessity of RF GaN lies in its benefits such as higher power density, efficiency, and thermal conductivity. End-use industries, including telecommunications, military & defense, aerospace, and consumer electronics, increasingly adopt RF GaN technology to meet demands for high-speed, high-frequency applications.

KEY MARKET STATISTICS
Base Year [2023] USD 1.47 billion
Estimated Year [2024] USD 1.61 billion
Forecast Year [2030] USD 2.96 billion
CAGR (%) 10.45%

Market growth is predominantly driven by the proliferation of 5G networks and advancements in wireless communication technologies. Investments in defense systems, emphasizing electronic warfare and modern radar technologies, further boost RF GaN demand. Moreover, the push for satellite-based communications and the Internet of Things (IoT) create growth avenues. Latest opportunities stem from the rising deployment of 5G infrastructure worldwide and the increasing requirement for energy-efficient and compact semiconductor devices. To capitalize on these, companies should focus on strategic partnerships and R&D investments that enhance power density and efficiency.

However, market growth is hindered by factors such as the high cost of GaN materials and complexities in material fabrication, which challenge market players in cost reduction and wide-scale adoption. There is also stiff competition from alternative semiconductor technologies, particularly silicon carbide (SiC), which demands that RF GaN manufacturers innovate continuously.

Opportunities for innovation and research are abundant, particularly in developing GaN-on-diamond technologies to improve thermal management and integration in RF devices. Additionally, exploring GaN's application in automotive radar systems presents promising potential. The RF GaN market is dynamic and characterized by rapid technological advancements, requiring constant vigilance for emerging trends and active adaptation to maintain competitive advantage.

Market Dynamics: Unveiling Key Market Insights in the Rapidly Evolving RF GaN Market

The RF GaN Market is undergoing transformative changes driven by a dynamic interplay of supply and demand factors. Understanding these evolving market dynamics prepares business organizations to make informed investment decisions, refine strategic decisions, and seize new opportunities. By gaining a comprehensive view of these trends, business organizations can mitigate various risks across political, geographic, technical, social, and economic domains while also gaining a clearer understanding of consumer behavior and its impact on manufacturing costs and purchasing trends.

  • Market Drivers
    • Increasing demand for RF GaN technology in wireless infrastructure and communication systems
    • Growing adoption of RF GaN devices in modern radar and electronic warfare systems
    • Advancements in 5G technology fueling the deployment of RF GaN solutions
    • Expanding application of RF GaN technology in satellite communication and space exploration
  • Market Restraints
    • Technical challenges and reliability concerns act as barriers to wider adoption
    • High cost associated with the production of GaN devices
  • Market Opportunities
    • Growing requirement for advanced communication systems in defense and military applications utilizing RF GaN
    • Expanding automotive industry demand for RF GaN technologies in electric and connected vehicles
    • Rising trend in smart infrastructure and IoT networks incorporating RF GaN solutions
  • Market Challenges
    • Regulatory compliance challenges in the RF GaN market affecting product deployment and innovation
    • Supply chain disruptions impacting RF GaN market stability and production efficiency

Porter's Five Forces: A Strategic Tool for Navigating the RF GaN Market

Porter's five forces framework is a critical tool for understanding the competitive landscape of the RF GaN Market. It offers business organizations with a clear methodology for evaluating their competitive positioning and exploring strategic opportunities. This framework helps businesses assess the power dynamics within the market and determine the profitability of new ventures. With these insights, business organizations can leverage their strengths, address weaknesses, and avoid potential challenges, ensuring a more resilient market positioning.

PESTLE Analysis: Navigating External Influences in the RF GaN Market

External macro-environmental factors play a pivotal role in shaping the performance dynamics of the RF GaN Market. Political, Economic, Social, Technological, Legal, and Environmental factors analysis provides the necessary information to navigate these influences. By examining PESTLE factors, businesses can better understand potential risks and opportunities. This analysis enables business organizations to anticipate changes in regulations, consumer preferences, and economic trends, ensuring they are prepared to make proactive, forward-thinking decisions.

Market Share Analysis: Understanding the Competitive Landscape in the RF GaN Market

A detailed market share analysis in the RF GaN Market provides a comprehensive assessment of vendors' performance. Companies can identify their competitive positioning by comparing key metrics, including revenue, customer base, and growth rates. This analysis highlights market concentration, fragmentation, and trends in consolidation, offering vendors the insights required to make strategic decisions that enhance their position in an increasingly competitive landscape.

FPNV Positioning Matrix: Evaluating Vendors' Performance in the RF GaN Market

The Forefront, Pathfinder, Niche, Vital (FPNV) Positioning Matrix is a critical tool for evaluating vendors within the RF GaN Market. This matrix enables business organizations to make well-informed decisions that align with their goals by assessing vendors based on their business strategy and product satisfaction. The four quadrants provide a clear and precise segmentation of vendors, helping users identify the right partners and solutions that best fit their strategic objectives.

Strategy Analysis & Recommendation: Charting a Path to Success in the RF GaN Market

A strategic analysis of the RF GaN Market is essential for businesses looking to strengthen their global market presence. By reviewing key resources, capabilities, and performance indicators, business organizations can identify growth opportunities and work toward improvement. This approach helps businesses navigate challenges in the competitive landscape and ensures they are well-positioned to capitalize on newer opportunities and drive long-term success.

Key Company Profiles

The report delves into recent significant developments in the RF GaN Market, highlighting leading vendors and their innovative profiles. These include Ampleon, Analog Devices, Broadcom, Cree Inc., Infineon Technologies, MACOM, Mitsubishi Electric, Murata Manufacturing, Northrop Grumman, NXP Semiconductors, ON Semiconductor, Qorvo, RFHIC Corporation, Skyworks Solutions, STMicroelectronics, Sumitomo Electric Device Innovations, Texas Instruments, Toshiba Electronic Devices & Storage, WIN Semiconductors, and Wolfspeed.

Market Segmentation & Coverage

This research report categorizes the RF GaN Market to forecast the revenues and analyze trends in each of the following sub-markets:

  • Based on Application, market is studied across Aerospace & Defense, Consumer Electronics, Industrial, and Telecommunications. The Aerospace & Defense is further studied across Avionics, Electronic Warfare, and Radar. The Consumer Electronics is further studied across Smartphones, Tablets, and Wearables. The Industrial is further studied across Automation, Energy, and Medical. The Telecommunications is further studied across Base Stations, Point-To-Point Microwave, and Satcom.
  • Based on Frequency, market is studied across C-Band, Ka-Band, Ku-Band, L-Band, S-Band, and X-Band. The C-Band is further studied across 4-8 GHz. The Ka-Band is further studied across 26.5-40 GHz. The Ku-Band is further studied across 12-18 GHz. The L-Band is further studied across 1-2 GHz. The S-Band is further studied across 2-4 GHz. The X-Band is further studied across 8-12 GHz.
  • Based on End User, market is studied across Commercial, Military, and Space.
  • Based on Material Type, market is studied across GaN On Diamond, GaN On Si, and GaN On SiC.
  • Based on Component, market is studied across Amplifiers, Diodes, and Transistors. The Amplifiers is further studied across Driver Amplifiers, Low Noise Amplifiers, and Power Amplifiers. The Diodes is further studied across PIN Diodes and Schottky Diodes. The Transistors is further studied across Low Noise Transistors, Power Transistors, and Switching Transistors.
  • Based on Power Level, market is studied across 10W, 20W, 50W, and 5W.
  • Based on Region, market is studied across Americas, Asia-Pacific, and Europe, Middle East & Africa. The Americas is further studied across Argentina, Brazil, Canada, Mexico, and United States. The United States is further studied across California, Florida, Illinois, New York, Ohio, Pennsylvania, and Texas. The Asia-Pacific is further studied across Australia, China, India, Indonesia, Japan, Malaysia, Philippines, Singapore, South Korea, Taiwan, Thailand, and Vietnam. The Europe, Middle East & Africa is further studied across Denmark, Egypt, Finland, France, Germany, Israel, Italy, Netherlands, Nigeria, Norway, Poland, Qatar, Russia, Saudi Arabia, South Africa, Spain, Sweden, Switzerland, Turkey, United Arab Emirates, and United Kingdom.

The report offers a comprehensive analysis of the market, covering key focus areas:

1. Market Penetration: A detailed review of the current market environment, including extensive data from top industry players, evaluating their market reach and overall influence.

2. Market Development: Identifies growth opportunities in emerging markets and assesses expansion potential in established sectors, providing a strategic roadmap for future growth.

3. Market Diversification: Analyzes recent product launches, untapped geographic regions, major industry advancements, and strategic investments reshaping the market.

4. Competitive Assessment & Intelligence: Provides a thorough analysis of the competitive landscape, examining market share, business strategies, product portfolios, certifications, regulatory approvals, patent trends, and technological advancements of key players.

5. Product Development & Innovation: Highlights cutting-edge technologies, R&D activities, and product innovations expected to drive future market growth.

The report also answers critical questions to aid stakeholders in making informed decisions:

1. What is the current market size, and what is the forecasted growth?

2. Which products, segments, and regions offer the best investment opportunities?

3. What are the key technology trends and regulatory influences shaping the market?

4. How do leading vendors rank in terms of market share and competitive positioning?

5. What revenue sources and strategic opportunities drive vendors' market entry or exit strategies?

Table of Contents

1. Preface

  • 1.1. Objectives of the Study
  • 1.2. Market Segmentation & Coverage
  • 1.3. Years Considered for the Study
  • 1.4. Currency & Pricing
  • 1.5. Language
  • 1.6. Stakeholders

2. Research Methodology

  • 2.1. Define: Research Objective
  • 2.2. Determine: Research Design
  • 2.3. Prepare: Research Instrument
  • 2.4. Collect: Data Source
  • 2.5. Analyze: Data Interpretation
  • 2.6. Formulate: Data Verification
  • 2.7. Publish: Research Report
  • 2.8. Repeat: Report Update

3. Executive Summary

4. Market Overview

5. Market Insights

  • 5.1. Market Dynamics
    • 5.1.1. Drivers
      • 5.1.1.1. Increasing demand for RF GaN technology in wireless infrastructure and communication systems
      • 5.1.1.2. Growing adoption of RF GaN devices in modern radar and electronic warfare systems
      • 5.1.1.3. Advancements in 5G technology fueling the deployment of RF GaN solutions
      • 5.1.1.4. Expanding application of RF GaN technology in satellite communication and space exploration
    • 5.1.2. Restraints
      • 5.1.2.1. Technical challenges and reliability concerns act as barriers to wider adoption
      • 5.1.2.2. High cost associated with the production of GaN devices
    • 5.1.3. Opportunities
      • 5.1.3.1. Growing requirement for advanced communication systems in defense and military applications utilizing RF GaN
      • 5.1.3.2. Expanding automotive industry demand for RF GaN technologies in electric and connected vehicles
      • 5.1.3.3. Rising trend in smart infrastructure and IoT networks incorporating RF GaN solutions
    • 5.1.4. Challenges
      • 5.1.4.1. Regulatory compliance challenges in the RF GaN market affecting product deployment and innovation
      • 5.1.4.2. Supply chain disruptions impacting RF GaN market stability and production efficiency
  • 5.2. Market Segmentation Analysis
  • 5.3. Porter's Five Forces Analysis
    • 5.3.1. Threat of New Entrants
    • 5.3.2. Threat of Substitutes
    • 5.3.3. Bargaining Power of Customers
    • 5.3.4. Bargaining Power of Suppliers
    • 5.3.5. Industry Rivalry
  • 5.4. PESTLE Analysis
    • 5.4.1. Political
    • 5.4.2. Economic
    • 5.4.3. Social
    • 5.4.4. Technological
    • 5.4.5. Legal
    • 5.4.6. Environmental

6. RF GaN Market, by Application

  • 6.1. Introduction
  • 6.2. Aerospace & Defense
    • 6.2.1. Avionics
    • 6.2.2. Electronic Warfare
    • 6.2.3. Radar
  • 6.3. Consumer Electronics
    • 6.3.1. Smartphones
    • 6.3.2. Tablets
    • 6.3.3. Wearables
  • 6.4. Industrial
    • 6.4.1. Automation
    • 6.4.2. Energy
    • 6.4.3. Medical
  • 6.5. Telecommunications
    • 6.5.1. Base Stations
    • 6.5.2. Point-To-Point Microwave
    • 6.5.3. Satcom

7. RF GaN Market, by Frequency

  • 7.1. Introduction
  • 7.2. C-Band
    • 7.2.1. 4-8 GHz
  • 7.3. Ka-Band
    • 7.3.1. 26.5-40 GHz
  • 7.4. Ku-Band
    • 7.4.1. 12-18 GHz
  • 7.5. L-Band
    • 7.5.1. 1-2 GHz
  • 7.6. S-Band
    • 7.6.1. 2-4 GHz
  • 7.7. X-Band
    • 7.7.1. 8-12 GHz

8. RF GaN Market, by End User

  • 8.1. Introduction
  • 8.2. Commercial
  • 8.3. Military
  • 8.4. Space

9. RF GaN Market, by Material Type

  • 9.1. Introduction
  • 9.2. GaN On Diamond
  • 9.3. GaN On Si
  • 9.4. GaN On SiC

10. RF GaN Market, by Component

  • 10.1. Introduction
  • 10.2. Amplifiers
    • 10.2.1. Driver Amplifiers
    • 10.2.2. Low Noise Amplifiers
    • 10.2.3. Power Amplifiers
  • 10.3. Diodes
    • 10.3.1. PIN Diodes
    • 10.3.2. Schottky Diodes
  • 10.4. Transistors
    • 10.4.1. Low Noise Transistors
    • 10.4.2. Power Transistors
    • 10.4.3. Switching Transistors

11. RF GaN Market, by Power Level

  • 11.1. Introduction
  • 11.2. 10W
  • 11.3. 20W
  • 11.4. 50W
  • 11.5. 5W

12. Americas RF GaN Market

  • 12.1. Introduction
  • 12.2. Argentina
  • 12.3. Brazil
  • 12.4. Canada
  • 12.5. Mexico
  • 12.6. United States

13. Asia-Pacific RF GaN Market

  • 13.1. Introduction
  • 13.2. Australia
  • 13.3. China
  • 13.4. India
  • 13.5. Indonesia
  • 13.6. Japan
  • 13.7. Malaysia
  • 13.8. Philippines
  • 13.9. Singapore
  • 13.10. South Korea
  • 13.11. Taiwan
  • 13.12. Thailand
  • 13.13. Vietnam

14. Europe, Middle East & Africa RF GaN Market

  • 14.1. Introduction
  • 14.2. Denmark
  • 14.3. Egypt
  • 14.4. Finland
  • 14.5. France
  • 14.6. Germany
  • 14.7. Israel
  • 14.8. Italy
  • 14.9. Netherlands
  • 14.10. Nigeria
  • 14.11. Norway
  • 14.12. Poland
  • 14.13. Qatar
  • 14.14. Russia
  • 14.15. Saudi Arabia
  • 14.16. South Africa
  • 14.17. Spain
  • 14.18. Sweden
  • 14.19. Switzerland
  • 14.20. Turkey
  • 14.21. United Arab Emirates
  • 14.22. United Kingdom

15. Competitive Landscape

  • 15.1. Market Share Analysis, 2023
  • 15.2. FPNV Positioning Matrix, 2023
  • 15.3. Competitive Scenario Analysis
  • 15.4. Strategy Analysis & Recommendation

Companies Mentioned

  • 1. Ampleon
  • 2. Analog Devices
  • 3. Broadcom
  • 4. Cree Inc.
  • 5. Infineon Technologies
  • 6. MACOM
  • 7. Mitsubishi Electric
  • 8. Murata Manufacturing
  • 9. Northrop Grumman
  • 10. NXP Semiconductors
  • 11. ON Semiconductor
  • 12. Qorvo
  • 13. RFHIC Corporation
  • 14. Skyworks Solutions
  • 15. STMicroelectronics
  • 16. Sumitomo Electric Device Innovations
  • 17. Texas Instruments
  • 18. Toshiba Electronic Devices & Storage
  • 19. WIN Semiconductors
  • 20. Wolfspeed
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