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SOI(Silicon-on-Insulator) ½ÃÀå - ¿¹Ãø(2024-2029³â)Silicon-on-Insulator (SOI) Market - Forecasts from 2024 to 2029 |
SOI(Silicon-on-Insulator) ½ÃÀåÀº 2022³â 13¾ï 5,344¸¸ 2,000´Þ·¯·Î Æò°¡µÇ¸ç, ¿¬Æò±Õ 19.80% ¼ºÀåÇÏ¿© 2029³â¿¡´Â 45¾ï 9,590¸¸ 2,000´Þ·¯ÀÇ ½ÃÀå ±Ô¸ð¿¡ µµ´ÞÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
ÁýÀû ȸ·Î(IC)ÀÇ ¼º´É°ú È¿À²¼ºÀº SOI(Silicon-on-Insulator) ±â¼ú·Î ¾Ë·ÁÁø »õ·Î¿î ¹ÝµµÃ¼ Á¦Á¶ °øÁ¤À» ÅëÇØ °³¼±µÇ°í ÀÖ½À´Ï´Ù. »êȱԼÒ(SiO2) ¶Ç´Â »çÆÄÀÌ¾î ±â¼ú¿¡¼´Â Àý¿¬ ±âÆÇ À§¿¡ Ȱ¼ºÃþÀ¸·Î ¾Ë·ÁÁø ¾ãÀº ½Ç¸®ÄÜ ÃþÀÌ Çü¼ºµË´Ï´Ù. ÀÌ "»÷µåÀ§Ä¡" ±¸Á¶¿¡¼ Àý¿¬ÃþÀº Ȱ¼º ½Ç¸®ÄÜ ÃþÀ» ±âÆÇÀ¸·ÎºÎÅÍ Àü±âÀûÀ¸·Î ºÐ¸®ÇÕ´Ï´Ù. ÀÌ·¯ÇÑ ºÐ¸®´Â ±âÁ¸ÀÇ ¹úÅ© ½Ç¸®ÄÜ ±âÆÇ°ú ºñ±³ÇÏ¿© ±â»ý Ä¿ÆÐ½ÃÅϽº¸¦ °¨¼Ò½ÃÄÑ ICÀÇ ¼Óµµ, Àü·Â È¿À² ¹× ³ëÀÌÁî ³»¼ºÀ» Çâ»ó½Ãŵ´Ï´Ù.
¶ÇÇÑ, SOI ±â¹Ý ICÀÇ ¹æ»ç¼± °æµµ¿Í ³ëÀÌÁî ³»¼ºÀº Àý¿¬ ±âÆÇÀÌ Á¦°øÇÏ´Â Àý¿¬À» ÅëÇØ °³¼±µÇ¾î ÀÚµ¿Â÷ ¹× Ç×°ø±â¿Í °°Àº ¿¾ÇÇÑ È¯°æ¿¡¼ »ç¿ëÇϱ⿡ ÀûÇÕÇÕ´Ï´Ù.
SOI(Silicon-on-Insulator) ½ÃÀåÀÇ ¼ºÀåÀ» ÃËÁøÇÏ´Â ÁÖ¿ä ¿äÀÎÀ¸·Î´Â ½ÅÈï °æÁ¦±¹À» Áß½ÉÀ¸·Î 5G ±â¼ú µµÀÔÀÌ Áõ°¡Çϰí ÀÖ´Â °ÍÀ» µé ¼ö ÀÖ½À´Ï´Ù. ÀÎÅÍ³Ý º¸±Þ È®´ë´Â 5G ±â¼ú¿¡ ´ëÇÑ ÅõÀÚ¸¦ ÃËÁøÇÏ´Â ÁÖ¿ä ¿äÀÎÀ̸ç, ÀÌ´Â »õ·Î¿î ÀÎÅÍÆäÀ̽º ¹× ºÎǰ ±â¼ú¿¡ ´ëÇÑ ¼ö¿ä¸¦ ´õ¿í Áõ°¡½ÃÄÑ SOI(Silicon-on-Insulator) ¼ö¿ä¿¡ ±àÁ¤ÀûÀÎ ¿µÇâÀ» ¹ÌÄ¥ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
ƯÈ÷ ½ÅÈï±¹¿¡¼´Â Ȩ ¿ÀÅä¸ÞÀ̼ǿ¡ ´ëÇÑ ÅõÀÚ¿Í ÇÔ²² ½º¸¶Æ® °¡Àü ¹× Ä¿³ØÆ¼µå °¡ÀüÁ¦Ç°ÀÇ Ã¤ÅÃÀÌ Áõ°¡Çϰí ÀÖ¾î ½ÃÀå ¼ºÀåÀÇ ±âȸ°¡ ´õ¿í È®´ëµÇ°í ÀÖ½À´Ï´Ù. ±×·¯³ª ´ëü ±â¼úÀÇ °¡¿ë¼ºÀÌ ÇâÈÄ ¸î ³â µ¿¾È ½ÃÀå ¼ºÀå¿¡ °É¸²µ¹ÀÌ µÉ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
¹«¼± ±â¼úÀÇ ±Þ¼ÓÇÑ ¹ßÀü°ú ÇÔ²² ÀÎÅÍ³Ý º¸±Þ·üÀÇ Áõ°¡´Â ¿¹Ãø ±â°£ µ¿¾È ½ÃÀå ¼ºÀåÀ» ÃËÁøÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. Àü ¼¼°è ÀÎÅÍ³Ý »ç¿ëÀÚ ¼öÀÇ Áõ°¡´Â ´õ ³ªÀº ¼ºñ½º¸¦ Á¦°øÇÏ°í ´Ù¸¥ °ø±ÞÀÚº¸´Ù ¿ìÀ§¸¦ Á¡ÇÏ¿© »ç¿ëÀÚÀÇ ¿ä±¸¸¦ ÃæÁ·½Ã۱â À§ÇØ ´õ ºü¸£°í °í±Þ ¼ºñ½º °³¹ßÀ» À§ÇÑ ¼ºñ½º Á¦°ø ¾÷üÀÇ ÅõÀÚ·Î À̾îÁö°í ÀÖ½À´Ï´Ù.
5G ±â¼úÀÇ ÃâÇöÀº ¿¹Ãø ±â°£ µ¿¾È ½ÃÀå ¼ºÀåÀ» ´õ¿í ÃËÁøÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ¶ÇÇÑ, 5G´Â ÈξÀ ´õ ³ôÀº Á֯ļö¿¡¼ ÀÛµ¿ÇÒ °ÍÀ¸·Î ¿¹»óµÇ¸ç, »õ·Î¿î ÀÎÅÍÆäÀ̽º ¹× ±¸¼º¿ä¼Ò ±â¼úÀÇ Ã¤ÅÃÀ» °¡´ÉÇÏ°Ô ÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
R&D ÅõÀÚ, Á¦Ç° ¹ßÇ¥, Á¦ÈÞ, ÅõÀÚ È®´ë µîÀÇ ÇüÅ·ΠÁÖ¿ä ½ÃÀå ÁøÀÔ ±â¾÷ÀÇ ÁøÀÔÀº ÇâÈÄ ¸î ³â µ¿¾È ½ÃÀå ¼ºÀå ÀáÀç·ÂÀ» ´õ¿í º¸¿©ÁÝ´Ï´Ù. ¿¹¸¦ µé¾î, 2021³â 11¿ù ¼ÒÀÌÅØÀº ÷´Ü ±â¼ú ±â¾÷ NOVASiC¸¦ ÀμöÇÏ¿© SiC ¿þÀÌÆÛ ±â¼úÀ» °ÈÇß½À´Ï´Ù. ¶ÇÇÑ 2022³â 7¿ù, STMicroelectronics¿Í GlobalFoundries´Â FD-SOI Á¦Á¶¸¦ À§ÇØ ÇÁ¶û½º Å©·Ñ¿¡ 300mm Á¦Á¶ ½Ã¼³À» ¼³¸³ÇÏ´Â ¾çÇØ°¢¼ ü°áÀ» ¹ßÇ¥Çß½À´Ï´Ù.
Àý¿¬Ã¼ ½Ç¸®ÄÜ ½ÃÀåÀº Á¦Ç°º°·Î RF-SOI, PD-SOI, FD-SOI, Àü·Â¿ë SOI, ±âŸ·Î ºÐ·ùµÇ¸ç, RF-SOI ½ÃÀåÀº ƯÈ÷ mmWave ¹× 5G¿Í °°Àº ±â¼úÀÇ ¿ª·®À» Çâ»ó½Ã۱â À§ÇÑ ¼ÒºñÀÚ ÀüÀÚÁ¦Ç° ºÎ¹®°ú ³×Æ®¿öÅ© ¾ÖÇø®ÄÉÀ̼ÇÀÇ ¼ö¿ä Áõ°¡·Î ÀÎÇØ ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ¼ö¿ä Áõ°¡·Î ÀÎÇØ RF-SOI ½ÃÀåÀº ¿¹Ãø ±â°£ µ¿¾È ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
¸¶ÀÌÅ©·ÎÇÁ·Î¼¼¼ÀÇ Á¦Á¶ ¹× °³¹ßÀ» Áö¿øÇÏ´Â PD-SOI(Partially depleted) ½Ç¸®ÄÜ ¿þÀÌÆÛ´Â ´Ù¾çÇÑ ÀüÀÚ±â±â ¹× ¹ÝµµÃ¼ ¾ÖÇø®ÄÉÀ̼ÇÀÇ »ç¿ë Áõ°¡·Î ÀÎÇØ »ç¿ë·®ÀÌ Áõ°¡Çϰí ÀÖ½À´Ï´Ù.
¶ÇÇÑ, FD-SOI ºÎ¹®Àº ÀüÀÚ »ê¾÷ÀÇ ¹ßÀüÀ» Áö¿øÇÏ´Â FDSOI MOSFET ¹× ¸ÖƼ°ÔÀÌÆ® MOSFET°ú °°Àº ´Ù¾çÇÑ ÃÊÀúÀü·Â ¾ÖÇø®ÄÉÀ̼ÇÀ» ÃæÁ·½Ã۱â À§ÇØ ´Ù¾çÇÑ ÃÖÁ¾»ç¿ëÀÚ »ê¾÷¿¡¼ °í±Þ ¹× °ÈµÈ µð¹ÙÀ̽º¿¡ ´ëÇÑ ¼ö¿ä°¡ ±ÞÁõÇϰí ÀÖÀ¸¸ç ¿¹Ãø ±â°£ µ¿¾È Å« Á¡À¯À²À» Â÷ÁöÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
¾Æ½Ã¾ÆÅÂÆò¾çÀÌ ½ÃÀå¿¡¼ Å« Á¡À¯À²À» Â÷ÁöÇÒ °ÍÀ¸·Î ÃßÁ¤µË´Ï´Ù.
Áö¿ªº°·Î SOI(Silicon-on-Insulator) ½ÃÀåÀº ºÏ¹Ì, ³²¹Ì, À¯·´, Áßµ¿ ¹× ¾ÆÇÁ¸®Ä«, ¾Æ½Ã¾ÆÅÂÆò¾çÀ¸·Î ±¸ºÐµË´Ï´Ù. ¾Æ½Ã¾ÆÅÂÆò¾çÀº ±âº» ÃßÁ¤Ä¡¿¡¼ °¡Àå Å« ºñÁßÀ» Â÷ÁöÇϰí ÀÖÀ¸¸ç, ÀÌ Áö¿ªÀÇ ½º¸¶Æ®Æù ¹× Åë½Å Á¦Á¶¿¡ ´ëÇÑ ÅõÀÚ Áõ°¡·Î ÀÎÇØ ±Þ°ÝÇÑ ¼ºÀåÀÌ ¿¹»óµË´Ï´Ù. µ¿½Ã¿¡ ¹Ì±¹ Á¤ºÎÀÇ ±¹³» Á¦Á¶ Ȱ¼ºÈ¿¡ ´ëÇÑ °ü½ÉÀÌ ³ô¾ÆÁö¸é¼ ¹Ì±¹ ½ÃÀåÀÇ ¼ºÀåÀ» °ßÀÎÇÒ °ÍÀ¸·Î ¿¹»óµÇ¸ç, À¯·´ ½ÃÀåÀº ¿¹Ãø ±â°£ µ¿¾È ¾ÈÁ¤ÀûÀÎ ¼Óµµ·Î ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.
¾Æ½Ã¾ÆÅÂÆò¾çÀÇ RF-SOI ½ÃÀåÀº ÁÖ¿ä ½º¸¶Æ®Æù Á¦Á¶¾÷üµéÀÌ 5G ±â¼úÀ» žÀçÇϱ⠽ÃÀÛÇÏ¸é¼ ±Þ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹»óµÇ¸ç, Toshiba Electronic Device & Storage CorporationÀº 2020³â 2¿ù 5G ¸ð¹ÙÀÏ ±â±â¿ë RF ½ºÀ§Ä¡ ¹× ÀúÀâÀ½ ÁõÆø±â¿¡ ÃÖÀûÈµÈ ÃֽŠRF-SOI 'TaRF11'À» Ãâ½ÃÇß½À´Ï´Ù.
The silicon-on-insulator (SOI) market is evaluated at US$1,353.442 million for the year 2022 and is projected to grow at a CAGR of 19.80% to reach a market size of US$4,595.902 million by the year 2029.
Integrated circuit (IC) performance and efficiency are improved by the novel semiconductor fabrication process known as silicon-on-insulator (SOI) technology. A thin layer of silicon, known as the active layer, is formed on top of an insulating substrate in silicon oxide (SiO2) or sapphire technology. The insulating layer separates the active silicon layer from the substrate electrically in this "sandwich" structure created via fabrication. Compared to conventional bulk silicon substrates, this separation lowers parasitic capacitance and enhances IC speed, power efficiency, and noise immunity.
Additionally, SOI-based ICs' radiation hardness and noise immunity are improved by the isolation offered by the insulating substrate, which qualifies them for use in hostile environments like those found in automobiles and aircraft.
The major factors driving the silicon on insulator market growth include the rising incorporation of 5G technology, majorly in the developing economies of the globe. The growing internet penetration has been a major factor in the budding investments in 5G technology, which is anticipated to further augment the demand for new interface and component technologies, thereby positively impacting the demand for silicon-on-insulators (SOI).
The expanding adoption of SOI wafers across the consumer electronics industry is also projected to be one of the important factors driving the market growth, as the adoption of smart appliances and connected appliances, along with investments in home automation, especially in the developed economies, is further widening the opportunities for the market growth. However, the availability of substitute technology is anticipated to hamper the market's growth in the coming years.
The growing internet penetration coupled with rapid advancements in wireless technology is expected to propel the market growth during the forecast period. The growing number of internet users globally is further leading to budding investments by the service providers for the development of faster and more advanced services to meet the requirements of the users by providing better services and gaining an advantage over other providers.
The emergence of 5G technology is further expected to drive the growth of the market during the projected period. Moreover, 5G is expected to operate on much higher frequencies, which is further anticipated to enable the adoption of new interface and component technologies.
The participation of key market players in the form of R&D investments, product launches, partnerships, and expansion investments further shows the potential for the market to grow in the coming years. For instance, in November 2021, Soitec acquired the advanced technology company, NOVASiC to enhance its SiC wafer technology. Further, in July 2022, STMicroelectronics and GlobalFoundries announced the signing of a memorandum of understanding according to which, the market giants would set up a 300mm manufacturing facility in Crolles, France for the production of FD-SOI.
By product, the silicon in the insulator market is segmented as RF-SOI, PD-SOI, FD-SOI, power SOI, and others. The RF-SOI market is expected to grow during the forecast period due to rising demand from the consumer electronics sector and networking applications to improve the capabilities of technologies such as mmWave and 5G, among others.
The growing usage of silicon wafers in PD-SOI (Partially depleted) to support the fabrication and development of microprocessors, due to the rising usage in different electronics and semiconductor applications.
In addition, the FD-SOI segment is expected to hold a significant share over the forecast period owing to the burgeoning demand for advanced and enhanced devices from various end-user industries for catering to the various ultra-low-power applications such as FDSOI MOSFETS and multi-gate MOSFETS to aid in the development of the electronics industry.
Asia-Pacific is estimated to hold a significant share of the market
By geography, the silicon on insulator market is segmented into North America, South America, Europe, the Middle East and Africa, and Asia Pacific. Asia-Pacific is estimated to hold a significant share in the base year and is anticipated to grow at a rapid pace as a result of rising investment in smartphone and telecommunication manufacturing in the region. Simultaneously, the growing focus by the government of the United States to promote domestic manufacturing is anticipated to drive the market's growth in the country, while the European market is projected to grow at a steady pace during the forecast period.
The RF-SOI market in Asia-Pacific is projected to grow at a rapid rate as major smartphone manufacturers start incorporating 5G technology. Toshiba Electronic Device & Storage Corporation launched "TaRF11" in February 2020, its latest generation of RF-SOI that has been specifically optimized for RF switches and low-noise amplifiers in 5G mobile devices.