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Global Gallium Nitride Device Market - Forecasts from 2025 to 2030

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  • Qorvo, Inc.
  • Northrop Grumman
  • Texas Instruments
  • Sumitomo Electric Industries Ltd.
  • GaN Systems Inc.
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  • Mitsubishi Electric Corporation
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LSH 25.05.09

The global Gallium Nitride Device market is expected to grow at a compound annual growth rate of 4.02% over the forecast period of 2025-2030.

Gallium Nitride, commonly known as GaN, is used in developing semiconductor devices. GaN is a rigorous yet mechanically stable wide bandgap semiconductor with higher breakdown strength and faster switching speed. Its higher thermal conductivity and low resistance make it an ideal semiconductor for electronics and other devices. By creating a GaN epilayer on a silicon surface, silicon manufacturer can reduce their manufacturing cost by removing the need for specialization with the existing manufacturing infrastructure. This layer also enables the production of larger silicon wafers at a lower cost. Furthermore, it has been observed that the power devices based on GaN technology outperform those based on silicon at a noteworthy rate. Hence, GaN is gaining more popularity as a semiconductor due to its better performance.

Market Trends:

  • The global gallium nitride (GaN) industry is expected to experience significant growth during the forecast period, driven by the rising demand for consumer electronics and the increasing adoption of renewable energy solutions. The primary factor fueling this growth is the booming consumer electronics sector and the expanding need for telecommunication services. Higher disposable incomes are also expected to boost the demand for consumer electronics.
  • Additionally, technological advancements have significantly increased the demand for telecommunication services, further propelling market growth. According to a report by Cisco, IP traffic is projected to quadruple, reaching 4.8 Zettabytes per year in 2022, up from 1.5 Zettabytes per year in 2017. To meet this growing demand, the wireless industry is transitioning from 4G to 5G networks, which is expected to drive the demand for GaN during the forecast period.
  • Asia-Pacific is poised for strong growth in the GaN market. Rising disposable incomes and increased technology penetration have boosted the demand for consumer electronics, particularly in this region. Smart devices, in particular, have seen a surge in users. According to bankmycell.com, there were 3.8 billion smartphone users in 2021, representing 48.3% of the global population, while mobile phone users totaled 4.88 billion, or 62.07% of the global population. In total, 5.28 billion people owned mobile devices. The growing adoption of smart devices is expected to drive the gallium nitride industry's expansion at a rapid pace during the forecast period. Technological innovations in the sector are also expected to create new growth opportunities for the GaN market.
  • The Asia-Pacific GaN market is projected to experience lucrative growth. Industrialization, coupled with low labor costs, high production potential, and favorable outsourcing policies, has led to the proliferation of consumer electronics manufacturing companies in the region. Additionally, rising disposable incomes have increased the demand for smart devices and other consumer electronics, further supporting market growth.

Some of the major players covered in this report include Infineon Technologies AG, Broadcom Inc., ON Semiconductor Corporation, Dialog Semiconductor (Renesas Electronics), Wolfspeed, Inc., Qorvo, Inc., Northrop Grumman, Texas Instruments, among others.

Key Benefits of this Report:

  • Insightful Analysis: Gain detailed market insights covering major as well as emerging geographical regions, focusing on customer segments, government policies and socio-economic factors, consumer preferences, industry verticals, and other sub-segments.
  • Competitive Landscape: Understand the strategic maneuvers employed by key players globally to understand possible market penetration with the correct strategy.
  • Market Drivers & Future Trends: Explore the dynamic factors and pivotal market trends and how they will shape future market developments.
  • Actionable Recommendations: Utilize the insights to exercise strategic decisions to uncover new business streams and revenues in a dynamic environment.
  • Caters to a Wide Audience: Beneficial and cost-effective for startups, research institutions, consultants, SMEs, and large enterprises.

What do businesses use our reports for?

Industry and Market Insights, Opportunity Assessment, Product Demand Forecasting, Market Entry Strategy, Geographical Expansion, Capital Investment Decisions, Regulatory Framework & Implications, New Product Development, Competitive Intelligence

Report Coverage:

  • Historical data from 2022 to 2024 & forecast data from 2025 to 2030
  • Growth Opportunities, Challenges, Supply Chain Outlook, Regulatory Framework, and Trend Analysis
  • Competitive Positioning, Strategies, and Market Share Analysis
  • Revenue Growth and Forecast Assessment of segments and regions including countries
  • Company Profiling (Strategies, Products, Financial Information, and Key Developments among others)

Global Gallium Nitride Device Market is analyzed into the following segments:

By Wafer Size

  • 2 inch
  • 4 inch
  • 6 inch
  • More than 6 inch

By Type of Device

  • Power Semiconductor Device
  • RF Semiconductor Device
  • Opto-Semiconductor Device

By Application

  • Radio Frequency
  • Power Electronics
  • Optoelectronics
  • Consumer electronics
  • Telecommunications
  • Others

By Industry

  • Consumer Electronics
  • Telecommunication
  • Automotive
  • Aerospace and Defense
  • Others

By Region

  • Americas
  • US
  • Europe, Middle East, and Africa
  • Germany
  • Netherlands
  • Others
  • Asia Pacific
  • China
  • Japan
  • Taiwan
  • South Korea
  • Others

TABLE OF CONTENTS

1. INTRODUCTION

  • 1.1. Market Overview
  • 1.2. Market Definition
  • 1.3. Scope of the Study
  • 1.4. Market Segmentation
  • 1.5. Currency
  • 1.6. Assumptions
  • 1.7. Base and Forecast Years Timeline
  • 1.8. Key benefits for the stakeholders

2. RESEARCH METHODOLOGY

  • 2.1. Research Design
  • 2.2. Research Process

3. EXECUTIVE SUMMARY

  • 3.1. Key Findings

4. MARKET DYNAMICS

  • 4.1. Market Drivers
  • 4.2. Market Restraints
  • 4.3. Porter's Five Forces Analysis
    • 4.3.1. Bargaining Power of Suppliers
    • 4.3.2. Bargaining Power of Buyers
    • 4.3.3. Threat of New Entrants
    • 4.3.4. Threat of Substitutes
    • 4.3.5. Competitive Rivalry in the Industry
  • 4.4. Industry Value Chain Analysis
  • 4.5. Analyst View

5. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY WAFER SIZE

  • 5.1. Introduction
  • 5.2. 2 inch
  • 5.3. 4 inch
  • 5.4. 6 inch
  • 5.5. More than 6 inch

6. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY TYPE OF DEVICE

  • 6.1. Introduction
  • 6.2. Power Semiconductor Device
  • 6.3. RF Semiconductor Device
  • 6.4. Opto-Semiconductor Device

7. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY APPLICATION

  • 7.1. Introduction
  • 7.2. Radio Frequency
  • 7.3. Power Electronics
  • 7.4. Optoelectronics
  • 7.5. Consumer electronics
  • 7.6. Telecommunications
  • 7.7. Others

8. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY INDUSTRY

  • 8.1. Introduction
  • 8.2. Consumer Electronics
  • 8.3. Telecommunication
  • 8.4. Automotive
  • 8.5. Aerospace and Defense
  • 8.6. Others

9. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY GEOGRAPHY

  • 9.1. Introduction
  • 9.2. Americas
    • 9.2.1. By Wafer Size
    • 9.2.2. By Type of Device
    • 9.2.3. By Appliccation
    • 9.2.4. By Industry
    • 9.2.5. By Country
      • 9.2.5.1. US
  • 9.3. Europe, Middle East & Africa
    • 9.3.1. By Wafer Size
    • 9.3.2. By Type of Device
    • 9.3.3. By Appliccation
    • 9.3.4. By Industry
    • 9.3.5. By Country
      • 9.3.5.1. Germany
      • 9.3.5.2. Netherlands
      • 9.3.5.3. Others
  • 9.4. Asia Pacific
    • 9.4.1. By Wafer Size
    • 9.4.2. By Type of Device
    • 9.4.3. By Appliccation
    • 9.4.4. By Industry
    • 9.4.5. By Country
      • 9.4.5.1. China
      • 9.4.5.2. Japan
      • 9.4.5.3. Taiwan
      • 9.4.5.4. South Korea
      • 9.4.5.5. Others

10. COMPETITIVE ENVIRONMENT AND ANALYSIS

  • 10.1. Major Players and Strategy Analysis
  • 10.2. Market Share Analysis
  • 10.3. Mergers, Acquisitions, Agreements, and Collaborations
  • 10.4. Competitive Dashboard

11. COMPANY PROFILES

  • 11.1. Infineon Technologies AG
  • 11.2. Broadcom Inc.
  • 11.3. ON Semiconductor Corporation
  • 11.4. Dialog Semiconductor (Renesas Electronics)
  • 11.5. Wolfspeed, Inc.
  • 11.6. Qorvo, Inc.
  • 11.7. Northrop Grumman
  • 11.8. Texas Instruments
  • 11.9. Sumitomo Electric Industries Ltd.
  • 11.10. GaN Systems Inc.
  • 11.11. MACOM
  • 11.12. Mitsubishi Electric Corporation
  • 11.13. Epistar

12. APPENDIX

  • 12.1. Currency
  • 12.2. Assumptions
  • 12.3. Base and Forecast Years Timeline
  • 12.4. Key benefits for the stakeholders
  • 12.5. Research Methodology
  • 12.6. Abbreviations
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