SRAM 근접 메모리 캐시 컴퓨팅 시장 : 시장 점유율 분석, 업계 동향 및 통계, 성장 예측(2026-2031년)

According to Mordor Intelligence, the SRAM near-memory cache compute market size was valued at USD 2.34 billion in 2025 and is estimated to grow to USD 8.91 billion by 2031, at a CAGR of 24.70% during the forecast period from 2026 to 2031.

This report is Segmented by Memory Type (Embedded SRAM (eSRAM), Standalone SRAM, Multi-Port SRAM, and More), Processor Integration (CPU Cache Integration, GPU Cache Integration, and More), Application (AI Training, Inference, Edge AI, and More), End User (Cloud and Hyperscale Providers, Enterprise Data Centers, and More), and Geography. The Market Forecasts are Provided in Terms of Value (USD).

Global SRAM Near-Memory Cache Compute Market Trends and Insights

Rising AI Accelerator Demand For On-Chip Cache Proximity

In the SRAM near-memory cache compute market, AI inference is pushing cache closer to the math engine because deployed models spend a large share of runtime waiting on memory access instead of raw compute. Peer-reviewed work showed that memory-access energy in modern neural networks can be heavily consumed by driving data across high-speed interconnects, which makes near-memory cache placement a direct efficiency lever rather than a secondary design choice. That burden falls when SRAM sits beside the compute block and repeated token operations stay on die, which is why local bandwidth now matters as much as peak compute density in many AI accelerators. NVIDIA's Hopper architecture already reflects this logic, with large on-die SRAM caches designed to reduce repeated trips to external memory in AI workloads. Research on SRAM-accelerated LLM inference also showed that near-memory buffering can improve the decode stage, which is the stage most exposed to token-by-token delay in deployed language models. This is keeping the SRAM near-memory cache compute market centered on accelerator programs that can turn local memory proximity into measurable throughput gains.

Growth In High-Performance CPUs, GPUs, And NPUs

Growth in high-performance processors continues to lift the SRAM near-memory cache compute market because each additional compute block needs local cache to avoid stalls and repeated external memory calls. NVIDIA explained that each streaming multiprocessor carries SRAM-based L1 memory, so scaling the architecture raises on-die cache needs along with it. The H100 also uses a 50MB L2 cache in SRAM, which helps keep larger model and dataset fragments closer to the processor during AI execution. Arm's 3nm pseudo-two-port SRAM macro work shows that IP suppliers are also tuning SRAM designs for higher bandwidth within fixed power and area budgets, which supports a wider set of advanced chip programs. This matters because the SRAM near-memory cache compute market is tied not only to data-center GPUs, but also to CPUs, NPUs, and edge processors that need persistent local model execution. As processor counts and core densities keep rising, local SRAM remains one of the few practical ways to preserve predictable response time.

High Design Complexity For Near-Memory Compute Integration

Near-memory compute integration remains difficult because SRAM arrays, logic blocks, physical layout, and package architecture have to be optimized together instead of in separate design stages. In the current SRAM near-memory cache compute market, that means advanced-node XPU programs often face longer validation cycles and higher engineering overhead before they reach acceptable yield and thermal behavior. A 2026 IEEE and JEDEC-linked analysis warned that high-duty SRAM activity from attention kernels can push local thermal stress beyond standard qualification assumptions in dense AI designs. The same analysis linked that stress to a higher risk of bias temperature instability and silent data corruption under sustained operating load. Foundry dependence also raises the barrier because the most advanced logic and dense SRAM nodes remain concentrated in a small number of fabrication ecosystems, including TSMC's leading-edge roadmap. These constraints limit the number of teams that can scale new programs quickly inside the SRAM near-memory cache compute market.

Other drivers and restraints analyzed in the detailed report include:

1. Shift Toward Energy-Efficient Data Movement Reduction
2. Increasing Use Of Embedded SRAM In Advanced SoCs
3. Limited Software Toolchain And Programmability Support

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

Embedded SRAM held 73.84% of the SRAM near-memory cache compute market in 2025, which kept it as the clear anchor across memory type segmentation. Its lead comes from the fact that it is co-fabricated with logic in the same process flow, which removes package overhead and makes it the default option for advanced SoCs that need fast local memory. Marvell's 2nm custom eSRAM shows how this segment is moving beyond basic cache utility, with up to 6Gb of high-speed on-chip memory, 66% lower standby power than standard SRAM at similar density, and 15% die area savings in a 2nm XPU design. That matters because eSRAM is already embedded across mobile NPUs, automotive processors, and data-center accelerators, so each design improvement scales across a very broad installed base. In practice, this gives embedded SRAM a durable position in the SRAM near-memory cache compute market, even as other memory variants improve.

High-density SRAM is projected to expand at 25.49% CAGR through 2031, making it the fastest-growing subsegment within memory type. IEEE research on 5nm digital SRAM in-memory computing macros reported a density of 5.67Mb/mm2, which sets a meaningful benchmark for denser local model storage in future designs. Standalone SRAM remains relevant in L2 and last-level cache structures and in networking silicon, where repeated random access still rewards low-latency local memory. Multi-port SRAM is also becoming more important in processors that need simultaneous read and write access across parallel compute clusters without bottlenecking throughput. Taken together, these subsegments show that the SRAM near-memory cache compute industry is widening from standard cache blocks into more specialized memory forms that match different bandwidth and dataflow needs.

AI accelerator cache integration held 43.17% share of the SRAM near-memory cache compute market size in 2025 and is projected to grow at 25.43% CAGR through 2031. This dual lead matters because dedicated training and inference chips allocate a larger portion of die area to SRAM than most general-purpose processors do. As a result, this segment now sets the pace for SRAM compilers, foundry tuning, and cache hierarchy design across much of the broader SRAM near-memory cache compute market. NVIDIA's Hopper architecture illustrates the point, with a 50MB L2 cache in SRAM that is designed to reduce repeated trips to HBM during AI execution. When accelerator programs expand, they pull a wide range of upstream design choices with them, from cache density to power budgeting.

GPU cache integration remains a major volume contributor because each streaming multiprocessor depends on local SRAM-based L1 memory to maintain efficient data reuse. CPU cache integration provides a steadier volume base, especially in AI server platforms where host processors still manage orchestration, control, and memory coordination. Arm's 3nm pseudo-two-port SRAM macro work shows that the IP ecosystem is still improving bandwidth within strict area and power limits, which supports continued optimization in this segment. Network and edge ASIC integration serves a different use case, with SRAM helping packet buffering, real-time inference, and low-latency control at the system edge. This leaves processor integration balanced between a fast-moving accelerator core and a stable supporting base across GPUs, CPUs, and specialized ASICs.

Complete Report Scope:

• By Memory Type
  • Embedded SRAM (eSRAM)
  • Standalone SRAM
  • Multi-Port SRAM
  • High-Density SRAM
• By Processor Integration
  • CPU Cache Integration
  • GPU Cache Integration
  • AI Accelerator Cache Integration
  • Network And Edge ASIC Integration
• By Application
  • AI Training
  • AI Inference
  • HPC
  • Networking
  • Edge AI
  • Automotive
• By End User
  • Cloud and Hyperscale Providers
  • Enterprise Data Centers
  • Automotive OEMs and Tier-1 Suppliers
  • Industrial Enterprises
  • Telecommunications Equipment Providers
• By Geography
  • North America
    • United States
    • Canada
    • Mexico
  • Europe
    • Germany
    • United Kingdom
    • France
    • Italy
    • Rest of Europe
  • Asia-Pacific
    • China
    • Japan
    • South Korea
    • Taiwan
    • India
    • Rest of Asia-Pacific
  • South America
  • Middle East and Africa

Geography Analysis

North America held 42.77% of the SRAM near-memory cache compute market share in 2025, making it the largest regional base for design and deployment. The region benefits from the concentration of leading chip designers, platform vendors, and hyperscale AI buyers that shape product priorities for the SRAM near-memory cache compute market. This gives North America strong influence over cache architecture, software requirements, and packaging choices, even when wafer fabrication happens elsewhere. Its main constraint is continued reliance on Asian foundries for the most advanced SRAM-heavy nodes, which keeps supply risk tied to offshore manufacturing capacity.

Asia-Pacific is projected to record the fastest 25.58% CAGR through 2031 in the SRAM near-memory cache compute market. The region combines foundry depth in Taiwan, memory manufacturing strength in South Korea, and expanding AI silicon design work across several national ecosystems. TSMC's N2 process entered volume production in Q4 2025 and enabled SRAM density of around 0.019MB/mm2, which supports denser cache integration at advanced nodes . That supply advantage matters because near-memory architectures depend on dense local SRAM without unacceptable die growth. As more advanced-node designs move from concept to volume, Asia-Pacific remains the main production base that turns architectural demand into shippable silicon for the SRAM near-memory cache compute market.

Europe's role in the SRAM near-memory cache compute market is tied most closely to automotive and embedded processing, where memory reliability and local AI response matter. NXP, STMicroelectronics, and Renesas have each brought forward products that combine AI acceleration with on-chip SRAM for vehicle and edge use cases. South America and Middle East, and Africa remain earlier-stage adoption zones, with demand linked more to telecommunications, cloud rollout, and industrial modernization than to indigenous chip design. This creates a regional mix in which North America leads design demand, Asia-Pacific leads manufacturing momentum, and Europe adds automotive specialization, while South America and Middle East, and Africa build gradually.

1. NVIDIA Corporation
2. Intel Corporation
3. Advanced Micro Devices, Inc.
4. Arm Holdings plc
5. Samsung Electronics Co., Ltd.
6. SK hynix Inc.
7. Micron Technology, Inc.
8. Taiwan Semiconductor Manufacturing Company Limited
9. Qualcomm Incorporated
10. Broadcom Inc.
11. Marvell Technology, Inc.
12. Synopsys, Inc.
13. Cadence Design Systems, Inc.
14. IBM Corporation
15. MediaTek Inc.
16. NXP Semiconductors N.V.
17. STMicroelectronics N.V.
18. Renesas Electronics Corporation
19. Bosch Sensortec GmbH
20. Cerebras Systems, Inc.

Additional Benefits:

• The market estimate (ME) sheet in Excel format
• 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

• 1.1 Study Assumptions And Market Definition
• 1.2 Scope Of The Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

• 4.1 Market Overview
• 4.2 Market Drivers
  • 4.2.1 Rising AI Accelerator Demand For On-Chip Cache Proximity
  • 4.2.2 Growth In High-Performance CPUs, GPUs, And NPUs
  • 4.2.3 Shift Toward Energy-Efficient Data Movement Reduction
  • 4.2.4 Increasing Use Of Embedded SRAM In Advanced SoCs
  • 4.2.5 Expansion Of Edge Compute And Real-Time Analytics Workloads
  • 4.2.6 Foundry And IP Ecosystem Readiness For SRAM-Heavy Designs
• 4.3 Market Restraints
  • 4.3.1 High Design Complexity For Near-Memory Compute Integration
  • 4.3.2 Limited Software Toolchain And Programmability Support
  • 4.3.3 SRAM Area Cost And Density Constraints Versus Alternative Memories
  • 4.3.4 Thermal And Power Management Challenges In Dense Compute Dies
• 4.4 Industry Value Chain Analysis
• 4.5 Impact Of Macroeconomic Factors On The Market
• 4.6 Technological Outlook
• 4.7 Regulatory Landscape
• 4.8 Porter's Five Forces Analysis
  • 4.8.1 Bargaining Power Of Suppliers
  • 4.8.2 Bargaining Power Of Buyers
  • 4.8.3 Threat Of New Entrants
  • 4.8.4 Threat Of Substitutes
  • 4.8.5 Intensity of Competitive Rivalry

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)

• 5.1 By Memory Type
  • 5.1.1 Embedded SRAM (eSRAM)
  • 5.1.2 Standalone SRAM
  • 5.1.3 Multi-Port SRAM
  • 5.1.4 High-Density SRAM
• 5.2 By Processor Integration
  • 5.2.1 CPU Cache Integration
  • 5.2.2 GPU Cache Integration
  • 5.2.3 AI Accelerator Cache Integration
  • 5.2.4 Network And Edge ASIC Integration
• 5.3 By Application
  • 5.3.1 AI Training
  • 5.3.2 AI Inference
  • 5.3.3 HPC
  • 5.3.4 Networking
  • 5.3.5 Edge AI
  • 5.3.6 Automotive
• 5.4 By End User
  • 5.4.1 Cloud and Hyperscale Providers
  • 5.4.2 Enterprise Data Centers
  • 5.4.3 Automotive OEMs and Tier-1 Suppliers
  • 5.4.4 Industrial Enterprises
  • 5.4.5 Telecommunications Equipment Providers
• 5.5 By Geography
  • 5.5.1 North America
    • 5.5.1.1 United States
    • 5.5.1.2 Canada
    • 5.5.1.3 Mexico
  • 5.5.2 Europe
    • 5.5.2.1 Germany
    • 5.5.2.2 United Kingdom
    • 5.5.2.3 France
    • 5.5.2.4 Italy
    • 5.5.2.5 Rest of Europe
  • 5.5.3 Asia-Pacific
    • 5.5.3.1 China
    • 5.5.3.2 Japan
    • 5.5.3.3 South Korea
    • 5.5.3.4 Taiwan
    • 5.5.3.5 India
    • 5.5.3.6 Rest of Asia-Pacific
  • 5.5.4 South America
  • 5.5.5 Middle East and Africa

6 COMPETITIVE LANDSCAPE

• 6.1 Market Concentration
• 6.2 Strategic Moves
• 6.3 Vendor Positioning Analysis
• 6.4 Company Profiles (includes Global Level Overview, Market Level Overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share, Products and Services, Recent Developments)
  • 6.4.1 NVIDIA Corporation
  • 6.4.2 Intel Corporation
  • 6.4.3 Advanced Micro Devices, Inc.
  • 6.4.4 Arm Holdings plc
  • 6.4.5 Samsung Electronics Co., Ltd.
  • 6.4.6 SK hynix Inc.
  • 6.4.7 Micron Technology, Inc.
  • 6.4.8 Taiwan Semiconductor Manufacturing Company Limited
  • 6.4.9 Qualcomm Incorporated
  • 6.4.10 Broadcom Inc.
  • 6.4.11 Marvell Technology, Inc.
  • 6.4.12 Synopsys, Inc.
  • 6.4.13 Cadence Design Systems, Inc.
  • 6.4.14 IBM Corporation
  • 6.4.15 MediaTek Inc.
  • 6.4.16 NXP Semiconductors N.V.
  • 6.4.17 STMicroelectronics N.V.
  • 6.4.18 Renesas Electronics Corporation
  • 6.4.19 Bosch Sensortec GmbH
  • 6.4.20 Cerebras Systems, Inc.

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

• 7.1 White-Space And Unmet-Need Assessment