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세계의 NAND 플래시 메모리 시장 : 성장, 동향, 예측(2019-2024년)

Global NAND Flash Memory Market - Growth, Trends, and Forecast (2019 - 2024)

리서치사 Mordor Intelligence LLP
발행일 2019년 03월 상품 코드 704831
페이지 정보 영문 120 Pages
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세계의 NAND 플래시 메모리 시장 : 성장, 동향, 예측(2019-2024년) Global NAND Flash Memory Market - Growth, Trends, and Forecast (2019 - 2024)
발행일 : 2019년 03월 페이지 정보 : 영문 120 Pages

세계의 NAND 플래시 메모리(NAND Flash Memory) 시장을 조사했으며, 시장 개요, 종류·구조·용도·지역별 시장 규모 추이와 예측, 시장 동향, 시장 성장 촉진요인 및 저해요인, 경쟁 구도, 주요 기업 개요 등의 정보를 정리하여 전해드립니다.

목차

제1장 서론

  • 주요 조사 성과
  • 조사의 전제조건
  • 조사 결과

제2장 조사 방법

제3장 주요 요약

제4장 시장 동향

  • 시장 개요
  • 시장 촉진요인
    • 저비용 스토리지 수요 증가
    • 스마트 디바이스 보급률 상승
    • 중요 분야에서 사용되는 고성능 컴퓨터 수요 증가
  • 시장이 해결해야 할 과제
    • 플래시 메모리의 높은 초기비용
  • Five Forces 분석
    • 구매자의 협상력
    • 공급 기업의 협상력
    • 신규 진출기업의 위협
    • 대체품의 위협
    • 경쟁 기업간 경쟁 관계

제5장 NAND 플래시 메모리 시장 : 부문별

  • 종류별
    • SLC
    • MLC
    • TLC
  • 구조별
    • 2D
    • 3D
  • 용도별
    • 스마트폰
    • SSD
    • 메모리 카드
    • 태블릿
    • 기타
  • 지역별
    • 북미
    • 유럽
    • 아시아태평양
    • 라틴아메리카
    • 중동 및 아프리카

제6장 벤더의 시장 점유율

제7장 기업 개요

  • Samsung Electronics Co. Ltd
  • Toshiba
  • Micron Technology Inc.
  • SK Hynix Inc.
  • Intel Corporation
  • Renesas Electronics Corporation
  • SanDisk Corp.
  • Numonyx Inc.
  • Powerchip Technology Corporation
  • Spansion Inc.

제8장 투자 분석

제9장 시장 전망

LSH 18.10.02

이 페이지에 게재되어 있는 내용은 최신판과 약간 차이가 있을 수 있으므로 영문목차를 함께 참조하여 주시기 바랍니다. 기타 자세한 사항은 문의 바랍니다.

Market Overview

The NAND Flash Memory Market is expected to register a CAGR of 9.1%, during the forecast period (2019 - 2024). The current macro trends of AI and machine learning, mobility, and connectivity are favorable to NAND markets and expected to result in memory continuing to increase its share in the semiconductor market.

  • Increasing penetration of smart devices due to smart city trends and factory automation require storage of massive amount of data. Consumer technology industry revenue in the U.S to grow by six per cent in 2018, USD 377 billion in retail revenues, according to Consumer Technology Association.
  • With continuous upgradations in consumer electronics technology the need for smaller size, more reliable and low-cost storage solutions demand is picking up. Newly emerging NVM (Non-Volatile Memory) technologies, offering increased speed and durability compared with NAND, are expected to begin playing a significant role and encroach on the market share of NAND by 2020.

Scope of the Report

3D NAND is the successor to 2D NAND flash memory for storage applications such as smartphones and solid-state storage drives (SSDs). Challenges with 3D stacking remain and the opportunity in scaling concerning the number of layers remain to be seen.

Key Market Trends

Smartphone segment is Expected to Witness Significant Growth

  • Improving the scaling limits year on year, smartphone manufacturers sell smartphones at a premium by upgrading the memory capacity to boost performance.
  • With 5G wireless communication on its way, the use of smartphones would increase multifold, growing the demand for the latest models to raise the bar continuously.
  • Samsung, four years after launching the first Universal Flash Storage solution, the 128-gigabyte (GB) eUFS, it has passed the terabyte threshold in smartphone storage using its in-house most advanced 512-gigabit (Gb) V-NAND flash memory.
  • Flash Memory storage has become an essential component in smartphones, not only for consumers whose demand for storage keeps on increasing with content creation but also for OEMs from Bill of Materials (BoM) cost perspective. The NAND flash demand has been growing exponentially, primarily driven by the growth of the average capacity in smartphones, which is expected to cross 60GB per smartphone in Q4 2018.

Asia-Pacific Hold the Largest Market Share

Asia Pacific is one of the largest markets for NAND flash in the world. The region has a high demand from almost all the end-user applications alike, primarily led by the demand for smartphones in several developing countries in the region, such as China, India, Indonesia etc.

  • There is a high activity from the semiconductor fabrication facilities in countries like China, Korea, and Singapore. Chinese government's initiatives such as Made in China 2025 has drawn substantial capital from memory manufacturers. The country has set goals to reach USD 305 billion in semiconductor output by 2030, and meet at least 80 of domestic demand for semiconductors are expected to draw more investments into the country.
  • Owing to such development in China, several competitors in the region are intensifying their efforts of expansion. For example, as of February 2019, SK Hynix, world's second largest memory-chip maker, announced that it is planning to invest USD 106 billion to establish four new semiconductor fabrication plants in Seoul, South Korea.

Competitive Landscape

The NAND Flash memory market is dominated by major vendors, such as Intel, Micron Technology, Samsung Electronics, SanDisk, SK Hynix, and Toshiba. As the entry barriers in the market are high, the entry of new players is difficult. The existing vendors in the market are investing heavily in the R&D of new and innovative products.

  • NAND chip-level players, such as Intel, Micron, Samsung, SanDisk/Toshiba, and SK Hynix have successfully increased profitability and captured additional value through forward integration to the NAND system level, with offerings, such as solid-state drives for enterprise data centers and cloud computing and embedded solutions.
  • In December 2018, Samsung released a multi-terabyte 860 QVO SSD built with high-density 4-bit multi-level cell (MLC) NAND flash architecture
  • China's Yangtze Memory Technologies Co. (YMTC) recieved billions of dollars in funding from the Chinese government and introduced its first 3D NAND technology in 2018.

Reasons to Purchase this report:

  • The market estimate (ME) sheet in Excel format
  • Report customization as per the client's requirements
  • 3 months of analyst support

Table of Contents

1 INTRODUCTION

  • 1.1 Study Deliverables
  • 1.2 Study Assumptions
  • 1.3 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET DYNAMICS

  • 4.1 Market Overview
  • 4.2 Introduction to Market Drivers and Restraints
  • 4.3 Market Drivers
    • 4.3.1 Increasing Demand For Low-cost Storage Solutions
    • 4.3.2 Increasing Penetration Of Smart Devices
  • 4.4 Market Restraints
    • 4.4.1 High Initial Cost Of Flash Memory
  • 4.5 Industry Attractiveness - Porter's Five Force Analysis
    • 4.5.1 Threat of New Entrants
    • 4.5.2 Bargaining Power of Buyers/Consumers
    • 4.5.3 Bargaining Power of Suppliers
    • 4.5.4 Threat of Substitute Products
    • 4.5.5 Intensity of Competitive Rivalry

5 MARKET SEGMENTATION

  • 5.1 Type
    • 5.1.1 SLC (One-bit Per Cell)
    • 5.1.2 MLC (Two-bit Per Cell)
    • 5.1.3 TLC (Three-bit Per Cell)
  • 5.2 Structure
    • 5.2.1 2-D Structure
    • 5.2.2 3-D Structure
  • 5.3 Application
    • 5.3.1 Smartphone
    • 5.3.2 SSD
    • 5.3.3 Memory Card
    • 5.3.4 Tablet
    • 5.3.5 Other Applications
  • 5.4 Geography
    • 5.4.1 North America
    • 5.4.2 Europe
    • 5.4.3 Asia Pacific
    • 5.4.4 Latin America
    • 5.4.5 Middle East and Africa

6 COMPETITIVE LANDSCAPE

  • 6.1 Vendor Market Share
  • 6.2 Company Profiles
    • 6.2.1 Samsung Electronics Co. Ltd
    • 6.2.2 Toshiba Corporation
    • 6.2.3 Micron Technology Inc.
    • 6.2.4 SK Hynix Inc.
    • 6.2.5 Intel Corporation
    • 6.2.6 Renesas Electronics Corporation
    • 6.2.7 SanDisk Corp.
    • 6.2.8 Powerchip Technology Corporation
    • 6.2.9 Cypress Semiconductor Corporation

7 MARKET OPPORTUNITIES AND FUTURE TRENDS

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