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Global Next Generation Memory Market 2024-2031

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  • Adesto Technologies Corp.
  • Avalanche Technologies Inc.
  • Crossbar Inc.
  • Cypress Semiconductor Corp.
  • Everspin Technologies Inc.
  • Fujitsu Ltd.
  • Honeywell International Inc.
  • IBM Corp.
  • KIOXIA Holdings Corp.
  • Semiconductor Energy Laboratory Co., Ltd.
  • Sony Corp.
  • Taiwan Semiconductor Manufacturing Company Limited(TSMC)
  • Toshiba Corp.
  • Western Digital Corp.
  • Winbond Electronics Corp.
ksm 24.05.28

Next Generation Memory Market Size, Share & Trends Analysis Report by Type (Volatile and Non-Volatile), and by Application (BFSI, IT & Telecom, Government, Consumer Electronics, and Others) Forecast Period (2024-2031)

Next generation memory market is anticipated to grow at an exponential CAGR of 26.5% during the forecast period (2024-2031). Next-generation memory is a category of computer memory technology that is currently under development. It is a rapidly evolving sector within the semiconductor industry. Next-generation memory is designed to improve on the limitations of traditional memory types like DRAM and NAND flash. The growing development in the field of next generation memory to improve on the limitation of traditional memory is a key factor driving the growth of the global market. The lack of stability under extreme environmental conditions may restrain the global market.

Market Dynamics

High demand for high-performance & low-power memory devices

The high demand for high-performance and low-power memory devices for the proliferation of data-intensive applications such as AI, ML, and big data analytics is a key factor promoting the development of next generation memory. RRAM, MRAM, FeRAM, and NRAM are some of the emerging non-volatile memories that offer higher scalability, density, speed, and endurance compared to traditional memory. This memory takes between 1-10 ns for their output to meet the specified requirements after a command request.

Growing investment in technology

The growing investment by both public & private firms in next generation memory development is a key factor driving the growth of the global market. For instance, in May 2023, Micron Technology announced it to invest up to $3.6 billion in Japan for the next few years with support from the Japanese government for the development of next-generation memory chips. With this investment, the company plans to install extreme ultraviolet (EUV) lithography in Japan to make the next generation of dynamic random-access memory (DRAM), called the 1-gamma chips, at its Hiroshima plant.

Market Segmentation

Our in-depth analysis of the global next generation memory market includes the following segments by type and application:

  • Based on type, the market is sub-segmented into volatile and non-volatile
  • Volatile memory is further segmented into Hybrid Memory Cube (HMC) and High-bandwidth Memory (HBM)
  • Non-Volatile memory is further segmented into Magneto-Resistive Random-Access Memory (MRAM), Ferroelectric RAM (FRAM), Resistive Random-Access Memory (ReRAM), 3D Xpoint Nano RAM, and Other Non-volatile Technologies (Phase change RAM, STT-RAM, and SRAM)
  • Based on application, the market is sub-segmented into BFSI, IT & telecom, government, consumer electronics, and other (retail)

Non-Volatile Memory Holds Major Share in the Global Market

Based on the type, the global next generation memory market is sub-segmented into volatile memory and non-volatile memory. Non-volatile memory held major share based on type. The high share of this market segment can be attributed to the rising demand for faster, more effective, and cost effective memory solutions. The increasing demand for medical wearables has further driving the growth of this market segment.

Regional Outlook

The global next generation memory market is further segmented based on geography including North America (the US, and Canada), Europe (UK, Italy, Spain, Germany, France, and the Rest of Europe), Asia-Pacific (India, China, Japan, South Korea, and Rest of Asia), and the Rest of the World (the Middle East & Africa, and Latin America).

Global Next Generation Memory Market Growth by Region 2024-2031

Source: OMR Analysis

Asia-Pacific Holds Major Market Share

Among all the regions, Asia-Pacific holds a significant share owing to the increasing adoption of semiconductor components across various industries, including automotive, consumer electronics, and IT & telecom, and increasing use of memory-based elements in technologically advanced products, such as smartphones, and wearable devices. In recent decades, East Asia has transformed into a hub for the manufacturing of electronics such as smartphones, televisions, and semiconductors. Multinational supply chains centered in East Asia manufacture hundreds of billions of dollars of semiconductors a year. The Asia-Pacific semiconductor market has shown major growth in the last two decades, as electronic equipment production shifted to the region. Additionally, the expansion of 5G networks and increasing data center expansion have increased the need for next generation memory-intensive chips boosting the market growth.

Market Players Outlook

Note: Major Players Sorted in No Particular Order.

The major companies serving the global next generation memory market include Intel Corp., Micron Technology, Inc., Samsung Electronics Co. Ltd., SK Hynix Inc., and Fujitsu Ltd. among others. The top 5 players hold a major share in the global market. The market players are increasingly focusing on business expansion and product development by applying strategies such as collaborations, mergers, and acquisitions to stay competitive in the market. For instance, in March 2024, ADTechnology signed a Memorandum of Understanding (MOU) with CoSignOn/CoreLink, a startup specializing in memory driving and operational foundational technologies. The core focus of this collaboration is to secure HBM IP solutions, a next-generation memory technology. Through the Next-Generation IP eco-system, vendors within this network anticipate establishing a foundation to garner market attention by providing stable and reliable products and services.

The Report Covers:

  • Market value data analysis of 2023 and forecast to 2031.
  • Annualized market revenues ($ million) for each market segment.
  • Country-wise analysis of major geographical regions.
  • Key companies operating in the global next generation memory market. Based on the availability of data, information related to new product launches, and relevant news is also available in the report.
  • Analysis of business strategies by identifying the key market segments positioned for strong growth in the future.
  • Analysis of market-entry and market expansion strategies.
  • Competitive strategies by identifying 'who-stands-where' in the market.

Table of Contents

1.Report Summary

  • Current Industry Analysis and Growth Potential Outlook
  • 1.1.Research Methods and Tools
  • 1.2.Market Breakdown
    • 1.2.1.By Segments
    • 1.2.2.By Region

2.Market Overview and Insights

  • 2.1.Scope of the Report
  • 2.2.Analyst Insight & Current Market Trends
    • 2.2.1.Key Findings
    • 2.2.2.Recommendations
    • 2.2.3.Conclusion

3.Competitive Landscape

  • 3.1.Key Company Analysis
  • 3.2.Intel Corp.
    • 3.2.1.Overview
    • 3.2.2.Financial Analysis
    • 3.2.3.SWOT Analysis
    • 3.2.4.Recent Developments
  • 3.3.Micron Technology, Inc.
    • 3.3.1.Overview
    • 3.3.2.Financial Analysis
    • 3.3.3.SWOT Analysis
    • 3.3.4.Recent Developments
  • 3.4.Samsung Electronics Co., Ltd.
    • 3.4.1.Overview
    • 3.4.2.Financial Analysis
    • 3.4.3.SWOT Analysis
    • 3.4.4.Recent Developments
  • 3.5.SK Hynix Inc.
    • 3.5.1.Overview
    • 3.5.2.Financial Analysis
    • 3.5.3.SWOT Analysis
    • 3.5.4.Recent Developments
  • 3.6.Key Strategy Analysis

4.Market Segmentation

  • 4.1.Global Next Generation Memory Market by Type
    • 4.1.1.Volatile
      • 4.1.1.1.Hybrid Memory Cube

(HMC)

      • 4.1.1.2.High Bandwidth Memory
    • 4.1.2.Non-Volatile
      • 4.1.2.1.Magneto-Resistive Random-Access Memory (MRAM)
      • 4.1.2.2.Ferroelectric RAM (FRAM)
      • 4.1.2.3.Resistive Random-Access Memory (ReRAM)
      • 4.1.2.4.3D Xpoint Nano RAM
      • 4.1.2.5.Other Non-volatile Technologies (Phase change RAM, STT-RAM, and SRAM)
  • 4.2.Global Next Generation Memory Market by Application
    • 4.2.1.BFSI
    • 4.2.2.IT & Telecom
    • 4.2.3.Government
    • 4.2.4.Consumer Electronics
    • 4.2.5.Other (Retail)

5.Regional Analysis

  • 5.1.North America
    • 5.1.1.United States
    • 5.1.2.Canada
  • 5.2.Europe
    • 5.2.1.UK
    • 5.2.2.Germany
    • 5.2.3.Italy
    • 5.2.4.Spain
    • 5.2.5.France
    • 5.2.6.Rest of Europe
  • 5.3.Asia-Pacific
    • 5.3.1.China
    • 5.3.2.India
    • 5.3.3.Japan
    • 5.3.4.South Korea
    • 5.3.5.Rest of Asia-Pacific
  • 5.4.Rest of the World

6.Company Profiles

  • 6.1.Adesto Technologies Corp.
  • 6.2.Avalanche Technologies Inc.
  • 6.3.Crossbar Inc.
  • 6.4.Cypress Semiconductor Corp.
  • 6.5.Everspin Technologies Inc.
  • 6.6.Fujitsu Ltd.
  • 6.7.Honeywell International Inc.
  • 6.8.IBM Corp.
  • 6.9.KIOXIA Holdings Corp.
  • 6.10.Semiconductor Energy Laboratory Co., Ltd.
  • 6.11.Sony Corp.
  • 6.12.Taiwan Semiconductor Manufacturing Company Limited (TSMC)
  • 6.13.Toshiba Corp.
  • 6.14.Western Digital Corp.
  • 6.15.Winbond Electronics Corp.
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