미국의 NOR 플래시 : 시장 점유율 분석, 업계 동향 및 통계, 성장 예측(2026-2031년)

According to Mordor Intelligence, the united states NOR flash market size was valued at USD 498.21 million in 2025 and is estimated to grow from USD 524.62 million in 2026 to reach USD 679.18 million by 2031, at a CAGR of 5.3% during the forecast period (2026-2031).

This report is Segmented by Type (Serial, and Parallel), Density (2 Megabit and Less NOR, and More), Voltage (3V Class, 1. 8V Class, and More), End-User Application (Consumer Electronics, Communication Equipment, Automotive and More), Process Technology Node (65 Nm, 55 Nm, and More), and Packaging Type (WLCSP/CSP, and More). The Market Forecasts are Provided in Terms of Value (USD) and Volume (Units).

United States NOR Flash Market Trends and Insights

Surge in Demand for High-Reliability NOR in U.S. ADAS and Functional-Safety ECUs

Automakers that are rolling out Level 2+ and Level 3 autonomy now require flash that meets ISO 26262 ASIL-D. Infineon's Semper family attained that certificate, enabling Tier 1s to reduce redundancy layers while still guaranteeing deterministic boot. Zonal architectures consolidate many small ECUs into high-performance controllers, lifting density needs to 128 Mb-512 Mb per zone. Tesla's AI5 platform produced in Texas relies on external serial NOR to isolate safety-critical firmware, and multiyear supply contracts already stretch to the 2029 model year. These factors collectively place serial NOR on the critical path of EV production ramps.

CHIPS and Science Act Incentives Accelerating Domestic NOR Manufacturing

Through July 2025, CHIPS disbursed USD 36.4 billion across 40 projects, three-quarters of which reside in Arizona, New York, and Texas, anchoring memory-capable fabs near automotive and defense clusters. Local subsidies narrow the cost gap with Asian production, and Amkor's Peoria WLCSP line gives automakers an ITAR-compliant packaging option. While wafer starts will not meaningfully add until 2028, customers are already placing take-or-pay orders that secure futures capacity, signaling confidence in a domestically sourced supply chain.

High Fabrication Cost Versus SPI-NAND Beyond 28-Nanometer Nodes

SPI-NAND achieves a cost of approximately USD 0.015 per Mb at a 1 Gb density on 28 nm technology, making it a more economical choice compared to NOR, which remains above USD 0.05 per Mb. This significant cost difference is prompting cost-sensitive OEMs to transition to SPI-NAND, especially in applications where boot latency is not a critical factor. Foundries are increasingly prioritizing high-margin logic production, leaving NOR confined to older manufacturing equipment. This older equipment lacks the scale-economy advantages that NAND benefits from, further widening the cost gap. As a result, NOR technology struggles to compete in terms of cost efficiency, particularly in high-density applications.

Other drivers and restraints analyzed in the detailed report include:

1. Rapid Roll-Out of 5G mmWave Base-Stations Driving NOR Code-Storage Demand
2. Industrial IoT Deployments in Harsh U.S. Environments Needing Instant-Boot Memory
3. Limited Domestic 300-Millimeter Capacity Constraining High-Density NOR Supply

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

Serial NOR Flash accounted for 60.9% of the United States NOR Flash market share in 2025, a lead that is widening as automotive OEMs replace bulky parallel devices with quad- and octal-variant devices to trim board size. The trend strengthens the United States NOR Flash market by allowing vendors to upsell secure-boot features at premium margins. Parallel NOR still services defense rad-hard designs and legacy industrial controllers where 15-year form-fit-function commitments override space constraints. Vendors therefore dual-source both interfaces, but volume growth and roadmap investment clearly favor serial parts, keeping parallel revenue flat even as the overall United States NOR Flash market size rises.

Second-generation serial parts offer execute-in-place at 400 MB/s and AES-256 encryption, enabling zonal ECUs to load Linux images directly without DRAM staging. As RISC-V MCUs proliferate, start-ups pick serial NOR for its broad tool-chain support, reinforcing an ecosystem effect that further marginalizes parallel. Consequently, serial NOR becomes the strategic linchpin for automakers, industrial IoT, and 5G infrastructure, while parallel NOR becomes a legacy-harvest play.

Quad SPI captured 46.2% of revenue in 2025, yet octal and xSPI are growing faster, with a 10.6% CAGR. This growth is driven by the increasing demand for centralized automotive controllers, which require 400 MB/s bandwidth to load redundant firmware images efficiently. The shift is expanding the high-margin segment of the United States NOR Flash market, as designers prioritize speed and deterministic reads over cost per bit. Single- and dual-SPI are gradually being relegated to cost-sensitive consumer segments, while quad-SPI remains the mid-range standard. Octal SPI, on the other hand, is emerging as the premium choice due to its superior performance capabilities.

Octal devices now incorporate advanced features such as differential signaling and ECC, which were previously exclusive to parallel buses. JEDEC's xSPI 2.0 specification has further enhanced throughput, bringing it closer to PCIe Gen2 levels while maintaining the benefits of low-pin-count packages. This development has significantly reduced the performance gap that once justified the use of parallel interfaces. As OEMs prepare to redesign control units for the 2028 model years, the adoption of xSPI is expected to accelerate. This trend positions xSPI as the leading boot standard for high-reliability applications, solidifying its market position.

The 128 Mb tier retained 28.7% share in 2025, but Linux-based infotainment stacks and ADAS sensor fusion are driving the need for larger firmware partitions, pushing demand toward 256 MB-1 GB capacities. This shift toward higher densities is boosting the United States NOR Flash market size, as the increase in average selling prices outweighs the penalties associated with larger die sizes. Meanwhile, lower-density parts, particularly those <=8 Mb, are witnessing a decline as embedded MRAM within microcontrollers eliminates the requirement for external code storage below 64 Mb. This trend highlights the growing preference for higher-density solutions in advanced applications.

To achieve gigabit capacities without relying on new lithography advancements, vendors are stacking two 512 Mb dies within a single BGA or WLCSP package. This approach allows mature 55 nm processes to remain relevant while preserving automotive qualification standards, which are critical for maintaining reliability in automotive applications. Additionally, this strategy serves as a safeguard against the erosion of low-end sockets by embedded alternatives. As a result, the market is experiencing a shift driven by density rather than unit growth, positioning density-driven mix shifts as the primary revenue driver through 2031.

Complete Report Scope:

• By Type (Value, Volume)
  • Serial NOR Flash
  • Parallel NOR Flash
• By Interface (Value)
  • SPI Single / Dual
  • Quad SPI
  • Octal and xSPI
• By Density (Value)
  • 2 Megabit and Less NOR
  • 4 Megabit (More than 2 Mb) NOR
  • 8 Megabit (More than 4 Mb) NOR
  • 16 Megabit (More than 8 Mb) NOR
  • 32 Megabit (More than 16 Mb) NOR
  • 64 Megabit (More than 32 Mb) NOR
  • 128 Megabit (More than 64 Mb) NOR
  • 256 Megabit (More than 128 Mb) NOR
  • Greater than 256 Megabit
• By Voltage (Value)
  • 3 V Class
  • 1.8 V Class
  • Wide-Voltage (1.65 V - 3.6 V)
  • Sub-1.8 V Classes (1.2 V, 2.5 V, 5 V)
• By End-User Application (Value, Volume)
  • Consumer Electronics
  • Communication
  • Automotive
  • Industrial
  • Other End-User Applications
• By Process Technology Node (Value)
  • 90 nm and Older
  • 65 nm
  • 55 nm
  • 45 nm
  • 28 nm and Below
• By Packaging Type (Value)
  • WLCSP / CSP
  • QFN / SOIC
  • BGA / FBGA
  • Other Packaging Types

List of Companies Covered in this Report:

1. Infineon Technologies AG
2. Micron Technology Inc.
3. Winbond Electronics Corporation
4. Macronix International Co. Ltd.
5. GigaDevice Semiconductor Inc.
6. Renesas Electronics Corporation
7. Integrated Silicon Solution Inc.
8. Microchip Technology Inc.
9. Elite Semiconductor Microelectronics Technology Inc.
10. Puya Semiconductor (Shanghai) Co. Ltd.
11. Alliance Memory Inc.
12. STMicroelectronics NV
13. Samsung Semiconductor
14. SkyHigh Memory Limited
15. Etron Technology Inc.
16. AMIC Technology Corp.
17. Cypress Semiconductor Corp.
18. Teledyne e2v Semiconductors
19. Fudan Microelectronics Group Co. Ltd.
20. Silicon Storage Technology Inc.

Additional Benefits:

• The market estimate (ME) sheet in Excel format
• 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

• 1.1 Study Assumptions and Market Definition
• 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

• 4.1 Market Overview
• 4.2 Industry Value-Chain Analysis
• 4.3 Market Drivers
  • 4.3.1 Surge in Demand for High-Reliability NOR in U.S. ADAS and Functional-Safety ECUs
  • 4.3.2 Rapid Roll-Out of 5G mmWave Base-Stations Driving NOR Code-Storage Demand
  • 4.3.3 DoD Aerospace and Defense Modernization Requiring Radiation-Tolerant NOR
  • 4.3.4 Industrial IoT Deployments in Harsh U.S. Environments Needing Instant-Boot Memory
  • 4.3.5 CHIPS and Science Act Incentives Accelerating Domestic NOR Manufacturing
  • 4.3.6 Emerging Open-Source RISC-V MCU Ecosystem Standardizing on External NOR for Secure Boot
• 4.4 Market Restraints
  • 4.4.1 High Fabrication Cost Versus SPI-NAND Beyond 28 nm Nodes
  • 4.4.2 Adoption of Embedded MRAM and RRAM as Alternative Code Storage in MCUs
  • 4.4.3 Limited Domestic 300 mm Capacity Constraining High-Density NOR Supply
  • 4.4.4 Volatility in Critical Process Gas Supply (Neon, Fluorine) Raising Cost Unpredictability
• 4.5 Impact of Macroeconomic Factors on the Market
• 4.6 Regulatory and Technological Outlook
• 4.7 Porter's Five Forces Analysis
  • 4.7.1 Bargaining Power of Suppliers
  • 4.7.2 Bargaining Power of Buyers
  • 4.7.3 Threat of New Entrants
  • 4.7.4 Threat of Substitute Products
  • 4.7.5 Intensity of Competitive Rivalry
• 4.8 Pricing Analysis
• 4.9 Investment Analysis

5 MARKET SIZE AND GROWTH FORECASTS (VALUE, VOLUME)

• 5.1 By Type (Value, Volume)
  • 5.1.1 Serial NOR Flash
  • 5.1.2 Parallel NOR Flash
• 5.2 By Interface (Value)
  • 5.2.1 SPI Single / Dual
  • 5.2.2 Quad SPI
  • 5.2.3 Octal and xSPI
• 5.3 By Density (Value)
  • 5.3.1 2 Megabit and Less NOR
  • 5.3.2 4 Megabit (More than 2 Mb) NOR
  • 5.3.3 8 Megabit (More than 4 Mb) NOR
  • 5.3.4 16 Megabit (More than 8 Mb) NOR
  • 5.3.5 32 Megabit (More than 16 Mb) NOR
  • 5.3.6 64 Megabit (More than 32 Mb) NOR
  • 5.3.7 128 Megabit (More than 64 Mb) NOR
  • 5.3.8 256 Megabit (More than 128 Mb) NOR
  • 5.3.9 Greater than 256 Megabit
• 5.4 By Voltage (Value)
  • 5.4.1 3 V Class
  • 5.4.2 1.8 V Class
  • 5.4.3 Wide-Voltage (1.65 V - 3.6 V)
  • 5.4.4 Sub-1.8 V Classes (1.2 V, 2.5 V, 5 V)
• 5.5 By End-User Application (Value, Volume)
  • 5.5.1 Consumer Electronics
  • 5.5.2 Communication
  • 5.5.3 Automotive
  • 5.5.4 Industrial
  • 5.5.5 Other End-User Applications
• 5.6 By Process Technology Node (Value)
  • 5.6.1 90 nm and Older
  • 5.6.2 65 nm
  • 5.6.3 55 nm
  • 5.6.4 45 nm
  • 5.6.5 28 nm and Below
• 5.7 By Packaging Type (Value)
  • 5.7.1 WLCSP / CSP
  • 5.7.2 QFN / SOIC
  • 5.7.3 BGA / FBGA
  • 5.7.4 Other Packaging Types

6 COMPETITIVE LANDSCAPE

• 6.1 Market Concentration
• 6.2 Strategic Moves
• 6.3 Vendor Positioning Analysis
• 6.4 Company Profiles
  • 6.4.1 Infineon Technologies AG
  • 6.4.2 Micron Technology Inc.
  • 6.4.3 Winbond Electronics Corporation
  • 6.4.4 Macronix International Co. Ltd.
  • 6.4.5 GigaDevice Semiconductor Inc.
  • 6.4.6 Renesas Electronics Corporation
  • 6.4.7 Integrated Silicon Solution Inc.
  • 6.4.8 Microchip Technology Inc.
  • 6.4.9 Elite Semiconductor Microelectronics Technology Inc.
  • 6.4.10 Puya Semiconductor (Shanghai) Co. Ltd.
  • 6.4.11 Alliance Memory Inc.
  • 6.4.12 STMicroelectronics NV
  • 6.4.13 Samsung Semiconductor
  • 6.4.14 SkyHigh Memory Limited
  • 6.4.15 Etron Technology Inc.
  • 6.4.16 AMIC Technology Corp.
  • 6.4.17 Cypress Semiconductor Corp.
  • 6.4.18 Teledyne e2v Semiconductors
  • 6.4.19 Fudan Microelectronics Group Co. Ltd.
  • 6.4.20 Silicon Storage Technology Inc.

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

• 7.1 White-space and Unmet-need Assessment